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    IMAGE SENSOR AND ELECTRONIC DEVICE INCLUDING THE SAME
    52.
    发明申请
    IMAGE SENSOR AND ELECTRONIC DEVICE INCLUDING THE SAME 有权
    图像传感器和电子设备，包括它们

    公开(公告)号：US20160087012A1

    公开(公告)日：2016-03-24

    申请号：US14657133

    申请日：2015-03-13

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Gae Hwang LEE ,  Kwang Hee LEE ,  Dong-Seok LEEM ,  Yong Wan JIN

    IPC: H01L27/30 ,  H01L51/44

    CPC classification number: H01L27/307 ,  H01L51/442 ,  H01L2251/305 ,  H01L2251/306 ,  H01L2251/308 ,  Y02E10/549

    Abstract: An image sensor includes a semiconductor substrate integrated with at least a photo-sensing device, a plurality of first electrodes disposed on the semiconductor substrate, an organic photoelectric conversion layer disposed on the first electrodes, and a second electrode disposed on the organic photoelectric conversion layer. The first electrodes include a light-transmitting electrode and a metal layer interposed between the semiconductor substrate and the light-transmitting electrode. The organic photoelectric conversion layer disposed on the first electrodes and the photo-sensing device absorb and/or sense light in different wavelength regions from each other. An electronic device including the image sensor is also provided.

    Abstract translation: 图像传感器包括与至少一个感光装置集成的半导体衬底，设置在半导体衬底上的多个第一电极，设置在第一电极上的有机光电转换层和设置在有机光电转换层上的第二电极 。 第一电极包括透光电极和介于半导体衬底和透光电极之间的金属层。 设置在第一电极和感光装置上的有机光电转换层吸收和/或感测不同波长区域中的光。 还提供了包括图像传感器的电子设备。

    ORGANIC PHOTOELECTRONIC DEVICE AND IMAGE SENSOR
    55.
    发明申请
    ORGANIC PHOTOELECTRONIC DEVICE AND IMAGE SENSOR 有权
    有机光电器件和图像传感器

    公开(公告)号：US20150287946A1

    公开(公告)日：2015-10-08

    申请号：US14532367

    申请日：2014-11-04

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Dong-Seok LEEM ,  Kwang Hee LEE ,  Gae Hwang LEE ,  Yong Wan JIN

    IPC: H01L51/44 ,  H01L51/00 ,  H01L27/30

    CPC classification number: H01L51/447 ,  C07F5/02 ,  C07F5/022 ,  C09B47/00 ,  C09B47/04 ,  H01L27/307 ,  H01L51/0052 ,  H01L51/0078 ,  H01L51/008 ,  H01L51/4246 ,  H01L51/4253 ,  H01L51/5004 ,  H01L51/5012 ,  H01L2251/552

    Abstract: An organic photoelectronic device includes an anode and a cathode facing each other, and an organic layer between the anode and the cathode, the organic layer including a compound represented by Chemical Formula 1 as a visible light-absorbing body, and at least one of a hole buffer material having an energy bandgap of greater than or equal to about 2.8 eV and a HOMO level between a work function of the anode and a HOMO level of the compound represented by the Chemical Formula 1, and an electron buffer material having an energy bandgap of greater than or equal to about 2.8 eV and a LUMO level between a work function of the cathode and a LUMO level of the compound represented by the Chemical Formula 1.

    Abstract translation: 有机光电子器件包括彼此相对的阳极和阴极以及阳极和阴极之间的有机层，有机层包括由化学式1表示的化合物作为可见光吸收体，以及至少一种 具有大于或等于约2.8eV的能带隙的空穴缓冲材料和阳极的功函数与由化学式1表示的化合物的HOMO能级之间的HOMO能级，以及具有能带隙的电子缓冲材料 大于或等于约2.8eV，并且阴极的功函数和由化学式1表示的化合物的LUMO能级之间的LUMO能级。

    SENSOR AND ELECTRONIC DEVICE
    59.
    发明申请
    SENSOR AND ELECTRONIC DEVICE 有权

    公开(公告)号：US20220131098A1

    公开(公告)日：2022-04-28

    申请号：US17509451

    申请日：2021-10-25

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Dong-Seok LEEM ,  Rae Sung KIM ,  Ohkyu KWON ,  Changki KIM ,  Insun PARK

    IPC: H01L51/42 ,  H01L51/44 ,  H01L51/00

    Abstract: A sensor includes first and second electrodes, and an infrared photoelectric conversion layer between the first and second electrodes, the infrared photoelectric conversion layer being configured to absorb light in at least a portion of an infrared wavelength spectrum and convert the absorbed light to an electrical signal. The infrared photoelectric conversion layer includes a first material having a maximum absorption wavelength in an infrared wavelength spectrum, a second material forming a pn junction with the first material, and a third material having an energy band gap greater than the energy band gap of the first material by greater than or equal to about 1.0 eV. The first material, the second material, and the third material are different from each other, and each of the first material, the second material, and the third material is a non-polymeric material.

    SENSORS AND ELECTRONIC DEVICES
    60.
    发明申请
    SENSORS AND ELECTRONIC DEVICES 有权

    公开(公告)号：US20210343891A1

    公开(公告)日：2021-11-04

    申请号：US17236439

    申请日：2021-04-21

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Dong-Seok LEEM ,  Rae Sung KIM ,  In Sun PARK ,  Ohkyu KWON ,  Changki KIM

    IPC: H01L31/101 ,  H01L31/0232

    Abstract: A sensor includes a first electrode, a second electrode facing the first electrode, and a light absorbing layer between the first electrode and the second electrode. The light absorbing layer may have a first absorption spectrum having a first absorption peak in a first infrared wavelength region and a second absorption peak in a second infrared wavelength region, the second infrared wavelength region being a longer wavelength region than the first infrared wavelength region. The second absorption spectrum does not at least partially overlap with the first absorption spectrum. The second absorption spectrum may have a lower absorption intensity than the first absorption spectrum. An external quantum efficiency (EQE) spectrum that is amplified in the second infrared wavelength region is exhibited in the sensor.

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