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公开(公告)号：US20250089363A1
公开(公告)日：2025-03-13
申请号：US18289033
申请日：2023-06-29
Inventor： Zhifu LI , Guanghui LIU , Fei AI , Chengzhi LUO
IPC: H01L27/12 , H01L29/66 , H01L29/786
Abstract: The present disclosure provides semiconductor devices. A first active layer is disposed on a substrate. A first insulation layer covers the first active layer and is provided with a first via hole. A second active layer is disposed on the first insulation layer. A third active layer is disposed in the first via hole and connects the first active layer and the second active layer, so that a channel length of the semiconductor device is determined by a thickness of the first insulation layer, and a channel width of the semiconductor device is determined by a circumference of the first via hole.
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公开(公告)号：US20250087162A1
公开(公告)日：2025-03-13
申请号：US18248578
申请日：2023-03-29
Inventor： Mingyue LI , Chao TIAN , Yanqing GUAN , Fei AI , Guanghui LIU
IPC: G09G3/3266 , G09G3/32
Abstract: The present application provides a display panel and a display device, the display panel includes: N scan lines, the N is an integer greater than or equal to 1; and J sets of forward and reverse scan pull-down circuits, each set of the forward and reverse scan pull-down circuits includes N forward and reverse scan pull-down modules, at least a part of each of the forward and reverse scan pull-down modules is disposed in the display subarea, and the J is an integer greater than or equal to 1. In each set of the forward and reverse scan pull-down circuits, output terminals of the N forward and reverse scan pull-down modules are connected to the N scan lines in a one-to-one correspondence.
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公开(公告)号：US20240296767A1
公开(公告)日：2024-09-05
申请号：US17915517
申请日：2022-09-01
Inventor： Haiming CAO , Chao TIAN , Fei AI , Guanghui LIU
IPC: G09G3/20
CPC classification number: G09G3/20 , G09G2310/0251 , G09G2310/0267 , G09G2320/0223
Abstract: The present disclosure provides a display panel and a display device. The display panel includes a plurality of scan lines and at least one pull-down circuit unit.disposed at intervals ina n The pull-down circuit includes a forward scan pull-down unit and/or a reverse scan pull-down unit. The forward scan pull-down unit receives a (n+m)th scan signal, a first control signal, and a reference low level signal, and is connected to the nth scan line. The reverse scan pull-down unit receives a (n−m)th scan signal, a second control signal, and the reference low level signal, and is connected to the nth scan line.
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公开(公告)号：US20240234577A1
公开(公告)日：2024-07-11
申请号：US17926189
申请日：2022-11-11
Inventor： Zhifu LI , Guanghui LIU , Chao DAI , Fei AI , Dewei SONG , Chengzhi LUO
IPC: H01L29/786 , H01L29/417 , H01L29/423
CPC classification number: H01L29/78642 , H01L29/41733 , H01L29/41741 , H01L29/42392
Abstract: A semiconductor device and an electronic device are provided. A through hole is formed in an insulating layer and located on a first active layer. A thin-film transistor layer includes a third active layer. At least part of the third active layer is located on a sidewall of the through hole. One side of the third active layer is connected to a first active layer, and the other side of the third active layer is connected to a second active layer, so that a channel length is reduced, short channel effect is reduced, on-state current is increased, and power consumption is reduced.
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公开(公告)号：US20240233433A9
公开(公告)日：2024-07-11
申请号：US17769396
申请日：2022-03-10
Inventor： Fan GONG , Fei AI , Jiyue SONG , Dewei SONG
IPC: G06V40/13 , H01L27/12 , H01L31/0216
CPC classification number: G06V40/1318 , H01L27/124 , H01L31/02164
Abstract: A fingerprint collection device and a display panel are provided. The fingerprint collection device includes: a base substrate, a driving circuit layer, a first passivation layer, a photodiode, a second passivation layer, and an electrode layer. A first electrode portion is electrically connected to the photodiode through a second via. A second electrode portion is electrically connected to a first signal trace and a second signal trace through a third via and a fourth via to form a bridge structure. Since the third via, the fourth via, and the second via are formed in same process, one process can be saved.
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Patent Agency Ranking
公开(公告)号：US20240221564A1
公开(公告)日：2024-07-04
申请号：US17596876
申请日：2021-12-14
Inventor： Chao TIAN , Yanqing GUAN , Guanghui LIU , Fei AI
CPC classification number: G09G3/20 , H01L27/124 , G09G2310/0281
Abstract: The present application provides a display panel and an electronic device. The electronic device comprises the display panel. The display panel comprises a gate driving unit, a first auxiliary driving unit and scan lines. The first auxiliary driving unit rapidly pulls down the falling edge of the scan signal transmitted in the scan line to reduce the delay of the falling edge of the scan line. Thus, the number of gate driving units in the display panel can be reduced, thereby reducing the width of the frame of the display panel and the electronic device.
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公开(公告)号：US20240194684A1
公开(公告)日：2024-06-13
申请号：US17802166
申请日：2022-08-08
Inventor： Zhifu LI , Guanghui LIU , Fei AI , Dewei SONG
IPC: H01L27/12 , H01L29/786
CPC classification number: H01L27/1222 , H01L29/78633 , H01L29/78696
Abstract: A semiconductor device and an electronic device are provided. The semiconductor device includes an insulating substrate and a thin film transistor layer. The thin film transistor layer includes a first active layer and a first insulating layer disposed on the first active layer, and a convex portion is formed on the first insulating layer. The thin film transistor layer further includes a second active layer and a third active layer disposed on both sidewalls and an upper surface of the convex portion, one end of the first active layer is connected to the second active layer, and another end of the first active layer is connected to the third active layer.
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公开(公告)号：US20240135742A1
公开(公告)日：2024-04-25
申请号：US17769396
申请日：2022-03-10
Inventor： Fan GONG , Fei AI , Jiyue SONG , Dewei SONG
IPC: G06V40/13 , H01L27/12 , H01L31/0216
CPC classification number: G06V40/1318 , H01L27/124 , H01L31/02164
Abstract: A fingerprint collection device and a display panel are provided. The fingerprint collection device includes: a base substrate, a driving circuit layer, a first passivation layer, a photodiode, a second passivation layer, and an electrode layer. A first electrode portion is electrically connected to the photodiode through a second via. A second electrode portion is electrically connected to a first signal trace and a second signal trace through a third via and a fourth via to form a bridge structure. Since the third via, the fourth via, and the second via are formed in same process, one process can be saved.
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公开(公告)号：US20240096901A1
公开(公告)日：2024-03-21
申请号：US17973813
申请日：2022-10-26
IPC: H01L27/12
CPC classification number: H01L27/1218
Abstract: An array substrate and a display panel are provided. By allowing a gate electrode layer between a first active layer and a second active layer to overlap the first active layer and the second active layer at least partially, respectively, an area occupied by the first active layer, the second active layer, and the gate electrode layer can be reduced, and a design area of sub-pixels can be increased, thereby improving an aperture ratio.
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公开(公告)号：US20240038793A1
公开(公告)日：2024-02-01
申请号：US17278342
申请日：2020-12-31
Inventor： Fei AI , Fan GONG , Jiyue SONG , Dewei SONG , Shiyu LONG
IPC: H01L27/146
CPC classification number: H01L27/14612 , H01L27/14649 , H01L27/14683
Abstract: An array substrate and a manufacturing method thereof are provided. The array substrate includes a thin film transistor layer including a first thin film transistor and an infrared detection element disposed on a first side of the thin film transistor layer. The infrared detection element includes a first electrode, a light-absorbing layer, and a second electrode sequentially stacked, wherein the infrared detection element is electrically connected to the first thin film transistor, and wherein a material of the light-absorbing layer is microcrystalline silicon. A thickness and band gap of the microcrystalline silicon simultaneously fulfill a purpose of infrared detection.
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