公开(公告)号：US5662469A

公开(公告)日：1997-09-02

申请号：US410538

申请日：1995-03-24

Applicant: Wataru Okase ,  Yasushi Yagi ,  Satoshi Kawachi

Inventor： Wataru Okase ,  Yasushi Yagi ,  Satoshi Kawachi

IPC: C23C16/458 ,  C23C16/46 ,  C23C16/48 ,  C30B25/10 ,  C30B25/12 ,  C30B31/12 ,  C30B31/14 ,  H01L21/00 ,  H01L21/205 ,  H01L21/314 ,  F27D5/00 ,  F27D3/12

CPC classification number: C23C16/463 ,  C23C16/4583 ,  C23C16/46 ,  C23C16/481 ,  C30B25/10 ,  C30B25/12 ,  C30B31/12 ,  C30B31/14 ,  H01L21/67109

Abstract: The present invention relates to a thermal processing method wherein a cylindrical process tube that has at one end an entrance/exit is provided at the other end thereof with a heat source, and thermal processing is performed on a workpiece which has been brought in from the entrance/exit of the process tube to a prescribed position therein. This thermal processing method and an apparatus therefor is characterized in that, when the workpiece is moved to the prescribed position, it is first moved to a proximity position that is closer to the heat source than the prescribed position, then it is returned therefrom to the prescribed position. The invention is further characterized in that, if the actual processing temperature at the prescribed position changes while the workpiece is undergoing thermal processing, the workpiece is moved such that the position of the workpiece with respect to the heat generation source is changed in order to return the processing temperature at the prescribed position, to the prescribed processing temperature. This ensures that the temperature of the workpiece can be rapidly raised to the prescribed processing temperature and also that, if the temperature of the workpiece should change, it can be rapidly returned to the prescribed processing temperature.

Abstract translation: 本发明涉及一种热处理方法，其中在一端具有入口/出口的圆柱形处理管在其另一端设置有热源，并且对从已经从 处理管的入口/出口到其中的规定位置。 该热处理方法及其装置的特征在于，当工件移动到规定位置时，首先将其移动到比规定位置更靠近热源的接近位置，然后从其返回到 规定的位置。 本发明的特征还在于，如果在工件进行热加工时在规定位置处的实际加工温度变化，则工件被移动，使得工件相对于发热源的位置改变以返回 处理温度在规定的位置，达到规定的加工温度。 这样可以确保工件的温度快速提高到规定的加工温度，而且如果工件的温度变化，则可以迅速地恢复到规定的加工温度。

公开(公告)号：US5603772A

公开(公告)日：1997-02-18

申请号：US514242

申请日：1995-08-11

Applicant: Shigeaki Ide

Inventor： Shigeaki Ide

IPC: H01L21/22 ,  C23C8/10 ,  C23C10/00 ,  C30B31/12 ,  C23C11/00

CPC classification number: C30B31/12 ,  C23C10/00 ,  C23C8/10

Abstract: A furnace available for diffusion and oxidation is equipped with a plurality of groups of temperature sensors monitoring respective zones heated by associated heater elements, and a plurality of controller vary electric currents supplied to the heater elements so as to create a uniform temperature distribution around semiconductor wafers.

Abstract translation: 可用于扩散和氧化的炉子配备有多组温度传感器，其监测由相关联的加热器元件加热的相应区域，并且多个控制器改变供应到加热器元件的电流，以便在半导体晶片周围产生均匀的温度分布 。

公开(公告)号：US5487127A

公开(公告)日：1996-01-23

申请号：US131830

申请日：1993-10-05

Applicant: Christian M. Gronet ,  James F. Gibbons

Inventor： Christian M. Gronet ,  James F. Gibbons

IPC: C23C16/48 ,  C30B25/10 ,  C30B31/12 ,  C30B31/18 ,  F27B17/00 ,  F27D99/00 ,  G01J5/00 ,  G01J5/06 ,  H01L21/00 ,  H02G3/04 ,  H05B3/40 ,  C23C16/00

CPC classification number: F27D99/0006 ,  C23C16/481 ,  C23C16/482 ,  C30B25/10 ,  C30B25/105 ,  C30B31/12 ,  C30B31/18 ,  F27B17/0025 ,  F27D99/0033 ,  G01J5/0003 ,  G01J5/06 ,  H01L21/67115 ,  H02G3/0425

Abstract: A rapid thermal heating apparatus in which lamps are disposed in a plurality of light pipes arranged to illuminate and supply heat to a substrate. The light pipes are positioned so that the illumination patterns overlap. The energy supplied to the lamps is controlled to provide a predetermined heating pattern to the substrate. A liquid cooled window cooperates with the light pipes to transmit energy to a wafer disposed in an evacuated chamber.

Abstract translation: 一种快速热加热装置，其中灯被设置在多个光管中，所述多个光管被布置成照亮并向衬底供应热量。 光管被定位成使得照明图案重叠。 控制提供给灯的能量以向衬底提供预定的加热图案。 液体冷却的窗口与光管协作以将能量传递到设置在抽真空室中的晶片。

公开(公告)号：US5467220A

公开(公告)日：1995-11-14

申请号：US198726

申请日：1994-02-18

Applicant: Zheng Xu

Inventor： Zheng Xu

IPC: H01L21/324 ,  C23C16/458 ,  C23C16/46 ,  C30B25/10 ,  C30B25/12 ,  C30B31/12 ,  H01L21/00 ,  H01L21/687 ,  G02B5/10 ,  F27D11/00

CPC classification number: H01L21/67103 ,  C23C16/4585 ,  C23C16/46 ,  C30B25/10 ,  C30B25/12 ,  C30B31/12 ,  H01L21/68721 ,  H01L21/68757

Abstract: In a processing chamber that includes a wafer pedestal adapted to heat and cool a wafer during wafer processing, where the wafer is secured to the pedestal with a wafer clamp ring, a yoke having a surface in spaced facing relation with a wafer surface is positioned atop the clamp ring proximate to the wafer. The yoke surface includes a concave circumferential portion that is curved to provide a reflector, for example a parabolic or elliptical reflector, that is positioned having a focal point coincident with the wafer edge. Reflector positioning and spacing relative to the wafer surface encourage reflection of heat radiated from the edge portion of the wafer surface back to the wafer edge to mitigate thermal losses at the wafer edge and improve temperature uniformity across the surface of the wafer.

Abstract translation: 在包括晶片基座的处理室中，晶片基座适用于在晶片处理期间加热和冷却晶片，其中晶片通过晶片夹紧环固定到基座上，具有与晶片表面间隔开的表面的磁轭位于顶部 靠近晶片的夹紧环。 轭表面包括弯曲的凹形圆周部分，以提供反射器，例如抛物面或椭圆形反射器，其被定位成具有与晶片边缘重合的焦点。 相对于晶片表面的反射器定位和间隔有助于将从晶片表面的边缘部分辐射的热量反射回到晶片边缘，以减轻晶片边缘处的热损耗并提高跨晶片表面的温度均匀性。

公开(公告)号：US5418885A

公开(公告)日：1995-05-23

申请号：US998149

申请日：1992-12-29

Applicant: John R. Hauser ,  Furman Y. Sorrell ,  Jimmie J. Wortman

Inventor： John R. Hauser ,  Furman Y. Sorrell ,  Jimmie J. Wortman

IPC: C23C8/10 ,  C23C16/48 ,  C30B31/12 ,  H05B3/00 ,  F26B19/00 ,  A21B2/00 ,  H01L21/00

CPC classification number: C30B31/12 ,  C23C16/481 ,  C23C8/10 ,  H05B3/0047

Abstract: A three zone rapid thermal processing system includes three arrays of radiant heating lamps for heating a semiconductor wafer. The arrays are positioned along the axis of the wafer such that one array is adjacent one face of the wafer, the second array is adjacent the second face of the wafer and the third array is adjacent the edge of the wafer. A wafer holder holds the wafer face transverse to the common axis of the radiant heating lamps. Reflectors at each array reflect radiant heat onto the wafer. The arrays are independently connected to power sources and a controller to provide efficient coupling of the heat sources and a uniform temperature distribution across a wafer.

Abstract translation: 三区快速热处理系统包括用于加热半导体晶片的三个辐射加热灯阵列。 阵列沿着晶片的轴线定位，使得一个阵列邻近晶片的一个面，第二阵列邻近晶片的第二面，并且第三阵列邻近晶片的边缘。 晶片保持器将晶片表面横向于辐射加热灯的公共轴线保持。 每个阵列上的反射器将辐射热量反射到晶片上。 阵列独立地连接到电源和控制器以提供热源的有效耦合和跨晶片的均匀温度分布。

公开(公告)号：US5253324A

公开(公告)日：1993-10-12

申请号：US953568

申请日：1992-09-29

Applicant: Jimmie J. Wortman ,  Furman Y. Sorrell ,  John R. Hauser ,  Mark J. Fordham

Inventor： Jimmie J. Wortman ,  Furman Y. Sorrell ,  John R. Hauser ,  Mark J. Fordham

IPC: C30B31/12 ,  F26B3/28 ,  H01L21/00 ,  A21B2/00 ,  F26B3/30 ,  F27B9/04 ,  F27B9/06

CPC classification number: H01L21/67115 ,  C30B31/12 ,  F26B3/28

Abstract: A conical rapid thermal processing system includes a conical thermal radiation reflector and a plurality of elongated radiant heating sources within the conical thermal radiation reflector. The elongated radiant heating sources pass through an imaginary conical surface within the conical thermal radiation reflector. A wafer holder within the imaginary conical surface holds the wafer face transverse to the common axis of the conical reflector and the conically arranged radiant heating lamps. The conical thermal radiation reflector and conically arranged lamps provide uniform radiant heating across the face of a wafer without significantly degrading coupling efficiency.

Abstract translation: 锥形快速热处理系统包括锥形热辐射反射器和圆锥形热辐射反射器内的多个细长辐射加热源。 细长的辐射加热源通过锥形热辐射反射器内的假想圆锥形表面。 在假想圆锥形表面内的晶片保持器将晶片表面保持横向于锥形反射器和锥形布置的辐射加热灯的公共轴线。 圆锥形热辐射反射器和圆锥形布置的灯提供横跨晶片表面的均匀的辐射加热，而不会显着降低耦合效率。

公开(公告)号：US5060354A

公开(公告)日：1991-10-29

申请号：US547805

申请日：1990-07-02

Applicant: George Chizinsky

Inventor： George Chizinsky

IPC: H01L21/22 ,  C23C16/46 ,  C30B31/10 ,  C30B31/12 ,  H01L21/00 ,  H01L21/677

CPC classification number: H01L21/67748 ,  C23C16/46 ,  C23C16/463 ,  C30B31/103 ,  C30B31/12 ,  H01L21/67103 ,  Y10T29/413

Abstract: A rapid thermal processor for heat treating and cooling semiconductor material is an elongated process chamber having a base, side and top walls which enclose a heater plate assembly through which thin pins longitudinally move to carry workpieces vertically to and from the heater assembly. A cooling shutter is adapted in the chamber to shield the workpiece from the heater plate when the cooling process takes place. The chamber has gaseous ambient control means which regulates the type of atmosphere or vacuum in the chamber during heat processing of the workpiece.

Abstract translation: 用于热处理和冷却半导体材料的快速热处理器是具有底部，侧壁和顶壁的细长处理室，其包围加热器板组件，薄的销纵向移动通过加热器板组件将工件垂直地运送到加热器组件和从加热器组件垂直运送。 当冷却过程发生时，冷却挡板适于在室中屏蔽工件与加热板。 该室具有气态环境控制装置，其在工件的热处理期间调节腔室中的气氛类型或真空度。

公开(公告)号：US5057668A

公开(公告)日：1991-10-15

申请号：US232237

申请日：1988-08-15

Applicant: Spyridon Gisdakis ,  Joachim Hoepfner

Inventor： Spyridon Gisdakis ,  Joachim Hoepfner

IPC: H01L21/265 ,  C30B31/12 ,  C30B33/00 ,  H01L21/26 ,  H01L21/324

CPC classification number: C30B33/00 ,  C30B31/12

Abstract: In an apparatus for curing semiconductor wafers implementing same is provided. Pursuant to the method, semiconductor wafers, for example, GaAs, are cured in a reaction tube under a protective gas atmosphere of, for example, a mixture of N.sub.2 and AsH.sub.3. The reaction tube is initially heated to a base temperature at which the curing process is not initiated and at which no wall coatings occur. Given semiconductor wafers of compound semiconductors such as, for axample, GaAs, the protective atmosphere contains a compound of the more volatile element, for example, AsH.sub.3, that decomposes at the base temperature and forms an over-pressure of the more volatile element. The semiconductor wafer is heated to the curing temperature with a selective heater, for example a lamp, and is exposed to the curing temperature for 5 through 20 seconds.

Abstract translation: 提供了一种用于固化实现其的半导体晶片的固化装置。 根据该方法，半导体晶片（例如GaAs）在例如N 2和AsH 3的混合物的保护气体气氛下在反应管中固化。 反应管最初被加热到基本温度，在该温度下固化过程不被引发，并且没有发生壁涂层。 给出化合物半导体的半导体晶片，例如对于GaAs，保护气氛包含更易挥发的元素，例如AsH 3的化合物，其在基本温度下分解并形成更易挥发的元素的过压。 用选择性加热器（例如灯）将半导体晶片加热至固化温度，并暴露于固化温度5至20秒。

公开(公告)号：US4950870A

公开(公告)日：1990-08-21

申请号：US273972

申请日：1988-11-21

Applicant: Hiroyuki Mitsuhashi ,  Seishiro Sato ,  Wataru Ohkase

Inventor： Hiroyuki Mitsuhashi ,  Seishiro Sato ,  Wataru Ohkase

IPC: C30B25/10 ,  C30B31/12 ,  F27B17/00 ,  F27D11/02 ,  G05D23/22

CPC classification number: F27B17/0025 ,  C30B25/10 ,  C30B31/12 ,  F27D11/02 ,  G05D23/1934 ,  G05D23/22

Abstract: A heat-treating apparatus includes a process tube accommodating an object to be heat-treated therein, and a plurality of independent heaters including at least three heaters arranged at both end portions and the central portion of a side wall of the process tube, so as to surround the process tube and, the heating temperatures of the individual heaters being freely adjustable. In this heat-treating apparatus, no direct heat transfer is caused between the heaters, so that the heating temperature of the heater at each end portion of the process tube can be adjusted to a high value, without entailing such an uneven temperature distribution as is caused in the case of a conventional heat-treating apparatus. Thus, uniform temperature distribution can be attained in an area covering the same range for the conventional apparatus, even though the heaters at both end portions are reduced in length.

Abstract translation: 热处理装置包括容纳待热处理物体的处理管和多个独立的加热器，其包括布置在处理管的侧壁的两个端部和中心部分处的至少三个加热器，以便 围绕加工管，并且各个加热器的加热温度可自由调节。 在该热处理装置中，不会在加热器之间产生直接的热传递，所以能够将处理管的各端部的加热器的加热温度调整为高值，而不会产生不均匀的温度分布 在常规热处理装置的情况下引起。 因此，即使两端部的加热器的长度减小，也能够在覆盖同一范围的区域中实现均匀的温度分布。

公开(公告)号：US4924073A

公开(公告)日：1990-05-08

申请号：US308094

申请日：1989-02-08

Applicant: Takatoshi Chiba

Inventor： Takatoshi Chiba

IPC: H01L21/26 ,  C30B31/12 ,  C30B31/18 ,  F27B17/00 ,  G05D23/00 ,  G05D23/19 ,  H01L21/205 ,  H01L21/22 ,  H01L21/31

CPC classification number: C30B31/18 ,  C30B31/12 ,  F27B17/0025

Abstract: A semiconductor wafer (1) is thermally treated in a prescribed heating cycle while it is introduced into a furnace casing (4) of a furnace (4) and discharged therefrom. A temperature of a monitor chip (11) is measured by a radiation thermometer (16) immediately before introduction of the semiconductor wafer and memorized as an idling temperature. Then, while the furnace is heated up in order to make a measured temperature of the monitor chip agree with the idling temperature without the semiconductor wafer introduced, a temperature of the furnace casing is measured by a radiation thermometer (8) and memorized as a warm-up temperature. The furnace is controlled on the basis of the warm-up temperature or the idling temperature prior to sequential heat treatment of a number of semiconductor wafers.

Abstract translation: 半导体晶片（1）在被引入炉（4）的炉壳（4）中并在其中排出时，在规定的加热循环中进行热处理。 监测芯片（11）的温度是在半导体晶片引入之前立即由辐射温度计（16）测量的，并作为怠速温度存储。 然后，为了使监测芯片的测量温度与引入半导体晶片的空转温度一致，炉子被加热，炉壳的温度通过辐射温度计（8）测量并记忆为温度 升温 在多个半导体晶片的连续热处理之前，基于预热温度或空转温度来控制炉。