公开(公告)号：US10826480B1

公开(公告)日：2020-11-03

申请号：US15640505

申请日：2017-07-01

申请人： Active-Semi, Inc.

发明人： Thinh Ba Nguyen ,  Thien Khanh Luong ,  Thuc Huu Lam ,  Hue Khac Trinh

IPC分类号： H03K17/08 ,  H03K19/0185 ,  H03K19/0175 ,  H01L23/525 ,  H02M1/08 ,  H02M3/155

摘要： An integrated circuit includes a gate driver circuit that controls high side and low side transistors to operate in buck or boost mode. In buck operating mode, after switching off the low side transistor, the gate driver circuit controls the high side transistor in a constant current mode. After the low side transistor is disabled and no longer conducts current, then the gate driver circuit controls the high side transistor to operate in full-enhancement mode. In boost operating mode, after switching off the high side transistor, the gate driver circuit controls the low side transistor in a constant current mode. After the high side transistor is disabled, then the gate driver circuit controls the low side switching transistor to operate in full-enhancement mode. In both buck and boost operation, the gate driver circuit operates without dead time in which both the high side and low side transistors are off.

公开(公告)号：US10823768B2

公开(公告)日：2020-11-03

申请号：US16367794

申请日：2019-03-28

申请人： DENSO CORPORATION

发明人： Akifumi Araragi

IPC分类号： G01R19/165 ,  H02M7/219 ,  H03K17/08 ,  H02M1/00

摘要： In an overcurrent detection circuit for switches parallely connected to each other, sense detectors are respectively provided for the switches. Each of the sense detectors detects a sense voltage of the corresponding one of the switches. The sense voltage of each of the switches is based on a sense current associated with a current flowing through the corresponding one of the switches. A parameter calculator calculates, based on the sense voltages calculated by the respective sense detectors, a determination parameter that is less subject to imbalance between currents flowing through the respective switches. A determiner determines whether a value of the determination parameter is higher than an overcurrent threshold, and determines that there is an overcurrent flowing through at least one of the switches upon determining that the value of the determination parameter is higher than the overcurrent threshold.

公开(公告)号：US10819102B2

公开(公告)日：2020-10-27

申请号：US15863182

申请日：2018-01-05

申请人： Power Integrations, Inc.

发明人： Robert Mayell

IPC分类号： H02H5/04 ,  H01L23/24 ,  H01L27/02 ,  H02H1/00 ,  H01L23/34 ,  G01K7/01 ,  G01K3/00 ,  H03K17/18 ,  H03K17/082 ,  H01L29/20 ,  H01L49/02 ,  H01L29/16 ,  H01L29/78 ,  H01L29/808 ,  H01L27/06 ,  H01L29/778 ,  H03K17/08

摘要： An electronic circuit for sensing a temperature rise in a power transistor device, the temperature rise caused by a current flow in the power transistor device. The power transistor device and a sense-FET are disposed on a substrate. The sense-FET senses a fractional portion of the current flow and outputs a current signal. A JFET has its drain connected to the drain of the power transistor device. The gate of the JFET is connected to the source of the power transistor device, such that when the power transistor device is on, the JFET is also turned on, and a drain voltage signal of the power transistor device is output at a second node of the JFET. A detection circuit receives the drain voltage signal and the current signal and outputs an alarm signal when the drain-source resistance of the power transistor device exceeds a combined threshold limit.

公开(公告)号：US10804892B2

公开(公告)日：2020-10-13

申请号：US15826453

申请日：2017-11-29

申请人： pSemi Corporation

发明人： Alexander Dribinsky ,  Tae Youn Kim ,  Dylan J. Kelly ,  Christopher N. Brindle

IPC分类号： H03K17/16 ,  H03K17/10 ,  H03K17/284 ,  H03K17/687 ,  H03K17/689 ,  H03K17/04 ,  H03K17/06 ,  H03K17/08

摘要： A circuit and method for controlling charge injection in a circuit are disclosed. In one embodiment, the circuit and method are employed in a semiconductor-on-insulator (SOI) Radio Frequency (RF) switch. In one embodiment, an SOI RF switch comprises a plurality of switching transistors coupled in series, referred to as “stacked” transistors, and implemented as a monolithic integrated circuit on an SOI substrate. Charge injection control elements are coupled to receive injected charge from resistively-isolated nodes located between the switching transistors, and to convey the injected charge to at least one node that is not resistively-isolated. In one embodiment, the charge injection control elements comprise resistors. In another embodiment, the charge injection control elements comprise transistors. A method for controlling charge injection in a switch circuit is disclosed whereby injected charge is generated at resistively-isolated nodes between series coupled switching transistors, and the injected charge is conveyed to at least one node of the switch circuit that is not resistively-isolated.

公开(公告)号：US10804891B2

公开(公告)日：2020-10-13

申请号：US15743121

申请日：2016-07-06

申请人： Hitachi Automotive Systems, Ltd.

发明人： Ryoichi Inada ,  Teppei Hirotsu ,  Hideyuki Sakamoto ,  Kouichi Yahata ,  Keiji Kadota

IPC分类号： H03K17/082 ,  H02M1/32 ,  G01R31/327 ,  G01R35/00 ,  H03K17/08 ,  H02M1/08 ,  H02M1/084 ,  G01R31/42 ,  H02H7/122

摘要： An object of the present invention is to diagnose an abnormality detecting circuit that detects an abnormality, such as an overcurrent of a power semiconductor, with the number of insulating elements to be additionally provided, inhibited from increasing. There are provided: a drive circuit configured to output a gate signal to a power semiconductor; an abnormality detecting circuit configured to detect an abnormality of the power semiconductor; and a diagnosis signal applying circuit configured to apply a diagnosis signal to the abnormality detecting circuit. The diagnosis signal applying circuit applies the diagnosis signal, on the basis of the gate signal output by the drive circuit.

公开(公告)号：US10790820B2

公开(公告)日：2020-09-29

申请号：US16679760

申请日：2019-11-11

申请人： pSemi Corporation

发明人： Mark L. Burgener ,  James S. Cable ,  Robert H. Benton

IPC分类号： H03K17/687 ,  H01P1/15 ,  H03K17/06 ,  H03K17/10 ,  H03K17/693 ,  H03K19/0185 ,  H03K19/0944 ,  H04B1/40 ,  H03K17/08

摘要： A novel RF switch circuit and method for switching RF signals is described. The RF switch circuit is fabricated in a silicon-on-insulator (SOI) technology. The RF switch includes pairs of switching and shunting transistor groupings used to alternatively couple RF input signals to a common RF node. The switching and shunting transistor grouping pairs are controlled by a switching control voltage (SW) and its inverse (SW_). The switching and shunting transistor groupings comprise one or more MOSFET transistors connected together in a “stacked” or serial configuration. The stacking of transistor grouping devices, and associated gate resistors, increase the breakdown voltage across the series connected switch transistors and operate to improve RF switch compression. A fully integrated RF switch is described including digital control logic and a negative voltage generator integrated together with the RF switch elements. In one embodiment, the fully integrated RF switch includes a built-in oscillator, a charge pump circuit, CMOS logic circuitry, level-shifting and voltage divider circuits, and an RF buffer circuit. Several embodiments of the charge pump, level shifting, voltage divider, and RF buffer circuits are described. The inventive RF switch provides improvements in insertion loss, switch isolation, and switch compression.

公开(公告)号：US20200287533A1

公开(公告)日：2020-09-10

申请号：US16551812

申请日：2019-08-27

申请人： Kabushiki Kaisha Toshiba

发明人： Shusuke KAWAI

IPC分类号： H03K17/16 ,  H03K17/08

摘要： An electronic circuit of the embodiments includes at least one first n-type transistor, at least one first p-type transistor, a supply circuit, a detection circuit, and a control circuit. The supply supplies current to a control terminal of a semiconductor switching element. The detection circuit acquires a value associated with a voltage at a first terminal of the semiconductor switching element. The control circuit causes one type of transistors of the first n-type transistors and the first p-type transistors to be in the non-driven state and causing at least one of the other type of transistors to be in the driven state, at least based on the value associated with the voltage. The first n-type transistor is electrically connected to a reference potential and the control terminal, and the first p-type transistor is electrically connected to a power supply potential and the control terminal.

公开(公告)号：US10700594B2

公开(公告)日：2020-06-30

申请号：US16174986

申请日：2018-10-30

申请人： FUJI ELECTRIC CO., LTD.

发明人： Akira Nakamori

IPC分类号： H02M1/32 ,  H03K17/14 ,  H03K17/567 ,  H01L29/739 ,  H02M3/156 ,  H03K17/08 ,  H03K17/082 ,  H02M1/08

摘要： A power conversion device includes a power semiconductor switching device and a drive circuit. The power semiconductor switching device is configured to supply constant power to a load by switching and to be turned on and off by a control signal from an external control circuit. The drive circuit is configured to detect an operating temperature of the power semiconductor switching device and drive the power semiconductor switching device according to a result of the detection. The drive circuit includes a temperature detecting unit configured to receive the control signal from the external control circuit and detect the operating temperature of the power semiconductor switching device at timings according to the control signal.

公开(公告)号：US10658831B2

公开(公告)日：2020-05-19

申请号：US15672958

申请日：2017-08-09

申请人： Rohm Co., Ltd.

发明人： Toru Takuma ,  Shuntaro Takahashi ,  Naoki Takahashi

IPC分类号： H02H3/08 ,  H02H9/02 ,  B60R16/02 ,  G05F1/573 ,  G06F1/30 ,  H03K19/003 ,  H02H5/04 ,  H03K17/08

摘要： An overcurrent protection circuit includes a current control part configured to control conductance of a transistor so as to limit an output current flowing when the transistor is turned on to a predetermined upper limit or less, and a duty control part configured to forcibly turning on/off the transistor at a predetermined duty ratio when a temperature protection circuit detects a temperature abnormality in a state where the current control part limits the output current.

公开(公告)号：US10566964B2

公开(公告)日：2020-02-18

申请号：US15594899

申请日：2017-05-15

申请人： Eaton Intelligent Power Limited

发明人： Geraldo Nojima

IPC分类号： H03K17/08 ,  H02M1/08 ,  H03K19/003

摘要： An apparatus includes a string of series-connected voltage clamp devices (e.g., metal-oxide varistors (MOVs)) coupled to at least one electronic device (e.g., a transistor or other semiconductor device). The apparatus further includes a bypass circuit configured to selectively bypass a subset of the string of series-connected voltage clamp devices to control a level at which a voltage applied to the at least one electronic device is clamped. A control circuit may be configured to cause the bypass circuit to bypass the subset of the string of series-connected voltage clamp devices responsive to a voltage applied to the at least one electronic device. For example, the control circuit may be configured to cause the bypass circuit to bypass the subset of the string of series-connected voltage clamp devices responsive to a magnitude of the voltage applied to the at least one electronic device exceeding a threshold.