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    Vitreous silica crucible
    2.
    发明授权
    Vitreous silica crucible 有权
    石英玻璃坩埚

    公开(公告)号：US09416463B2

    公开(公告)日：2016-08-16

    申请号：US13148463

    申请日：2010-12-13

    申请人： Toshiaki Sudo ,  Hiroshi Kishi

    发明人： Toshiaki Sudo ,  Hiroshi Kishi

    IPC分类号： C30B35/00 ,  C30B15/10 ,  C03B19/09

    CPC分类号： C30B15/10 ,  C03B19/095 ,  C30B35/002 ,  Y02P40/57 ,  Y10T117/1032

    摘要： Provided is a vitreous silica crucible having a reference point, which is capable of accurately detecting the location of a defect in the vitreous silica crucible used for pulling silicon single crystal, determining a defect generating site of silicon single crystal, and investigating the cause of the defect. The reference point used for specifying the position relationship with respect to a particular part is formed in at least one site of an end portion, an inner wall and an outer wall of the crucible.

    摘要翻译： 本发明提供一种具有参考点的氧化硅玻璃坩埚，其能够精确地检测用于拉拔单晶硅的玻璃状石英坩埚中的缺陷的位置，确定单晶硅的缺陷产生位置，并调查其原因 缺陷。 用于指定相对于特定部件的位置关系的参考点形成在坩埚的端部，内壁和外壁的至少一个位置中。

    Vitreous silica crucible
    4.
    发明授权
    Vitreous silica crucible 有权
    石英玻璃坩埚

    公开(公告)号：US09115445B2

    公开(公告)日：2015-08-25

    申请号：US13148457

    申请日：2010-12-13

    申请人： Toshiaki Sudo ,  Hiroshi Kishi ,  Makiko Kodama

    发明人： Toshiaki Sudo ,  Hiroshi Kishi ,  Makiko Kodama

    IPC分类号： C30B35/00 ,  C03C19/00 ,  C03C23/00 ,  C30B15/10

    CPC分类号： C30B35/002 ,  C03C19/00 ,  C03C23/0025 ,  C30B15/10 ,  Y10T117/1032

    摘要： Provided is a vitreous silica crucible which has a special region for suppressing vibration of melt surface during pulling of a silicon single crystal and at the same time, a marking capable of accurately monitoring a changed position of the melt surface when passing through the special region. The special region for preventing sloshing of silicon melt is provided on an inner wall of a straight body portion, and the marking is provided at least at an upper end and a lower end of the special region.

    摘要翻译： 本发明提供一种玻璃状石英玻璃坩埚，其特征在于，在单晶硅拉拔期间具有抑制熔融表面的振动的特殊区域，同时具有能够精确地监测经过特殊区域时的熔融面的变化位置的标记。 用于防止硅熔体晃动的特殊区域设置在直体部分的内壁上，并且标记至少设置在特殊区域的上端和下端。

    Apparatus and method for manufacturing vitreous silica crucible
    5.
    发明授权
    Apparatus and method for manufacturing vitreous silica crucible 有权
    玻璃石坩埚制造装置及方法

    公开(公告)号：US08739573B2

    公开(公告)日：2014-06-03

    申请号：US13389392

    申请日：2010-08-09

    申请人： Toshiaki Sudo ,  Eriko Suzuki ,  Hiroshi Kishi ,  Takeshi Fujita

    发明人： Toshiaki Sudo ,  Eriko Suzuki ,  Hiroshi Kishi ,  Takeshi Fujita

    IPC分类号： C25B11/12 ,  C03B19/09 ,  C25B11/04 ,  C04B35/52

    CPC分类号： C25B11/12 ,  C03B19/09 ,  C03B19/095 ,  C04B35/52 ,  C25B11/0405 ,  Y02P40/57

    摘要： There are provided an apparatus and a method for manufacturing a vitreous silica crucible which can prevent the deterioration of the inner surface property in the manufacturing process of a vitreous silica crucible. The apparatus includes a mold defining an outer shape of a vitreous silica crucible, and an arc discharge unit having electrodes and a power-supply unit, wherein each of the electrodes includes a tip end directed to the mold, the other end opposite to the tip end, and a bent portion provided between the tip end and the other end.

    摘要翻译： 提供了一种可以防止在石英玻璃坩埚的制造过程中内表面特性劣化的石英玻璃坩埚的制造装置和方法。 该装置包括限定二氧化硅玻璃坩埚的外形的模具和具有电极和电源单元的电弧放电单元，其中每个电极包括指向模具的尖端，与尖端相对的另一端 端部和设置在前端和另一端之间的弯曲部分。

    VITREOUS SILICA CRUCIBLE FOR PULLING SILICON SINGLE CRYSTAL AND METHOD OF MANUFACTURING THE SAME
    6.
    发明申请
    VITREOUS SILICA CRUCIBLE FOR PULLING SILICON SINGLE CRYSTAL AND METHOD OF MANUFACTURING THE SAME 有权
    用于拉丝硅单晶的耐火二氧化硅巧克力及其制造方法

    公开(公告)号：US20120160159A1

    公开(公告)日：2012-06-28

    申请号：US13394284

    申请日：2010-08-10

    申请人： Toshiaki Sudo ,  Makiko Kodama ,  Minoru Kanda ,  Hiroshi Kishi

    发明人： Toshiaki Sudo ,  Makiko Kodama ,  Minoru Kanda ,  Hiroshi Kishi

    IPC分类号： C30B15/10 ,  C03B20/00

    CPC分类号： C03B19/095 ,  C30B15/10 ,  C30B29/06 ,  C30B29/18 ,  C30B35/002 ,  Y02P40/57 ,  Y10T117/1032

    摘要： The present invention provides a vitreous silica crucible which can suppress the sidewall lowering of the crucible under high temperature during pulling a silicon single crystal, and a method of manufacturing such a vitreous silica crucible. The vitreous silica crucible 10 includes an opaque vitreous silica layer 11 provided on the outer surface side of the crucible and containing numerous bubbles, and a transparent vitreous silica layer 12 provided on the inner surface side. The opaque vitreous silica layer 11 includes a first opaque vitreous silica portion 11a provided on the crucible upper portion, and a second opaque vitreous silica portion 11b provided on the crucible lower portion. The specific gravity of the second opaque vitreous silica portion 11b is 1.7 to 2.1, and the specific gravity of the first opaque vitreous silica portion 11a is 1.4 to 1.8, and smaller than that of the second opaque vitreous silica portion. The particle size distribution of the material silica powder for the first opaque vitreous silica portion 11a is wider than that of the second opaque vitreous silica portion 11b, and the material silica powder for the first opaque vitreous silica portion 11a includes more fine powder than that for the second opaque vitreous silica portion 11b.

    摘要翻译： 本发明提供一种可以在拉拔硅单晶时抑制坩埚在高温下的侧壁降低的石英玻璃坩埚，以及制造这种石英玻璃坩埚的方法。 玻璃状石英玻璃坩埚10包括设置在坩埚的外表面侧并且含有大量气泡的不透明玻璃状石英层11和设置在内表面侧的透明氧化硅玻璃层12。 不透明玻璃状石英层11包括设置在坩埚上部的第一不透明玻璃状石英部分11a和设置在坩埚下部的第二不透明玻璃状石英部分11b。 第二不透玻璃状二氧化硅部11b的比重为1.7〜2.1，第一不透明玻璃状石英部11a的比重为1.4〜1.8，小于第二不透明玻璃状二氧化硅部的比重。 用于第一不透明玻璃状石英部分11a的材料二氧化硅粉末的粒度分布比第二不透明玻璃状二氧化硅部分11b的粒度分布宽，并且用于第一不透明玻璃状石英部分11a的材料二氧化硅粉末包含比 第二不透明玻璃状石英部分11b。

    APPARATUS FOR MANUFACTURING VITREOUS SILICA CRUCIBLE
    7.
    发明申请
    APPARATUS FOR MANUFACTURING VITREOUS SILICA CRUCIBLE 审中-公开
    用于制造维生素二氧化硅可溶性的装置

    公开(公告)号：US20120141622A1

    公开(公告)日：2012-06-07

    申请号：US13308308

    申请日：2011-11-30

    申请人： Toshiaki Sudo ,  Hiroshi Kishi ,  Takeshi Fujita ,  Minoru Kanda

    发明人： Toshiaki Sudo ,  Hiroshi Kishi ,  Takeshi Fujita ,  Minoru Kanda

    IPC分类号： B29C35/02

    CPC分类号： C03B19/095

    摘要： Provided is an apparatus for manufacturing a vitreous silica crucible which has a structure which can reduce gaps between a partition wall and electrodes inserted into through-holes formed in the partition wall while enabling electrodes to move to adjust a heating temperature of arc discharge. A plate-shaped partition wall 15 is placed above the rotating mold 10. Electrodes 13 for heating and fusing are inserted into through-holes 16 penetrating in a thickness direction, and are directed toward the rotating mold 10. A rocking unit 40 is provided on an upper side of the partition wall 15 and rocks the electrodes 13 around virtual rocking axes P, and the virtual rocking axes P pass through the through-holes 16.

    摘要翻译： 本发明提供一种制造石英玻璃坩埚的装置，其具有能够减少分隔壁与插入形成在隔壁中的通孔的电极之间的间隙的结构，同时使电极移动以调节电弧放电的加热温度。 板状分隔壁15被放置在旋转模具10的上方。用于加热和熔合的电极13被插入穿透厚度方向的通孔16中，并被引导到旋转模具10上。摆动单元40设置在 分隔壁15的上侧并围绕虚拟摇摆轴线P围绕电极13，并且虚拟摇摆轴线P穿过通孔16。

    VITREOUS SILICA CRUCIBLE
    8.
    发明申请
    VITREOUS SILICA CRUCIBLE 有权
    紫外线可溶性

    公开(公告)号：US20120125257A1

    公开(公告)日：2012-05-24

    申请号：US13148463

    申请日：2010-12-13

    申请人： Toshiaki Sudo ,  Hiroshi Kishi

    发明人： Toshiaki Sudo ,  Hiroshi Kishi

    IPC分类号： C30B15/10

    CPC分类号： C30B15/10 ,  C03B19/095 ,  C30B35/002 ,  Y02P40/57 ,  Y10T117/1032

    摘要： Provided is a vitreous silica crucible having a reference point, which is capable of accurately detecting the location of a defect in the vitreous silica crucible used for pulling silicon single crystal, determining a defect generating site of silicon single crystal, and investigating the cause of the defect. The reference point used for specifying the position relationship with respect to a particular part is formed in at least one site of an end portion, an inner wall and an outer wall of the crucible.

    摘要翻译： 本发明提供一种具有参考点的氧化硅玻璃坩埚，其能够精确地检测用于拉拔单晶硅的玻璃状石英坩埚中的缺陷的位置，确定单晶硅的缺陷产生位置，并调查其原因 缺陷。 用于指定相对于特定部件的位置关系的参考点形成在坩埚的端部，内壁和外壁的至少一个位置中。

    Method and apparatus for manufacturing vitreous silica crucible
    10.
    发明授权
    Method and apparatus for manufacturing vitreous silica crucible 有权
    石英玻璃坩埚的制造方法和装置

    公开(公告)号：US08769988B2

    公开(公告)日：2014-07-08

    申请号：US13308277

    申请日：2011-11-30

    申请人： Toshiaki Sudo ,  Hiroshi Kishi ,  Kouta Hasebe

    发明人： Toshiaki Sudo ,  Hiroshi Kishi ,  Kouta Hasebe

    IPC分类号： C03B19/09 ,  C03B29/02

    CPC分类号： C03B19/095 ,  C03B29/02 ,  Y02P40/57

    摘要： Provided is a method for manufacturing a vitreous silica crucible and a manufacturing apparatus for the same, which can reduce the amount of bubbles and impurities of a crucible inner surface and enhance a crystallization yield of silicon single crystal. A method for manufacturing a vitreous silica crucible of the invention includes a silica powder supplying process of supplying silica powder in a rotating mold to form a silica powder layer; an arc fusing process of fusing the silica powder layer by arc discharge generated by carbon electrodes; and a fire polishing process of throwing an arc flame toward a target surface of the silica powder layer for surface removal, wherein, in the fire polishing process, the distances from the tips of the carbon electrodes to the target surface is set to be equal.

    摘要翻译： 提供一种制造石英玻璃坩埚及其制造装置的方法，其可以减少坩埚内表面的气泡和杂质的量，并提高单晶硅的结晶产率。 本发明的石英玻璃坩埚的制造方法包括在旋转模具中供给二氧化硅粉末以形成二氧化硅粉末层的二氧化硅粉末供给工序; 通过由碳电极产生的电弧放电使二氧化硅粉末层熔融的电弧熔合工艺; 以及向二氧化硅粉末层的靶表面投射弧形火焰以进行表面去除的火抛光处理，其中，在火焰研磨处理中，将从碳电极的前端到目标表面的距离设定为相等。