公开(公告)号：US08852417B2

公开(公告)日：2014-10-07

申请号：US13406387

申请日：2012-02-27

申请人： Rajesh Baskaran ,  Robert W. Batz, Jr. ,  Bioh Kim ,  Tom L. Ritzdorf ,  John Lee Klocke ,  Kyle M. Hanson

发明人： Rajesh Baskaran ,  Robert W. Batz, Jr. ,  Bioh Kim ,  Tom L. Ritzdorf ,  John Lee Klocke ,  Kyle M. Hanson

IPC分类号： C25D17/02 ,  C25D7/12 ,  H01L21/288 ,  H01L21/768 ,  C25D17/00 ,  C25F3/02 ,  C25D5/02 ,  C25D3/38 ,  H05K3/42

CPC分类号： C25D5/028 ,  C25D3/12 ,  C25D3/20 ,  C25D3/30 ,  C25D3/34 ,  C25D3/38 ,  C25D3/46 ,  C25D3/54 ,  C25D5/022 ,  C25D17/001 ,  C25D17/002 ,  C25D21/12 ,  C25F3/02 ,  H01L21/2885 ,  H01L21/76846 ,  H01L21/76868 ,  H01L21/76873 ,  H05K3/423

摘要： Processes and systems for electrolytically processing a microfeature workpiece with a first processing fluid and a counter electrode are described. Microfeature workpieces are electrolytically processed using a first processing fluid, a counter electrode, a second processing fluid, and an anion permeable barrier layer. The anion permeable barrier layer separates the first processing fluid from the second processing fluid while allowing certain anionic species to transfer between the two fluids. Some of the described processes produce deposits over repeated plating cycles that exhibit resistivity values within desired ranges.

摘要翻译： 描述了利用第一处理流体和对电极对微特征工件进行电解处理的工艺和系统。 使用第一处理流体，对电极，第二处理流体和阴离子可渗透阻挡层对微特征工件进行电解处理。 阴离子可渗透阻挡层将第一处理流体与第二处理流体分离，同时允许某些阴离子物质在两种流体之间转移。 所描述的一些方法中的一些在反复电镀循环中产生沉积物，其显示出所需范围内的电阻率值。

公开(公告)号：US08729002B2

公开(公告)日：2014-05-20

申请号：US13413157

申请日：2012-03-06

申请人： Nishant Sinha ,  J. Neil Greeley

发明人： Nishant Sinha ,  J. Neil Greeley

IPC分类号： C25F3/02

CPC分类号： C09K13/08 ,  C09K13/06 ,  H01L21/31055 ,  H01L21/31111

摘要： Methods for preventing isotropic removal of materials at corners formed by seams, keyholes, and other anomalies in films or other structures include use of etch blockers to cover or coat such corners. This covering or coating prevents exposure of the corners to isotropic etch solutions and cleaning solutions and, thus, prevents higher material removal rates at the corners than at smoother areas of the structure or film. Solutions, including wet etchants and cleaning solutions, that include at least one type of etch blocker are also disclosed, as are systems for preventing higher rates of material removal at corners formed by seams, crevices, or recesses in a film or other structure. Semiconductor device structures in which etch blockers are located so as to prevent isotropic etchants from removing material from corners of seams, crevices, or recesses of a film or other structure at undesirably high rates are also disclosed.

摘要翻译： 在膜或其他结构中由接缝，键孔和其它异常形成的角部处的各向同性物质的各向同性除去方法包括使用蚀刻阻挡剂来覆盖或涂覆这些角。 这种覆盖物或涂层防止角部暴露于各向同性蚀刻溶液和清洁溶液，并且因此防止在角部比在结构或膜的平滑区域更高的材料去除速率。 还公开了包括至少一种类型的蚀刻阻挡剂的解决方案，包括湿蚀刻剂和清洁溶液，以及用于防止在膜或其它结构中由接缝，缝隙或凹陷形成的拐角处更高速率的材料去除的系统。 还公开了其中蚀刻阻挡剂被定位以防止各向同性蚀刻剂从不期望的高速率的接缝，裂缝或膜或其它结构的凹陷的角落移除材料的半导体器件结构。

公开(公告)号：US20140093782A1

公开(公告)日：2014-04-03

申请号：US13631579

申请日：2012-09-28

申请人： Donald S. Gardner ,  Charles W. Holzwarth ,  Win Jei

发明人： Donald S. Gardner ,  Charles W. Holzwarth ,  Win Jei

IPC分类号： H01M2/14 ,  H01M4/00 ,  H05K3/36 ,  H01M4/02 ,  C25F3/02

CPC分类号： H01G11/26 ,  C25F3/02 ,  C25F3/12 ,  C25F3/14 ,  H01G11/32 ,  H01G11/50 ,  H01G11/52 ,  H01G11/86 ,  H01L28/82 ,  H01M4/0442 ,  H01M4/133 ,  H01M4/134 ,  H01M4/1393 ,  H01M4/76 ,  H01M4/80 ,  H01M2004/021 ,  Y02E60/13 ,  Y10T29/49126

摘要： Embodiments of the invention describe energy storage devices, porous electrodes, and methods of formation. In an embodiment, an energy storage device includes a porous structure containing multiple main channels that extend into an electrically conductive structure at an acute angle. In an embodiment, an energy storage device includes a porous structure containing an array of V-groove or pyramid recesses.

摘要翻译： 本发明的实施例描述了储能装置，多孔电极和形成方法。 在一个实施例中，能量存储装置包括多孔结构，其包含以锐角延伸到导电结构中的多个主通道。 在一个实施例中，能量存储装置包括含有V形槽或金字塔凹槽阵列的多孔结构。

公开(公告)号：US20130240373A1

公开(公告)日：2013-09-19

申请号：US13823767

申请日：2011-09-22

申请人： Mirco Elias Kostner ,  Udo Rauch

发明人： Mirco Elias Kostner ,  Udo Rauch

IPC分类号： C25F3/02

CPC分类号： C25F3/02 ,  B23H2300/00 ,  C25F1/00 ,  C25F5/00

摘要： The invention relates to a process for electrochemically removing a coating from coated workpieces by means of a voltage applied in an electrolyte bath between the workpiece and a counter-electrode. According to the invention, a rising voltage profile is selected during the coating removal process. This has the effect that the voltage applied at the start is low, and therefore the workpieces are not damaged, but nevertheless the rise in the voltage prevents the coating removal process taking an uneconomically long time.

摘要翻译： 本发明涉及一种通过施加在工件和对电极之间的电解质浴中的电压从涂覆的工件电化学去除涂层的方法。 根据本发明，在涂层去除过程期间选择上升电压分布。 这具有在启动时施加的电压低的效果，因此工件不被损坏，但是电压的上升防止了涂层去除过程变得不经济地长时间。

公开(公告)号：US08524068B2

公开(公告)日：2013-09-03

申请号：US13221726

申请日：2011-08-30

申请人： Jose A. Medina ,  Tiffany Yun Wen Jiang ,  Ming Jiang

发明人： Jose A. Medina ,  Tiffany Yun Wen Jiang ,  Ming Jiang

IPC分类号： C25F3/00 ,  C25F3/02

CPC分类号： C25D5/36 ,  C25D3/12 ,  C25D3/20 ,  C25D5/40 ,  C25F1/02 ,  C25F3/02

摘要： Embodiments of the present invention include systems and methods for low-rate electrochemical (wet) etch that use a net cathodic current or potential. In particular, some embodiments achieve controlled etch rates of less than 0.1 nm/s by applying a small net cathodic current to a substrate as the substrate is submerged in an aqueous electrolyte. Depending on the embodiment, the aqueous electrolyte utilized may comprise the same type of cations as the material being etched from the substrate. Some embodiments are useful in etching thin film metals and alloys and fabrication of magnetic head transducer wafers.

摘要翻译： 本发明的实施例包括使用净阴极电流或电位的低速电化学（湿）蚀刻的系统和方法。 特别地，一些实施例通过在衬底被浸没在含水电解质中时将小的净阴极电流施加到衬底上来实现小于0.1nm / s的受控蚀刻速率。 根据实施例，所使用的水性电解质可以包括与从衬底上蚀刻的材料相同类型的阳离子。 一些实施例在蚀刻薄膜金属和合金以及制造磁头换能器晶片方面是有用的。

公开(公告)号：US20130220826A1

公开(公告)日：2013-08-29

申请号：US13823520

申请日：2011-09-13

申请人： Yimin Zhan ,  Yuanyuan Guo ,  Yuanfeng Luo ,  Renewi Yuan ,  Zhixue Peng ,  Garth M. Nelson ,  Massimo Arcioni ,  Francescosaverio Chiari ,  Hongtao Li

发明人： Yimin Zhan ,  Yuanyuan Guo ,  Yuanfeng Luo ,  Renewi Yuan ,  Zhixue Peng ,  Garth M. Nelson ,  Massimo Arcioni ,  Francescosaverio Chiari ,  Hongtao Li

IPC分类号： C25F7/00 ,  C25F3/02 ,  C25F3/14

CPC分类号： C25F7/00 ,  B23H5/04 ,  B23H9/00 ,  B23H9/10 ,  B23H2600/12 ,  C25F3/02 ,  C25F3/14

摘要： A machining system for machining a workpiece is provided. The machining system comprises a machine tool, a plurality of cutting tools, a CNC controller. The plurality of cutting tools comprises an electrode and a conventional cutting tool exchangeably disposed on the machine tool. The machining system further comprises a power supply, a process controller, and an electrolyte supply, wherein the machine tool, the electrode, the CNC controller, the power supply, the process controller and the electrolyte supply are configured to cooperate to function as an electroerosion machining device, wherein the machine tool, the CNC controller, the conventional cutting tool and the electrolyte supply are configured to cooperate to function as a conventional machining device, and wherein the machining system is configured to function alternately as the electroerosion machining device and the conventional machining device.

摘要翻译： 提供了一种用于加工工件的加工系统。 该加工系统包括机床，多个切削工具，CNC控制器。 多个切割工具包括电极和可交换地设置在机床上的常规切割工具。 该加工系统还包括电源，过程控制器和电解质供应源，其中机床，电极，CNC控制器，电源，过程控制器和电解质供应被配置成配合起电极作用 其特征在于，上述机床，上述CNC控制器，上述常规切削工具和上述电解液供给构成为能够起到传统加工装置的作用，其特征在于，上述加工系统被配置为交替地作为电蚀加工装置， 加工装置。

公开(公告)号：US20130078549A1

公开(公告)日：2013-03-28

申请号：US13626293

申请日：2012-09-25

申请人： Taishi FUKAZAWA ,  Wu MEl ,  Yoshihiro AKASAKA ,  Norihiro YOSHINAGA

发明人： Taishi FUKAZAWA ,  Wu MEl ,  Yoshihiro AKASAKA ,  Norihiro YOSHINAGA

IPC分类号： H01M4/86 ,  H01M4/88 ,  H01M8/10 ,  C25F3/02 ,  H01M4/92 ,  H01M4/90

CPC分类号： H01M4/8605 ,  H01M4/8867 ,  H01M4/8871 ,  H01M4/9016 ,  H01M4/9041 ,  H01M4/92 ,  H01M2008/1095

摘要： According to one embodiment, a catalyst-supporting substrate comprises a substrate and a catalyst layer including a plurality of pores, the catalyst layer being supported on the substrate. The average diameter of the section of the pore when the catalyst is cut in the thickness direction of the thickness is 5 nm to 400 nm, and the long-side to short-side ratio of the pore on the section is 1:1 to 10:1 in average.

摘要翻译： 根据一个实施方式，催化剂负载基板包括基板和包括多个孔的催化剂层，催化剂层被支撑在基板上。 当催化剂在厚度方向上切割时，孔的截面的平均直径为5nm至400nm，并且该截面上的孔的长边与短边之比为1：1至10 ：平均1。

公开(公告)号：US20130026048A1

公开(公告)日：2013-01-31

申请号：US13194760

申请日：2011-07-29

申请人： David R. Bowen ,  Ralph Jason Hemphill ,  Xiaofei Jiang ,  Corina Geiculescu ,  Tearl Stocker

发明人： David R. Bowen ,  Ralph Jason Hemphill ,  Xiaofei Jiang ,  Corina Geiculescu ,  Tearl Stocker

IPC分类号： C25F3/02

CPC分类号： H01G13/00 ,  H01G9/0029 ,  H01G9/04

摘要： Anode foils suitable for use in electrolytic capacitors, including those having multiple anode configurations, have improved strength, reduced brittleness, and increased capacitance compared to conventional anode foils for electrolytic capacitors. Exemplary methods of manufacturing an anode foil suitable for use in an electrolytic capacitor include disposing a resist material in a predetermined pattern on an exposed surface of an anode foil substrate such that a first portion of the exposed surface of the anode foil substrate is covered by the resist material, and a second portion of the exposed surface remains uncovered; polymerizing the resist material; exposing at least the second portion of the exposed surface to one or more etchants so as to form a plurality of tunnels; stripping the polymerized resist material; and widening at least a portion of the plurality of tunnels. The resist material may be deposited, for example, by ink-jet printing, stamping or screen printing.

公开(公告)号：US20120244377A1

公开(公告)日：2012-09-27

申请号：US13217915

申请日：2011-08-25

申请人： HSIN-PEI CHANG ,  WEN-RONG CHEN ,  HUANN-WU CHIANG ,  CHENG-SHI CHEN ,  LONE-WEN TAI ,  SHUN-MAO LIN

发明人： HSIN-PEI CHANG ,  WEN-RONG CHEN ,  HUANN-WU CHIANG ,  CHENG-SHI CHEN ,  LONE-WEN TAI ,  SHUN-MAO LIN

IPC分类号： B32B15/04 ,  C25F3/02

CPC分类号： B32B15/043 ,  C23C30/00 ,  C25F3/02 ,  Y10T428/12479

摘要： A porous metal article includes a substrate, a metal layer formed on the substrate, and a porous metal layer formed on the metal layer. The metal layer is a noble metal layer doped with M, M comprising an element selected from a group consisting of aluminum, magnesium and calcium, the content of M in the metal layer is between about 30 wt % and about 70 wt %. The metal layer has a thickness between about 1 micrometer and about 8 micrometers. The porous metal layer has a thickness between about 2 micrometers and about 4 micrometers.

摘要翻译： 多孔金属制品包括基材，形成在基材上的金属层和形成在金属层上的多孔金属层。 金属层是掺杂有M，M的贵金属层，其包含选自铝，镁和钙的元素，金属层中M的含量为约30重量％至约70重量％。 金属层的厚度为约1微米至约8微米。 多孔金属层的厚度为约2微米至约4微米。

公开(公告)号：US20120138335A1

公开(公告)日：2012-06-07

申请号：US12996356

申请日：2009-06-03

申请人： Prashant Tathireddy ,  Florian Solzbacher

发明人： Prashant Tathireddy ,  Florian Solzbacher

IPC分类号： H05K1/00 ,  C25F3/02 ,  H05K3/00

CPC分类号： A61N1/0529 ,  A61N1/0531 ,  Y10T29/49117

摘要： A method of fabricating an array of micro electrodes enabled to have customizable lengths. A substantially criss-cross pattern of channels on a top surface of the work-piece substrate (10) is formed using electrical discharge machining to form a plurality of shaped columns (20) having tapered profiles. The shaped columns have a tapering profile which extends at least 50% of the length of the columns. The plurality of shaped columns is etched to sharpen the tapered tips into needle tips forming the array of microelectrodes.

摘要翻译： 一种制造能够具有可定制长度的微电极阵列的方法。 使用放电加工形成在工件衬底（10）的顶表面上的通道的基本十字交叉图案，以形成具有锥形轮廓的多个成形柱（20）。 成形柱具有延伸至柱的长度的至少50％的锥形轮廓。 蚀刻多个成形柱以将锥形尖端锐化成形成微电极阵列的针尖。