公开(公告)号：US06838635B2

公开(公告)日：2005-01-04

申请号：US10288890

申请日：2002-11-05

申请人： Daniel J. Hoffman ,  Gerald Zheyao Yin

发明人： Daniel J. Hoffman ,  Gerald Zheyao Yin

IPC分类号： H05H1/46 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065 ,  B23K9/02

CPC分类号： H01J37/32082 ,  H01J37/32183

摘要： In accordance with one aspect of the invention, a plasma reactor has a capacitive electrode driven by an RF power source, and the electrode capacitance is matched at the desired plasma density and RF source frequency to the negative capacitance of the plasma, to provide an electrode plasma resonance supportive of a broad process window within which the plasma may be sustained.

公开(公告)号：US06528751B1

公开(公告)日：2003-03-04

申请号：US09527342

申请日：2000-03-17

申请人： Daniel J. Hoffman ,  Gerald Zheyao Yin

发明人： Daniel J. Hoffman ,  Gerald Zheyao Yin

IPC分类号： B23K1000

CPC分类号： H01J37/32082 ,  H01J37/32183

摘要： In accordance with one aspect of the invention, a plasma reactor has a capacitive electrode driven by an RF power source, and the electrode capacitance is matched at the desired plasma density and RF source frequency to the negative capacitance of the plasma, to provide an electrode plasma resonance supportive of a broad process window within which the plasma may be sustained.

公开(公告)号：US07030335B2

公开(公告)日：2006-04-18

申请号：US10028922

申请日：2001-12-19

申请人： Daniel J. Hoffman ,  Gerald Zheyao Yin ,  Yan Ye ,  Dan Katz ,  Douglas A. Buchberger, Jr. ,  Xiaoye Zhao ,  Kang-Lie Chiang ,  Robert B. Hagen ,  Matthew L. Miller

发明人： Daniel J. Hoffman ,  Gerald Zheyao Yin ,  Yan Ye ,  Dan Katz ,  Douglas A. Buchberger, Jr. ,  Xiaoye Zhao ,  Kang-Lie Chiang ,  Robert B. Hagen ,  Matthew L. Miller

IPC分类号： B23K10/00

CPC分类号： H01J37/32082 ,  H01J37/32183

摘要： A plasma reactor for processing a semiconductor workpiece, includes a reactor chamber having a chamber wall and containing a workpiece support for holding the semiconductor workpiece, an overhead electrode overlying said workpiece support, the electrode comprising a portion of said chamber wall, an RF power generator for supplying power at a frequency of said generator to said overhead electrode and capable of maintaining a plasma within said chamber at a desired plasma ion density level. The overhead electrode has a capacitance such that said overhead electrode and the plasma formed in said chamber at said desired plasma ion density resonate together at an electrode-plasma resonant frequency, said frequency of said generator being at least near said electrode-plasma resonant frequency. The reactor further includes an insulating layer formed on a surface of said overhead electrode facing said workpiece support, a capacitive insulating layer between said RF power generator and said overhead electrode, and a metal foam layer overlying and contacting a surface of said overhead electrode that faces away from said workpiece support.

公开(公告)号：US06518195B1

公开(公告)日：2003-02-11

申请号：US09504312

申请日：2000-02-15

申请人： Kenneth S. Collins ,  Chan-Lon Yang ,  Jerry Yuen-Kui Wong ,  Jeffrey Marks ,  Peter R. Keswick ,  David W. Groechel ,  Craig A. Roderick ,  John R. Trow ,  Tetsuya Ishikawa ,  Jay D. Pinson, II ,  Lawrence Chang-Lai Lei ,  Masato M. Toshima ,  Gerald Zheyao Yin

发明人： Kenneth S. Collins ,  Chan-Lon Yang ,  Jerry Yuen-Kui Wong ,  Jeffrey Marks ,  Peter R. Keswick ,  David W. Groechel ,  Craig A. Roderick ,  John R. Trow ,  Tetsuya Ishikawa ,  Jay D. Pinson, II ,  Lawrence Chang-Lai Lei ,  Masato M. Toshima ,  Gerald Zheyao Yin

IPC分类号： H01L213065

CPC分类号： H01J37/32871 ,  C23C16/507 ,  C23C16/517 ,  H01F2029/143 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32458 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01L21/31116 ,  H01L21/6831

摘要： A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the 10 wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields.

摘要翻译： 圆顶等离子体反应室使用由RF能量（LF，MF或VHF）驱动的天线，其被感应耦合在反应器穹顶内。 天线在室内产生高密度，低能量等离子体，用于蚀刻金属，电介质和半导体材料。 施加到10晶片支撑阴极的辅助RF偏置能量控制阴极护套电压并且独立于密度来控制离子能量。 公开了各种磁和电压处理增强技术，以及蚀刻工艺沉积工艺和组合蚀刻/沉积处理。 所公开的发明提供敏感设备的处理而不损坏和不加载，从而提高产量。

公开(公告)号：US6136211A

公开(公告)日：2000-10-24

申请号：US969122

申请日：1997-11-12

申请人： Xue-Yu Qian ,  Zhi-Wen Sun ,  Weinan Jiang ,  Arthur Y. Chen ,  Gerald Zheyao Yin ,  Ming-Hsun Yang ,  Ming-Hsun Kuo ,  David S. L. Mui ,  Jeffrey Chinn ,  Shaoher X. Pan ,  Xikun Wang

发明人： Xue-Yu Qian ,  Zhi-Wen Sun ,  Weinan Jiang ,  Arthur Y. Chen ,  Gerald Zheyao Yin ,  Ming-Hsun Yang ,  Ming-Hsun Kuo ,  David S. L. Mui ,  Jeffrey Chinn ,  Shaoher X. Pan ,  Xikun Wang

IPC分类号： H01L21/302 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/3213 ,  B08B9/00

CPC分类号： H01L21/02071 ,  Y10S438/905

摘要： A process for etching a substrate 25 in an etching chamber 30, and simultaneously cleaning a thin, non-homogeneous, etch residue deposited on the surfaces of the walls 45 and components of the etching chamber 30. In the etching step, process gas comprising etchant gas is used to etch a substrate 25 in the etching chamber 30 thereby depositing etch residue inside the chamber 30. Cleaning gas is added to the process gas for a sufficient time and in a volumetric flow ratio that is sufficiently high, to react with and remove substantially all the etch residue deposited by the process gas. The present method advantageously cleans the etch residue in the chamber 30, during the etching process, and without use of separate cleaning, conditioning, and seasoning process steps.

摘要翻译： 用于在蚀刻室30中蚀刻基板25并同时清洗沉积在壁45的表面上的薄的，非均匀的蚀刻残留物和蚀刻室30的部件的方法。在蚀刻步骤中，包括蚀刻剂的工艺气体 使用气体来蚀刻蚀刻室30中的衬底25，从而在腔室30内沉积蚀刻残留物。将清洁气体加入到工艺气体足够长的时间内，并以足够高的体积流量比与反应和去除 基本上所有由工艺气体沉积的蚀刻残余物。 本方法有利地在蚀刻过程期间清洁室30中的蚀刻残留物，并且不使用单独的清洁，调理和调味处理步骤。

公开(公告)号：US6020686A

公开(公告)日：2000-02-01

申请号：US908533

申请日：1997-08-07

申请人： Yan Ye ,  Hiroji Hanawa ,  Diana Xiaobing Ma ,  Gerald Zheyao Yin

发明人： Yan Ye ,  Hiroji Hanawa ,  Diana Xiaobing Ma ,  Gerald Zheyao Yin

IPC分类号： H05H1/46 ,  C23C14/24 ,  H01J37/32 ,  H01L21/203 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H05B37/02

CPC分类号： H01J37/32091 ,  H01J37/32082 ,  H01J37/321

摘要： The invention is embodied in a plasma reactor for processing a semiconductor wafer, the reactor having a pair of parallel capacitive electrodes at the ceiling and base of the processing chamber, respectively, each of the capacitive electrodes capacitively coupling RF power into the chamber in accordance with a certain RF phase relationship between the pair of electrodes during processing of the semiconductor wafer for ease of plasma ignition and precise control of plasma ion energy and process reproducibility, and an inductive coil wound around a portion of the chamber and inductively coupling RF power into the chamber for independent control of plasma ion density. Preferably, in order to minimize the number of RF sources while providing independent power control, the invention includes power splitting to separately provide power from a common source or sources to the pair of electrodes and to the coil.

摘要翻译： 本发明体现在用于处理半导体晶片的等离子体反应器中，反应器分别在处理室的天花板和底部具有一对平行的电容电极，每个电容电极根据电容电容将RF功率电容耦合到室中 在半导体晶片的处理期间该对电极之间的某些RF相位关系易于等离子体点火并且精确控制等离子体离子能量和工艺再现性，以及感应线圈，其缠绕在腔室的一部分上并将RF功率感应耦合到 用于独立控制等离子体离子密度。 优选地，为了在提供独立的功率控制的同时最小化RF源的数量，本发明包括功率分配以从共同的源或源分别向一对电极和线圈供电。

公开(公告)号：US5746875A

公开(公告)日：1998-05-05

申请号：US551881

申请日：1995-10-16

申请人： Dan Maydan ,  Steve S. Y. Mak ,  Donald Olgado ,  Gerald Zheyao Yin ,  Timothy D. Driscoll ,  James S. Papanu ,  Avi Tepman

发明人： Dan Maydan ,  Steve S. Y. Mak ,  Donald Olgado ,  Gerald Zheyao Yin ,  Timothy D. Driscoll ,  James S. Papanu ,  Avi Tepman

IPC分类号： H05H1/46 ,  C23C16/44 ,  C23C16/455 ,  C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H05H1/42 ,  H05H1/00

CPC分类号： C23C16/45574 ,  C23C16/45576 ,  C23C16/45587 ,  H01J37/3244 ,  H01J37/32449

摘要： The invention is embodied in a gas injection apparatus for injecting gases into a plasma reactor vacuum chamber having a chamber housing, a pedestal holding a workpiece to be processed, a device for applying RF energy into the chamber, the gas injection apparatus having a gas supply containing an etchant species in a gas, an opening in the chamber housing, a gas distribution apparatus disposed within the opening in the chamber housing which has at least one slotted aperture facing the interior of the chamber and a device for controlling the flow rate of gas from the one or more slotted apertures, and a gas feed line from the supply to the gas distribution apparatus. In a preferred embodiment, the gas distribution apparatus includes a center member surrounded by at least one annular member with a gap therebetween comprising the slotted aperture. Preferably, each of the members of the gas distribution apparatus comprises a material at least nearly impervious to attack from the etchant species. In one example, each of the members of the gas distribution apparatus comprises one of a ceramic, fused quartz, polymeric or anodized aluminum material and the gas feed line comprises stainless steel. Preferably, each of the members has its surface polished prior to assembly of the gas distribution apparatus.

摘要翻译： 本发明体现在一种用于将气体注入等离子体反应器真空室中的气体注入装置，其具有腔室壳体，保持要加工的工件的基座，用于将RF能量施加到腔室中的装置，该气体注入装置具有气体供应 在气体中含有蚀刻剂物质，在腔室中的开口，设置在腔室中的开口内的气体分配装置，其具有面向腔室内部的至少一个开口孔，以及用于控制气体流速的装置 从一个或多个开槽孔，以及从供给到气体分配装置的气体供给管线。 在优选实施例中，气体分配装置包括由至少一个环形构件包围的中心构件，其间具有间隙，包括开槽孔。 优选地，气体分配装置的每个构件包括至少几乎不受蚀刻剂物质侵蚀的材料。 在一个示例中，气体分配装置的每个构件包括陶瓷，熔融石英，聚合物或阳极氧化铝材料中的一种，气体供给管线包括不锈钢。 优选地，每个构件在气体分配装置的组装之前具有其表面抛光。

公开(公告)号：US06488807B1

公开(公告)日：2002-12-03

申请号：US09563825

申请日：2000-05-03

申请人： Kenneth S. Collins ,  Chan-Lon Yang ,  Jerry Yuen-Kui Wong ,  Jeffrey Marks ,  Peter R. Keswick ,  David W. Groechel ,  Craig A. Roderick ,  John R. Trow ,  Tetsuya Ishikawa ,  Jay D. Pinson, II ,  Lawrence Chang-Lai Lei ,  Masato M. Toshima ,  Gerald Zheyao Yin

发明人： Kenneth S. Collins ,  Chan-Lon Yang ,  Jerry Yuen-Kui Wong ,  Jeffrey Marks ,  Peter R. Keswick ,  David W. Groechel ,  Craig A. Roderick ,  John R. Trow ,  Tetsuya Ishikawa ,  Jay D. Pinson, II ,  Lawrence Chang-Lai Lei ,  Masato M. Toshima ,  Gerald Zheyao Yin

IPC分类号： H05H100

CPC分类号： H01J37/32871 ,  C23C16/507 ,  C23C16/517 ,  H01F2029/143 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32458 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01L21/31116 ,  H01L21/6831

摘要： The invention is embodied in an RF plasma reactor for processing a semiconductor workpiece, including wall structures for containing a plasma therein, a workpiece support, a coil antenna capable of receiving a source RF power signal and being juxtaposed near the chamber, the workpiece support including a bias electrode capable of receiving a bias RF power signal, and first and second magnet structures adjacent the wall structure and in spaced relationship, with one pole of the first magnet structure facing an opposite pole of the second magnet structure, the magnet structures providing a plasma-confining static magnetic field adjacent said wall structure. The invention is also embodied in an RF plasma reactor for processing a semiconductor workpiece, including one or more wall structures for containing a plasma therein, a workpiece support, the workpiece support comprising a lower electrode, an upper electrode facing the lower electrode and spaced across a plasma generation region of said chamber from said lower electrode, and first and second magnet structures adjacent the wall structure and in spaced relationship with one pole of the first magnet structure facing an opposite pole of the second magnet structure, the magnet structures providing a plasma-confining static magnetic field adjacent said wall structure.

摘要翻译： 本发明体现在用于处理半导体工件的RF等离子体反应器中，其包括用于在其中容纳等离子体的壁结构，工件支撑件，能够接收源RF功率信号并在该室附近并列的线圈天线，所述工件支撑件包括 能够接收偏置RF功率信号的偏置电极，以及与壁结构相邻并且间隔的关系的第一和第二磁体结构，第一磁体结构的一个磁极面对第二磁体结构的相对极，磁体结构提供 等离子体约束的静磁场与所述壁结构相邻。 本发明还体现在用于处理半导体工件的RF等离子体反应器中，该半导体工件包括一个或多个用于在其中容纳等离子体的壁结构，工件支撑件，工件支撑件包括下电极，上电极面向下电极并间隔开 所述腔室的等离子体产生区域与所述下部电极相邻，第一和第二磁体结构邻近所述壁结构并且与所述第一磁体结构的与所述第二磁体结构的相反极的一极相隔开，所述磁体结构提供等离子体 围绕所述壁结构保持静止磁场。

公开(公告)号：US06440866B1

公开(公告)日：2002-08-27

申请号：US09595750

申请日：2000-06-16

申请人： Kenneth S. Collins ,  Michael Rice ,  David W. Groechel ,  Gerald Zheyao Yin ,  Jon Mohn ,  Craig A. Roderick ,  Douglas Buchberger ,  Chan-Lon Yang ,  Yuen-Kui Wong ,  Jeffrey Marks ,  Peter Keswick

发明人： Kenneth S. Collins ,  Michael Rice ,  David W. Groechel ,  Gerald Zheyao Yin ,  Jon Mohn ,  Craig A. Roderick ,  Douglas Buchberger ,  Chan-Lon Yang ,  Yuen-Kui Wong ,  Jeffrey Marks ,  Peter Keswick

IPC分类号： H01L2100

CPC分类号： H01J37/32871 ,  C23C16/517 ,  H01F2029/143 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32458 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01J2237/3343 ,  H01J2237/3345 ,  H01J2237/3346 ,  H01J2237/3382 ,  H01L21/31116 ,  H01L21/6831

摘要： A general method of the invention is to provide a polymer-hardening precursor piece (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber during an etch process with a fluoro-carbon or fluoro-hydrocarbon gas, and to heat the polymer-hardening precursor piece above the polymerization temperature sufficiently to achieve a desired increase in oxide-to-silicon etch selectivity. Generally, this polymer-hardening precursor or silicon piece may be an integral part of the reactor chamber walls and/or ceiling or a separate, expendable and quickly removable piece, and the heating/cooling apparatus may be of any suitable type including apparatus which conductively or remotely heats the silicon piece.

摘要翻译： 本发明的一般方法是在与氟碳或氟烃气体的蚀刻过程期间在反应器室内提供聚合物硬化前体件（例如硅，碳，碳化硅或氮化硅，但优选为硅） ，并且将聚合物硬化前体件高于聚合温度高于氧化硅对硅蚀刻选择性的期望增加。 通常，该聚合物硬化前体或硅片可以是反应器室壁和/或天花板的一个整体部分或者单独的，可消耗的和快速可拆卸的部件，并且加热/冷却装置可以是任何合适的类型，包括导电的装置 或远程加热硅片。

公开(公告)号：US5897712A

公开(公告)日：1999-04-27

申请号：US683053

申请日：1996-07-16

申请人： Hiroji Hanawa ,  Peter K Loewenhardt ,  Timothy D. Driscoll ,  Gerald Zheyao Yin

发明人： Hiroji Hanawa ,  Peter K Loewenhardt ,  Timothy D. Driscoll ,  Gerald Zheyao Yin

IPC分类号： H05H1/46 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H05H1/00

CPC分类号： H01J37/321

摘要： The present invention reduces those portions of the RF induction field over areas of the wafer experiencing higher etch or deposition rates than those experienced elsewhere on the wafer. Such a controlled reduction of those portions of the RF induction field whose attenuation results in reducing non-uniformity in the etch or deposition rate distribution is obtained by incorporating a plasma uniformity control apparatus into the inductively coupled plasma reactor. The incorporated plasma uniformity control apparatus for controlling the RF induction field produced by the antenna includes one or more conductive bodies which are disposed adjacent to one or more of the radiating elements of the antenna.

摘要翻译： 本发明在晶片的区域上减少RF感应场的那些部分，其经历比在晶片上其他地方经历的蚀刻或沉积速率更高的蚀刻或沉积速率。 通过将等离子体均匀性控制装置并入到电感耦合等离子体反应器中，可以获得衰减导致减小蚀刻或沉积速率分布不均匀性的RF感应场的那些部分的这种受控减少。 用于控制由天线产生的RF感应场的合并等离子体均匀性控制装置包括与天线的一个或多个辐射元件相邻设置的一个或多个导电体。