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51.
公开(公告)号:US20250164873A1
公开(公告)日:2025-05-22
申请号:US18776692
申请日:2024-07-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Yonghoon Moon , Honggu Im , Suk Koo Hong , Hana Kim , Sungan Do
IPC: G03F7/004 , G03F7/38 , H01L21/768
Abstract: A photoresist composition and a method of manufacturing an integrated circuit device using the photoresist composition includes an organometallic compound including a central metal and at least one organic ligand bonded to the central metal, and a solvent, wherein the at least one organic ligand included in the organometallic compound includes an ylide group including an atom with a formal charge of −1 coordinately bonded to the central metal and a hetero atom with a formal charge of +1 bonded to the atom with a formal charge of −1.
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公开(公告)号:US20250164314A1
公开(公告)日:2025-05-22
申请号:US19033246
申请日:2025-01-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sookyoung ROH , Seokho Yun
Abstract: Provided is an image sensor including a sensor substrate including a first pixel row and a second pixel row, a spacer layer arranged on the sensor substrate, and a color separating lens array arranged on the spacer layer, in which the color separating lens array includes a first color separating lens array separating, out of incident light, light of a plurality of wavelengths within a first spectral range and condensing the light of the plurality of wavelengths onto a plurality of pixels of the first pixel row and a second color separating lens array separating, out of incident light, light of a plurality of wavelengths within a second spectral range different from the first spectral range and condensing the light of the plurality of wavelengths onto a plurality of pixels of the second pixel row.
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公开(公告)号:US20250164139A1
公开(公告)日:2025-05-22
申请号:US18931860
申请日:2024-10-30
Applicant: Samsung Electronics Co., Ltd.
Inventor: Sunggoo KIM , Kyunghoon KIM , Seonuk NA , Younguk YUN , Donggyu LEE , Eomji JANG
IPC: F24F11/65 , F24F3/14 , F24F11/84 , F24F11/86 , F24F110/10 , F24F110/20
Abstract: A ventilation system includes: a housing including a first inlet drawing outdoor into the housing, a second inlet drawing room air into the housing, a first outlet discharging outdoor air into an indoor space, and a second outlet discharging room air to an outdoor space; a total heat exchanger exchanging heat between the outdoor air and the room air; a first heat exchanger between the first inlet and the total heat exchanger; a second heat exchanger between the first inlet and the first heat exchanger; a compressor supplying a refrigerant to the first heat exchanger and the second heat exchanger; a four-way valve switching a flow direction of the refrigerant; a first expansion device at an inlet of the first heat exchanger expanding the refrigerant; a second expansion device between the first heat exchanger and the second heat exchanger and expanding the refrigerant; and at least one processor.
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公开(公告)号:US20250164128A1
公开(公告)日:2025-05-22
申请号:US18825588
申请日:2024-09-05
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jisu LEE , Taeyong LEE , Heesoo JUNG , Euysung CHU , Younghoon KIM , Nakhyun KIM , Seongsu KIM , Mingi CHO
Abstract: An air purifying device includes a main body including: at least one filter unit including a filter, a blower unit including a blower, a main controller configured to control operation of the blower unit, a power supply configured to supply power to the main controller, and an output terminal configured to output power received from the power supply to outside, and at least one function module detachably assembled onto the main body and including a function unit including circuitry configured to perform a function of assisting the main body or a function different from a function of the main body, an auxiliary controller configured to control operation of the function unit, a connection terminal electrically connectable to the output terminal, and a second power supply configured to receive power separate from the power supplied to the power supply.
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公开(公告)号:US20250163639A1
公开(公告)日:2025-05-22
申请号:US18959236
申请日:2024-11-25
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Kisun PARK , Jinyounggeul OH , Kwonchul YUN , Namjun YOON , Injoo LEE , Jungsang CHOI , Judai KIM , Yongpil PARK
IPC: D06F73/02 , D06F34/14 , D06F34/28 , D06F58/10 , D06F58/20 , D06F103/62 , D06F105/02 , D06F105/40 , D06F105/58
Abstract: The disclosure relates to a clothes care apparatus and a method for controlling the same. The clothes care apparatus may obtain mode operation information of a previous steam mode stored in a memory, based on receiving a water level detection signal corresponding to a preset water level from a water level sensor at a start of a current steam mode, and control a water supply and a heater based on the obtained mode operation information of the previous steam mode.
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56.
公开(公告)号:US20250162081A1
公开(公告)日:2025-05-22
申请号:US18906657
申请日:2024-10-04
Applicant: Samsung Electronics Co., Ltd.
Inventor: Dongju PARK , Jaeheung LEE , Namtae HEO
IPC: B23K26/38 , B23K26/0622
Abstract: A laser processing apparatus includes a stage configured to support a substrate that is a processing object, a laser irradiation portion configured to focus a laser beam inside the substrate to form a laser damage layer inside the substrate along a cutting line, and a thermoreflectance measurement portion configured to irradiate a detection light onto an adjacent region near a region where the laser beam is focused and detect light reflected from the adjacent region to determine a location of splash defect in the adjacent region generated by the laser beam.
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公开(公告)号:US20250162000A1
公开(公告)日:2025-05-22
申请号:US18658495
申请日:2024-05-08
Applicant: Samsung Electronics Co., Ltd.
Inventor: Woong LEE , Giduck KWEON , Taewoo KIM , Ha-Sung KIM , Hyouncheol KIM , Hanearl JUNG , Ahjin CHO , Chin Moo CHO , Wooyeon HWANG
IPC: B08B9/032
Abstract: A substrate processing apparatus cleaning method includes: inserting a boat into a process tube; removing, by performing a first removal process, a first material deposited in the process tube; and removing, by performing a second removal process, a second material deposited in the process tube by the first removal process, wherein the first removal process includes supplying the process tube with a first gas, wherein the second removal process includes supplying the process tube with a second gas, wherein one of the first gas and the second gas includes a chlorine-based gas, and wherein the other of the first gas and the second gas includes a fluorine-based gas.
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公开(公告)号:US20250159952A1
公开(公告)日:2025-05-15
申请号:US18659659
申请日:2024-05-09
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jaeyoung Lim , HANSEONG KIM , DONGHYUN ROH , JoonYong Bae , GYUHWAN AHN , JANGHO LEE
IPC: H01L29/06 , H01L29/08 , H01L29/423 , H01L29/775 , H01L29/786
Abstract: A semiconductor device including an active pattern located on a substrate, spaced apart from other active patterns in a first direction and extending in a second direction different from the first direction; source/drain patterns located on the active pattern and each source drain pattern spaced apart from one another in the second direction; a channel pattern located between adjacent source/drain patterns; a gate pattern extending between the adjacent source/drain patterns in the first direction and surrounding at least a portion of the channel pattern; and an isolation structure extending in the first direction, the isolation structure located outside the source/drain pattern in the second direction and extending into the active pattern in a third direction different from the first and second directions, in which the isolation structure includes insulating patterns stacked in the third direction, an interfacial layer located between insulating patterns, and an insulating liner surrounding the insulating patterns.
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公开(公告)号:US20250159929A1
公开(公告)日:2025-05-15
申请号:US18756943
申请日:2024-06-27
Applicant: Samsung Electronics Co., Ltd.
Inventor: Kyoung-Mi PARK , Hyo Jin KIM , Dong Hoon HWANG , Young Jin YANG , Kyung Hee CHO
IPC: H01L29/417 , H01L23/528 , H01L29/06 , H01L29/08 , H01L29/423 , H01L29/775 , H01L29/786
Abstract: A semiconductor device is provided. The semiconductor device includes a first lower pattern extending in a first direction and including first and second sidewalls, which are opposite to each other in a second direction, and upper and lower surfaces, which are opposite to each other in a third direction, a channel separation structure extending in the first direction and contacting the first sidewall of the first lower pattern, a field insulating film contacting the second sidewall of the first lower pattern, first channel patterns disposed on an upper surface of the first lower pattern and including first sheet patterns, which are spaced apart from one another in the third direction, the first sheet patterns contacting the channel separation structure, first source/drain patterns contacting the first channel patterns and the channel separation structure, contact blocking patterns disposed on the first source/drain patterns and formed of an insulating material, the contact blocking patterns having upper surfaces on the same plane as an upper surface of the channel separation structure, first backside source/drain contacts disposed within the first lower pattern and connected to the first source/drain patterns and backside wiring lines disposed on the lower surface of the first lower pattern and connected to the first backside source/drain contacts.
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60.
公开(公告)号:US20250159928A1
公开(公告)日:2025-05-15
申请号:US18732713
申请日:2024-06-04
Applicant: Samsung Electronics Co., Ltd.
Inventor: Seungchan Yun , Kang-Ill Seo
IPC: H01L29/417 , H01L21/822 , H01L21/8238 , H01L27/06 , H01L27/092 , H01L29/423 , H01L29/66 , H01L29/775 , H01L29/786
Abstract: Stacked field-effect transistor (FET) devices are provided. A stacked FET device includes a lower FET having a lower gate structure. The stacked FET device includes a contact that is electrically connected to the lower FET. The stacked FET device includes an upper FET that is on top of the lower FET. The upper FET includes an upper gate structure that includes a conductive gate and an isolation region that is in the conductive gate and on a sidewall of the contact. Moreover, the stacked FET device includes an insulating layer that is between a lower surface of the isolation region and an upper surface of the lower gate structure. Related methods of forming stacked FET devices are also provided.
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