公开(公告)号：US20220181497A1

公开(公告)日：2022-06-09

申请号：US17549839

申请日：2021-12-13

Applicant: pSemi Corporation

Inventor： Michael A. Stuber ,  Christopher N. Brindle ,  Dylan J. Kelly ,  Clint L. Kemerling ,  George P. Imthurn ,  Robert B. Welstand ,  Mark L. Burgener ,  Alexander Dribinsky ,  Tae-Youn Kim

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/49 ,  H03K17/16

Abstract: A method and apparatus are disclosed for use in improving gate oxide reliability of semiconductor-on-insulator (SOI) metal-oxide-silicon field effect transistor (MOSFET) devices using accumulated charge control (ACC) techniques. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one embodiment, a circuit includes a MOSFET, operating in an accumulated charge regime, and means for controlling the accumulated charge, operatively coupled to the SOI MOSFET. A first determination is made of the effects of an uncontrolled accumulated charge on time dependent dielectric breakdown (TDDB) of the gate oxide of the SOI MOSFET. A second determination is made of the effects of a controlled accumulated charge on TDDB of the gate oxide of the SOI MOSFET. The SOI MOSFET is adapted to have a selected average time-to-breakdown, responsive to the first and second determinations, and the circuit is operated using techniques for accumulated charge control operatively coupled to the SOI MOSFET. In one embodiment, the accumulated charge control techniques include using an accumulated charge sink operatively coupled to the SOI MOSFET body.

公开(公告)号：US20240266441A1

公开(公告)日：2024-08-08

申请号：US18439664

申请日：2024-02-12

Applicant: pSemi Corporation

Inventor： Michael A. Stuber ,  Christopher N. Brindle ,  Dylan J. Kelly ,  Clint L. Kemerling ,  George P. Imthurn ,  Robert B. Welstand ,  Mark L. Burgener ,  Alexander Dribinsky ,  Tae-Youn Kim

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/49 ,  H03K17/16

CPC classification number: H01L29/78615 ,  H01L27/1203 ,  H01L29/4908 ,  H01L29/78651 ,  H01L29/78654 ,  H01L29/78657 ,  H03K17/162

Abstract: A method and apparatus are disclosed for use in improving gate oxide reliability of semiconductor-on-insulator (SOI) metal-oxide-silicon field effect transistor (MOSFET) devices using accumulated charge control (ACC) techniques. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one embodiment, a circuit includes a MOSFET, operating in an accumulated charge regime, and means for controlling the accumulated charge. Determinations are made of effects of an uncontrolled accumulated charge and a controlled accumulated charge on time dependent dielectric breakdown (TDDB) of the gate oxide. The SOI MOSFET is adapted to have a selected average time-to-breakdown, responsive to the determinations, and the circuit is operated using techniques for ACC operatively coupled to the SOI MOSFET. In one embodiment, the ACC techniques include using an accumulated charge sink operatively coupled to the SOI MOSFET body.

公开(公告)号：USRE48965E1

公开(公告)日：2022-03-08

申请号：US16710998

申请日：2019-12-11

Applicant: pSemi Corporation

Inventor： Michael A. Stuber ,  Christopher N. Brindle ,  Dylan J. Kelly ,  Clint L. Kemerling ,  George P. Imthurn ,  Robert B. Welstand ,  Mark L. Burgener ,  Alexander Dribinsky ,  Tae Youn Kim

IPC: H01L29/786 ,  H01L29/49 ,  H01L27/12 ,  H03K17/16

Abstract: A method and apparatus are disclosed for use in improving the gate oxide reliability of semiconductor-on-insulator (SOI) metal-oxide-silicon field effect transistor (MOSFET) devices using accumulated charge control (ACC) techniques. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one embodiment, a circuit comprises a MOSFET, operating in an accumulated charge regime, and means for controlling the accumulated charge, operatively coupled to the SOI MOSFET. A first determination is made of the effects of an uncontrolled accumulated charge on time dependent dielectric breakdown (TDDB) of the gate oxide of the SOI MOSFET. A second determination is made of the effects of a controlled accumulated charge on TDDB of the gate oxide of the SOI MOSFET. The SOI MOSFET is adapted to have a selected average time-to-breakdown, responsive to the first and second determinations, and the circuit is operated using techniques for accumulated charge control operatively coupled to the SOI MOSFET. In one embodiment, the accumulated charge control techniques include using an accumulated charge sink operatively coupled to the SOI MOSFET body.

公开(公告)号：US10818796B2

公开(公告)日：2020-10-27

申请号：US15419898

申请日：2017-01-30

Applicant: pSemi Corporation

Inventor： Michael A. Stuber ,  Christopher N. Brindle ,  Dylan J. Kelly ,  Clint L. Kemerling ,  George P. Imthurn ,  Robert B. Welstand ,  Mark L. Burgener ,  Alexander Dribinsky ,  Tae Youn Kim

IPC: G06F17/50 ,  H01L29/786 ,  H01L27/12 ,  H01L29/49 ,  H03K17/16

Abstract: A method and apparatus are disclosed for use in improving the gate oxide reliability of semiconductor-on-insulator (SOI) metal-oxide-silicon field effect transistor (MOSFET) devices using accumulated charge control (ACC) techniques. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one embodiment, a circuit comprises a MOSFET, operating in an accumulated charge regime, and means for controlling the accumulated charge, operatively coupled to the SOI MOSFET. A first determination is made of the effects of an uncontrolled accumulated charge on time dependent dielectric breakdown (TDDB) of the gate oxide of the SOI MOSFET. A second determination is made of the effects of a controlled accumulated charge on TDDB of the gate oxide of the SOI MOSFET. The SOI MOSFET is adapted to have a selected average time-to-breakdown, responsive to the first and second determinations, and the circuit is operated using techniques for accumulated charge control operatively coupled to the SOI MOSFET. In one embodiment, the accumulated charge control techniques include using an accumulated charge sink operatively coupled to the SOI MOSFET body.

公开(公告)号：US11196414B2

公开(公告)日：2021-12-07

申请号：US16921790

申请日：2020-07-06

Applicant: pSemi Corporation

Inventor： Alexander Dribinsky ,  Tae Youn Kim ,  Dylan J. Kelly ,  Christopher N. Brindle

IPC: H03K17/16 ,  H03K17/10 ,  H03K17/284 ,  H03K17/687 ,  H03K17/689 ,  H03K17/04 ,  H03K17/06 ,  H03K17/08

Abstract: A circuit and method for controlling charge injection in a circuit are disclosed. In one embodiment, the circuit and method are employed in a semiconductor-on-insulator (SOI) Radio Frequency (RF) switch. In one embodiment, an SOI RF switch comprises a plurality of switching transistors coupled in series, referred to as “stacked” transistors, and implemented as a monolithic integrated circuit on an SOI substrate. Charge injection control elements are coupled to receive injected charge from resistively-isolated nodes located between the switching transistors, and to convey the injected charge to at least one node that is not resistively-isolated. In one embodiment, the charge injection control elements comprise resistors. In another embodiment, the charge injection control elements comprise transistors. A method for controlling charge injection in a switch circuit is disclosed whereby injected charge is generated at resistively-isolated nodes between series coupled switching transistors, and the injected charge is conveyed to at least one node of the switch circuit that is not resistively-isolated.

公开(公告)号：US20200335633A1

公开(公告)日：2020-10-22

申请号：US16739081

申请日：2020-01-09

Applicant: pSemi Corporation

Inventor： Michael A. Stuber ,  Christopher N. Brindle ,  Dylan J. Kelly ,  Clint L. Kemerling ,  George P. Imthurn ,  Robert B. Welstand ,  Mark L. Burgener ,  Alexander Dribinsky ,  Tae-Youn Kim

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/49 ,  H03K17/16

Abstract: A method and apparatus are disclosed for use in improving the gate oxide reliability of semiconductor-on-insulator (SOD metal-oxide-silicon field effect transistor (MOSFET) devices using accumulated charge control (ACC) techniques. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one embodiment, a circuit comprises a MOSFET, operating in an accumulated charge regime, and means for controlling the accumulated charge, operatively coupled to the SOI MOSFET. A first determination is made of the effects of an uncontrolled accumulated charge on time dependent dielectric breakdown (TDDB) of the gate oxide of the SOI MOSFET. A second determination is made of the effects of a controlled accumulated charge on TDDB of the gate oxide of the SOI MOSFET. The SOI MOSFET is adapted to have a selected average time-to-breakdown, responsive to the first and second determinations, and the circuit is operated using techniques for accumulated charge control operatively coupled to the SOI MOSFET. In one embodiment, the accumulated charge control techniques include using an accumulated charge sink operatively coupled to the SOI MOSFET body.

公开(公告)号：US10804892B2

公开(公告)日：2020-10-13

申请号：US15826453

申请日：2017-11-29

Applicant: pSemi Corporation

Inventor： Alexander Dribinsky ,  Tae Youn Kim ,  Dylan J. Kelly ,  Christopher N. Brindle

IPC: H03K17/16 ,  H03K17/10 ,  H03K17/284 ,  H03K17/687 ,  H03K17/689 ,  H03K17/04 ,  H03K17/06 ,  H03K17/08

Abstract: A circuit and method for controlling charge injection in a circuit are disclosed. In one embodiment, the circuit and method are employed in a semiconductor-on-insulator (SOI) Radio Frequency (RF) switch. In one embodiment, an SOI RF switch comprises a plurality of switching transistors coupled in series, referred to as “stacked” transistors, and implemented as a monolithic integrated circuit on an SOI substrate. Charge injection control elements are coupled to receive injected charge from resistively-isolated nodes located between the switching transistors, and to convey the injected charge to at least one node that is not resistively-isolated. In one embodiment, the charge injection control elements comprise resistors. In another embodiment, the charge injection control elements comprise transistors. A method for controlling charge injection in a switch circuit is disclosed whereby injected charge is generated at resistively-isolated nodes between series coupled switching transistors, and the injected charge is conveyed to at least one node of the switch circuit that is not resistively-isolated.

公开(公告)号：US11901459B2

公开(公告)日：2024-02-13

申请号：US17549839

申请日：2021-12-13

Applicant: pSemi Corporation

Inventor： Michael A. Stuber ,  Christopher N. Brindle ,  Dylan J. Kelly ,  Clint L. Kemerling ,  George P. Imthurn ,  Robert B. Welstand ,  Mark L. Burgener ,  Alexander Dribinsky ,  Tae-Youn Kim

IPC: G06F7/00 ,  H01L29/786 ,  H01L27/12 ,  H01L29/49 ,  H03K17/16

CPC classification number: H01L29/78615 ,  H01L27/1203 ,  H01L29/4908 ,  H01L29/78651 ,  H01L29/78654 ,  H01L29/78657 ,  H03K17/162

Abstract: A method and apparatus are disclosed for use in improving gate oxide reliability of semiconductor-on-insulator (SOI) metal-oxide-silicon field effect transistor (MOSFET) devices using accumulated charge control (ACC) techniques. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one embodiment, a circuit includes a MOSFET, operating in an accumulated charge regime, and means for controlling the accumulated charge, operatively coupled to the SOI MOSFET. A first determination is made of the effects of an uncontrolled accumulated charge on time dependent dielectric breakdown (TDDB) of the gate oxide of the SOI MOSFET. A second determination is made of the effects of a controlled accumulated charge on TDDB of the gate oxide of the SOI MOSFET. The SOI MOSFET is adapted to have a selected average time-to-breakdown, responsive to the first and second determinations, and the circuit is operated using techniques for accumulated charge control operatively coupled to the SOI MOSFET. In one embodiment, the accumulated charge control techniques include using an accumulated charge sink operatively coupled to the SOI MOSFET body.

公开(公告)号：US11695407B2

公开(公告)日：2023-07-04

申请号：US17543720

申请日：2021-12-06

Applicant: pSemi Corporation

Inventor： Alexander Dribinsky ,  Tae Youn Kim ,  Dylan J. Kelly ,  Christopher N. Brindle

IPC: H03K17/16 ,  H03K17/10 ,  H03K17/284 ,  H03K17/687 ,  H03K17/689 ,  H03K17/04 ,  H03K17/06 ,  H03K17/08

CPC classification number: H03K17/161 ,  H03K17/102 ,  H03K17/284 ,  H03K17/689 ,  H03K17/6874 ,  H03K17/04 ,  H03K17/06 ,  H03K17/08 ,  H03K2217/0009

Abstract: A circuit and method for controlling charge injection in a circuit are disclosed. In one embodiment, the circuit and method are employed in a semiconductor-on-insulator (SOI) Radio Frequency (RF) switch. In one embodiment, an SOI RF switch comprises a plurality of switching transistors coupled in series, referred to as “stacked” transistors, and implemented as a monolithic integrated circuit on an SOI substrate. Charge injection control elements are coupled to receive injected charge from resistively-isolated nodes located between the switching transistors, and to convey the injected charge to at least one node that is not resistively-isolated. In one embodiment, the charge injection control elements comprise resistors. In another embodiment, the charge injection control elements comprise transistors. A method for controlling charge injection in a switch circuit is disclosed whereby injected charge is generated at resistively-isolated nodes between series coupled switching transistors, and the injected charge is conveyed to at least one node of the switch circuit that is not resistively-isolated.

公开(公告)号：US20240007098A1

公开(公告)日：2024-01-04

申请号：US18344631

申请日：2023-06-29

Applicant: pSemi Corporation

Inventor： Alexander Dribinsky ,  Tae Youn Kim ,  Dylan J. Kelly ,  Christopher N. Brindle

IPC: H03K17/16 ,  H03K17/10 ,  H03K17/284 ,  H03K17/687 ,  H03K17/689

CPC classification number: H03K17/161 ,  H03K17/102 ,  H03K17/284 ,  H03K17/6874 ,  H03K17/689 ,  H03K17/04

Abstract: A circuit and method for controlling charge injection in a circuit are disclosed. In one embodiment, the circuit and method are employed in a semiconductor-on-insulator (SOI) Radio Frequency (RF) switch. In one embodiment, an SOI RF switch includes switching transistors coupled in series, referred to as “stacked” transistors, and implemented as a monolithic integrated circuit on an SOI substrate. Charge injection control elements are coupled to receive injected charge from resistively-isolated nodes located between the switching transistors, and to convey the injected charge to at least one node that is not resistively-isolated. The charge injection control elements include resistors or transistors. A method for controlling charge injection in a switch circuit is disclosed whereby injected charge is generated at resistively-isolated nodes between series coupled switching transistors, and the injected charge is conveyed to at least one node of the switch circuit that is not resistively-isolated.