公开(公告)号：US06218701B1

公开(公告)日：2001-04-17

申请号：US09303270

申请日：1999-04-30

Applicant: Dexter Elson Semple ,  Jun Zeng

Inventor： Dexter Elson Semple ,  Jun Zeng

IPC: H01L2976

CPC classification number: H01L29/7813 ,  H01L29/0657 ,  H01L29/4232 ,  H01L29/4238

Abstract: A power MOS device that has increased channel width comprises a semiconductor substrate and a doped upper layer of a first conduction type disposed on the substrate. The upper layer comprises a plurality of doped well regions of a second, opposite conduction type and a plurality of heavily doped source regions of the first conduction type at an etched upper surface of the upper layer that comprises parallel corrugations disposed transversely to the source regions. A gate that separates one source region from another comprises an insulating layer and a conductive material. The corrugations provide an increase in width of a channel underlying the gate and the well and source regions. In a process for forming a power MOS device with increased channel width on a semiconductor substrate having a doped upper layer of a first conduction type, a stripe mask is formed on an upper surface of the upper layer, and the upper surface is selectively etched to form a corrugated surface comprising a plurality of parallel corrugations. Following removal of the stripe mask, an insulating layer is formed on the corrugated surface, and an overlying conductive layer is formed on the insulating layer, the insulating and conductive layers comprising a corrugated gate region disposed transversely to the parallel corrugations of the upper surface. A dopant of a second, opposite conduction type is implanted to form a doped well region in the upper layer, and a dopant of the first conduction type is implanted into a portion of the corrugated surface adjacent to the gate, thereby forming a heavily doped source region in the upper layer. In an alternative procedure for forming a gate, a gate trench having a floor comprising parallel corrugations that substantially correspond to the corrugations in the upper surface is etched into the upper layer. Following lining of the trench floor and sidewalls with an insulating layer, the trench is substantially filled with a conductive material to form a gate trench. A dopant of the first conduction type is implanted into a portion of the corrugated surface adjacent to the gate region, thereby forming a heavily doped source region in the upper layer.

公开(公告)号：US09355339B2

公开(公告)日：2016-05-31

申请号：US14126661

申请日：2011-08-26

Applicant: Giordano B. Beretta ,  Eric Hoarau ,  I-Jong Lin ,  Jun Zeng

Inventor： Giordano B. Beretta ,  Eric Hoarau ,  I-Jong Lin ,  Jun Zeng

IPC: G06K15/02 ,  H04N1/60 ,  H04N1/62 ,  G06F3/12

CPC classification number: G06K15/027 ,  G06F3/1208 ,  H04N1/6033 ,  H04N1/622

Abstract: Systems and methods for color reproduction tolerances are provided. One method according to the present disclosure may involve selecting a printing configuration, printing a color scale sample using the printing configuration, and scoring the printed color scale sample based at least in part on an extent to which transpositions of the color swatches occur over a color range. When the score of the printed color scale sample indicates a print quality is or will be above a threshold level of quality, a print job using colors of the color range may be printed using the printing configuration.

Abstract translation: 提供了用于色彩再现公差的系统和方法。 根据本公开的一种方法可以包括：选择打印配置，使用打印配置打印色标样本，以及至少部分地基于颜色的色调发生在颜色上的程度来评分打印的色标样本 范围。 当打印的色标示例的分数表示打印质量是或将高于阈值质量水平时，可以使用打印配置打印使用颜色范围的颜色的打印作业。

公开(公告)号：US09007626B2

公开(公告)日：2015-04-14

申请号：US13450998

申请日：2012-04-19

Applicant: Eric Hoarau ,  Jun Zeng ,  Scott Clearwater

Inventor： Eric Hoarau ,  Jun Zeng ,  Scott Clearwater

IPC: G06K15/00 ,  G06Q10/06

CPC classification number: G06Q10/06

Abstract: A non-transitory, computer-readable medium has embedded therein instructions executable by a processor. The instructions simulate an operation of a print service provider (PSP) using a model of a printing system with a set of operation parameters for performing the PSP operation. The instructions determine a monitoring strategy based on the simulated PSP operation. The monitoring strategy is for monitoring the PSP operation when performed in the printing system.

Abstract translation: 非暂时性的计算机可读介质嵌入其中可由处理器执行的指令。 该指令使用具有用于执行PSP操作的一组操作参数的打印系统的模型来模拟打印服务提供商（PSP）的操作。 该指令决定了基于模拟PSP操作的监控策略。 监控策略用于在打印系统中执行时监视PSP操作。

公开(公告)号：US08680607B2

公开(公告)日：2014-03-25

申请号：US13525908

申请日：2012-06-18

Applicant: Jun Zeng ,  Mohamed N. Darwish

Inventor： Jun Zeng ,  Mohamed N. Darwish

IPC: H01L29/78

CPC classification number: H01L29/7813 ,  H01L29/0623 ,  H01L29/063 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/404 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/66719 ,  H01L29/66727 ,  H01L29/66734

Abstract: Power devices, and related process, where both gate and field plate trenches have multiple stepped widths, using self-aligned process steps.

Abstract translation: 功率器件和相关工艺，其中栅极和场板沟槽都具有多个阶梯宽度，采用自对准工艺步骤。

公开(公告)号：US08573747B2

公开(公告)日：2013-11-05

申请号：US13119601

申请日：2008-10-31

Applicant: Adel Jilani ,  Jun Zeng ,  Kenneth James Faase ,  Tony S. Cruz-Uribe ,  Michael G. Monroe

Inventor： Adel Jilani ,  Jun Zeng ,  Kenneth James Faase ,  Tony S. Cruz-Uribe ,  Michael G. Monroe

IPC: B41J2/04

CPC classification number: B41J2/14314

Abstract: An electrostatic liquid-ejection actuation mechanism includes a membrane, a frame, and one or more deformable beams. The frame has two sides and a number of cross members that are non-parallel to the two sides. The two sides and the cross members define one or more areas individually corresponding to one or more liquid chambers. The deformable beams are disposed between the membrane and the frame. The deformable beams individually correspond to the liquid chambers, and define a number of slits. Each slit is adjacent to one of the two sides of the frame. The deformable beams have a width that is less than a width of the liquid chambers, due at least to the slits.

Abstract translation: 静电液体喷射致动机构包括膜，框架和一个或多个可变形梁。 框架具有两侧和与两侧不平行的多个横向构件。 两侧和横向构件限定一个或多个单独对应于一个或多个液体室的区域。 可变形梁设置在膜和框架之间。 可变形梁单独对应于液体室，并且限定许多狭缝。 每个狭缝与框架的两侧之一相邻。 至少对于狭缝，可变形梁的宽度小于液体室的宽度。

公开(公告)号：US20120320407A1

公开(公告)日：2012-12-20

申请号：US13160313

申请日：2011-06-14

Applicant: Eric Hoarau ,  Jun Zeng ,  Giordano B. Beretta ,  I-Jong Lin

Inventor： Eric Hoarau ,  Jun Zeng ,  Giordano B. Beretta ,  I-Jong Lin

IPC: G06K15/00

CPC classification number: G06F3/1275 ,  G06F3/1211 ,  G06F3/1264 ,  G06F3/1282 ,  G06F3/1292 ,  G06Q10/00

Abstract: Devices and methods for tracking a print job using an assignable electronic device on a print service provider (PSP) production floor are provided. One such method includes scanning a barcode-enabled job ticket assigned to a print job using a mobile electronic device assigned to a location on a print service provider production floor and sending barcode data from the barcode-enabled job ticket from to a PSP controller. The mobile electronic device may receive workflow instructions associated with the print job from the PSP controller. In addition, the mobile electronic device may display a representation of the workflow instructions.

Abstract translation: 提供了使用打印服务提供商（PSP）生产层上的可分配电子设备跟踪打印作业的设备和方法。 一种这样的方法包括使用分配给打印服务提供商生产层上的位置的移动电子设备扫描分配给打印作业的条形码启用的作业单，并将条形码数据从启用条形码的作业传票发送到PSP控制器。 移动电子设备可以从PSP控制器接收与打印作业相关联的工作流指令。 此外，移动电子设备可以显示工作流指令的表示。

公开(公告)号：US20120276003A1

公开(公告)日：2012-11-01

申请号：US13244507

申请日：2011-09-25

Applicant: Jun Zeng ,  Qiyin Sun

Inventor： Jun Zeng ,  Qiyin Sun

IPC: A61K51/00 ,  C01B13/00 ,  G21G1/00

CPC classification number: G21G1/06 ,  G21G1/10 ,  G21G1/12 ,  G21H5/02

Abstract: The present disclosure relates to a compound comprising an oxygen-15 and a process for preparation thereof. It also relates to the use of the compound in positron and/or other nuclide imaging and use of the compound in obtaining a perfusion and/or metabolic image in an animal and/or human body. A process for preparing the compound comprises irradiating a compound comprising oxygen via irradiation energy in the range of 10 MeV to 430 MeV. The oxygen atom in the compound may then be allowed to be converted to an oxygen-15 positron nuclide through a photonuclear reaction. Provided that the molecular structure of the irradiated compound is not disrupted, a compound comprising an oxygen-15 is prepared.

Abstract translation: 本公开涉及包含氧-15的化合物及其制备方法。 它还涉及化合物在正电子和/或其他核素成像中的用途以及化合物在动物和/或人体中获得灌注和/或代谢图像中的用途。 制备该化合物的方法包括通过10MeV至430MeV范围内的照射能量照射包含氧的化合物。 然后可以通过光子核反应将化合物中的氧原子转化成氧-15正电子核素。 如果照射的化合物的分子结构不被破坏，则制备包含氧-15的化合物。

公开(公告)号：US20120187473A1

公开(公告)日：2012-07-26

申请号：US13085317

申请日：2011-04-12

Applicant: Jun Zeng ,  Mohamed N. Darwish ,  Shih-Tzung Su

Inventor： Jun Zeng ,  Mohamed N. Darwish ,  Shih-Tzung Su

IPC: H01L29/78 ,  H01L29/02

CPC classification number: H01L29/7811 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/0661 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/404 ,  H01L29/407 ,  H01L29/41741 ,  H01L29/4238

Abstract: A MOSFET switch which has a low surface electric field at an edge termination area, and also has increased breakdown voltage. The MOSFET switch has a new edge termination structure employing an N-P-N sandwich structure. The MOSFET switch also has a polysilicon field plate configuration operative to enhance any spreading of any depletion layer located at an edge of a main PN junction of the N-P-N sandwich structure.

Abstract translation: MOSFET开关，其在边缘终端区域具有低表面电场，并且还具有增加的击穿电压。 MOSFET开关具有采用N-P-N夹层结构的新边缘端接结构。 MOSFET开关还具有可操作地增强位于N-P-N夹层结构的主PN结的边缘处的任何耗尽层的任何扩展的多晶硅场板结构。

公开(公告)号：US07923804B2

公开(公告)日：2011-04-12

申请号：US12367716

申请日：2009-02-09

Applicant: Jun Zeng ,  Mohamed N. Darwish ,  Shih-Tzung Su

Inventor： Jun Zeng ,  Mohamed N. Darwish ,  Shih-Tzung Su

IPC: H01L27/095 ,  H01L29/47 ,  H01L29/812 ,  H01L31/07 ,  H01L31/108

CPC classification number: H01L29/7811 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/0661 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/404 ,  H01L29/407 ,  H01L29/41741 ,  H01L29/4238

Abstract: A MOSFET switch which has a low surface electric field at an edge termination area, and also has increased breakdown voltage. The MOSFET switch has a new edge termination structure employing an N-P-N sandwich structure. The MOSFET switch also has a polysilicon field plate configuration operative to enhance any spreading of any depletion layer located at an edge of a main PN junction of the N-P-N sandwich structure.

Abstract translation: MOSFET开关，其在边缘终端区域具有低表面电场，并且还具有增加的击穿电压。 MOSFET开关具有采用N-P-N夹层结构的新边缘端接结构。 MOSFET开关还具有可操作地增强位于N-P-N夹层结构的主PN结的边缘处的任何耗尽层的任何扩展的多晶硅场板结构。

公开(公告)号：US20100214016A1

公开(公告)日：2010-08-26

申请号：US12391450

申请日：2009-02-24

Applicant: Richard A. Blanchard ,  Jun Zeng

Inventor： Richard A. Blanchard ,  Jun Zeng

IPC: H03F3/16 ,  H01L29/78

CPC classification number: H01L29/7813 ,  H01L21/2257 ,  H01L29/086 ,  H01L29/407 ,  H01L29/408 ,  H01L29/41766 ,  H01L29/42356 ,  H01L29/4236 ,  H01L29/456 ,  H01L29/4933 ,  H01L29/66734

Abstract: A vertical-current-flow device includes a trench which includes an insulated gate and which extends down into first-conductivity-type semiconductor material. A phosphosilicate glass layer is positioned above the insulated gate and a polysilicon layer is positioned above the polysilicate glass layer. Source and body diffusions of opposite conductivity types are positioned adjacent to a sidewall of the trench. A drift region is positioned to receive majority carriers which have been injected by the source, and which have passed through the body diffusion. A drain region is positioned to receive majority carriers which have passed through the drift region. The gate is capacitively coupled to control inversion of a portion of the body region. As an alternative, a dielectric layer may be used in place of the doped glass where permanent charge is positioned in the dielectric layer.

Abstract translation: 垂直电流装置包括沟槽，该沟槽包括绝缘栅极并向下延伸到第一导电型半导体材料中。 磷硅酸盐玻璃层位于绝缘栅极之上，多晶硅层位于聚硅酸盐玻璃层之上。 相反导电类型的源极和体扩散定位成与沟槽的侧壁相邻。 漂移区域被定位成接收已经被源注入并已经通过身体扩散的多数载体。 漏极区域被定位成接收已经通过漂移区域的多数载流子。 栅极电容耦合以控制身体区域的一部分的反转。 作为替代，可以使用电介质层代替在电介质层中定位永久电荷的掺杂玻璃。