公开(公告)号：US20070025354A1

公开(公告)日：2007-02-01

申请号：US11379264

申请日：2006-04-19

申请人： Christopher Pettey ,  Richard Pekkala ,  Asif Khan ,  Annette Pagan ,  Robert Utley

发明人： Christopher Pettey ,  Richard Pekkala ,  Asif Khan ,  Annette Pagan ,  Robert Utley

IPC分类号： H04L12/56

CPC分类号： G06F13/12

摘要： An apparatus and method is provided for allowing I/O devices to be shared and/or partitioned among a plurality of processing complexes within the load/store fabric of each of the processing complexes without requiring modification to the operating system or driver software of the processing complexes. The apparatus and method includes a switch for selectively coupling each of the processing complexes to one or more shared I/O devices. The apparatus and method further includes placing information within packets transmitted between the switch and the I/O devices to identify which of the processing complexes the packets are associated with. The invention further includes an apparatus and method within the shared I/O devices to allow the shared I/O devices to service each of the processing complexes independently.

公开(公告)号：US20060018342A1

公开(公告)日：2006-01-26

申请号：US11235514

申请日：2005-09-26

申请人： Christopher Pettey ,  Asif Khan ,  Annette Pagan ,  Richard Pekkala ,  Robert Utley

发明人： Christopher Pettey ,  Asif Khan ,  Annette Pagan ,  Richard Pekkala ,  Robert Utley

IPC分类号： H04J3/22

CPC分类号： H04L67/24 ,  H04L49/351 ,  H04L49/356

摘要： An apparatus and method is provided for allowing I/O devices to be shared and/or partitioned among a plurality of processing complexes within the load/store fabric of each of the processing complexes without requiring modification to the operating system or driver software of the processing complexes. The apparatus and method includes a switch for selectively coupling each of the processing complexes to one or more shared I/O devices. The apparatus and method further includes placing information within packets transmitted between the switch and the I/O devices to identify which of the processing complexes the packets are associated with. The invention further includes an apparatus and method within the shared I/O devices to allow the shared I/O devices to service each of the processing complexes independently.

公开(公告)号：US20050249231A1

公开(公告)日：2005-11-10

申请号：US10998068

申请日：2004-11-24

申请人： Asif Khan

发明人： Asif Khan

IPC分类号： H04L1/00 ,  H04L1/16 ,  H04L1/18 ,  H04L12/26 ,  H04N5/00

CPC分类号： H04N21/434 ,  H04L1/1628 ,  H04L1/1678 ,  H04L1/1685 ,  H04L1/1854 ,  H04L2001/0093

摘要： Embodiments of the invention are directed to methods and systems for providing efficient, scalable and reliable transport of large media files to multiple receivers over digital video broadcast (DVB) standards-based broadcast networks. Transport Reliability is achieved using Forward Error Correction (FEC) and a selective, Negative Acknowledgement (NACK) mechanism over an IP-based unicast feedback path. Out-of-band command and control messages over DVB network are used for initiation and coordination between sender and receivers.

摘要翻译： 本发明的实施例涉及用于通过基于数字视频广播（DVB）标准的广播网络提供高质量，可扩展和可靠的大媒体文件传输到多个接收机的方法和系统。 通过基于IP的单播反馈路径的前向纠错（FEC）和选择性，否定确认（NACK）机制实现传输可靠性。 通过DVB网络的带外命令和控制消息用于发送方和接收方之间的启动和协调。

公开(公告)号：US20050111461A1

公开(公告)日：2005-05-26

申请号：US10722933

申请日：2003-11-26

申请人： Asif Khan ,  David Kramer ,  David Sonnier

发明人： Asif Khan ,  David Kramer ,  David Sonnier

IPC分类号： H04L12/56

CPC分类号： H04L47/2441 ,  H04L47/22 ,  H04L47/50 ,  H04L47/522 ,  H04L47/568 ,  H04L47/58 ,  H04L2012/5679

摘要： A processor includes a scheduler operative to schedule data blocks for transmission from a plurality of queues or other transmission elements, utilizing at least a first table and a second table. The first table may comprise at least first and second first-in first-out (FIFO) lists of entries corresponding to transmission elements for which data blocks are to be scheduled in accordance with a first scheduling algorithm, such as a weighted fair queuing scheduling algorithm. The scheduler maintains a first table pointer identifying at least one of the first and second lists of the first table as having priority over the other of the first and second lists of the first table. The second table includes a plurality of entries corresponding to transmission elements for which data blocks are to be scheduled in accordance with a second scheduling algorithm, such as a constant bit rate or variable bit rate scheduling algorithm. Association of a given one of the transmission elements with a particular one of the second table entries establishes a scheduling rate for that transmission element. The scheduler maintains a second table pointer identifying a current one of the second table entries that is eligible for transmission.

摘要翻译： 处理器包括调度器，其利用至少第一表和第二表来调度用于从多个队列或其他传输元件传输的数据块。 第一表可以包括对应于根据第一调度算法（例如加权公平排队调度算法）对数据块进行调度的传输元件的条目的至少第一和第二先进先出（FIFO）列表 。 调度器维护第一表指针，其将第一表的第一列表和第二列表中的至少一个列表标识为优先于第一表的第一和第二列表中的另一列。 第二表包括对应于根据诸如恒定比特率或可变比特率调度算法的第二调度算法对其数据块进行调度的传输元件的多个条目。 给定一个传输单元与特定的一个第二表项的关联建立该传输单元的调度速率。 调度器维护第二表指针，其标识有资格传输的第二表条目中的当前一个。

公开(公告)号：US20050102437A1

公开(公告)日：2005-05-12

申请号：US10972669

申请日：2004-10-25

申请人： Christopher Pettey ,  Asif Khan ,  Annette Pagan ,  Richard Pekkala ,  Robert Utley

发明人： Christopher Pettey ,  Asif Khan ,  Annette Pagan ,  Richard Pekkala ,  Robert Utley

IPC分类号： G06F3/00

CPC分类号： G06F13/4022

摘要： An apparatus and method are provided that enable I/O devices to be shared among multiple operating system domains. The apparatus has a first plurality of I/O ports, a second I/O port, and link training logic. The first plurality of I/O ports is coupled to a plurality of operating system domains through a load-store fabric. Each of the first plurality of I/O ports is configured to route transactions between the plurality of operating system domains and the switching apparatus. The second I/O port is coupled to a first shared input/output endpoint. The first shared input/output endpoint is configured to request/complete the transactions for each of the plurality of operating system domains. The link training logic is coupled to the second I/O port. The link training logic initializes a link between the second I/O port and the first shared input/output endpoint to support the transactions corresponding to the each of the plurality of operating system domains. The link is initialized in a manner that is transparent to the plurality of operating system domains.

摘要翻译： 提供了一种能够在多个操作系统域之间共享I / O设备的装置和方法。 该装置具有第一多个I / O端口，第二I / O端口和链路训练逻辑。 第一组多个I / O端口通过加载存储架构耦合到多个操作系统域。 第一多个I / O端口中的每一个被配置为在多个操作系统域和交换设备之间路由事务。 第二个I / O端口耦合到第一个共享输入/输出端点。 第一共享输入/输出端点被配置为请求/完成多个操作系统域中的每一个的事务。 链路训练逻辑耦合到第二I / O端口。 链路训练逻辑初始化第二I / O端口和第一共享输入/输出端点之间的链路，以支持对应于多个操作系统域中的每一个的事务。 链接以对多个操作系统域透明的方式被初始化。

公开(公告)号：US08686396B2

公开(公告)日：2014-04-01

申请号：US12599349

申请日：2008-05-08

申请人： Asif Khan

发明人： Asif Khan

IPC分类号： H01L29/06 ,  H01L31/00

CPC分类号： H01L33/12 ,  H01L21/02378 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/16 ,  H01L33/32

摘要： An ultra-violet light-emitting device and method for fabricating an ultraviolet light emitting device, 12, (LED or an LD) with an AlInGaN multiple-quantum-well active region, 10, exhibiting stable cw-powers. The device includes a non c-plane template with an ultraviolet light-emitting structure thereon. The template includes a first buffer layer, 321, on a substrate, 100, then a second buffer layer, 421, on the first preferably with a strain-relieving layer, 302, in both buffer layers. Next there is a semiconductor layer having a first type of conductivity, 500, followed by a layer providing a quantum-well region, 600. Another semiconductor layer, 700, having a second type of conductivity is applied next. Two metal contacts, 980 and 990, are applied to this construction, one to the semiconductor layer having the first type of conductivity and the other to the semiconductor layer having the second type of conductivity, to complete the light emitting device.

摘要翻译： 一种紫外线发光装置及其制造方法，其特征在于，制造具有稳定的cw功率的具有AlInGaN多量子阱有源区域10的紫外发光元件12（LED或LD）。 该装置包括其上具有紫外发光结构的非c面模板。 该模板在两个缓冲层中包括在衬底上的第一缓冲层321，第一缓冲层321，第二缓冲层421，优选地具有应变消除层302。 接下来，具有第一导电类型的半导体层500，接着是提供量子阱区域的层600.接下来应用具有第二类导电性的另一半导体层700。 两个金属触点980和990被应用于这种结构，一个到具有第一类型导电性的半导体层，另一个连接到具有第二导电类型的半导体层，以完成发光器件。

公开(公告)号：US08541817B2

公开(公告)日：2013-09-24

申请号：US12941332

申请日：2010-11-08

申请人： Qhalid Fareed ,  Vinod Adivarahan ,  Asif Khan

发明人： Qhalid Fareed ,  Vinod Adivarahan ,  Asif Khan

IPC分类号： H01L29/66

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/66462

摘要： An improved high breakdown voltage semiconductor device and method for manufacturing is provided. The device has a substrate and a AlaGa1-aN layer on the substrate wherein 0.1≦a≦1.00. A GaN layer is on the AlaGa1-aN layer. An In1-bGabN/GaN channel layer is on the GaN layer wherein 0.1≦b≦1.00. A AlcIndGa1-c-dN spacer layer is on the In1-bGabN/GaN layer wherein 0.1≦c≦1.00 and 0.0≦d≦0.99. A AleIn1-eN nested superlattice barrier layer is on the AlcIndGa1-c-dN spacer layer wherein 0.10≦e≦0.99. A AlfIngGa1-f-gN leakage suppression layer is on the AleIn1-eN barrier layer wherein 0.1≦f≦0.99 and 0.1≦g≦0.99 wherein the leakage suppression layer decreases leakage current and increases breakdown voltage during high voltage operation. A superstructure, preferably with metallic electrodes, is on the AlfIngGa1-f-gN leakage suppression layer.

摘要翻译： 提供了一种改进的高击穿电压半导体器件及其制造方法。 该器件在衬底上具有衬底和AlaGa1-aN层，其中0.1 @ a @ 1.00。 Ala层在AlaGa1-aN层上。 In 1-bGabN / GaN沟道层位于GaN层上，其中0.1 @ b @ 1.00。 AlcIndGa1-c-dN间隔层位于In1-bGabN / GaN层上，其中0.1 @ c @ 1.00和0.0 @ d @ 0.99。 AlInInGa1-c-dN间隔层上的AleIn1-eN嵌层超晶格势垒层，其中0.10 @ e @ 0.99。 AlInInGaGa1-f-gN泄漏抑制层位于AleIn1-eN阻挡层上，其中0.1 @ f @ 0.99和0.1 @ g @ 0.99，其中泄漏抑制层降低泄漏电流并增加高电压操作期间的击穿电压。 在AlfIngGa1-f-gN泄漏抑制层上，优选具有金属电极的上层结构。

公开(公告)号：US08304756B2

公开(公告)日：2012-11-06

申请号：US12445959

申请日：2007-10-17

申请人： Asif Khan

发明人： Asif Khan

IPC分类号： H01L29/06

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/007 ,  H01L33/20

摘要： An ultra-violet emitting light-emitting device and method for fabricating an ultraviolet light emitting device (LED) with an AlInGaN multiple-quantum-well active region exhibiting stable cw-powers. The LED includes a template with an ultraviolet light-emitting structure on it. The template includes a first buffer layer on a substrate, then a second buffer layer on the first preferably with a strain-relieving layer in both buffer layers. Next there is a semiconductor layer having a first type of conductivity followed by a layer providing a quantum-well region with an emission spectrum ranging from 190 nm to 369 nm. Another semiconductor layer having a second type of conductivity is applied next. Two metal contacts are applied to this construction, one to the semiconductor layer having the first type of conductivity and the other to the semiconductor layer having the second type of conductivity, to complete the LED.

摘要翻译： 一种用于制造具有稳定的cw功率的具有AlInGaN多量子阱活性区域的紫外发光器件（LED）的紫外发光发光器件和方法。 LED包括其上具有紫外发光结构的模板。 模板包括在衬底上的第一缓冲层，然后在第一缓冲层上，优选在两个缓冲层中具有应变消除层。 接下来，存在具有第一类型导电性的半导体层，随后是提供具有范围从190nm至369nm的发射光谱的量子阱区域的层。 接下来应用具有第二类导电性的另一半导体层。 对这种结构施加两个金属触点，一个到具有第一类型导电性的半导体层，另一个连接到具有第二导电类型的半导体层，以完成LED。

公开(公告)号：US20110073838A1

公开(公告)日：2011-03-31

申请号：US12997240

申请日：2009-06-06

申请人： Asif Khan ,  Vinod Adivarahan ,  Qhalid Fareed

发明人： Asif Khan ,  Vinod Adivarahan ,  Qhalid Fareed

IPC分类号： H01L33/06

CPC分类号： H01L33/32 ,  H01L27/153 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： Ultraviolet light emitting illuminator, and method for fabricating same, comprises an array of ultraviolet light emitting diodes and a first and a second terminal. When an alternating current is applied across the first and second terminals and thus to each of the diodes, the illuminator emits ultraviolet light at a frequency corresponding to that of the alternating current. The illuminator includes a template with ultraviolet light emitting quantum wells, a first buffer layer with a first type of conductivity and a second buffer layer with a second type of conductivity, all deposited preferably over a strain-relieving layer. A first and second metal contact are applied to the semiconductor layers having the first and second type of conductivity, respectively, to complete the LED. The emission spectrum ranges from 190 nm to 369 nm. The illuminator may be configured in various materials, geometries, sizes and designs.

摘要翻译： 紫外线发光照明器及其制造方法包括紫外发光二极管阵列和第一和第二终端阵列。 当跨越第一和第二端子以及因此施加到每个二极管的交流电时，照明器以与交流电流相对应的频率发射紫外光。 照明器包括具有紫外光发射量子阱的模板，具有第一类型导电性的第一缓冲层和具有第二导电类型的第二缓冲层，所有这些均优选沉积在应变消除层上。 将第一和第二金属接触分别施加到具有第一和第二导电类型的半导体层以完成LED。 发射光谱范围为190nm至369nm。 照明器可以被配置成各种材料，几何形状，尺寸和设计。

公开(公告)号：US20110017976A1

公开(公告)日：2011-01-27

申请号：US12934651

申请日：2009-03-27

申请人： Asif Khan ,  Qhalid Fareed

发明人： Asif Khan ,  Qhalid Fareed

IPC分类号： H01L33/06

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L33/0079 ,  H01L33/12 ,  H01S5/34333 ,  H01S2301/173

摘要： A light emitting device with a template comprising a substrate and a nested superlattice. The superlattice has Al1-x-yInyGaxN wherein 0≦x≦α and 0≦y≦1 with x increasing with distance from said substrate. An ultraviolet light-emitting structure on the template has a first layer with a first conductivity comprising Al1-x-yInyGaxN wherein α≦x; a light emitting quantum well region above the first layer comprising Al1-x-yInyGaxN wherein α≦x≦b; and a second layer over the light emitting quantum well with a second conductivity comprising Al1-x-yInyGaxN wherein b≦x. The light emitting device also has a first electrical contact in electrical connection with the first layer, a second electrical contact in electrical connection with the second layer; and the device emits ultraviolet light.

摘要翻译： 一种具有模板的发光器件，包括衬底和嵌套超晶格。 超晶格具有Al1-x-yInyGaxN，其中0和nlE; x和nlE;α和0＆nlE; y＆nlE; 1，其中x随着与所述衬底的距离而增加。 模板上的紫外发光结构具有包含Al1-x-yInyGaxN的第一导电性的第一层，其中α＆nlE; x; 包括Al1-x-yInyGaxN的第一层上方的发光量子阱区，其中α＆nlE; x＆nlE; b; 以及在所述发光量子阱上的第二层，其具有包含Al 1-x-y In y Gax N的第二导电，其中b＆nl; x。 发光器件还具有与第一层电连接的第一电触头，与第二层电连接的第二电触点; 并且该装置发射紫外线。