Wafer holder and sample producing apparatus using it
    51.
    发明授权
    Wafer holder and sample producing apparatus using it 有权
    晶圆支架和使用它的样品生产设备

    公开(公告)号:US07573047B2

    公开(公告)日:2009-08-11

    申请号:US11712011

    申请日:2007-02-28

    申请人: Hiroyuki Suzuki

    发明人: Hiroyuki Suzuki

    IPC分类号: G21K5/08 G01N13/12

    摘要: A wafer holder includes: a frame-shaped holder main body which has an opening at its center and carries a wafer on its upper surface; guide members which contact the outer periphery of the wafer placed on the holder main body and position the wafer on the holder main body; and cross section sample holding members which are disposed on an outer circumference of the holder main body and holds a cross section sample produced from the wafer. Each of the cross section sample holding members includes plate-shaped sample stands to which the cross section sample is fixed, and fixing stands each of which is detachably attached to the holder main body and pinches the sample stand such that the sample stand is attachable to and detachable from the fixing stand.

    摘要翻译: 晶片保持器包括:框架保持器主体,其中心具有开口并在其上表面承载晶片; 引导构件,其与放置在保持器主体上的晶片的外周接触并将晶片定位在保持器主体上; 以及横截面样品保持构件,其设置在保持器主体的外周上并且保持从晶片产生的横截面样本。 每个横截面样品保持构件包括固定有横截面样本的板状样品台,以及固定架,每个固定架可拆卸地安装在保持器主体上,并夹住样品台,使得样品台可附接到 并可从固定台拆下。

    Method and apparatus of measuring thin film sample and method and apparatus of fabricating thin film sample
    52.
    发明授权
    Method and apparatus of measuring thin film sample and method and apparatus of fabricating thin film sample 有权
    测量薄膜样品的方法和装置以及制造薄膜样品的方法和装置

    公开(公告)号:US07518109B2

    公开(公告)日:2009-04-14

    申请号:US11824994

    申请日:2007-07-02

    IPC分类号: G01N23/225

    摘要: In a method of measuring a thin film sample of irradiating an electron beam to a thin film sample, detecting a generated secondary electron and measuring a film thickness of the thin film sample by utilizing the secondary electron, it is provided that the film thickness is measured accurately, in a short period of time and easily even when a current amount of the irradiated electron beam is varied. An electron beam 2b is irradiated, and a generated secondary electron 4 is detected by a secondary electron detector 6. A calculated value constituted by an amount of a secondary electron detected at a film thickness measuring region and an amount of a secondary electron detected at a reference region is calculated by first calculating means 11. A film thickness of the film thickness measuring region can be calculated from a calibration data of a standard thin film sample and the calculated value calculated by a sample 5.

    摘要翻译: 在测量向薄膜样品照射电子束的薄膜样品的测量方法中,通过利用二次电子来检测产生的二次电子和测量薄膜样品的膜厚度,但是测量膜厚度 准确地说,即使当照射的电子束的当前量变化时,也能够在短时间内容易地进行。 照射电子束2b,并且通过二次电子检测器6检测所产生的二次电子4.由膜厚测量区域检测到的二次电子量和在第二电子检测器检测到的二次电子量构成的计算值 通过第一计算装置11计算参考区域。可以从标准薄膜样品的校准数据和由样品5计算的计算值来计算膜厚测量区域的膜厚度。

    Scanning probe microscope
    53.
    发明授权
    Scanning probe microscope 失效
    扫描探针显微镜

    公开(公告)号:US07404313B2

    公开(公告)日:2008-07-29

    申请号:US11374842

    申请日:2006-03-14

    IPC分类号: G01B5/28 G01N13/16 G01N13/20

    CPC分类号: G01Q60/40 G01Q20/04 G01Q60/30

    摘要: A scanning probe microscope has a self-detection type probe structure including a cantilever having an electrically conductive probe at a distal end thereof, a supporting part, and a piezoresistance element whose resistance value changes depending on the deflection of the cantilever. A detector applies a predetermined voltage to the piezoresistance element and detects the value of the current passing through the piezoresistance element to detect deflection of the cantilever. A sample table mounts a sample such that a surface of the sample confronts a tip of the probe, and a moving mechanism relatively moves the sample table and the probe tip in X, Y and Z directions. A controller controls the moving mechanism to maintain a fixed distance between the probe tip and the sample surface and measures the surface shape of the sample on the basis of the detection result of the detector. A predetermined voltage is applied between the probe and the sample surface, and a measuring part operates simultaneously with the detector and measures electrical property information caused by the applied voltage.

    摘要翻译: 扫描探针显微镜具有自检型探针结构,其包括在其远端具有导电探针的悬臂,支撑部和耐电阻值根据悬臂的偏转而变化的压阻元件。 检测器将预定电压施加到压阻元件,并检测通过压阻元件的电流值,以检测悬臂的偏转。 样品台安装样品,使得样品的表面面对探针的尖端,并且移动机构使样品台和探针尖端在X,Y和Z方向上相对移动。 控制器控制移动机构以在探针尖端和样品表面之间保持固定的距离,并且基于检测器的检测结果测量样品的表面形状。 在探针和样品表面之间施加预定的电压,并且测量部分与检测器同时操作并测量由所施加的电压引起的电特性信息。

    Manipulator needle portion repairing method
    54.
    发明授权
    Manipulator needle portion repairing method 有权
    机械手针部修复方法

    公开(公告)号:US07356900B2

    公开(公告)日:2008-04-15

    申请号:US10973796

    申请日:2004-10-26

    申请人: Masanao Munekane

    发明人: Masanao Munekane

    IPC分类号: B23P6/00 B23P25/00 B23P13/00

    摘要: In a manipulator needle portion defect repairing method, the existence of an abrasion or a fracture in a needle portion for holding a sample at an end of a manipulator disposed in an FIB device is confirmed using a microscope function of the FIB device. The abrasion or the fracture in the needle portion is then repaired by chemical vapor deposition using a focused ion beam of the FIB device.

    摘要翻译: 在机械手针部缺陷修复方法中,使用FIB装置的显微镜功能来确认在设置在FIB装置中的机械手的端部处保持样品的针部的磨损或断裂的存在。 然后通过使用FIB装置的聚焦离子束的化学气相沉积来修复针部分中的磨损或断裂。

    Surface characteristic analysis apparatus
    55.
    发明授权
    Surface characteristic analysis apparatus 有权
    表面特性分析仪

    公开(公告)号:US07337656B2

    公开(公告)日:2008-03-04

    申请号:US11230904

    申请日:2005-09-20

    摘要: In order to establish processing techniques capable of making multi-tip probes with sub-micron intervals and provide such microscopic multi-tip probes, there is provided an outermost surface analysis apparatus for semiconductor devices etc. provided with a function for enabling positioning to be performed in such a manner that there is no influence on measurement in electrical measurements at an extremely small region using this microscopic multi-tip probe, and there are provided the steps of making a cantilever 1 formed with a plurality of electrodes 3 using lithographic techniques, and forming microscopic electrodes 6 minute in pitch by sputtering or gas-assisted etching a distal end of the cantilever 1 using a focused charged particle beam or using CVD.

    摘要翻译: 为了建立能够制造具有亚微米间隔的多尖端探针并提供这种微观多尖头探针的加工技术,提供了一种用于半导体器件等的最外表面分析装置,其具有使得能够进行定位的功能 使用这种显微多头探针在极小区域的电测量中对测量没有影响,并且提供了使用光刻技术制造形成有多个电极3的悬臂1的步骤,以及 通过溅射或使用聚焦的带电粒子束或使用CVD气化辅助蚀刻悬臂1的远端来形成6分钟的间距的微观电极。

    Fine-adjustment mechanism for scanning probe microscopy
    57.
    发明授权
    Fine-adjustment mechanism for scanning probe microscopy 有权
    扫描探针显微镜微调机构

    公开(公告)号:US07288762B2

    公开(公告)日:2007-10-30

    申请号:US11045916

    申请日:2005-01-28

    IPC分类号: H01L41/04

    CPC分类号: G01Q10/04 Y10S977/872

    摘要: The invention provides a fine-adjustment mechanism for a scanning probe microscopy with high rigidity and high degree of measurement accuracy wherein a strain gauge displacement sensor which can be installed in a small space is arranged so that temperature compensation is achieved. The fine-adjustment mechanism composed of a piezoelectric device is provided with at least two-piece electrode. One of the electrodes is configured as a dummy electrode, to which no voltage is applied, and the other electrode is configured as an active electrode which generates strain when voltage is applied. One or two resistors are provided on each of the active electrode and dummy electrode, and a bridge circuit is configured by the resistors.

    摘要翻译: 本发明提供了一种用于具有高刚性和高测量精度的扫描探针显微镜的精细调节机构,其中可以安装在小空间中的应变片位移传感器被布置成实现温度补偿。 由压电元件构成的微调机构具有至少两片电极。 其中一个电极被配置为没有施加电压的虚拟电极,另一个电极被配置为当施加电压时产生应变的有源电极。 有源电极和虚拟电极均设置有一个或两个电阻器,桥接电路由电阻器构成。

    Scanning probe microscope
    58.
    发明授权
    Scanning probe microscope 有权
    扫描探针显微镜

    公开(公告)号:US07284415B2

    公开(公告)日:2007-10-23

    申请号:US11076250

    申请日:2005-03-09

    IPC分类号: G01B5/28 G01N13/16

    CPC分类号: G01Q30/04 G01Q10/065

    摘要: A scanning probe microscope has a cantilever having a minute probe on a distal end thereof and a displacement detecting device for detecting displacement of the cantilever. A Z-axis controlling amount calculating mechanism calculates a controlling amount for keeping constant a displacement amount of the cantilever. A Z-axis driving mechanism drives in a Z direction the cantilever or a sample in accordance with the controlling amount from the Z-axis controlling amount calculating mechanism. An XY scanning mechanism relatively moves the probe in a direction of an XY plane with respect to the sample to measure an uneven shape and/or a physical characteristic of the surface of the sample. A controlling range limiting device limits a driving range of the Z-axis driving mechanism. A controlling range setting device optionally sets the driving range of the Z-axis driving mechanism.

    摘要翻译: 扫描探针显微镜具有在其远端具有微小探针的悬臂和用于检测悬臂的位移的位移检测装置。 Z轴控制量计算机构计算用于保持悬臂的位移量恒定的控制量。 Z轴驱动机构根据来自Z轴控制量计算机构的控制量沿Z方向驱动悬臂或样本。 XY扫描机构使探针相对于样品相对于XY平面的方向移动,以测量样品表面的不均匀形状和/或物理特性。 控制范围限制装置限制Z轴驱动机构的驱动范围。 控制范围设定装置可选地设定Z轴驱动机构的驱动范围。

    Method of manufacturing light-propagating probe for near-field microscope
    59.
    发明授权
    Method of manufacturing light-propagating probe for near-field microscope 有权
    制造近场显微镜的光传播探头的方法

    公开(公告)号:US07282157B2

    公开(公告)日:2007-10-16

    申请号:US10692345

    申请日:2003-10-23

    CPC分类号: G01Q60/22 G02B6/262

    摘要: A manufacturing method for a light propagating probe comprises a step of sharpening a light-propagating body having a sharpened section formed on an optical fiber, a step of forming the light-propagating body into a hook shape close to the sharpened section, a metal film coating step for forming a transparent opening section in a tip section, a step of protecting the transparent opening section with a resist material, a step of forming a reflecting surface for a light lever method, a step for metal film coating a spring operating part to the rear from the hook-shaped section, and a step of removing the resist material protecting the transparent opening section.

    摘要翻译: 光传播探针的制造方法包括对形成在光纤上的锐化部的光传播体进行磨削的步骤,将光传播体形成为靠近锐化部的钩状的步骤,金属膜 在前端部形成透明开口部的涂布工序,利用抗蚀剂材料保护透明开口部的工序,形成光杆法的反射面的工序,将弹簧工作部的金属膜涂敷到 从钩形部分的后部,以及去除保护透明开口部分的抗蚀剂材料的步骤。