公开(公告)号：US20070047615A1

公开(公告)日：2007-03-01

申请号：US11217884

申请日：2005-09-01

Applicant: Michael Twerdochlib

Inventor： Michael Twerdochlib

IPC: G01J5/00

CPC classification number: G01J5/0003 ,  G01J5/524 ,  G01J5/602 ,  G01J2005/0074

Abstract: A method for measuring the differential emissivity between two sites on the surface of a body and the temperature of the two sites. The method includes a plurality of measurements of the infrared radiation arising from each of the two sites under a number of different conditions. Some of the measurements include irradiation by external infrared radiation at a known wavelength and intensity. The infrared radiation arising from each of the sites may include emitted radiation, reflected ambient radiation, and reflected external radiation. Additionally, the temperature determined using the method described can be used to calibrate infrared imaging devices used to inspect the entire body.

Abstract translation: 一种用于测量身体表面两个位置与两个部位的温度之间的差异发射率的方法。 该方法包括在多个不同条件下从两个位置中的每一个产生的红外辐射的多个测量。 一些测量包括以已知波长和强度的外部红外辐射照射。 从每个地点产生的红外辐射可能包括发射的辐射，反射的环境辐射和反射的外部辐射。 另外，使用所述方法确定的温度可用于校准用于检查整个身体的红外成像装置。

公开(公告)号：US6095682A

公开(公告)日：2000-08-01

申请号：US196191

申请日：1998-11-20

Applicant: Milton Bernard Hollander ,  Michael A. Macchiarelli, Jr. ,  Shahin Baghai

Inventor： Milton Bernard Hollander ,  Michael A. Macchiarelli, Jr. ,  Shahin Baghai

IPC: G01D21/02 ,  G01J5/00 ,  G01J5/02 ,  G01J5/08 ,  G01R15/12

CPC classification number: G01J5/02 ,  G01D21/02 ,  G01J5/025 ,  G01J5/0265 ,  G01J5/04 ,  G01J5/08 ,  G01J5/0846 ,  G01J5/0859 ,  G01J5/089 ,  G01J5/0893 ,  G01J5/0896 ,  G01K1/143 ,  G01K13/00 ,  G01R15/125 ,  G01J2005/0074 ,  G01J2005/0081

Abstract: The combination in an instrument of a multimeter and an instrument having apparatus for determining a non-contact measurement of radiation perceived at a distance from a surface. The instrument may further have an apparatus for determining temperature of that surface by direct contact therewith. The non-contact apparatus may have optical sighting means and laser sighting means, and means for determining emissivity of the surface. Provision may be made for recording data, e.g. a data logger. Audio output may be provided in accordance with temperature determinations, and may include speech synthesizing. Conveniently, the instrument is adapted for holding in the hand, for example by a pistol-grip handle, and/or for mounting on a tripod as well as a threaded connection with a wrist strap or a tripod. Temperatures derived respectively from infrared radiation, and from direct contact, have separate displays. The multimeter and the temperature instrument may have means for their control by vocal command.

Abstract translation: 在万用表的仪器中的组合和具有用于确定在与表面一定距离处感知的辐射的非接触测量的装置的仪器。 该仪器还可以具有通过与其直接接触来确定该表面的温度的装置。 非接触装置可以具有光学瞄准装置和激光瞄准装置，以及用于确定表面的发射率的装置。 可以提供记录数据，例如 数据记录器。 可以根据温度确定提供音频输出，并且可以包括语音合成。 方便地，该仪器适于握持在手中，例如通过手枪把手把手和/或用于安装在三脚架上，以及与腕带或三脚架的螺纹连接。 分别来自红外辐射和直接接触的温度分别显示出来。 万用表和温度仪表可能具有通过声控命令控制的手段。

公开(公告)号：US5314249A

公开(公告)日：1994-05-24

申请号：US976414

申请日：1992-11-13

Applicant: Tomohiro Marui ,  Kazuo Arai

Inventor： Tomohiro Marui ,  Kazuo Arai

IPC: G01J5/00 ,  G01J5/60 ,  G01J5/02

CPC classification number: G01J5/60 ,  G01J2005/0074

Abstract: Radiated light with a specified wavelength from a material is detected and a first parameter corresponding to the emissivity ratio is obtained from the plurality of detection signals. Since the emissivity takes on different values according to the condition of the surface of the material, the first parameter changes depending on the surface condition of the material. There is a correlation between a physical value indicating a condition of the material surface and the first parameter. The correlation remains equivalent even if a second parameter corresponding to the physical value is used instead of the physical value itself (for example, an optical physical value such as reflectivity and absorptivity, the thickness of a film formed on the material surface, the surface roughness, and the degree of galvannealing). As an example of the parameter corresponding to the physical value, there is the logarithmic ratio between emissivities (ln .epsilon..sub.a /ln .epsilon..sub.b) corresponding to the temperature in the vicinity of the surface. Therefore, a second parameter can be obtained on the basis of the correlation and a physical value can be obtained. When the emissivity or logarithmic emissivity ratio is used as the second parameter, the temperature in the vicinity of the material surface can be obtained from the second parameter and the plurality of detection signals.

Abstract translation: 检测到来自材料的指定波长的辐射光，并从多个检测信号获得与发射率相对应的第一参数。 由于发射率根据材料表面的状况而具有不同的值，所以第一参数根据材料的表面状况而变化。 指示材料表面的状态的物理值与第一参数之间存在相关性。 即使使用与物理值对应的第二参数来代替物理值本身（例如，诸如反射率和吸收率的光学物理值，在材料表面上形成的膜的厚度，表面粗糙度 ，以及合金化退火的程度）。 作为对应于物理值的参数的示例，存在对应于表面附近的温度的发射率（lnεa / lnεb）之间的对数比。 因此，可以基于相关性获得第二参数并且可以获得物理值。 当使用发射率或对数发射率作为第二参数时，材料表面附近的温度可以从第二参数和多个检测信号获得。

公开(公告)号：US5305416A

公开(公告)日：1994-04-19

申请号：US042028

申请日：1993-04-02

Applicant: Anthony T. Fiory

Inventor： Anthony T. Fiory

IPC: G01J5/10 ,  G01J5/00 ,  H05B3/62

CPC classification number: G01J5/0003 ,  G01J5/0007 ,  G01J5/08 ,  G01J5/0818 ,  G01J5/0878 ,  G01J2005/0048 ,  G01J2005/0074

Abstract: In a process for heating, e.g., a semiconductor wafer within a processing chamber, the wafer is exposed to a flux of electromagnetic radiation from lamps energized by alternating electric current. The surface temperature of the wafer is measured, and responsively, the radiation flux is controlled. The temperature measurement procedure includes collecting radiation propagating away from the wafer in a first light-pipe probe, collecting radiation propagating toward the wafer in a second light-pipe probe and detecting radiation collected in the respective probes. This procedure further involves determining, in the signal received from each probe, a magnitude of a time-varying component resulting from time-variations of the energizing current, and combining at least these magnitude according to a mathematical expression from which the temperature can be inferred. At least some of the radiation collected by the second probe is collected after reflection from a diffusely reflecting surface. The second probe effectively samples this radiation from an area of the diffusely reflecting surface that subtends a solid angle .OMEGA..sub.2 at the wafer surface. The first probe effectively samples radiation from an area of the wafer that subtends a solid angle .OMEGA..sub.1 at the first probe. The radiation sampling is carried out such that .OMEGA..sub.2 is at least about .OMEGA..sub.1.

Abstract translation: 在加热过程中，例如处理室内的半导体晶片，晶片暴露于由交流电流激励的灯的电磁辐射通量。 测量晶片的表面温度，并且响应地控制辐射通量。 温度测量程序包括收集在第一光管探针中离开晶片传播的辐射，收集在第二光管探针中向晶片传播的辐射并检测在各个探针中收集的辐射。 该过程还包括在从每个探测器接收的信号中确定由激励电流的时间变化导致的时变分量的幅度，并且根据可从其推断温度的数学表达式至少组合这些幅度 。 在从漫反射表面反射之后收集由第二探针收集的至少一些辐射。 第二个探针有效地从弥漫反射表面的面对晶片表面的立体角（Ω）2的区域采样这种辐射。 第一探针有效地从在第一探针处对准立体角（Ω）1的晶片区域的辐射。 进行辐射采样使得（Ω）2为至少约（Ω）1。

公开(公告)号：US5272340A

公开(公告)日：1993-12-21

申请号：US953990

申请日：1992-09-29

Applicant: Michael Anbar

Inventor： Michael Anbar

IPC: G01J5/00 ,  G01N21/64 ,  G01N25/72 ,  G01N25/00

CPC classification number: G01N21/6456 ,  G01J3/32 ,  G01J5/0022 ,  G01J5/0025 ,  G01J5/522 ,  G01J5/601 ,  G01J5/602 ,  G01N25/72 ,  G01J2005/0074 ,  G01J2005/0077

Abstract: The present invention comprises a method and apparatus for determining actual temperature, reflectivity and fluorescence of a surface and comprises in the preferred embodiment a two-dimensional focal plane array of rapidly tunable infrared detectors, 11, adapted to detect the emitted infrared flux from a surface of interest, 10, across pre-selected spectral segments in the 4-15 .mu.m range. The invention further comprises a computer having deconvolution algorithms, 13, for isolating the effects of reflectivity, fluorescence and environmental factors affecting infrared emission for each pixel of the generated image at various spectral segments in the 4-15 .mu.m range. The device further includes means for generating images of temperature, emissivity and fluorescence for diagnostic use. The preferred embodiment of the invention also contemplates the use of thermostated black body reference emitters, 12, at the edges of the field of view for enhancing and speeding deconvolution of the detected data across the 4-15 .mu.m spectrum.

Abstract translation: 本发明包括用于确定表面的实际温度，反射率和荧光的方法和装置，并且在优选实施例中包括快速可调谐红外检测器11的二维焦平面阵列，其适于从表面检测发射的红外线通量 感兴趣的，10个，在4-15亩范围内的预选光谱段之间。 本发明还包括具有去卷积算法的计算机，13，用于分离在4-15μm范围内的各种光谱段处产生的图像的每个像素影响红外发射的反射率，荧光和环境因素的影响。 该装置还包括用于产生用于诊断使用的温度，发射率和荧光图像的装置。 本发明的优选实施例还考虑在视场边缘使用恒温黑体参考发射体12，以增强和加速所检测数据在4-15μm光谱上的去卷积。

公开(公告)号：US5155337A

公开(公告)日：1992-10-13

申请号：US454631

申请日：1989-12-21

Applicant: Furman Y. Sorrell ,  Ronald S. Gyurcsik ,  John A. Harris

Inventor： Furman Y. Sorrell ,  Ronald S. Gyurcsik ,  John A. Harris

IPC: G01B11/06 ,  G01J5/00 ,  G05D23/27 ,  H01L21/00 ,  H05B3/00

CPC classification number: H01L21/67115 ,  G01B11/0658 ,  G01J5/0003 ,  G01J5/0007 ,  G05D23/27 ,  H05B3/0047 ,  G01J2005/0051 ,  G01J2005/0074

Abstract: A rapid thermal processing system is accurately controlled during a deposition process, in which the emissivity of the substrate material changes as a function of the thickness of the deposited layer, by determining the expected emissivity as a function of time during deposition and applying the expected emissivity to a controller to produce a converted temperature which controls the radiant heat sources of the rapid thermal processing system. In one embodiment, the expected emissivity is used to convert a measured pyrometer temperature into a converted pyrometer temperature. The converted pyrometer temperature is applied to a feedback controller which controls the radiant heaters so that the converted pyrometer temperature equals the desired wafer processing temperature. In another embodiment, the expected emissivity is employed to convert the desired rapid thermal processing temperature into a converted desired rapid thermal processing temperature. The converted desired rapid thermal processing temperature is provided to the controller, which controls the radiant heaters so that the measured pyrometer temperature is equal to the converted desired rapid thermal processing temperature.

Abstract translation: 在沉积过程中，快速热处理系统被精确控制，其中衬底材料的发射率随沉积层的厚度而变化，通过在沉积期间确定作为时间的函数的预期发射率并施加预期的发射率 到控制器以产生控制快速热处理系统的辐射热源的转换温度。 在一个实施例中，预期的发射率用于将测量的高温计温度转换成转换的高温计温度。 将转换的高温计温度施加到控制辐射加热器的反馈控制器，使得转换的高温计温度等于所需的晶片处理温度。 在另一个实施例中，使用预期的发射率将期望的快速热处理温度转换成转换的期望的快速热处理温度。 将转换的期望的快速热处理温度提供给控制器，控制器控制辐射加热器，使得测量的高温计温度等于转换的期望的快速热处理温度。

公开(公告)号：US5011295A

公开(公告)日：1991-04-30

申请号：US422644

申请日：1989-10-17

Applicant: Shankar Krishnan ,  George P. Hansen ,  Robert H. Hauge ,  John L. Margrave ,  Charles A. Rey

Inventor： Shankar Krishnan ,  George P. Hansen ,  Robert H. Hauge ,  John L. Margrave ,  Charles A. Rey

IPC: G01J4/00 ,  G01J5/00 ,  G01J5/58 ,  G01N21/21

CPC classification number: G01J5/58 ,  G01J4/04 ,  G01J5/0003 ,  G01J5/0096 ,  G01J5/04 ,  G01J5/047 ,  G01J5/08 ,  G01J5/0809 ,  G01J5/0825 ,  G01J5/0834 ,  G01J5/0846 ,  G01J5/0896 ,  G01J2005/0048 ,  G01J2005/0074 ,  G01J2005/0077 ,  G01N2021/1793 ,  G01N21/21 ,  G01N2201/0696

Abstract: Method and apparatus for accurately and instantaneously determining the thermodynamic temperature of remote objects by continuous determination of the emissivity, the reflectivity, and optical constants, as well as the apparent or brightness temperature of the sample with a single instrument. The emissivity measurement is preferably made by a complex polarimeter including a laser that generates polarized light, which is reflected from the sample into a detector system. The detector system includes a beamsplitter, polarization analyzers, and four detectors to measure independently the four Stokes vectors of the reflected radiation. The same detectors, or a separate detector in the same instrument, is used to measure brightness temperature. Thus, the instrument is capable of measuring both the change in polarization upon reflection as well as the degree of depolarization and hence diffuseness. This enables correction for surface roughness of the sample and background radiation, which could otherwise introduce errors in temperature measurement.

Abstract translation: 通过用单个仪器连续测定样品的发射率，反射率和光学常数以及样品的表观或亮度温度来准确和瞬时地确定远程物体的热力学温度的方法和设备。 发射率测量优选由包括产生偏振光的激光器的复合旋光计来进行，该偏振光从样品反射到检测器系统中。 检测器系统包括分束器，偏振分析器和四个检测器，以独立地测量反射辐射的四个斯托克斯矢量。 相同的检测器或相同仪器中的单独检测器用于测量亮度温度。 因此，该仪器能够测量反射时的极化的变化以及去极化的程度，从而测量扩散度。 这样可以校正样品的表面粗糙度和背景辐射，否则会导致温度测量误差。

公开(公告)号：US4979133A

公开(公告)日：1990-12-18

申请号：US308432

申请日：1989-02-08

Applicant: Jiro Arima ,  Hiroji Tsujimura

Inventor： Jiro Arima ,  Hiroji Tsujimura

IPC: G01J5/52 ,  G01J5/00 ,  G01N21/31

CPC classification number: G01J5/08 ,  G01J5/0003 ,  G01J5/0821 ,  G01J5/0846 ,  G01J5/0896 ,  G01J5/602 ,  G01J2005/0051 ,  G01J2005/0074 ,  G01N2021/3148 ,  G01N2021/558

Abstract: A pyrometer according to the present invention calculates a temperature of a target to be measured by means of light emitting device for emitting reference light having three wavelengths to the target, and light measuring portions for measuring the intensity of the reference light, the intensity of light reflected by the target, the intensity of light transmitted through the target and the intensity of light radiated by the target, respectively with respect to each of the three wavelengths. The transmitted light measured value of the reference light transmitted through the target is used for temperature calculation in addition to the measured values of the reference light, the reflected light and the radiated light, and therefore even if the target is a semi-transparent object, the true temperature thereof can be calculated.

公开(公告)号：US4919542A

公开(公告)日：1990-04-24

申请号：US186558

申请日：1988-04-27

Applicant: Jaim Nulman ,  Nick J. Bacile ,  Wendell T. Blonigan

Inventor： Jaim Nulman ,  Nick J. Bacile ,  Wendell T. Blonigan

IPC: G01J5/00 ,  G01J5/60

CPC classification number: G01J5/0003 ,  G01J5/0007 ,  G01J5/04 ,  G01J5/08 ,  G01J5/0809 ,  G01J5/0834 ,  G01J5/0853 ,  G01J5/0896 ,  G01J2005/0074 ,  G01J5/602

Abstract: Radiation detectors and method measure the emissivity of a remote, heated semiconductor wafer in the presence of ambient radiation. Incident radiation within a selected waveband from a controlled source intermittently radiates the remote wafer, and reflected radiation therefrom is detected in synchronism with the intermittent incident radiation to yield output indications of emissivity of the wafer under varying processing conditions. The temperature of the wafer is monitored by another radiation detector (or detectors) operating substantially within the same selected waveband, and the temperature indications thus derived are corrected in response to the output indications of emissivity to provide indications of the true temperature of the wafer.

Abstract translation: 辐射探测器和方法在环境辐射的情况下测量远程加热的半导体晶片的辐射率。 来自受控源的所选波段内的入射辐射间歇地辐射远程晶片，并且与间歇入射辐射同步地检测来自其的反射辐射，以在变化的处理条件下产生晶片的发射率的输出指示。 晶片的温度由基本上在相同的所选波段内工作的另一个辐射检测器（或检测器）来监测，并且根据发射率的输出指示校正如此导出的温度指示，以提供晶片的真实温度的指示。

公开(公告)号：US4890245A

公开(公告)日：1989-12-26

申请号：US99297

申请日：1987-09-17

Applicant: Masahiko Yomoto ,  Makoto Uehara ,  Hajime Ichikawa ,  Shigeru Kato

Inventor： Masahiko Yomoto ,  Makoto Uehara ,  Hajime Ichikawa ,  Shigeru Kato

IPC: G01J5/00 ,  G01J5/62

CPC classification number: G01J5/0003 ,  G01J5/0007 ,  G01J5/08 ,  G01J5/0834 ,  G01J5/0846 ,  G01J5/0871 ,  G01J5/0896 ,  G01J2005/0051 ,  G01J2005/0074

Abstract: An apparatus and a method for detecting the temperature of a substrate, and for controlling the radiation-annealing of the substrate, for example, measures the intensity of infrared light from the substrate when the substrate is irradiated by measuring infrared light and also when the substrate is not irradiated by the infrared light. The temperature is calculated from the transmissivity and emissivity of the substrate, which are calculated from the intensity measurements.

Abstract translation: 用于检测基板的温度，并且用于控制基板的放射线退火的装置和方法，例如，当通过测量红外光照射基板时，测量来自基板的红外光的强度，以及当基板 不被红外线照射。 温度由基板的透射率和发射率计算，由强度测量计算。