公开(公告)号：US5288363A

公开(公告)日：1994-02-22

申请号：US834077

申请日：1992-02-12

Applicant: Kenji Araki

Inventor： Kenji Araki

IPC: C30B15/22 ,  G05B13/02

CPC classification number: C30B15/22

Abstract: The method automatically controls the growing of a single-crystal neck portion by the CZ method. The speed of pulling up the crystal is adjusted so that the crystal diameter control deviation becomes closer to zero. Combinations of the crystal diameter control deviation .DELTA.D being large or small and the pulling-up speed V being high or low are employed as fuzzy inference conditions. According to such conditions, a correction value for the power supplied to a melt heater 18 is calculated, based on the fuzzy inference.

Abstract translation: 该方法通过CZ方法自动控制单晶颈部的生长。 调节晶体的拉伸速度，使得晶体直径控制偏差变得更接近零。 使用晶体直径控制偏差（Delta）D大或小，升高速度V为高或低的组合作为模糊推理条件。 根据这些条件，基于模糊推理，计算供给到熔融加热器18的功率的校正值。

公开(公告)号：US5268061A

公开(公告)日：1993-12-07

申请号：US950214

申请日：1992-09-24

Applicant: Kuk H. Sunwoo ,  Jae Y. Ma ,  Tae H. Kim

Inventor： Kuk H. Sunwoo ,  Jae Y. Ma ,  Tae H. Kim

IPC: C30B15/24 ,  C30B15/00 ,  C30B15/34 ,  C30B29/22 ,  C30B15/22

CPC classification number: C30B15/34 ,  C30B15/00 ,  C30B29/24 ,  Y10T117/1008 ,  Y10T117/1036 ,  Y10T117/1068

Abstract: A method and apparatus for producing a manganese-zinc ferrite single crystal using a local liquid pool formation which involves melting of a starting material in a crucible and lowering of the temperature of crucible to make the resultant melt maintain form three phase regions of an upper liquid pool region, an intermediate semi-rigid region and a lower solid region. A pair of heaters are disposed at the upper and side wall portions of crucible and controlled differently from each other so that the formed lower solid region extends at its peripheral portion throughout the inner surface of the side wall portion of the crucible, thereby minimizing the contact of the formed upper liquid pool region with the whole inner surface of the crucible. For monitoring respective temperatures of various portions in the crucible to control the heaters, there are provided thermocouples which includes a thermocouple for the crystal drawing port member, a thermocouple for the upper portion of crucible, a thermocouple for the upper portion of the side wall of crucible and a thermocouple for the lower portion of crucible.

Abstract translation: 一种使用局部液体池形成生产锰锌铁氧体单晶的方法和装置，其包括在坩埚中熔化原料并降低坩埚的温度以使所得熔体保持形成上部液体的三相区域 池区域，中间半刚性区域和下部固体区域。 一对加热器设置在坩埚的上壁部分和侧壁部分，并且彼此不同地控制，使得形成的下部固体区域在其周边部分延伸贯穿坩埚的侧壁部分的内表面，从而使接触最小化 形成的上部液体池区域与坩埚的整个内表面。 为了监测坩埚中各部分的温度以控制加热器，提供了热电偶，其包括用于晶体抽出口部件的热电偶，用于坩埚上部的热电偶，用于上部侧壁的热电偶 坩埚和用于坩埚下部的热电偶。

公开(公告)号：US5092956A

公开(公告)日：1992-03-03

申请号：US311376

申请日：1989-02-10

Applicant: Paul K. Henry ,  Edward P. Fortier

Inventor： Paul K. Henry ,  Edward P. Fortier

IPC: C30B13/30 ,  C30B15/00 ,  C30B15/22 ,  C30B15/34 ,  C30B29/64

CPC classification number: C30B15/34 ,  C30B13/30 ,  C30B15/00 ,  C30B15/22 ,  C30B29/60 ,  Y10T117/1032 ,  Y10T117/1072

Abstract: The invention relates to a stabilization device for stabilizing dendritic web seed buttons during initiation of crystal growth from a float zone melt. The invention includes angular maintenance means for maintaining a constant angular orientation between the axis of a growth initiation seed and the upper surface of a web button during withdrawal of the web button from the melt. In the preferred embodiment, the angular maintenance means includes an adjustable elevation tube which surrounds the seed, the weight of which may be selectively supported by the seed button during web button withdrawal.

Abstract translation: 本发明涉及一种稳定装置，用于在从浮区熔体开始晶体生长期间稳定树枝状网状种子按钮。 本发明包括角度维持装置，用于在将网状物按钮从熔体中取出期间，保持在生长起始种子的轴线和网状物按钮的上表面之间恒定的角度取向。 在优选实施例中，角度维持装置包括一个包围种子的可调节升降管，其重量可以在网状物按钮取出期间由种子按钮选择性地支撑。

公开(公告)号：US4857278A

公开(公告)日：1989-08-15

申请号：US72554

申请日：1987-07-13

Applicant: Michael A. Gevelber ,  George Stephanopoulos

Inventor： Michael A. Gevelber ,  George Stephanopoulos

IPC: C30B15/22

CPC classification number: C30B15/22 ,  Y10T117/1008

Abstract: The control system includes a master loop for controlling crystal interface diameter and slave control loops for controlling the melt and the crystal thermal environment. Diameter and meniscus angle signals are partitioned into both a low frequency and a high frequency signal. The low frequency signal is used to adjust the set point of the melt. The higher frequency signal is used to control the crystal pull rate. The crystal control slave loop regulates crystal heat flux which may include following a heat flux trajectory. The heat flux trajectory may also be used to adjust the melt temperature set point.

Abstract translation: 控制系统包括用于控制晶体界面直径的主回路和用于控制熔体和晶体热环境的从控制回路。 直径和弯月面角信号被分为低频和高频信号。 低频信号用于调节熔体的设定点。 较高的频率信号用于控制晶体拉速。 晶体控制从回路调节晶体热通量，其可以包括跟随热通量轨迹。 热通量轨迹也可用于调节熔体温度设定点。

公开(公告)号：US4849065A

公开(公告)日：1989-07-18

申请号：US100969

申请日：1987-09-25

Applicant: Yasunori Ohkubo ,  Toshihiko Suzuki ,  Nobuyuki Izawa

Inventor： Yasunori Ohkubo ,  Toshihiko Suzuki ,  Nobuyuki Izawa

IPC: C30B15/22 ,  C30B15/30 ,  H01L21/18

CPC classification number: C30B15/305 ,  Y10S117/917

Abstract: A crystal growing method for growing a crystal from a raw material melt highly magnetic field is being applied to the raw material melt, the electromagnet for applying the magnetic field being supplied with a direct current having a ripple factor of less than 5% to thereby grow a crystal with good crystallinity properties.

Abstract translation: 将原料熔融高磁场生长晶体的晶体生长方法应用于原料熔液，用于施加具有小于5％的纹波系数的直流电磁场的电磁体，从而生长 具有良好结晶性的晶体。

公开(公告)号：US4734267A

公开(公告)日：1988-03-29

申请号：US511279

申请日：1983-07-06

Applicant: Masakatu Kojima

Inventor： Masakatu Kojima

IPC: C30B27/02 ,  H01L21/208 ,  B01D9/00 ,  C30B15/22

CPC classification number: C30B27/02 ,  Y10T117/1032

Abstract: An apparatus for growing compound semiconductor single crystals includes a collector which removes the excess amount of melt B.sub.2 O.sub.3 from the crucible containing melt GaP and melt B.sub.2 O.sub.3.The collector moves up and down independently with reference to the shaft used in pulling the single crystals from the crucible.

Abstract translation: 用于生长化合物半导体单晶的装置包括从含有熔融GaP和熔体B 2 O 3的坩埚中除去过量的熔体B 2 O 3的收集器。 收集器相对于从坩埚中拉出单晶所使用的轴独立地上下移动。

公开(公告)号：US4512954A

公开(公告)日：1985-04-23

申请号：US521826

申请日：1983-08-10

Applicant: Toshiro Matsui

Inventor： Toshiro Matsui

IPC: G01F23/24 ,  C30B15/02 ,  C30B15/20 ,  C30B15/22 ,  H01L21/208

CPC classification number: C30B15/22 ,  Y10T117/1008 ,  Y10T117/1044

Abstract: In a crystal growing apparatus, an electrode is arranged above a crystal raw material melt at a distance therefrom. Changes in the resistance of the atmosphere between the electrode and the melt are detected so as to detect the surface level of the melt. The crystal pulling speed or power supply for heating the melt is controlled in accordance with the detection result, thereby performing dimension control of the crystal.

Abstract translation: 在晶体生长装置中，电极与晶体原料熔体相距一定距离设置。 检测电极和熔体之间的气氛阻力的变化，以便检测熔体的表面水平。 根据检测结果控制用于加热熔体的晶体拉拔速度或电源，从而进行晶体的尺寸控制。

公开(公告)号：US4511428A

公开(公告)日：1985-04-16

申请号：US396986

申请日：1982-07-09

Applicant: Hitendra Ghosh ,  Ashok Murgai ,  Wolfgang A. Westdorp

Inventor： Hitendra Ghosh ,  Ashok Murgai ,  Wolfgang A. Westdorp

IPC: C30B15/00 ,  C30B15/04 ,  C30B15/14 ,  C30B15/20 ,  C30B15/22 ,  C30B15/30 ,  C30B29/06 ,  H01L21/208

CPC classification number: C30B15/22 ,  C30B15/04 ,  C30B15/14 ,  C30B15/30 ,  Y10S117/916

Abstract: An improved method of growing silicon crystals by the Czochralski method to obtain a desired oxygen concentration level with both axial and radial uniformity. A crucible is located within a heater to achieve a given temperature profile which is related to the oxygen concentration, and then raised and rotated at an increasing speed together with a high crystal rotation rate to achieve the uniformity.

Abstract translation: 通过切克劳斯基法（Czochralski method）生长硅晶体以获得具有轴向和径向均匀性的所需氧浓度水平的改进​​方法。 坩埚位于加热器内以实现与氧浓度相关的给定温度分布，然后以高晶体旋转速率以增加的速度升高和旋转以实现均匀性。

公开(公告)号：US3761692A

公开(公告)日：1973-09-25

申请号：US3761692D

申请日：1971-10-01

Applicant: TEXAS INSTRUMENTS INC

Inventor： COPE E

IPC: C25B15/04 ,  C30B15/20 ,  C30B15/22 ,  C30B15/26 ,  G06G7/58 ,  H01L7/40

CPC classification number: C30B15/22 ,  Y10T117/1008

Abstract: An automated crystal pulling system utilizes a digital computer to control a Czochralski crystal puller. Crystal pull rate, crystal spin rate, crucible lift rate and crucible spin rate are monitored with tachometers, and the monitored signals are applied to controllers to control the respective motors and provide independent closed control loops, with each controller having a set point signal input from the computer. A sensor detects the output level of the radio frequency generator (induction heater) and applies a signal to a generator controller having a set point input from the computer, providing closed loop temperature control. A temperature control algorithm receives an input from a melt temperature sensor and calculates the set point to the generator controller. A diameter control algorithm receives an input from a crystal diameter sensor and calculates the set point to the crystal pull motor controller. A melt level control algorithm claculates the set point to the crucible lift motor controller to provide a constant melt level. An adaptive control algorithm adjusts melt temperature, via the temperature control algorithm, as required to maintain average pull rate within imposed limits. Crystal specifications are input to the computer via a card reader. Operators are required only to load the charge, read in the specification card, grow the crystal stem, initialize various procedures, and remove the crystal ingot and clean and reload the puller.

Abstract translation: 自动晶体拉制系统利用数字计算机来控制切克劳斯基晶体拉拔器。 使用转速计监测晶体拉速率，晶体旋转速率，坩埚提升速率和坩埚旋转速率，并将监测到的信号施加到控制器以控制相应的电机并提供独立的闭合控制回路，每个控制器具有从 电脑 传感器检测射频发生器（感应加热器）的输出电平，并将信号施加到具有从计算机输入的设定值的发电机控制器，从而提供闭环温度控制。 温度控制算法从熔体温度传感器接收输入，并计算到发电机控制器的设定值。 直径控制算法接收来自晶体直径传感器的输入，并计算到晶体拉动马达控制器的设定点。 熔体水平控制算法将设定点与坩埚提升电机控制器相结合，以提供恒定的熔体水平。 自适应控制算法通过温度控制算法根据需要调整熔体温度，以保持施加的极限内的平均牵引速率。 水晶规格通过读卡器输入计算机。 操作员只需要加载电荷，读取规格卡，生长晶棒，初始化各种程序，并移除晶体块，清洁并重新加载拉拔器。

公开(公告)号：US3617392A

公开(公告)日：1971-11-02

申请号：US3617392D

申请日：1968-10-29

Applicant: SEMIMETALS INC

Inventor： LOCKE RICHARD JR

IPC: C30B15/22 ,  B01J17/18

CPC classification number: C30B15/22 ,  Y10T117/1008 ,  Y10T117/1068

Abstract: Apparatus and process for crystal growing by the Czochralski or similar processes in which the operator determines the amount of power to be furnished to the heating element for the crystal material, and in which the system automatically maintains said furnished power at said determined amount. In this way shortrange disturbances in the heating process are compensated for, while long-range changes are taken care of by manual or automatic changes, from time to time, in the power level to be furnished. As a result, crystal diameter control is markedly improved on a production basis.