公开(公告)号：US20110217556A1

公开(公告)日：2011-09-08

申请号：US13038721

申请日：2011-03-02

申请人： TAKESHI DEGUCHI ,  Yoshito Ito ,  Kei Kikuchi ,  Nobuyoshi Toyohara

发明人： TAKESHI DEGUCHI ,  Yoshito Ito ,  Kei Kikuchi ,  Nobuyoshi Toyohara

IPC分类号： B32B27/36 ,  B32B27/32 ,  B32B27/30 ,  B05D5/06

CPC分类号： G02B1/10 ,  B05D5/06 ,  B32B7/02 ,  B32B27/30 ,  B32B27/32 ,  B32B27/36 ,  B32B33/00 ,  G02B1/115 ,  H05H1/24 ,  Y10T428/31507 ,  Y10T428/31855 ,  Y10T428/31938

摘要： An optical component that includes a substrate and an optical thin film formed on the substrate. An internal stress σ (in units of MPa) satisfies Expression (1) given below when x=|E/R| is in the range of 0 to 3: σ≦−30x  (1), where E is an effective optical diameter (in units of mm) of the substrate, R is a radius of curvature (in units of mm) of the substrate, and x is an absolute value of a ratio of E to R.

摘要翻译： 一种光学部件，包括形成在基板上的基板和光学薄膜。 内部压力 （以MPa为单位）满足下式（1）时的x = | E / R | 在0至3的范围内：＆sgr;＆nlE; -30x（1）其中E是基板的有效光学直径（以mm为单位），R是曲率半径（以mm为单位） 衬底，x是E与R之比的绝对值。

公开(公告)号：US20110212624A1

公开(公告)日：2011-09-01

申请号：US12713523

申请日：2010-02-26

申请人： Eric A. Hudson

发明人： Eric A. Hudson

IPC分类号： H01L21/3065 ,  C23F1/08

CPC分类号： H01L21/3065 ,  H01J37/32532 ,  H01J37/32541 ,  H01J37/32596 ,  H01J2237/182 ,  H01L21/31116 ,  H05H1/24

摘要： A method of etching a semiconductor wafer including injecting a source gas mixture into a process chamber including injecting the source gas mixture into a multiple hollow cathode cavities in a top electrode of the process chamber and generating a plasma in each one of the hollow cathode cavities. Generating the plasma in the hollow cathode cavities includes applying a first biasing signal to the hollow cathode cavities. The generated plasma or activated species is output from corresponding outlets of each of the hollow cathode cavities into a wafer processing region in the process chamber. The wafer processing region is located between the outlets of the hollow cathode cavities and a surface to be etched. An etchant gas mixture is injected into the wafer processing region. A plasma can also be supported and/or generated in the wafer processing region. The etchant gas mixture is injected through multiple injection ports in the top electrode such that the etchant gas mixture mixes with the plasma output from the outlets of the hollow cathode cavities. The etchant gas mixture is substantially prevented from flowing into the outlets of the hollow cathode cavities by the plasma flowing from the outlets of hollow cathode cavities. Mixing the etchant gas mixture and the output from the hollow cathode cavities generates a desired chemical species in the wafer processing region and the surface to be etched can be etched. A system for generating an etching species is also describer herein.

摘要翻译： 一种蚀刻半导体晶片的方法，包括将源气体混合物注入到处理室中，包括将源气体混合物注入到处理室的顶部电极中的多个空心阴极腔中，并在每个空心阴极腔中产生等离子体。 在中空阴极腔中产生等离子体包括将第一偏置信号施加到中空阴极腔。 产生的等离子体或活化物质从每个空心阴极腔的相应出口输出到处理室中的晶片处理区域。 晶片处理区域位于中空阴极腔的出口和待蚀刻的表面之间。 将蚀刻气体混合物注入晶片处理区域。 等离子体也可以在晶片处理区域中被支持和/或产生。 蚀刻剂气体混合物通过顶部电极中的多个注入口注入，使得蚀刻剂气体混合物与来自空心阴极腔的出口的等离子体输出混合。 通过等离子体从空心阴极腔的出口流出，基本上防止了蚀刻剂气体混合物流入空心阴极腔的出口。 将蚀刻剂气体混合物和来自空心阴极腔的输出混合在晶片加工区域中产生所需的化学物质，并且可以蚀刻待蚀刻的表面。 本文还描述了用于产生蚀刻物质的系统。

公开(公告)号：US20110112528A1

公开(公告)日：2011-05-12

申请号：US12855177

申请日：2010-08-12

申请人： Manfred STIEBER ,  Klaus-Dieter Weltmann ,  Thomas Von Woedtke ,  Christian Wilke ,  Uwe Ehrenberg

发明人： Manfred STIEBER ,  Klaus-Dieter Weltmann ,  Thomas Von Woedtke ,  Christian Wilke ,  Uwe Ehrenberg

IPC分类号： A61B18/18 ,  C12M1/00 ,  A61L2/14

CPC分类号： A61N1/44 ,  A61L2/0011 ,  A61L2/14 ,  A61N1/0412 ,  A61N1/327 ,  C12M35/02 ,  C12N13/00 ,  H05H1/24 ,  H05H1/2406 ,  H05H2001/2412 ,  H05H2245/122

摘要： A method and device for treatment of living cells with cold atmospheric pressure plasma while simultaneously applying selective electroporation of the cells are provided. The method is useful for the local selective killing of cancer cells, improvement of wound treatment and sterilization or decontamination of objects.

摘要翻译： 提供了一种用于处理具有冷气压等离子体的活细胞同时施加细胞选择性电穿孔的方法和装置。 该方法可用于局部选择性杀死癌细胞，改善伤口治疗和灭菌或物体去污。

公开(公告)号：US20110026658A1

公开(公告)日：2011-02-03

申请号：US12845071

申请日：2010-07-28

申请人： Stephen James Howard ,  Michel Georges Laberge ,  Lon McIlwraith ,  Douglas Harvey Richardson ,  James Gregson

发明人： Stephen James Howard ,  Michel Georges Laberge ,  Lon McIlwraith ,  Douglas Harvey Richardson ,  James Gregson

IPC分类号： H05H1/12

CPC分类号： H05H1/02 ,  G21B3/006 ,  G21B3/008 ,  H05H1/24 ,  H05H1/54

摘要： Embodiments of systems and methods for compressing plasma are disclosed in which plasma can be compressed by impact of a projectile on a magnetized plasma in a liquid metal cavity. The projectile can melt in the liquid metal cavity, and liquid metal may be recycled to form new projectiles.

公开(公告)号：US20100307687A1

公开(公告)日：2010-12-09

申请号：US12838096

申请日：2010-07-16

申请人： Kouji MITSUHASHI ,  Hiroyuki Nakayama ,  Nobuyuki Nagayama ,  Tsuyoshi Moriya ,  Hiroshi Nagaike

发明人： Kouji MITSUHASHI ,  Hiroyuki Nakayama ,  Nobuyuki Nagayama ,  Tsuyoshi Moriya ,  Hiroshi Nagaike

IPC分类号： C23F1/08 ,  C23C4/06

CPC分类号： H05H1/24 ,  C23C16/4404 ,  H01J37/32477 ,  Y10T428/249969 ,  Y10T428/24997 ,  Y10T428/31544 ,  Y10T428/31663 ,  Y10T428/31721

摘要： An internal member of a plasma processing vessel includes a base material and a film formed by thermal spraying of ceramic on a surface of the base material. The film is formed of ceramic which includes at least one kind of element selected from the group consisting of B, Mg, Al, Si, Ca, Cr, Y, Zr, Ta, Ce and Nd. In addition, at least a portion of the film is sealed by a resin.

摘要翻译： 等离子体处理容器的内部部件包括基材和通过在基材的表面上热喷涂陶瓷而形成的膜。 该膜由包括选自B，Mg，Al，Si，Ca，Cr，Y，Zr，Ta，Ce和Nd中的至少一种元素的陶瓷形成。 此外，膜的至少一部分被树脂密封。

公开(公告)号：US20090155490A1

公开(公告)日：2009-06-18

申请号：US12063761

申请日：2006-08-24

申请人： Matthias Bicker ,  Robert Hormes ,  Manfred Lohmeyer

发明人： Matthias Bicker ,  Robert Hormes ,  Manfred Lohmeyer

IPC分类号： C23C16/513 ,  H05H1/24 ,  B65D23/02 ,  A61L2/14

CPC分类号： H05H1/24 ,  C23C16/006 ,  C23C16/045 ,  C23C16/401 ,  C23C16/405 ,  C23C16/45523 ,  C23C16/511 ,  G10K1/064 ,  H01J37/32082 ,  H01J37/32192 ,  H01J37/32394

摘要： The invention relates to a method for the plasma treatment of workpieces, particularly workpieces in the form of hollow bodies, in which a treatment zone in a reactor chamber is at least partially evacuated, a process gas is introduced into the treatment zone, particularly into the cavity of the workpiece, and a plasma is ignited by means of injected electromagnetic energy in the process gas introduced into the treatment zone, wherein the process gas flows through the treatment zone between opposite ends of the zone during the plasma treatment.

摘要翻译： 本发明涉及一种用于等离子体处理工件的方法，特别是中空体形式的工件，其中反应器室中的处理区至少部分抽真空，工艺气体被引入处理区，特别是进入处理区 工件的空腔，并且通过在引入处理区域的工艺气体中注入的电磁能来点燃等离子体，其中处理气体在等离子体处理期间流过该区域的相对端之间的处理区域。

公开(公告)号：US20090145546A1

公开(公告)日：2009-06-11

申请号：US12300546

申请日：2007-06-22

申请人： Yoshimasa Inamoto ,  Hachiro Nakatsuji ,  Kazuhiro Inoue ,  Hiroyuki Tsuji

发明人： Yoshimasa Inamoto ,  Hachiro Nakatsuji ,  Kazuhiro Inoue ,  Hiroyuki Tsuji

IPC分类号： B32B37/00

CPC分类号： H05H1/24 ,  B23K11/0006 ,  B23K20/10 ,  B23K35/38 ,  B23K35/383 ,  H01L24/75 ,  H01L24/81 ,  H01L2221/68313 ,  H01L2224/75 ,  H01L2224/75302 ,  H01L2224/75743 ,  H01L2224/81009 ,  H01L2224/81013 ,  H01L2224/81054 ,  H01L2224/81075 ,  H01L2224/81203 ,  H01L2224/81801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/014 ,  H05K3/3489 ,  H05K2203/0195 ,  H05K2203/082 ,  H05K2203/086 ,  H05K2203/095

摘要： An electrode bonding method according to the present invention includes: a plasma cleaning step of irradiating an electrode surface to be cleaned of at least either one of a part, such as a semiconductor device, and a substrate with atmospheric pressure plasma for cleaning; an inert gas atmosphere maintaining step of covering the electrode surface to be cleaned and its vicinity with a first inert gas before the irradiation of the atmospheric pressure plasma is ended, and maintaining that state even thereafter; and a bonding step of bonding an electrode of the part and an electrode on the substrate before the inert gas atmosphere maintaining step is ended. The electrode surface is thereby plasma-cleaned without the possibility of damaging the part to be bonded to the substrate, and the cleaned state is maintained while bonding the electrodes to provide an electrode bonding state of high bonding force and high reliability.

摘要翻译： 根据本发明的电极接合方法包括：等离子体清洗步骤，用用于清洗的大气压等离子体照射诸如半导体器件的部分中的至少任一个的待清洁电极表面; 在大气压等离子体照射之前，用第一惰性气体覆盖待清洗电极表面及其附近的惰性气体气氛保持步骤，甚至在此之后保持该状态; 以及在惰性气体保持步骤结束之前将部件的电极和电极接合在基板上的接合步骤。 电极表面由此进行等离子体清洁，而不会损坏要与基板接合的部件，并且在粘合电极的同时保持清洁状态以提供高粘合力和高可靠性的电极接合状态。

公开(公告)号：US20090133626A1

公开(公告)日：2009-05-28

申请号：US11995185

申请日：2006-07-12

申请人： Jean-Michel Rius ,  Guy Feuilloley

发明人： Jean-Michel Rius ,  Guy Feuilloley

IPC分类号： C23C16/52

CPC分类号： H05H1/24 ,  C23C16/045 ,  C23C16/52 ,  H05H1/0025

摘要： An apparatus (1) for PECVD deposition of a thin layer of a barrier-effect material in a receptacle (3), the apparatus comprising: a structure (5) receiving the receptacle (3), said structure (5) defining a plasma-presence zone (18), said structure (5) being provided with an orifice (14) defining an axis (A1) and presenting an inside opening (15) opening out into the plasma-presence zone (18), and an outside opening (16) opening out outside said zone (18); an electromagnetic wave generator; and an optical plasma monitor device (19) including a pick-up (21) placed outside the plasma-presence zone (18) on the axis (A1) of said orifice.

摘要翻译： 一种用于将PECVD沉积在容器（3）中的阻挡效应材料的薄层的装置（1），所述装置包括：接收所述容器（3）的结构（5），所述结构（5）限定等离子体 - 存在区域（18），所述结构（5）设置有限定轴线（A1）的孔口（14），并且具有开口进入等离子体存在区域（18）的内部开口（15）和外部开口 16）在所述区域（18）外面打开; 电磁波发生器; 以及包括放置在所述孔口的轴线（A1）上的等离子体存在区域（18）外部的拾取器（21）的光学等离子体监视器装置（19）。

公开(公告)号：US20080017810A1

公开(公告)日：2008-01-24

申请号：US11488918

申请日：2006-07-19

申请人： Olav Waldemar Vladimir Frijns

发明人： Olav Waldemar Vladimir Frijns

IPC分类号： G03F7/20

CPC分类号： H05H1/24 ,  B82Y10/00 ,  G03F7/70033 ,  G03F7/70091 ,  G03F7/70133 ,  G03F7/70191 ,  H05G2/003 ,  H05G2/008

摘要： A method to align a discharge axis of a discharge radiation source with respect to optics of the lithographic apparatus includes creating a discharge in a substance in a discharge space between an anode and a cathode to form a plasma so as to generate electromagnetic radiation. The discharge is triggered by irradiating an area on a surface proximate the discharge space with an energetic beam. The position of the area is controlled in response to a property of the radiation in the lithographic apparatus and/or the temperature of a collector of the lithographic apparatus. Controlling the position of the area which is irradiated improves alignment of the discharge axis with the different lithographic modules, such as the contamination barrier, the illumination system, the substrate table and/or the projection system.

摘要翻译： 将放电辐射源的放电轴相对于光刻设备的光学器件对准的方法包括在阳极和阴极之间的放电空间中的物质中产生放电以形成等离子体以产生电磁辐射。 通过用能量束照射放电空间附近的表面上的区域来触发放电。 响应于光刻设备中的辐射的性质和/或光刻设备的收集器的温度来控制该区域的位置。 控制被照射区域的位置可改善放电轴与不同的光刻模块（例如污染屏障，照明系统，衬底台和/或投影系统）的对准。

公开(公告)号：US6140657A

公开(公告)日：2000-10-31

申请号：US270966

申请日：1999-03-17

申请人： George Wakalopulos ,  Eduardo R. Urgiles

发明人： George Wakalopulos ,  Eduardo R. Urgiles

IPC分类号： A61L2/08 ,  H01J37/32 ,  H05H1/24 ,  H01J37/00 ,  H01J37/30 ,  H01J37/301

CPC分类号： A61L2/087 ,  H01J37/32009 ,  H01J37/3233 ,  H05H1/24 ,  A61L2202/24 ,  H01J2237/335 ,  H05H2245/1225

摘要： A sterilization apparatus wherein one or more electron beam tubes are used to direct electron beams into an ambient gaseous environment to create an electron plasma cloud into which non-sterile target objects may be moved. The electron plasma cloud is formed by interaction of the electron beam with the ambient atmosphere. Helium or other like gaseous may be used to expand the effective volume of the electron plasma cloud. Manipulators are used to move target objects in the electron plasma cloud, exposing non-sterile surfaces to the cloud and then joining the surfaces together where appropriate. The beam tube used to generate the electron beam has a thin low energy absorbing window which allows relatively low energy beams to be used, minimizing damage to materials within the surface of the target objects.

摘要翻译： 一种杀菌装置，其中使用一个或多个电子束管将电子束引导到环境气体环境中以产生可以移动非无菌目标物体的电子等离子体云。 电子等离子体云由电子束与环境气氛的相互作用形成。 可以使用氦气或其它类似气体来扩展电子等离子体云的有效体积。 操纵器用于移动电子等离子体云中的目标物体，将非无菌表面暴露于云中，然后在适当的地方将表面连接在一起。 用于产生电子束的束管具有薄的低能量吸收窗口，其允许使用相对较低的能量束，使对目标物体表面内的材料的损害最小化。