公开(公告)号：US20250159929A1

公开(公告)日：2025-05-15

申请号：US18756943

申请日：2024-06-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyoung-Mi PARK ,  Hyo Jin KIM ,  Dong Hoon HWANG ,  Young Jin YANG ,  Kyung Hee CHO

IPC: H01L29/417 ,  H01L23/528 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

Abstract: A semiconductor device is provided. The semiconductor device includes a first lower pattern extending in a first direction and including first and second sidewalls, which are opposite to each other in a second direction, and upper and lower surfaces, which are opposite to each other in a third direction, a channel separation structure extending in the first direction and contacting the first sidewall of the first lower pattern, a field insulating film contacting the second sidewall of the first lower pattern, first channel patterns disposed on an upper surface of the first lower pattern and including first sheet patterns, which are spaced apart from one another in the third direction, the first sheet patterns contacting the channel separation structure, first source/drain patterns contacting the first channel patterns and the channel separation structure, contact blocking patterns disposed on the first source/drain patterns and formed of an insulating material, the contact blocking patterns having upper surfaces on the same plane as an upper surface of the channel separation structure, first backside source/drain contacts disposed within the first lower pattern and connected to the first source/drain patterns and backside wiring lines disposed on the lower surface of the first lower pattern and connected to the first backside source/drain contacts.