公开(公告)号：US10575331B2

公开(公告)日：2020-02-25

申请号：US15902965

申请日：2018-02-22

申请人： Oregon State University

发明人： Mohamed Grissa ,  Attila Yavuz ,  Bechir Hamdaoui

IPC分类号： H04W74/08 ,  H04W12/04 ,  H04B17/318 ,  H04L29/06 ,  H04W12/02 ,  H04W16/14 ,  H04W88/16 ,  H04W74/00

摘要： An apparatus is provided which comprises: logic to privately compare one or more received Order Preserving Encrypted (OPE) signal strength (RSS) values, from a plurality of secondary users (SUs), with a OPE threshold value; a transmitter to send the comparison result to a fusion center (FC); and a receiver to receive the OPE threshold value from the FC.

公开(公告)号：US10573385B2

公开(公告)日：2020-02-25

申请号：US15567942

申请日：2015-05-28

申请人： Intel Corporation

发明人： Daniel H. Morris ,  Uygar E. Avci ,  Ian A. Young

IPC分类号： G11C5/02 ,  G11C14/00 ,  G11C11/22 ,  H01L27/11502

摘要： Described is an apparatus which comprises: a first access transistor controllable by a write word-line (WWL); a second access transistor controllable by a read word-line (RWL); and a ferroelectric cell coupled to the first and second access transistors, wherein the ferroelectric cell is programmable via the WWL and readable via the RWL. Described is a method which comprises: driving a WWL, coupled to a gate terminal of a first access transistor, to cause the first access transistor to turn on; and driving a WBL coupled to a source/drain terminal of the first access transistor, the driven WBL to charge or discharge a storage node coupled to the first access transistor when the first access transistor is turned on, wherein the ferroelectric cell is coupled to the storage node and programmable according to the charged or discharged storage node.

公开(公告)号：US10572982B2

公开(公告)日：2020-02-25

申请号：US15724993

申请日：2017-10-04

申请人： Intel Corporation

发明人： Aleksandar Beric ,  Kari Pulli ,  Nemanja Jankovic ,  Zoran Zivkovic

IPC分类号： G06K9/00 ,  G06T5/00 ,  H04N5/357 ,  H04N5/217 ,  H04N5/232

摘要： Techniques related to image distortion correction for images captured by using a wide-angle lens include homography and a lens distortion correction using a radial-ratio-based look up table.

公开(公告)号：US10571992B2

公开(公告)日：2020-02-25

申请号：US15634805

申请日：2017-06-27

申请人： INTEL CORPORATION

发明人： Robert E. Gough ,  Mazen G. Gedeon ,  Barnes Cooper ,  Basavaraj B. Astekar ,  Sean C. Dardis

IPC分类号： G06F1/32 ,  G06F1/3234 ,  G06F1/3231 ,  G06F1/3293

摘要： An electronic device may be provided that includes a first controller, a second controller, and a bus to connect between the first controller and the second controller. The electronic device may also include a first signal line between the first controller and the second controller, and the first controller to provide a first signal on the first signal line to the second controller to wake up the second controller from a low power mode.

公开(公告)号：US10559073B2

公开(公告)日：2020-02-11

申请号：US15078735

申请日：2016-03-23

申请人： INTEL CORPORATION

发明人： Jun Nishimura

IPC分类号： G06T5/50

摘要： Techniques related to temporal noise reduction of images are discussed. Such techniques may include generating a noise stream corresponding to an input image and adaptively re-combining the noise stream with a reference image corresponding to the input image and a spatially noise reduced image corresponding to the input image to generate a temporal noise reduced output image.

公开(公告)号：US10555002B2

公开(公告)日：2020-02-04

申请号：US15002697

申请日：2016-01-21

申请人： INTEL CORPORATION

发明人： Ximin Zhang ,  Sang-Hee Lee ,  Dmitry E. Ryzhov

IPC分类号： H04N19/58 ,  H04N19/126 ,  H04N19/146 ,  H04N19/177 ,  H04N19/593 ,  H04N19/70

摘要： Techniques related to long term reference picture video coding are discussed. Such techniques include determining long term reference pictures for a sequence of pictures, adjusting the quantization parameters for the long term reference pictures based on temporal correlations for pictures temporally neighboring and including the long term reference pictures, and managing reference picture lists including the long term reference pictures.

公开(公告)号：US10554977B2

公开(公告)日：2020-02-04

申请号：US15859100

申请日：2017-12-29

申请人： INTEL CORPORATION

发明人： Fangwen Fu ,  Iole Moccagatta

IPC分类号： H04N19/13 ,  H04N19/176 ,  H04N19/182

摘要： A method, system, and articles of high throughput arithmetic entropy coding for video coding uses a non-framewidth raster order or non-raster order to form spatial neighbor probability contexts for entropy coding.

公开(公告)号：US10552962B2

公开(公告)日：2020-02-04

申请号：US15499782

申请日：2017-04-27

申请人： Intel Corporation

发明人： Daniel Socek ,  Atul Puri

IPC分类号： G06T7/215 ,  G06T7/11

摘要： Techniques related to improved video frame segmentation based on motion, color, and texture are discussed. Such techniques may include segmenting a video frame of a video sequence based on differencing global motion or dominant motion from local motion in the video frame.

公开(公告)号：US10546858B2

公开(公告)日：2020-01-28

申请号：US15579180

申请日：2015-06-27

申请人： Intel Corporation

发明人： Jack T. Kavalieros ,  Chandra S. Mohapatra ,  Anand S. Murthy ,  Willy Rachmady ,  Matthew V. Metz ,  Gilbert Dewey ,  Tahir Ghani ,  Harold W. Kennel

IPC分类号： H01L27/092 ,  H01L29/08 ,  H01L29/78 ,  H01L27/06 ,  H01L21/306 ,  H01L29/66 ,  H01L21/225 ,  H01L21/324 ,  H01L21/8258 ,  H01L29/205 ,  H01L29/207

摘要： Monolithic finFETs including a majority carrier channel in a first III-V compound semiconductor material disposed on a second III-V compound semiconductor. While a mask, such as a sacrificial gate stack, is covering the channel region, a source of an amphoteric dopant is deposited over exposed fin sidewalls and diffused into the first III-V compound semiconductor material. The amphoteric dopant preferentially activates as a donor within the first III-V material and an acceptor with the second III-V material, providing transistor tip doping with a p-n junction between the first and second III-V materials. A lateral spacer is deposited to cover the tip portion of the fin. Source/drain regions in regions of the fin not covered by the mask or spacer electrically couple to the channel through the tip region. The channel mask is replaced with a gate stack.

公开(公告)号：US10546823B2

公开(公告)日：2020-01-28

申请号：US15767306

申请日：2015-11-13

申请人： INTEL CORPORATION

发明人： Balu Pathangey ,  Mihir A. Oka ,  Andrew Proctor

IPC分类号： H01L23/00 ,  H01L21/67 ,  H01L21/683 ,  H01L21/78 ,  H01L25/065 ,  H01L25/18

摘要： Described is an apparatus which comprises: a die having a first side and a second side opposite to the first side; a die backside film (DBF) or die attach film (DAF) disposed over the first side of the die; and a fluorocarbon layer disposed over the DBF or DAF. Described is a method which comprises: applying a die backside film (DBF) over a first side of a die, wherein the die has a second side which metal bumps; and applying a plasma polymerization process to treat the DBF with a fluorocarbon plasma.