公开(公告)号：US09797061B2

公开(公告)日：2017-10-24

申请号：US14928740

申请日：2015-10-30

申请人： General Electric Company

发明人： Arie Shahar ,  Eliezer Traub ,  Peter Rusian ,  Juan Carlos Rojo

IPC分类号： C30B11/00 ,  C30B29/48

CPC分类号： C30B11/003 ,  C30B29/48 ,  Y10T117/1092

摘要： A system for growing a crystal is provided that includes a crucible, a furnace, and a heat transfer device. The crucible has a first volume to receive therein a material for growing a crystal. The furnace has an ampoule configured to receive the crucible within the ampoule. The furnace is configured to produce a lateral thermal profile combined with a vertical thermal gradient. The heat transfer device is disposed under the crucible and configured to produce a leading edge of growth of the crystal at a bottom of the crucible. The heat transfer device includes at least one elongate member disposed beneath the crucible and extending along a length of the crucible.

公开(公告)号：US09751774B2

公开(公告)日：2017-09-05

申请号：US14426094

申请日：2013-05-31

申请人： THE XINJIANG TECHNICAL INSTITUTE OF PHYSICS & CHEMISTRY, CHINESE ACADEMY OF SCIENCES

发明人： Shilie Pan ,  Hongping Wu ,  Hongwei Yu

IPC分类号： C01B35/10 ,  C30B11/00 ,  G02F1/355 ,  C01D17/00 ,  C30B9/12 ,  C30B29/22

CPC分类号： C01D17/003 ,  C01B35/10 ,  C01D17/00 ,  C01P2002/70 ,  C30B9/12 ,  C30B11/003 ,  C30B29/22 ,  G02F1/3551

摘要： The present invention relates to a cesium borosilicate compound, a nonlinear optical crystal of cesium borosilicate, and a preparation method therefor and a use thereof. The cesium borosilicate compound has a chemical formula of Cs2B4SiO9 and a molecular weight of 481.15, and is prepared using a solid phase method. The nonlinear optical crystal of the cesium borosilicate compound has a chemical formula of Cs2B4SiO9 and a molecular weight of 481.15, does not have a center of symmetry, belongs to the tetragonal system with space group I4 and unit-cell parameters a=6.731(3) Å, c=9.871(9) Å and V=447.2(5) Å3, and has a wide transmittance range. The shortest ultraviolet cutoff edge is smaller than 190 nm, the frequency doubling effect of the crystal is 4.6 KDP, and the crystal is grown by a high-temperature solution spontaneous crystallization method and a flux method. The crystal has advantages of high growth rate, being transparent and inclusion free, low cost having a wide transmittance range, high hardness, good mechanical property, being crack resistant and not prone to deliquescence, being easy to process and store, and the like. The crystal is widely applied to manufacturing of nonlinear optical devices such as frequency doubling generators, frequency up-converters, frequency down-converters or optical parametric oscillators.

公开(公告)号：US09678223B2

公开(公告)日：2017-06-13

申请号：US14239366

申请日：2012-08-17

申请人： Daisuke Totsuka ,  Susumu Matsumoto ,  Akira Yoshikawa ,  Takayuki Yanagida

发明人： Daisuke Totsuka ,  Susumu Matsumoto ,  Akira Yoshikawa ,  Takayuki Yanagida

IPC分类号： C09K11/74 ,  G01T1/202 ,  C30B29/12 ,  C09K11/02 ,  G21K4/00 ,  C30B11/00 ,  C30B15/00

CPC分类号： G01T1/2023 ,  C09K11/025 ,  C09K11/7435 ,  C30B11/00 ,  C30B15/00 ,  C30B29/12 ,  G21K4/00 ,  G21K2004/06

摘要： An afterglow property of cesium iodide:thallium (CsI:Tl), in which CsI is a host material and doped with thallium, is improved. It is possible to improve the afterglow property of a scintillator by doping a crystal material including CsI (cesium iodide), as a host material, and thallium (Tl), as a luminescent center, with bismuth (Bi).

公开(公告)号：US09617618B2

公开(公告)日：2017-04-11

申请号：US14375743

申请日：2013-02-01

申请人： Silicor Materials Inc.

发明人： Abdallah Nouri ,  Chunhui Zhang ,  Kamel Ounadjela

IPC分类号： C22B9/00 ,  C22B21/06 ,  C01B33/03 ,  C30B11/00 ,  C30B29/06 ,  C01B33/037 ,  C01B33/02 ,  F27B14/14 ,  F27B14/20

CPC分类号： C22B9/00 ,  C01B33/02 ,  C01B33/037 ,  C22B21/06 ,  C30B11/002 ,  C30B11/003 ,  C30B29/06 ,  F27B14/14 ,  F27B14/20

摘要： The present invention relates to an apparatus and method for purifying materials using a fractional solidification. Devices and methods shown provide control over a temperature gradient and cooling rate during fractional solidification, which results in a material of higher purity. The apparatus and methods of the present invention can be used to make silicon material for use in solar applications such as solar cells.

公开(公告)号：US09616489B2

公开(公告)日：2017-04-11

申请号：US14427485

申请日：2013-09-06

申请人： SNECMA

发明人： Dominique Coyez ,  Serge Fargeas

IPC分类号： B22C7/02 ,  B22C9/04 ,  B22D27/04 ,  C30B11/00 ,  C30B29/52 ,  B22C9/22 ,  B22D29/00

CPC分类号： B22C7/02 ,  B22C9/04 ,  B22C9/22 ,  B22D27/045 ,  B22D29/00 ,  C30B11/002 ,  C30B29/52

摘要： A casting pattern for a lost-pattern casting, the pattern being in a shape of a turbine engine blade with a root and a body on either side of a platform that is substantially perpendicular to a main axis of the blade, and a method of producing a shell mold from the pattern, and a casting method using the shell mold. The blade body presents a pressure side, a suction side, a leading edge, and a trailing edge. The pattern also includes an expansion strip adjacent to the trailing edge, and a refractory core embedded in the pattern but presenting, both on the pressure side and on the suction side, a respective flush varnished surface between the trailing edge and the expansion strip. A web extends between the platform and the expansion strip and presents a free edge between them.

公开(公告)号：US20170057831A1

公开(公告)日：2017-03-02

申请号：US15351290

申请日：2016-11-14

申请人： Silicor Materials Inc.

发明人： Chunhui Zhang ,  Alain Turenne ,  Christain Alfred

IPC分类号： C01B33/037 ,  C30B9/12 ,  C30B29/06 ,  C30B11/00

CPC分类号： C01B33/037 ,  C30B9/12 ,  C30B11/00 ,  C30B29/06

摘要： The present invention provides for a flux composition, and the use thereof in a directional solidification for the purification of silicon.

摘要翻译： 本发明提供助熔剂组合物及其在定向固化中用于硅的纯化的用途。

公开(公告)号：US09574825B2

公开(公告)日：2017-02-21

申请号：US13613472

申请日：2012-09-13

申请人： Benjamin Michael Meyer ,  Lee William Ferry

发明人： Benjamin Michael Meyer ,  Lee William Ferry

IPC分类号： C03B5/027 ,  C30B11/00 ,  F27D9/00 ,  C30B28/06 ,  C01B33/021 ,  F27B14/20 ,  C30B29/06

CPC分类号： F27D9/00 ,  C01B33/021 ,  C30B11/002 ,  C30B11/003 ,  C30B11/006 ,  C30B28/06 ,  C30B29/06 ,  F27B14/20

摘要： A directional solidification furnace includes one or more movable cooling plates disposed beneath a crucible. In a first position, the cooling plates are free from contact with a crucible support positioned adjacent the crucible. In a second position, the cooling plates are in contact with the crucible support. A control system is used to control the amount of force exerted by the cooling plates against the crucible.

摘要翻译： 定向凝固炉包括设置在坩埚下方的一个或多个可移动冷却板。 在第一位置，冷却板与邻近坩埚定位的坩埚支架不接触。 在第二位置，冷却板与坩埚支架接触。 控制系统用于控制冷却板对坩埚施加的力的量。

公开(公告)号：US09561969B2

公开(公告)日：2017-02-07

申请号：US14688879

申请日：2015-04-16

申请人： University of Tennessee Research Foundation

发明人： Hua Wei ,  Luis Stand ,  Mariya Zhuravleva ,  Charles Melcher

IPC分类号： G01T1/202 ,  C01D17/00 ,  C30B29/12 ,  C09K11/77 ,  C30B11/00

CPC分类号： C01D17/003 ,  C09K11/7705 ,  C09K11/7773 ,  C30B11/00 ,  C30B29/12

摘要： The present disclosure is directed to a group of newly discovered intrinsic scintillation compounds. As intrinsic scintillators, these compounds do not require an external activator as a dopant. The new scintillators may include members of two elpasolite families with the general exemplary formulas of A2BMX(6-y)X′y and A3MX(6-y)X′y, (0

摘要翻译： 本公开涉及一组新发现的本征闪烁化合物。 作为固有闪烁体，这些化合物不需要外部活化剂作为掺杂剂。 新的闪烁体可以包括具有A2BMX（6-y）X'y和A3MX（6-y）X'y，（0

公开(公告)号：US09555471B2

公开(公告)日：2017-01-31

申请号：US14165719

申请日：2014-01-28

申请人： GENERAL ELECTRIC COMPANY

发明人： Jian Zheng ,  Arthur S. Peck

IPC分类号： B22D25/06 ,  B22D27/04 ,  C30B11/00 ,  C30B29/52

CPC分类号： B22D25/06 ,  B22D27/045 ,  C30B11/003 ,  C30B11/006 ,  C30B29/52

摘要： A casting method and cast article are provided. The casting method includes providing a casting furnace, the casting furnace including a withdrawal region in a lower end, positioning a mold within the casting furnace, positioning a molten material in the mold, partially withdrawing the mold a withdrawal distance through the withdrawal region in the casting furnace, the withdrawal distance providing a partially withdrawn portion, then reinserting at least a portion of the partially withdrawn portion into the casting furnace through the withdrawal region, and then completely withdrawing the mold from the casting furnace. The reinserting partially re-melts a solidified portion within the partially withdrawn portion to fill pores formed therein with the molten material. The cast article includes a microstructure and a porosity corresponding to being formed by a process comprising partially withdrawing, reinserting, and completely withdrawing of a mold from a casting furnace to form the cast article.

摘要翻译： 提供铸造方法和铸造制品。 铸造方法包括提供铸造炉，铸造炉包括下端的取出区域，将模具定位在铸造炉内，将熔融材料定位在模具中，通过在模具中的退出区域部分地抽出模具的取出距离 退出距离提供部分撤回部分，然后通过退出区域将至少部分撤回部分重新插入铸造炉中，然后从铸造炉中完全取出模具。 重新插入部分地再次熔化部分抽出部分内的凝固部分，以填充其中形成的熔融材料的孔。 铸造制品包括微观结构和孔隙度，其对应于通过包括从铸造炉部分地取出，重新插入和完全取出模具的方法形成，以形成铸造制品。

公开(公告)号：US20170016140A1

公开(公告)日：2017-01-19

申请号：US15124319

申请日：2015-03-30

申请人： Commissariat à l'Energie Atomique et aux Energies Alternatives

发明人： Denis CHAVRIER ,  Jean-Paul GARANDET ,  Etienne PIHAN

IPC分类号： C30B11/00 ,  C30B29/06 ,  H01L31/18 ,  B05D7/22 ,  B05D3/00 ,  B28D5/04 ,  C30B11/02 ,  C30B33/00

CPC分类号： C30B11/002 ,  B05D3/007 ,  B05D7/22 ,  B28D5/04 ,  C30B11/02 ,  C30B29/06 ,  C30B33/00 ,  C30B33/06 ,  C30B35/002 ,  H01L31/1804 ,  H01L31/1864

摘要： A crucible for formation of a crystalline material by solidification by growth on seed, including a bottom, at least one side wall orthogonal to the bottom of the crucible, and at least two marks extending on the inner surface of the at least one side wall in an orthogonal direction to the bottom of the crucible, for materialising the position of at least one seed designed to be positioned at the bottom of the crucible, the seed including at least first and second surfaces orthogonal to the bottom of the crucible. The respective positions of at least two of the marks on at least one of the side walls define, in the crystalline material, a first cutting plane tangent to the first surface of the seed and a second cutting plane tangent to the second surface of the seed.

摘要翻译： 一种用于通过在种子上生长固化形成结晶材料的坩埚，包括底部，与坩埚底部正交的至少一个侧壁，以及在至少一个侧壁的内表面上延伸的至少两个标记 与坩埚底部的正交方向，用于实现设计成位于坩埚底部的至少一个种子的位置，种子至少包括与坩埚底部正交的第一和第二表面。 在至少一个侧壁上的至少两个标记的相应位置在结晶材料中限定与种子的第一表面相切的第一切割平面和与种子的第二表面相切的第二切割平面 。