公开(公告)号：US20250160018A1

公开(公告)日：2025-05-15

申请号：US18917389

申请日：2024-10-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Younggeun ROH ,  Kyungbae Park ,  Sungyoung Yun ,  Younhee Lim ,  Hyochul Kim

IPC: H01L27/146 ,  G02B5/20 ,  H04N25/13 ,  H10K39/32

Abstract: An image sensor includes a sensor substrate including a plurality of photosensitive cells configured to sense light, a color filter layer on the sensor substrate, the color filter layer including a plurality of red color filters and a plurality of clear filters, the plurality of red color filters and the plurality of clear filters being alternately disposed, and a band stop filter facing the color filter layer and configured to have an absorption spectrum having an absorption peak wavelength of about 520 nanometers to about 620 nanometers.

公开(公告)号：US20250160010A1

公开(公告)日：2025-05-15

申请号：US18919602

申请日：2024-10-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changyong Um

IPC: H01L27/146

Abstract: An image sensor pixel includes a semiconductor substrate including a first surface and a second surface, a photoelectric conversion region between the first surface and the second surface, a floating diffusion region between the first surface and the second surface, and a vertical transfer gate including: a first vertical region and a second vertical region that each include a side surface portion and a lower surface portion, the side surface portion of each of the first vertical region and the second vertical region has a first inclination from the lower surface portion to a first height of the vertical transfer gate relative to the lower surface portion and a second inclination from the first height to a second height of the vertical transfer gate relative to the lower surface portion, and the first height is less than the second height.

公开(公告)号：US20250160008A1

公开(公告)日：2025-05-15

申请号：US18818187

申请日：2024-08-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngzoon YOON ,  Chanwook Baik ,  Kyungsang Cho

IPC: H01L27/146 ,  G01J1/44 ,  G01J5/10

Abstract: A germanium-based short wavelength infrared sensor, a method of manufacturing the same, and an electronic apparatus including the germanium-based short wavelength infrared sensor are provided. The short wavelength infrared sensor according to an example embodiment includes a light absorption layer provided on the substrate layer and having a higher absorption rate for a short wavelength infrared light than an absorption rate for a visible light; a light absorption enhancement layer provided on the light absorption layer to enhance a light absorption rate of the light absorption layer, the light absorption enhancement layer including a plurality of nanostructures; and an upper insulating layer covering the plurality of nanostructures and having a refractive index greater than a refractive index of each of the plurality of nanostructures, wherein the light absorption layer includes germanium (Ge).

公开(公告)号：US20250159979A1

公开(公告)日：2025-05-15

申请号：US18606001

申请日：2024-03-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Panjae PARK ,  Jintae KIM ,  Hyojong SHIN

IPC: H01L27/092 ,  H01L21/822 ,  H01L21/8238 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775

Abstract: Provided is a semiconductor device which includes: a 1st channel structure; a 1st source/drain region and a 2nd source/drain region connected through the 1st channel structure in a 1st direction; a 1st gate structure on the 1st channel structure; a 1st contact structure on the 1st source/drain region and connecting the 1st source/drain region to a voltage source; and a 2nd contact structure on the 2nd source/drain region and connecting the 2nd source/drain region to another circuit element other than a voltage source, wherein a 1st contact area between the 1st contact structure and the 1st source/drain region is greater than a 2nd contact area between the 2nd contact structure and the 2nd source/drain region.

公开(公告)号：US20250159970A1

公开(公告)日：2025-05-15

申请号：US19022063

申请日：2025-01-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Juyoun KIM

IPC: H10D84/03 ,  H01L21/28 ,  H10D64/01 ,  H10D64/66 ,  H10D64/68 ,  H10D84/01 ,  H10D84/83 ,  H10D84/85 ,  H10D86/00 ,  H10D86/01

Abstract: In a semiconductor device, a first active area, a second active area, and a third active area are formed on a substrate. A first gate electrode is formed on the first active area, a second gate electrode is formed on the second active area, and a third gate electrode is formed on the third active area. The first gate electrode has a first P-work-function metal layer, a first capping layer, a first N-work-function metal layer, a first barrier metal layer, and a first conductive layer. The second gate electrode has a second capping layer, a second N-work-function metal layer, a second barrier metal layer, and a second conductive layer. The third gate electrode has a second P-work-function metal layer, a third capping layer, a third N-work-function metal layer, and a third barrier metal layer. The third gate electrode does not have the first and second conductive layers.

公开(公告)号：US20250159898A1

公开(公告)日：2025-05-15

申请号：US18804202

申请日：2024-08-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung Jae BAIK ,  Tae Hun KIM ,  Jaeduk LEE ,  Jaehoon JANG ,  Jeehoon HAN

IPC: H10B53/20 ,  H10B43/10 ,  H10B43/27 ,  H10B43/35 ,  H10B51/10 ,  H10B51/20 ,  H10B53/10 ,  H10B63/00

Abstract: A semiconductor memory device may include a substrate, a stacked structure including semiconductor patterns stacked in a vertical direction with respect to an upper surface of the substrate, bit lines in contact with first sides of the semiconductor patterns and extending in a first direction parallel to the upper surface of the substrate, common source lines in contact with second sides of the semiconductor patterns and extending in the first direction, word lines penetrating the stacked structure and arranged two-dimensionally, and data storage patterns between the word lines and the stacked structure.

公开(公告)号：US20250159885A1

公开(公告)日：2025-05-15

申请号：US18743326

申请日：2024-06-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： JUNGYEOM KIM ,  HYUNMIN KIM ,  JUSEONG MIN ,  DONGSIK OH ,  KANGOH YUN ,  TAEKKYU YOON ,  WONHO CHANG ,  SEUNGWOOK CHOI ,  JEEHOON HAN

IPC: H10B43/27 ,  H01L25/065 ,  H10B41/27 ,  H10B41/35 ,  H10B41/40 ,  H10B43/35 ,  H10B43/40 ,  H10B80/00

Abstract: A semiconductor device includes a first gate dielectric film on a first channel top surface of a substrate, wherein the first channel top surface is in a first region of the substrate, a first gate electrode on the first gate dielectric film, first offset insulating spacers respectively on opposing sidewalls of each of the first gate dielectric film and the first gate electrode, first main insulating spacers respectively on the opposing sidewalls of the first gate electrode, wherein the first offset insulating spacers are between the first main insulating spacers, and a pair of first source/drain regions in the substrate on opposing sides of the first gate electrode, wherein a top surface of each of the pair of first source/drain regions includes at least two first-voltage substrate step portions having respective surfaces that are lower than the first channel top surface of the substrate in a vertical direction.

公开(公告)号：US20250159867A1

公开(公告)日：2025-05-15

申请号：US18662164

申请日：2024-05-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Donghoon Kwon ,  Jonghyuk Park

IPC: H10B12/00 ,  H01L29/66

Abstract: A semiconductor device includes an active pattern, a gate structure that extends in a first direction on the active pattern, a bit line electrically connected to the active pattern and extending in a second direction, a gate contact electrically connected to the gate structure, a dummy line between the gate contact and the bit line, and a dummy dielectric layer at least partially surrounded by the dummy line, where the dummy line includes: a first dummy line part between the dummy dielectric layer and the bit line, a second dummy line part spaced apart from the first dummy line part, and a plurality of connection parts that electrically connect the first and second dummy line parts to each other, and where the dummy dielectric layer is between the first dummy line part and the second dummy line part and is between the plurality of connection parts.

公开(公告)号：US20250159759A1

公开(公告)日：2025-05-15

申请号：US19022445

申请日：2025-01-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangwook WOO ,  Chungho SHIN ,  Kyungmi JANG ,  Sujin HWANG

IPC: H04W76/45 ,  H04L65/4061 ,  H04W4/10 ,  H04W24/10

Abstract: An electronic device is provided. The electronic device includes a communication circuitry, memory storing one or more computer programs, and one or more processors operatively connected to the communication circuitry and the memory, wherein the one or more computer programs include computer-executable instructions that, when executed by the one or more processors indivudally or collectively, cause the electronic device to establish at least one multimedia broadcast and multicast service (MBMS) subchannel with a mission critical push to talk (MCPTT) server, and, while the at least one MBMS subchannel has been established, sends a message related to switching to a unicast method, to the MCPTT server, if the reception delay time of a control message related to the MBMS subchannel received through a general purpose MBMS subchannel (GPMS) satisfies a specified first switching condition.

公开(公告)号：US20250159721A1

公开(公告)日：2025-05-15

申请号：US18930940

申请日：2024-10-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Rubayet Shafin ,  Boon Loong Ng

IPC: H04W74/04

Abstract: A non-access point multi-link device (non-AP MLD) in a wireless network, the non-AP MLD comprising a memory and a processor configured to: establish a plurality of links, including a first link between a first STA and a first AP and a second link between a second STA and a second AP; transmit, to the first AP on the first link, a request frame to request setup of one or more target wake time (TWT) schedules, wherein the request frame includes link identifier information that indicates the first link and the second link; receive, from the first AP on the first link, a response frame that accepts the request to setup the one or more TWT schedules, wherein the response frame includes the link identifier information that indicates the first link and the second link; and transmit, to the first AP, one or more frames based on a first TWT schedule.