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121 条记录 (耗时 0.024 秒)

    Solid dielectric capacitor and method of manufacture
    61.
    发明授权
    Solid dielectric capacitor and method of manufacture 失效

    公开(公告)号：US4999738A

    公开(公告)日：1991-03-12

    申请号：US483079

    申请日：1990-02-21

    申请人： Hiroshi Kishi ,  Hirokazu Chazono ,  Minoru Oshio ,  Hiroshi Saito ,  Toshiya Nakamura ,  Hisamitsu Shizuno

    发明人： Hiroshi Kishi ,  Hirokazu Chazono ,  Minoru Oshio ,  Hiroshi Saito ,  Toshiya Nakamura ,  Hisamitsu Shizuno

    IPC分类号： C04B35/46 ,  C04B35/49 ,  H01G4/12

    CPC分类号： C04B35/49 ,  H01G4/1245

    摘要： A monolithic capacitor having a dielectric ceramic body cosintered with at least two base metal electrodes. The ceramic body is composed of a major ingredient expressed by the formula,(1-.alpha.){(Ba.sub.k-x M.sub.x)O.sub.k TiO.sub.2 }+.alpha.CaZrO.sub.3where M is either or both of calcium and strontium, and .alpha., k and y are numerals in specified ranges. To this major ingredient is added a minor proportion of a mixture of boric oxide, silicon dioxide and at least one metal oxide selected from among barium oxide, strontium oxide, calcium oxide, magnesium oxide and zinc oxide. For the fabrication of capacitors the mixture of the above major ingredient and additives in finely divided form are formed into moldings of desired shape and size, each with at least two electrodes buried therein. The moldings and electrodes are cosintered in a reductive or neutral atmosphere at temperatures of less than 1200.degree. C. and then are reheated at a lower temperature in an oxidative atmosphere.

    Low temperature sintered ceramic capacitor with a temperature compensating capability, and method of manufacture
    62.
    发明授权
    Low temperature sintered ceramic capacitor with a temperature compensating capability, and method of manufacture 失效
    具有温度补偿能力的低温烧结陶瓷电容器及其制造方法

    公开(公告)号：US4700268A

    公开(公告)日：1987-10-13

    申请号：US945360

    申请日：1986-12-22

    申请人： Hirokazu Chazono ,  Hiroshi Kishi ,  Shunji Murai ,  Masami Fukui ,  Takeshi Wada

    发明人： Hirokazu Chazono ,  Hiroshi Kishi ,  Shunji Murai ,  Masami Fukui ,  Takeshi Wada

    IPC分类号： H01G4/30 ,  C04B35/47 ,  C04B35/49 ,  H01B3/12 ,  H01G4/12 ,  C04B35/46

    CPC分类号： C04B35/49 ,  C04B35/47 ,  H01G4/1245

    摘要： A temperature compensating capacitor of monolithic or multilayered configuration comprising a dielectric ceramic body and at least two electrodes buried therein. The ceramic body is composed of a major ingredent expressed by the formula, {(Sr.sub.1-x Ca.sub.x)O}.sub.k (Ti.sub.1-y Zr.sub.y)O.sub.2, where x, k and y are numerals in the ranges of 0.005 to 0.995 inclusive, 1.00 to 1.04 inclusive, and 0.005 to 0.100 inclusive, respectively. To this major ingredient is added a minor proportion of a mixture of boric oxide, silicon dioxide, and one or more metal oxides selected from among barium oxide, magnesium oxide, zinc oxide, strontium oxide and calcium oxide. For the fabrication of capacitors the mixture of the above major ingredient and additives in finely divided form are formed into moldings of desired shape and size, each with at least two electrodes buried therein. The moldings and electrodes are cosintered in a reductive or neutral atmosphere and then are reheated at a lower temperature in an oxidative atmosphere. The cosintering temperature can be so low that nickel or like base metal can be employed as the electrode material.

    摘要翻译： 一种单片或多层结构的温度补偿电容器，包括介电陶瓷体和埋在其中的至少两个电极。 陶瓷体由以下公式表示的主要成分{（Sr1-xCax）O} k（Ti1-yZry）O2）组成，其中x，k和y为0.005-0.995（含）范围内的数字，1.00至1.04 分别为0.005〜0.100。 添加少量的氧化硼，二氧化硅和一种或多种选自氧化钡，氧化镁，氧化锌，氧化锶和氧化钙的金属氧化物的混合物。 为了制造电容器，将上述主要成分和细分散形式的添加剂的混合物形成为所需形状和尺寸的模制品，其中至少埋设有两个电极。 模制品和电极在还原或中性气氛中共烧结，然后在较低温度下在氧化气氛中再加热。 整个烧结温度可以低到可以使用镍或类似的贱金属作为电极材料。

    Low temperature sintered ceramic capacitor with high DC breakdown voltage, and method of manufacture
    63.
    发明授权
    Low temperature sintered ceramic capacitor with high DC breakdown voltage, and method of manufacture 失效
    具有高直流击穿电压的低温烧结陶瓷电容器及其制造方法

    公开(公告)号：US4607314A

    公开(公告)日：1986-08-19

    申请号：US805096

    申请日：1985-12-04

    申请人： Takeshi Wada ,  Hiroshi Kishi ,  Shunji Murai ,  Masami Fukui

    发明人： Takeshi Wada ,  Hiroshi Kishi ,  Shunji Murai ,  Masami Fukui

    IPC分类号： C04B35/49 ,  C04B35/46 ,  C04B35/468 ,  H01B3/12 ,  H01G4/12 ,  H01G4/30 ,  H01G1/005 ,  H01G4/06

    CPC分类号： C04B35/4682 ,  H01G4/1245

    摘要： A monolithic ceramic capacitor having a higher DC breakdown voltage per unit thickness of the dielectric ceramic body than heretofore. The major ingredient of the ceramic is expressed as {(Ba.sub.1-x-y Ca.sub.x Sr.sub.y)O}.sub.k (Ti.sub.1-z Zr.sub.z)O.sub.2, where x, y, z and k are numerals in the ranges specified herein. To this major ingredient is added a minor proportion of a mixture of boric oxide, silicon dioxide and at least one metal oxide selected from among BaO, SrO and CaO, in specified ranges of proportions. For the fabrication of capacitors having dielectric bodies of the above composition, the moldings of the mixture of the major ingredient and additives in the specified proportions are sintered to maturity in a reductive or neutral atmosphere and then reheated at a lower temperature in an oxidative atmosphere. The sintering temperature can be so low (1000.degree.-1200.degree. C.) that the moldings can be cosintered with base metal electrodes buried therein.

    摘要翻译： 一种单片陶瓷电容器，其电介质陶瓷体的单位厚度的直流击穿电压高于迄今为止。 陶瓷的主要成分表示为{（Ba1-x-yCaxSry）O} k（Ti1-zZrz）O2，其中x，y，z和k是本文所指定范围内的数字。 在规定的比例范围内，向该主要成分添加少量比例的氧化硼，二氧化硅和至少一种选自BaO，SrO和CaO的金属氧化物的混合物。 为了制造具有上述组成的电介质体的电容器，将主要成分和特定比例的添加剂的混合物的模制品在还原性或中性气氛中烧结成熟，然后在较低温度下在氧化气氛中再加热。 烧结温度可以如此低（1000°-1200℃），模制品可以与埋在其中的贱金属电极共烧结。

    Vitreous silica crucible
    64.
    发明授权
    Vitreous silica crucible 有权

    公开(公告)号：US09797063B2

    公开(公告)日：2017-10-24

    申请号：US13307253

    申请日：2011-11-30

    申请人： Toshiaki Sudo ,  Hiroshi Kishi ,  Eriko Suzuki

    发明人： Toshiaki Sudo ,  Hiroshi Kishi ,  Eriko Suzuki

    IPC分类号： C30B15/10 ,  C03B19/09

    CPC分类号： C30B15/10 ,  C03B19/095 ,  Y10T117/1032

    摘要： The present invention provides a vitreous silica crucible which can suppress buckling and sidewall lowering of the crucible without fear of mixing of impurities into silicon melt. According to the present invention, provided is a vitreous silica crucible for pulling a silicon single crystal, wherein a ratio I2/I1 is 0.67 to 1.17, where I1 and I2 are area intensities of the peaks at 492 cm−1 and 606 cm−1, respectively, in Raman spectrum of vitreous silica of the region having a thickness of 2 mm from an outer surface to an inner surface of a wall of the crucible.

    Vitreous silica crucible provided with mineralizer on its inner surface and method of manufacturing silicon ingot using same
    65.
    发明授权
    Vitreous silica crucible provided with mineralizer on its inner surface and method of manufacturing silicon ingot using same 有权
    在其内表面提供矿化剂的玻璃状硅石坩埚及使用其制造硅锭的方法

    公开(公告)号：US09109300B2

    公开(公告)日：2015-08-18

    申请号：US13179280

    申请日：2011-07-08

    申请人： Toshiaki Sudo ,  Hiroshi Kishi

    发明人： Toshiaki Sudo ,  Hiroshi Kishi

    IPC分类号： C30B15/10

    CPC分类号： C30B15/10 ,  Y10T117/1032

    摘要： The present invention provides a vitreous silica crucible which can suppress buckling and sidewall lowering of the crucible in multi-pulling. According to the present invention, provided is a vitreous silica crucible for pulling a silicon single crystal, comprising a mineralizer on an inner surface of the crucible, wherein the mineralizer contains at least one atoms selected from the group consisting of Ca, Sr, Ba, Ra, Ti, Zr, Cr, Mo, Fe, Co, Ni, Cu, and Ag, and the concentration of the mineralizer on the inner surface is 1.0×105 to 1.0×1017 atoms/cm2.

    摘要翻译： 本发明提供一种可以抑制多拉的坩埚的翘曲和侧壁降低的石英玻璃坩埚。 根据本发明，提供了一种用于拉动硅单晶的玻璃状石英坩埚，其包括在坩埚的内表面上的矿化剂，其中矿化剂含有选自Ca，Sr，Ba， Ra，Ti，Zr，Cr，Mo，Fe，Co，Ni，Cu和Ag，矿化剂在内表面的浓度为1.0×10 5〜1.0×10 17原子/ cm 2。

    Vitreous silica crucible
    66.
    发明授权
    Vitreous silica crucible 有权
    石英玻璃坩埚

    公开(公告)号：US08936684B2

    公开(公告)日：2015-01-20

    申请号：US13308344

    申请日：2011-11-30

    申请人： Toshiaki Sudo ,  Hiroshi Kishi ,  Ken Kitahara

    发明人： Toshiaki Sudo ,  Hiroshi Kishi ,  Ken Kitahara

    IPC分类号： C30B15/10 ,  C03B19/09

    CPC分类号： C30B15/10 ,  C03B19/095 ,  Y10T117/10 ,  Y10T117/1024 ,  Y10T117/1032

    摘要： The present invention provides a vitreous silica crucible which can suppress buckling and sidewall lowering of the crucible and the generation of cracks. According to the present invention, a vitreous silica crucible is provided for pulling a silicon single crystal having a wall, the wall including a non-doped inner surface layer made of natural vitreous silica or synthetic vitreous silica, a mineralizing element-maldistributed vitreous silica layer containing dispersed island regions each containing a mineralizing element, and wherein the vitreous silica of the island regions and the vitreous silica of a surrounding region of the island regions is a combination of mineralizing element-doped natural vitreous silica and non-doped synthetic vitreous silica, or a combination of mineralizing element-doped synthetic vitreous silica and non-doped natural vitreous silica, and the inner surface layer is made of vitreous silica of a different kind from that of the island region.

    摘要翻译： 本发明提供一种可以抑制坩埚的翘曲和侧壁降低以及产生裂纹的石英玻璃坩埚。 根据本发明，提供一种玻璃状石英坩埚，用于拉拔具有壁的硅单晶，所述壁包括由天然氧化硅玻璃或合成玻璃态二氧化硅制成的非掺杂内表面层，矿化元素分布不均的玻璃状石英层 含有各自含有矿化元素的分散的岛状区域，岛状区域的石英二氧化硅和岛状区域的周围区域的玻璃态二氧化硅是矿化元素掺杂天然玻璃质石英和非掺杂合成玻璃态二氧化硅的组合， 或矿化元素掺杂的合成玻璃体二氧化硅和非掺杂天然玻璃体二氧化硅的组合，并且内表面层由与岛状区域不同种类的玻璃态二氧化硅制成。

    Method for producing quartz glass crucible
    70.
    发明授权
    Method for producing quartz glass crucible 有权
    生产石英玻璃坩埚的方法

    公开(公告)号：US08286447B2

    公开(公告)日：2012-10-16

    申请号：US12169838

    申请日：2008-07-09

    申请人： Hiroshi Kishi ,  Minoru Kanda

    发明人： Hiroshi Kishi ,  Minoru Kanda

    IPC分类号： C03B19/01 ,  C03B19/06

    CPC分类号： C03B19/095 ,  C30B15/10 ,  C30B35/002

    摘要： A method of producing a quartz glass crucible by arc melting a quartz powder molded product loaded on the inner side of a mold while performing vacuum suction, includes initiating the melting of quartz powder from the rim edge of a quartz powder molded product, subsequently lowering the arc electrode or raising the mold to heat and melt the sections on the downside of the rim edge. The method is preferably carried out such that the inner surface of the crucible is sealed within a time corresponding to 10% of the total arc time starting from the initiation of arc melting, and the seal thickness is 3 mm or less. The quartz glass crucible thus produced is useful for the pulling up of silicon single crystals and has a uniform glass layer with fewer internal bubbles.

    摘要翻译： 通过电弧熔融装载在模具内侧的石英粉末成形体同时进行真空抽吸来制造石英玻璃坩埚的方法包括从石英粉末成型品的边缘开始熔融石英粉末，随后将 电弧电极或提升模具以加热和熔化边缘边缘的下侧的部分。 该方法优选进行，使得坩埚的内表面在从电弧熔化开始起的总电弧时间的10％的时间内密封，并且密封厚度为3mm以下。 由此制造的石英玻璃坩埚可用于提升硅单晶，并且具有均匀的具有较少内部气泡的玻璃层。