公开(公告)号：US20150214032A1

公开(公告)日：2015-07-30

申请号：US14679105

申请日：2015-04-06

申请人： Hitachi-Kokusai Electric Inc.

发明人： Yushin TAKASAWA ,  Hajime KARASAWA ,  Yoshiro HIROSE

IPC分类号： H01L21/02 ,  C23C16/46 ,  C23C16/455 ,  C23C16/52

CPC分类号： H01L21/02271 ,  C23C14/542 ,  C23C16/0209 ,  C23C16/345 ,  C23C16/45527 ,  C23C16/45531 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/45546 ,  C23C16/45557 ,  C23C16/46 ,  C23C16/50 ,  C23C16/52 ,  C23C28/36 ,  H01L21/02112 ,  H01L21/02123 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02145 ,  H01L21/02153 ,  H01L21/02161 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02321 ,  H01L21/02326 ,  H01L21/02332 ,  H01L21/3141 ,  H01L21/318 ,  H01L21/3185 ,  H01L21/67109

摘要： Provided is a technique including forming a film on a substrate, the film including a first element and a second element different from the first element, by performing a cycle a predetermined number of times. The cycle includes: forming a first layer including the first element by supplying a gas containing the first element to the substrate, wherein the first layer is a discontinuous layer, a continuous layer, or a layer in which at least one of the discontinuous layer or the continuous layer is overlapped; and forming a second layer including the first element and the second element by supplying a gas containing the second element to the substrate to modify the first layer under a condition where a modifying reaction of the first layer by the gas containing the second element is not saturated.

摘要翻译： 提供了一种技术，包括在基板上形成膜，该膜包括第一元件和与第一元件不同的第二元件，通过执行预定次数的周期。 该循环包括：通过将含有第一元素的气体供应到基底来形成包括第一元素的第一层，其中第一层是不连续层，连续层或层，其中至少一个不连续层或 连续层重叠; 以及通过将含有所述第二元素的气体供给到所述基板而形成包含所述第一元素和所述第二元素的第二层，以在所述第一层由含有所述第二元素的气体的改性反应不饱和的条件下改性所述第一层 。

公开(公告)号：US20150214024A1

公开(公告)日：2015-07-30

申请号：US14679180

申请日：2015-04-06

申请人： Hitachi-Kokusai Electric Inc.

发明人： Yushin TAKASAWA ,  Hajime KARASAWA ,  Yoshiro HIROSE

IPC分类号： H01L21/02 ,  C23C16/52 ,  C23C16/46 ,  C23C16/455

CPC分类号： H01L21/02271 ,  C23C14/542 ,  C23C16/0209 ,  C23C16/345 ,  C23C16/45527 ,  C23C16/45531 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/45546 ,  C23C16/45557 ,  C23C16/46 ,  C23C16/50 ,  C23C16/52 ,  C23C28/36 ,  H01L21/02112 ,  H01L21/02123 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02145 ,  H01L21/02153 ,  H01L21/02161 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02321 ,  H01L21/02326 ,  H01L21/02332 ,  H01L21/3141 ,  H01L21/318 ,  H01L21/3185 ,  H01L21/67109

摘要： Provided is a technique including forming a film by performing a cycle a predetermined number of times. The cycle includes: (a) forming a discontinuous first layer including the first element and having a thickness of less than one atomic layer on the substrate by supplying a gas containing the first element into a process vessel accommodating the substrate; and (b) forming a second layer including the first element and the second element by supplying a gas containing the second element into the process vessel to modify the first layer under a condition where a modifying reaction of the first layer by the gas containing the second element is not saturated.

摘要翻译： 提供了一种技术，包括通过执行预定次数的循环来形成膜。 所述循环包括：（a）通过将含有所述第一元素的气体供应到容纳所述基板的处理容器中，在所述基板上形成包括所述第一元素并具有小于一个原子层的厚度的不连续的第一层; 和（b）通过将含有第二元素的气体供给处理容器来形成包括第一元素和第二元素的第二层，以在第一层由含有第二元素的气体进行改性反应的条件下改性第一层 元素不饱和。

公开(公告)号：US20150155244A1

公开(公告)日：2015-06-04

申请号：US14370782

申请日：2013-04-26

申请人： SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.

发明人： Koji Ito ,  Atsushi Ogasawara ,  Koya Muyari

IPC分类号： H01L23/00 ,  C03C3/091 ,  C03C8/02 ,  H01L23/29 ,  H01L21/02

CPC分类号： H01L23/564 ,  C03C3/091 ,  C03C3/093 ,  C03C8/02 ,  C03C2204/00 ,  C03C2205/00 ,  C03C2207/00 ,  H01L21/02112 ,  H01L21/316 ,  H01L21/76232 ,  H01L23/291 ,  H01L23/3171 ,  H01L29/66136 ,  H01L29/8611 ,  H01L29/8613 ,  H01L2924/0002 ,  H01L2924/00

摘要： A glass composition for protecting a semiconductor junction is made of fine glass particles prepared from a material in a molten state obtained by melting a raw material which contains at least SiO2, B2O3, Al2O3 and oxide of alkaline earth metal and substantially contains none of Pb, As, Sb, Li, Na, K and Zn, and contains no filler.

摘要翻译： 用于保护半导体结的玻璃组合物由熔融状态的材料制成的微细玻璃颗粒由熔融至少包含SiO 2，B 2 O 3，Al 2 O 3和碱土金属氧化物的原料熔化而基本上不含Pb， As，Sb，Li，Na，K和Zn，不含填料。

公开(公告)号：US20150118395A1

公开(公告)日：2015-04-30

申请号：US14587909

申请日：2014-12-31

申请人： President and Fellows of Harvard College

发明人： Roy Gerald GORDON ,  Jill S. BECKER ,  Dennis HAUSMANN ,  Seigi SUH

IPC分类号： C23C16/30 ,  C01B33/26 ,  C01B25/36 ,  C01B25/30 ,  C23C16/40 ,  C01G25/02 ,  C01G35/00 ,  C01B33/12 ,  C23C16/455 ,  C01B33/20 ,  C01G27/02

CPC分类号： H01L21/02159 ,  C01B13/34 ,  C01B25/30 ,  C01B25/36 ,  C01B33/126 ,  C01B33/20 ,  C01B33/26 ,  C01G25/02 ,  C01G27/02 ,  C01G35/00 ,  C07F9/091 ,  C07F9/11 ,  C23C16/30 ,  C23C16/40 ,  C23C16/401 ,  C23C16/402 ,  C23C16/405 ,  C23C16/455 ,  C23C16/45525 ,  C23C16/45531 ,  C23C16/45553 ,  H01L21/02112 ,  H01L21/02148 ,  H01L21/02156 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02205 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/31612 ,  H01L28/40 ,  H01L29/0684 ,  H01L29/42364 ,  H01L29/517

摘要： Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example, vapors of tris(tert-butoxy)silanol react with vapors of tetrakis(ethylmethylamido)hafnium to deposit hafnium silicate on surfaces heated to 300° C. The product film has a very uniform stoichiometry throughout the reactor. Similarly, vapors of diisopropylphosphate react with vapors of lithium bis(ethyldimethylsilyl)amide to deposit lithium phosphate films on substrates heated to 250° C. Supplying the vapors in alternating pulses produces these same compositions with a very uniform distribution of thickness and excellent step coverage.

摘要翻译： 金属硅酸盐或磷酸盐通过烷氧基硅烷醇或烷基磷酸盐的蒸气与活性金属酰胺，烷基或醇盐的反应沉积在加热的底物上。 例如，三（叔丁氧基）硅烷醇的蒸气与四（乙基甲基氨基）铪的蒸气反应，在加热到300℃的表面上沉积硅酸铪。产物膜在整个反应器中具有非常均匀的化学计量。 类似地，二异丙基磷酸盐的蒸气与双（乙基二甲基甲硅烷基）氨基锂的蒸气反应，以将磷酸锂膜沉积在加热至250℃的基板上。以交替脉冲提供蒸气产生具有非常均匀的厚度分布和优异的台阶覆盖率的相同组成。

公开(公告)号：US20150102341A1

公开(公告)日：2015-04-16

申请号：US14505004

申请日：2014-10-02

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei YAMAZAKI ,  Yasuharu HOSAKA ,  Toshimitsu OBONAI ,  Junichi KOEZUKA ,  Yukinori SHIMA ,  Masahiko HAYAKAWA ,  Takashi HAMOCHI ,  Suzunosuke HIRAISHI

IPC分类号： H01L29/786 ,  H01L29/24

CPC分类号： H01L21/477 ,  H01L21/02112 ,  H01L21/02403 ,  H01L21/28 ,  H01L29/24 ,  H01L29/78606 ,  H01L29/7869

摘要： To suppress a change in electrical characteristics and to improve reliability in a semiconductor device using a transistor including an oxide semiconductor. The semiconductor device includes a gate electrode over an insulating surface, an oxide semiconductor film overlapping with the gate electrode, a gate insulating film which is between the gate electrode and the oxide semiconductor film and is in contact with a surface of the oxide semiconductor film, a protective film in contact with an opposite surface of the surface of the oxide semiconductor film, and a pair of electrodes in contact with the oxide semiconductor film. In the gate insulating film or the protective film, the amount of gas having a mass-to-charge ratio m/z of 17 released by heat treatment is greater than the amount of nitrogen oxide released by heat treatment.

摘要翻译： 为了抑制电特性的改变，并提高使用包括氧化物半导体的晶体管的半导体器件的可靠性。 半导体器件包括绝缘表面上的栅电极，与栅电极重叠的氧化物半导体膜，位于栅电极和氧化物半导体膜之间并与氧化物半导体膜的表面接触的栅极绝缘膜， 与氧化物半导体膜的表面的相对表面接触的保护膜和与氧化物半导体膜接触的一对电极。 在栅极绝缘膜或保护膜中，通过热处理释放的质荷比为m / z为17的气体的量比通过热处理释放的氮氧化物的量大。

公开(公告)号：US08993446B2

公开(公告)日：2015-03-31

申请号：US13868412

申请日：2013-04-23

申请人： GLOBALFOUNDRIES Inc.

发明人： Hung-Wei Liu ,  Tsung-Liang Chen ,  Huang Liu ,  Zhiguo Sun

IPC分类号： H01L21/311 ,  H01L21/02

CPC分类号： H01L21/02112 ,  H01L21/02129 ,  H01L21/02131 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/76837

摘要： A method for flowable oxide deposition is provided. An oxygen source gas is increased as a function of time or film depth to change the flowable oxide properties such that the deposited film is optimized for gap fill near a substrate surface where high aspect ratio shapes are present. The oxygen gas flow rate increases as the film depth increases, such that the deposited film is optimized for planarization quality at the upper regions of the deposited film.

摘要翻译： 提供了一种可流动氧化物沉积的方法。 作为时间或膜深度的函数，氧源气体增加以改变可流动的氧化物性质，使得沉积膜针对存在高纵横比形状的衬底表面附近的间隙填充进行了优化。 氧气流速随着膜深度的增加而增加，使得沉积膜对沉积膜的上部区域的平坦化质量进行了优化。

公开(公告)号：US08945993B2

公开(公告)日：2015-02-03

申请号：US14028837

申请日：2013-09-17

申请人： Samsung Electro-Mechanics Co., Ltd.

发明人： Jung Hyun Park ,  Nam Keun Oh ,  Sang Duck Kim ,  Jong Gyu Choi ,  Young Ji Kim ,  Ji Eun Kim ,  Myung Sam Kang

IPC分类号： H01L21/332 ,  H01L21/768 ,  H01L23/13 ,  H01L23/00 ,  H01L21/02 ,  H01L23/31

CPC分类号： H01L21/76885 ,  H01L21/02112 ,  H01L23/13 ,  H01L23/3128 ,  H01L24/48 ,  H01L24/97 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/4824 ,  H01L2224/48465 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2224/85 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599

摘要： A method of manufacturing a ball grid array substrate includes: forming a first circuit pattern and a second circuit pattern on a first metal carrier and a second metal carrier, respectively; stacking a first insulating layer and a second insulating layer with a separable material interposed therebetween, wherein each of the first and second insulating layers has first and second surfaces opposing each other, and the first surface contacts the separable material; burying the first and second circuit patterns in the second surfaces of the first and second insulating layers, respectively; removing the first and second metal carriers; removing the separable material to separate the first and second insulating layers from each other; and forming an opening in each of the first and second insulating layers to connect the first and second surfaces with each other. The method may also be part of a process for manufacturing a semiconductor package.

摘要翻译： 制造球栅阵列基板的方法包括：分别在第一金属载体和第二金属载体上形成第一电路图案和第二电路图案; 堆叠具有插入其间的可分离材料的第一绝缘层和第二绝缘层，其中第一和第二绝缘层中的每一个具有彼此相对的第一和第二表面，并且第一表面接触可分离材料; 将第一和第二电路图案分别埋在第一和第二绝缘层的第二表面中; 去除所述第一和第二金属载体; 去除可分离材料以将第一和第二绝缘层彼此分离; 以及在所述第一绝缘层和所述第二绝缘层的每一个中形成开口以将所述第一表面和所述第二表面彼此连接。 该方法也可以是用于制造半导体封装的工艺的一部分。

公开(公告)号：US20140370692A1

公开(公告)日：2014-12-18

申请号：US14305364

申请日：2014-06-16

申请人： HITACHI KOKUSAI ELECTRIC INC.

发明人： Atsushi SANO ,  Yoshiro HIROSE ,  Tsukasa KAMAKURA

IPC分类号： H01L21/02 ,  H01L21/70

CPC分类号： H01L21/0228 ,  C23C16/342 ,  C23C16/36 ,  C23C16/45531 ,  C23C16/45546 ,  H01L21/02112 ,  H01L21/02274

摘要： Provided is a method of manufacturing a semiconductor device, which is capable of increasing the controllability of the concentration of carbon in a film by increasing the yield when a boron carbonitride film or a boron nitride film is formed. The method includes forming a film containing boron, carbon and nitrogen or a film containing boron and nitrogen on the substrate by performing, a predetermined number of times, a cycle including supplying a source gas consisting of boron and a halogen element to a substrate and supplying a reactive gas consisting of carbon, nitrogen and hydrogen to the substrate.

摘要翻译： 提供一种制造半导体器件的方法，其能够通过在形成氮化硼氮化硼或氮化硼膜时提高产率来提高膜中碳浓度的可控性。 该方法包括：在基板上形成含有硼，碳和氮的膜或含有硼和氮的膜，预定次数的循环，包括将由硼和卤素元素组成的源气体供给到基板，并供给 由碳，氮和氢组成的反应性气体。

公开(公告)号：US20140363983A1

公开(公告)日：2014-12-11

申请号：US13912666

申请日：2013-06-07

申请人： ASM IP Holding B.V.

发明人： Akinori Nakano ,  Shintaro Ueda

IPC分类号： H01L21/02

CPC分类号： H01L21/02112 ,  C23C16/02 ,  C23C16/401 ,  H01L21/0201 ,  H01L21/02115 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02277 ,  H01L21/76834 ,  H01L21/76837

摘要： A method for filling recesses of a substrate with an insulation film includes: (i) exposing surfaces of the recesses of the substrate to a pre-deposition gas in a reactive state in a reaction space to treat the surfaces with reactive hydrocarbons generated from the pre-deposition gas without filling the recesses; and (ii) depositing a flowable insulation film using a process gas other than the pre-deposition gas on a surface of the substrate to fill the recesses treated in step (i) therewith by plasma reaction. The pre-deposition gas has at least one hydrocarbon unit in its molecule.

摘要翻译： 用绝缘膜填充基板的凹部的方法包括：（i）将基板的凹部的表面暴露于处于反应状态的反应性状态的预沉积气体，以便在由表面产生的活性烃 - 不填充凹槽的沉积气体; 和（ii）使用除了预沉积气体之外的处理气体在基板的表面上沉积可流动的绝缘膜，以通过等离子体反应填充步骤（i）中处理的凹部。 预沉积气体在其分子中具有至少一个烃单元。

公开(公告)号：US20140353851A1

公开(公告)日：2014-12-04

申请号：US14369732

申请日：2012-05-08

申请人： Koya Muyari ,  Koji Ito ,  Atsushi Ogasawara ,  Kazuhiko Ito

发明人： Koya Muyari ,  Koji Ito ,  Atsushi Ogasawara ,  Kazuhiko Ito

IPC分类号： H01L23/29 ,  H01L21/02 ,  C03C8/04 ,  H01L21/56

CPC分类号： H01L23/291 ,  C03C3/093 ,  C03C8/04 ,  C03C8/24 ,  C03C2207/00 ,  H01L21/02112 ,  H01L21/02164 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/02192 ,  H01L21/02345 ,  H01L21/56 ,  H01L21/761 ,  H01L21/76224 ,  H01L21/76232 ,  H01L23/3171 ,  H01L23/3185 ,  H01L29/66136 ,  H01L29/8611 ,  H01L29/8613 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided is a glass composition for protecting a semiconductor junction which contains at least SiO2, B2O3, Al2O3, ZnO and at least two oxides of alkaline earth metals selected from a group consisting of CaO, MgO and BaO, and substantially contains none of Pb, As, Sb, Li, Na and K, wherein an average linear expansion coefficient within a temperature range of 50° C. to 550° C. falls within a range of 3.33×10−6 to 4.13×10−6. A semiconductor device having high breakdown strength can be manufactured using such a glass material containing no lead in the same manner as a conventional case where “a glass material containing lead silicate as a main component” is used.

摘要翻译： 本发明提供一种用于保护半导体结的玻璃组合物，其至少含有SiO 2，B 2 O 3，Al 2 O 3，ZnO和至少两种选自CaO，MgO和BaO的碱土金属的氧化物，并且基本上不含有Pb，As ，Sb，Li，Na和K，其中在50℃至550℃的温度范围内的平均线膨胀系数在3.33×10 -6至4.13×10 -6的范围内。 与使用“含有硅酸铅作为主要成分的玻璃材料”的常规情况相同的方式，可以使用不含铅的玻璃材料制造具有高击穿强度的半导体器件。