公开(公告)号：US20250159898A1

公开(公告)日：2025-05-15

申请号：US18804202

申请日：2024-08-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung Jae BAIK ,  Tae Hun KIM ,  Jaeduk LEE ,  Jaehoon JANG ,  Jeehoon HAN

IPC: H10B53/20 ,  H10B43/10 ,  H10B43/27 ,  H10B43/35 ,  H10B51/10 ,  H10B51/20 ,  H10B53/10 ,  H10B63/00

Abstract: A semiconductor memory device may include a substrate, a stacked structure including semiconductor patterns stacked in a vertical direction with respect to an upper surface of the substrate, bit lines in contact with first sides of the semiconductor patterns and extending in a first direction parallel to the upper surface of the substrate, common source lines in contact with second sides of the semiconductor patterns and extending in the first direction, word lines penetrating the stacked structure and arranged two-dimensionally, and data storage patterns between the word lines and the stacked structure.

公开(公告)号：US20250078929A1

公开(公告)日：2025-03-06

申请号：US18679809

申请日：2024-05-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kibong MOON ,  Suck-Soo KIM ,  Tae Hun KIM ,  Hyoje BANG ,  Seung Jae BAIK ,  Sung-Bok LEE ,  Jaeduk LEE ,  Junhee LIM

IPC: G11C16/04 ,  G11C5/06 ,  H01L25/065 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B41/41 ,  H10B43/10 ,  H10B43/27 ,  H10B43/35 ,  H10B43/40 ,  H10B80/00

Abstract: A semiconductor device may include a substrate, a plurality of cell strings perpendicular to an upper surface of the substrate, and a bit line connected to at least six of the cell strings. Each of the cell strings may include a plurality of memory cells connected in series to each other in a direction perpendicular to the upper surface of the substrate, first to fourth ground selection transistors connected in series to each other between the plurality of memory cells and the substrate, and a string selection transistor between the plurality of memory cells and the bit line. A first one of the first to fourth selection ground selection transistors may have a first threshold voltage distribution, and a second one of the first to fourth ground selection transistors may have a second threshold voltage distribution. The second threshold voltage distribution may be different from the first threshold voltage distribution.