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51.
公开(公告)号:US20170286005A1
公开(公告)日:2017-10-05
申请号:US15162517
申请日:2016-05-23
Applicant: Samsung Electronics Co., Ltd.
Inventor: Frederic Sala , Chaohong Hu , Hongzhong Zheng , Dimin Niu , Mu-Tien Chang
CPC classification number: G06F12/0864 , G06F12/0223 , G06F2212/1016 , G06F2212/1044
Abstract: A method of deduplicating memory in a memory module includes identifying a hash table array including hash tables each corresponding to a hash function, and each including physical buckets, each physical bucket including ways and being configured to store data, identifying a plurality of virtual buckets each including some of the physical buckets, and each sharing at least one of the physical buckets with another of the virtual buckets, hashing a block of data according to a corresponding one of the hash functions to produce a hash value, determining whether an intended physical bucket has available space for the block of data according to the hash value, and determining whether a near-location physical bucket has available space for the block of data when the intended physical bucket does not have available space, the near-location physical bucket being in a same one of the virtual buckets as the intended physical bucket.
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公开(公告)号:US20170256311A1
公开(公告)日:2017-09-07
申请号:US15227911
申请日:2016-08-03
Applicant: Samsung Electronics Co., Ltd.
Inventor: Mu-Tien Chang , Dimin Niu , Hongzhong Zheng , Sun Young Lim , Indong Kim , Jangseok Choi
IPC: G11C13/00
CPC classification number: G11C8/08 , G11C7/1018 , G11C8/04 , G11C8/06 , G11C8/12 , G11C8/18 , G11C13/0026 , G11C13/0028 , G11C13/0069
Abstract: A method for addressing memory device data arranged in rows and columns indexed by a first number of row address bits and a second number of column address bits, and addressed by a row command specifying a third number of row address bits followed by a column command specifying a fourth number of column address bits, the first number being greater than the third number or the second number being greater than the fourth number, includes: splitting the first number of row address bits into first and second subsets, and specifying the first subset in the row command and the second subset in a next address command when the first number is greater than the third number; otherwise splitting the second number of column address bits into third and fourth subsets, and specifying the fourth subset in the column command and the third subset in a previous address command.
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公开(公告)号:US20170255398A1
公开(公告)日:2017-09-07
申请号:US15174761
申请日:2016-06-06
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Dimin Niu , Mu-Tien Chang , Hongzhong Zheng , Benjamin Lim , Indong Kim
IPC: G06F3/06
CPC classification number: G06F3/0613 , G06F3/0632 , G06F3/0647 , G06F3/0656 , G06F3/0659 , G06F3/068 , G06F3/0685
Abstract: A hybrid memory controller performs receiving first and second central processing unit (CPU) requests to write to/read from a hybrid memory group, identifying a volatile memory device and a non-volatile memory device as a first target and second target of the first and second CPU requests, respectively, by decoding and address mapping of the first and second CPU requests, queuing the first and second CPU requests in first and second buffers, respectively, generating, based on an arbitration policy, a first command corresponding to one of the first and second CPU requests to an associated one of the first and second targets, and generating a second command corresponding to another one of the first and second CPU requests to an associated another one of the first and second targets, and transmitting the first and second commands to respective ones of the volatile and non-volatile memory devices.
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公开(公告)号:US20170255390A1
公开(公告)日:2017-09-07
申请号:US15143248
申请日:2016-04-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Mu-Tien Chang , Prasun Gera , Dimin Niu , Hongzhong Zheng
CPC classification number: G06F3/0605 , G06F3/0611 , G06F3/0625 , G06F3/0635 , G06F3/0659 , G06F3/0673 , G06F9/30196 , G06F15/785 , Y02D10/13
Abstract: A 3D-stacked memory device including: a base die including a plurality of switches to direct data flow and a plurality of arithmetic logic units (ALUs) to compute data; a plurality of memory dies stacked on the base die; and an interface to transfer signals to control the base die.
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公开(公告)号:US12248402B2
公开(公告)日:2025-03-11
申请号:US18070328
申请日:2022-11-28
Applicant: Samsung Electronics Co., Ltd.
Inventor: Krishna T. Malladi , Mu-Tien Chang , Dimin Niu , Hongzhong Zheng
IPC: G06F12/0879 , G11C11/417
Abstract: A high bandwidth memory system. In some embodiments, the system includes: a memory stack having a plurality of memory dies and eight 128-bit channels; and a logic die, the memory dies being stacked on, and connected to, the logic die; wherein the logic die may be configured to operate a first channel of the 128-bit channels in: a first mode, in which a first 64 bits operate in pseudo-channel mode, and a second 64 bits operate as two 32-bit fine-grain channels, or a second mode, in which the first 64 bits operate as two 32-bit fine-grain channels, and the second 64 bits operate as two 32-bit fine-grain channels.
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公开(公告)号:US12197726B2
公开(公告)日:2025-01-14
申请号:US18369079
申请日:2023-09-15
Applicant: Samsung Electronics Co., Ltd.
Inventor: Mu-Tien Chang , Prasun Gera , Dimin Niu , Hongzhong Zheng
Abstract: A 3D-stacked memory device including: a base die including a plurality of switches to direct data flow and a plurality of arithmetic logic units (ALUs) to compute data; a plurality of memory dies stacked on the base die; and an interface to transfer signals to control the base die.
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公开(公告)号:US12189546B2
公开(公告)日:2025-01-07
申请号:US17872987
申请日:2022-07-25
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Dimin Niu , Mu-Tien Chang , Hongzhong Zheng , Sun Young Lim , Indong Kim , Jangseok Choi , Craig Hanson
Abstract: A memory module that includes a non-volatile memory and an asynchronous memory interface to interface with a memory controller is presented. The asynchronous memory interface may use repurposed pins of a double data rate (DDR) memory channel to send an asynchronous data to the memory controller. The asynchronous data may be device feedback indicating a status of the non-volatile memory.
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公开(公告)号:US12147360B2
公开(公告)日:2024-11-19
申请号:US17872987
申请日:2022-07-25
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Dimin Niu , Mu-Tien Chang , Hongzhong Zheng , Sun Young Lim , Indong Kim , Jangseok Choi , Craig Hanson
Abstract: A memory module that includes a non-volatile memory and an asynchronous memory interface to interface with a memory controller is presented. The asynchronous memory interface may use repurposed pins of a double data rate (DDR) memory channel to send an asynchronous data to the memory controller. The asynchronous data may be device feedback indicating a status of the non-volatile memory.
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公开(公告)号:US20240004547A1
公开(公告)日:2024-01-04
申请号:US18369079
申请日:2023-09-15
Applicant: Samsung Electronics Co., Ltd.
Inventor: Mu-Tien Chang , Prasun Gera , Dimin Niu , Hongzhong Zheng
CPC classification number: G06F3/0605 , G06F15/785 , G06F3/0611 , G06F3/0625 , G06F3/0635 , G06F3/0659 , G06F3/0673 , G06F9/30196 , Y02D10/00
Abstract: A 3D-stacked memory device including: a base die including a plurality of switches to direct data flow and a plurality of arithmetic logic units (ALUs) to compute data; a plurality of memory dies stacked on the base die; and an interface to transfer signals to control the base die.
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公开(公告)号:US11789610B2
公开(公告)日:2023-10-17
申请号:US17353393
申请日:2021-06-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Mu-Tien Chang , Prasun Gera , Dimin Niu , Hongzhong Zheng
CPC classification number: G06F3/0605 , G06F3/0611 , G06F3/0625 , G06F3/0635 , G06F3/0659 , G06F3/0673 , G06F9/30196 , G06F15/785 , Y02D10/00
Abstract: A 3D-stacked memory device including: a base die including a plurality of switches to direct data flow and a plurality of arithmetic logic units (ALUs) to compute data; a plurality of memory dies stacked on the base die; and an interface to transfer signals to control the base die.
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