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154 条记录 (耗时 0.03 秒)

    GAS FLOW DIFFUSER
    62.
    发明申请
    GAS FLOW DIFFUSER 失效
    气体流动扩散器

    公开(公告)号：US20080230518A1

    公开(公告)日：2008-09-25

    申请号：US11689031

    申请日：2007-03-21

    申请人： Paul Brillhart ,  Daniel J. Hoffman ,  James D. Carducci ,  Xiaoping Zhou ,  Matthew L. Miller

    发明人： Paul Brillhart ,  Daniel J. Hoffman ,  James D. Carducci ,  Xiaoping Zhou ,  Matthew L. Miller

    IPC分类号： H01L21/306 ,  C23F1/00 ,  F16L41/00

    CPC分类号： C23C16/45565 ,  C23C16/45502 ,  H01J37/3244 ,  H01J37/32449 ,  H01L21/67069 ,  Y10T137/85938

    摘要： A method and apparatus for providing flow into a processing chamber are provided. In one embodiment, a vacuum processing chamber is provided that includes a chamber body having an interior volume, a substrate support disposed in the interior volume and a gas distribution assembly having an asymmetrical distribution of gas injection ports. In another embodiment, a method for vacuum processing a substrate is provided that includes disposing a substrate on a substrate support within in a processing chamber, flowing process gas into laterally into a space defined above a gas distribution plate positioned in the processing chamber over the substrate, and processing the substrate in the presence of the processing gas.

    摘要翻译： 提供了一种用于提供流入处理室的方法和装置。 在一个实施例中，提供真空处理室，其包括具有内部容积的室主体，设置在内部容积中的基板支撑件和具有气体注入端口的不对称分布的气体分配组件。 在另一个实施例中，提供了一种用于真空处理基板的方法，其包括将基板设置在处理室内的基板支撑件上，使处理气体横向流入位于位于处理室中的位于基板上的气体分配板上方的空间 在处理气体的存在下处理基板。

    MATCHING NETWORK CHARACTERIZATION USING VARIABLE IMPEDANCE ANALYSIS
    63.
    发明申请
    MATCHING NETWORK CHARACTERIZATION USING VARIABLE IMPEDANCE ANALYSIS 失效
    使用可变阻抗分析匹配网络特征

    公开(公告)号：US20080087381A1

    公开(公告)日：2008-04-17

    申请号：US11536197

    申请日：2006-09-28

    申请人： STEVEN C. SHANNON ,  Daniel J. Hoffman ,  Steven Lane ,  Walter R. Merry ,  Jivko Dinev

    发明人： STEVEN C. SHANNON ,  Daniel J. Hoffman ,  Steven Lane ,  Walter R. Merry ,  Jivko Dinev

    IPC分类号： C23F1/00

    CPC分类号： H03H7/38 ,  H03H11/28

    摘要： Embodiments of a method of calculating the equivalent series resistance of a matching network using variable impedance analysis and matching networks analyzed using the same are provided herein. In one embodiment, a method of calculating the equivalent series resistance of a matching network includes the steps of connecting the matching network to a load; measuring an output of the matching network over a range of load impedances; and calculating the equivalent series resistance of the matching network based upon a relationship between the measured output and the load resistance. The load may be a surrogate load or may be a plasma formed in a process chamber.

    摘要翻译： 本文提供了使用可变阻抗分析和使用其分析的匹配网络来计算匹配网络的等效串联电阻的方法的实施例。 在一个实施例中，计算匹配网络的等效串联电阻的方法包括将匹配网络连接到负载的步骤; 在一定范围的负载阻抗上测量匹配网络的输出; 并根据测量输出与负载电阻之间的关系计算匹配网络的等效串联电阻。 负载可以是替代负载，也可以是在处理室中形成的等离子体。

    Plasma density, energy and etch rate measurements at bias power input and real time feedback control of plasma source and bias power
    64.
    发明授权
    Plasma density, energy and etch rate measurements at bias power input and real time feedback control of plasma source and bias power 失效
    偏置功率输入下的等离子体密度，能量和蚀刻速率测量以及等离子体源和偏置功率的实时反馈控制

    公开(公告)号：US07247218B2

    公开(公告)日：2007-07-24

    申请号：US10440364

    申请日：2003-05-16

    申请人： Daniel J. Hoffman

    发明人： Daniel J. Hoffman

    IPC分类号： C23F1/00 ,  H01L21/306

    CPC分类号： H01J37/32174 ,  H01J37/32935

    摘要： A plasma reactor process measurement instrument includes an input phase processor receiving wafer bias voltage, current and power and computing an input impedance, an input current and an input voltage to the transmission line; a transmission line processor for computing a junction admittance of a junction between the transmission line and the conductive grid from the input impedance, input current and input voltage and from parameters of the transmission line; a grid-to-ground transformation unit for providing shunt electrical quantities of a shunt capacitance between the grid and a ground plane; a grid-to-wafer transformation unit for providing load electrical quantities of a load capacitance between the grid and the wafer; and, a combined transformation processor for computing the at least one of the etch rate, plasma ion density and wafer voltage from the junction admittance, the shunt electrical quantities, the load electrical quantities and a frequency of the RF power generator.

    摘要翻译： 等离子体反应器过程测量仪器包括输入相位处理器，接收晶片偏置电压，电流和功率，并计算输入阻抗，输入电流和输入电压到输电线路; 传输线处理器，用于根据输入阻抗，输入电流和输入电压以及传输线路的参数计算传输线和导电栅格之间的接点的接合导纳; 网格到地面变换单元，用于在网格和接地平面之间提供并联电容的并联电量; 网格到晶片转换单元，用于提供栅格和晶片之间的负载电容的负载电量; 以及用于从所述接合导纳，所述并联电量，所述负载电量和所述RF发电机的频率计算所述蚀刻速率，等离子体离子密度和晶片电压中的至少一个的组合变换处理器。

    Capacitively coupled plasma reactor with uniform radial distribution of plasma
    66.
    发明授权
    Capacitively coupled plasma reactor with uniform radial distribution of plasma 有权
    电容耦合等离子体反应器具有均匀的等离子体径向分布

    公开(公告)号：US06900596B2

    公开(公告)日：2005-05-31

    申请号：US10235988

    申请日：2002-09-04

    申请人： Jang Gyoo Yang ,  Daniel J. Hoffman ,  James D. Carducci ,  Douglas A. Buchberger, Jr. ,  Melissa Hagen ,  Matthew L. Miller ,  Kang-Lie Chiang ,  Gerardo A. Delgadino

    发明人： Robert B. Hagen

    IPC分类号： H01J37/32 ,  H01J7/24

    CPC分类号： H01J37/32082 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32623 ,  H01J37/3266

    摘要： A plasma reactor for processing a semiconductor wafer includes a side wall and an overhead ceiling defining a chamber, a workpiece support cathode within the chamber having a working surface facing the ceiling for supporting a semiconductor workpiece, process gas inlets for introducing a process gas into the chamber and an RF bias power generator having a bias power frequency. There is a bias power feed point at the working surface and an RF conductor is connected between the RF bias power generator and the bias power feed point at the working surface. A dielectric sleeve surrounds a portion of the RF conductor, the sleeve having an axial length along the RF conductor, a dielectric constant and an axial location along the RF conductor, the length, dielectric constant and location of the sleeve being such that the sleeve provides a reactance that enhances plasma ion density uniformity over the working surface. In accordance with a further aspect, the reactor can include an annular RF coupling ring having an inner diameter corresponding generally to a periphery of the workpiece, the RF coupling ring extending a sufficient portion of a distance between the working surface and the overhead electrode to enhance plasma ion density near a periphery of the workpiece.

    摘要翻译： 用于处理半导体晶片的等离子体反应器包括限定腔室的侧壁和顶棚顶板，腔室内的工件支撑阴极具有面向天花板的工作表面，用于支撑半导体工件，用于将工艺气体引入到工作气体入口 室和具有偏置功率频率的RF偏置功率发生器。 在工作表面有一个偏置的馈电点，RF导体连接在RF偏置发电机和工作表面的偏置功率馈电点之间。 介质套管围绕RF导体的一部分，套筒具有沿着RF导体的轴向长度，介电常数和沿着RF导体的轴向位置，套筒的长度，介电常数和位置使得套筒提供 一种提高工作表面等离子体离子密度均匀性的电抗。 根据另一方面，反应器可以包括具有大致对应于工件周边的内径的环形RF耦合环，RF耦合环在工作表面和顶置电极之间延伸足够的距离部分以增强 等离子体离子密度在工件周边附近。

    Impedance matched, high-power, rf antenna for ion cyclotron resonance heating of a plasma
    70.
    发明授权
    Impedance matched, high-power, rf antenna for ion cyclotron resonance heating of a plasma 失效
    阻抗匹配，大功率，射频天线用于等离子体的离子回旋共振加热

    公开(公告)号：US4755345A

    公开(公告)日：1988-07-05

    申请号：US891833

    申请日：1986-08-01

    申请人： Frederick W. Baity, Jr. ,  Daniel J. Hoffman ,  Thomas L. Owens

    发明人： Frederick W. Baity, Jr. ,  Daniel J. Hoffman ,  Thomas L. Owens

    IPC分类号： H01Q7/00 ,  H05H1/18 ,  G21B1/00

    CPC分类号： H05H1/18 ,  H01Q7/005

    摘要： A resonant double loop radio frequency (rf) antenna for radiating high-power rf energy into a magnetically confined plasma. An inductive element in the form of a large current strap, forming the radiating element, is connected between two variable capacitors to form a resonant circuit. A real input impedance results from tapping into the resonant circuit along the inductive element, generally near the midpoint thereof. The impedance can be matched to the source impedance by adjusting the separate capacitors for a given tap arrangement or by keeping the two capacitances fixed and adjustng the tap position. This results in a substantial reduction in the voltage and current in the transmission system to the antenna compared to unmatched antennas. Because the complete circuit loop consisting of the two capacitors and the inductive element is resonant, current flows in the same direction along the entire length of the radiating element and is approximately equal in each branch of the circuit. Unidirectional current flow permits excitation of low order poloidal modes which penetrate more deeply into the plasma.

    摘要翻译： 用于将大功率射频能量辐射到磁限制等离子体中的共振双环射频（RF）天线。 形成辐射元件的大电流带形式的电感元件连接在两个可变电容器之间以形成谐振电路。 真正的输入阻抗是通过沿着电感元件的谐振电路进入，通常在其中点附近。 阻抗可以通过调整给定抽头布置的单独电容器或通过保持两个电容固定并调整分接头位置来匹配源阻抗。 与未匹配的天线相比，这导致传输系统对天线的电压和电流的显着降低。 由于由两个电容器和电感元件组成的完整的电路回路是谐振的，所以电流沿着辐射元件的整个长度在相同的方向上流动，并且在电路的每个分支中大致相等。 单向电流允许激发更深入等离子体的低阶极向模式。