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公开(公告)号:US10678148B2
公开(公告)日:2020-06-09
申请号:US16279237
申请日:2019-02-19
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Kai-Chieh Chang , Tsung-Hsun Lee , Ching-Juinn Huang , Li-Jui Chen , Po-Chung Cheng
Abstract: A lithography system is provided and includes a light source device configured to emit a processing light beam onto the semiconductor wafer, to generate a penetrating light beam and a reflected light beam. The lithography system further includes a detecting module having a first detector and a second detector. The first detector is configured to receive the penetrating light beam to generate first power data, and the second detector is configured to receive the reflected light beam to generate second power data. The lithography system also includes a monitoring device configured to calculate absorbed power data of the semiconductor wafer according to the first power data, the second power data and reference power data of a reference light beam and configured to compensate for a pattern formed on the semiconductor wafer resulting from the processing light beam according to the absorbed power data and reference information.
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公开(公告)号:US10670970B1
公开(公告)日:2020-06-02
申请号:US16257232
申请日:2019-01-25
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor: Wei-Shin Cheng , Hsin-Feng Chen , Cheng-Hao Lai , Shao-Hua Wang , Han-Lung Chang , Li-Jui Chen , Po-Chung Cheng
Abstract: A method includes providing a plurality of fuel droplets into an EUV source vessel by a fuel droplet generator, in which the fuel droplet generator has a first portion inside the EUV source vessel and a second portion outside the EUV source vessel; generating a plurality of output signals respectively from a plurality of oscillation sensors on the fuel droplet generator; determining whether the output signals are acceptable; and determining whether an unwanted oscillation originates from the first portion of the fuel droplet generator or the second portion of the fuel droplet generator when the output signals is determined as unacceptable.
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公开(公告)号:US20190289706A1
公开(公告)日:2019-09-19
申请号:US16429240
申请日:2019-06-03
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chun-Chia Hsu , Chieh Hsieh , Shang-Chieh Chien , Li-Jui Chen , Po-Chung Cheng , Tzung-Chi Fu , Bo-Tsun Liu
IPC: H05G2/00
Abstract: A method for extreme ultraviolet (EUV) lithography includes generating a target droplet, producing a target plume by heating the target droplet with a first laser pulse, directing first and second laser beams onto the target plume, and receiving the first and the second laser beams reflected by the target plume.
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公开(公告)号:US20190157828A1
公开(公告)日:2019-05-23
申请号:US16165022
申请日:2018-10-19
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chun-Lin Louis Chang , Henry Tong Yee-Shian , Alan Tu , Han-Lung Chang , Tzung-Chi Fu , Bo-Tsun Liu , Li-Jui Chen , Po-Chung Cheng
Abstract: The present disclosure provides a method for aligning a master oscillator power amplifier (MOPA) system. The method includes ramping up a pumping power input into a laser amplifier chain of the MOPA system until the pumping power input reaches an operational pumping power input level; adjusting a seed laser power output of a seed laser of the MOPA system until the seed laser power output is at a first level below an operational seed laser power output level; and performing a first optical alignment process to the MOPA system while the pumping power input is at the operational pumping power input level, the seed laser power output is at the first level, and the MOPA system reaches a steady operational thermal state.
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公开(公告)号:US20180317308A1
公开(公告)日:2018-11-01
申请号:US15946316
申请日:2018-04-05
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chun-Lin Louis Chang , Jen-Hao Yeh , Han-Lung Chang , Tzung-Chi Fu , Bo-Tsun Liu , Li-Jui Chen , Po-Chung Cheng
CPC classification number: H05G2/008 , G21K1/062 , H01S3/10038 , H01S3/10069 , H01S3/104 , H01S3/11 , H01S3/1305 , H01S3/134 , H01S3/2232 , H01S3/2316 , H01S3/2333 , H01S3/2383 , H05G2/005
Abstract: A laser system includes a laser source operable to provide a laser beam; a laser amplifier having an input port and an output port and operable to amplify the laser beam, the laser beam travelling along a main beam path through the laser amplifier from the input port to the output port; and a residual gain monitor operable to provide a probe laser beam, the probe laser beam travelling along a probe beam path through the laser amplifier from the output port to the input port, wherein the residual gain monitor calculates a residual gain of the laser amplifier according to the probe laser beam.
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公开(公告)号:US20180314144A1
公开(公告)日:2018-11-01
申请号:US15798937
申请日:2017-10-31
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chih-Tsung Shih , Shih-Chang Shih , Li-Jui Chen , Po-Chung Cheng
Abstract: A lithography mask includes a substrate that contains a low thermal expansion material (LTEM). The lithography mask also includes a reflective structure disposed over the substrate. The reflective structure includes a first layer and a second layer disposed over the first layer. At least the second layer is porous. The mask is formed by forming a multilayer reflective structure over the LTEM substrate, including forming a plurality of repeating film pairs, where each film pair includes a first layer and a porous second layer. A capping layer is formed over the multilayer reflective structure. An absorber layer is formed over the capping layer.
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公开(公告)号:US12124178B2
公开(公告)日:2024-10-22
申请号:US18310483
申请日:2023-05-01
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor: Hao-Yu Lan , Po-Chung Cheng , Ching-Juinn Huang , Tzung-Chi Fu , Tsung-Yen Lee
IPC: G03F9/00
CPC classification number: G03F9/7019
Abstract: A system is provided. The system includes an exposing device configured to generate a real-time image, including multiple first align marks, of a mask and an adjusting device configured to adjust an off-set of the mask from a pre-determined position to be smaller than a minimum aligning distance according to the first align marks and multiple align marks on a substrate, and further to move the mask closer to the pre-determined position to have a displacement, less than a minimum mapping distance, from the pre-determined position according to the real-time image and a reference image of the mask.
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公开(公告)号:US20240297476A1
公开(公告)日:2024-09-05
申请号:US18647199
申请日:2024-04-26
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chun-Lin Louis Chang , Henry Tong Yee Shian , Alan Tu , Han-Lung Chang , Tzung-Chi Fu , Bo-Tsun Liu , Li-Jui Chen , Po-Chung Cheng
IPC: H01S3/104 , H01S3/00 , H01S3/04 , H01S3/041 , H01S3/10 , H01S3/1123 , H01S3/223 , H01S3/23 , H05G2/00
CPC classification number: H01S3/104 , H01S3/1001 , H01S3/2316 , H05G2/008 , H01S3/005 , H01S3/0407 , H01S3/041 , H01S3/10038 , H01S3/10069 , H01S3/1123 , H01S3/2232
Abstract: The present disclosure provides a method for aligning a master oscillator power amplifier (MOPA) system. The method includes ramping up a pumping power input into a laser amplifier chain of the MOPA system until the pumping power input reaches an operational pumping power input level; adjusting a seed laser power output of a seed laser of the MOPA system until the seed laser power output is at a first level below an operational seed laser power output level; and performing a first optical alignment process to the MOPA system while the pumping power input is at the operational pumping power input level, the seed laser power output is at the first level, and the MOPA system reaches a steady operational thermal state.
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公开(公告)号:US11997778B2
公开(公告)日:2024-05-28
申请号:US18064156
申请日:2022-12-09
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor: Shih-Yu Tu , Han-Lung Chang , Hsiao-Lun Chang , Li-Jui Chen , Po-Chung Cheng
IPC: H05G2/00
Abstract: A method includes following steps. A photoresist-coated substrate is received to an extreme ultraviolet (EUV) tool. An EUV radiation is directed from a radiation source onto the photoresist-coated substrate, wherein the EUV radiation is generated by an excitation laser hitting a plurality of target droplets ejected from a first droplet generator. The first droplet generator is replaced with a second droplet generator at a temperature not lower than about 150° C.
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公开(公告)号:US20230359135A1
公开(公告)日:2023-11-09
申请号:US18356710
申请日:2023-07-21
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Hung-Chih Hsieh , Kai-Hsiung Chen , Po-Chung Cheng
IPC: G03F9/00 , H01L23/544 , G03F7/00
CPC classification number: G03F9/7076 , G03F9/7088 , H01L23/544 , G03F9/7084 , G03F7/70633 , H01L2223/54426
Abstract: Methods of fabricating and using an overlay mark are provided. In some embodiments, the overlay mark includes an upper layer and a lower layer disposed below the upper layer. The lower layer includes a first plurality of compound gratings extending in a first direction and disposed in a first region of the overlay mark, each of the first plurality of compound gratings including one first element and at least two second elements disposed on one side of the first element, and a second plurality of compound gratings extending the first direction and disposed in a second region of the overlay mark , each of the second plurality of compound gratings including one third element and at least two fourth elements on one side of the third element. The first plurality of compound gratings is a mirror image of the second plurality of compound gratings.
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