公开(公告)号：US10056383B2

公开(公告)日：2018-08-21

申请号：US15446295

申请日：2017-03-01

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yu-Chang Lin ,  Chun-Feng Nieh ,  Huicheng Chang ,  Hou-Yu Chen ,  Yong-Yan Lu

IPC: H01L29/78 ,  H01L27/092 ,  H01L29/66 ,  H01L27/12 ,  H01L21/8238 ,  H01L21/265 ,  H01L21/8234 ,  H01L21/02 ,  H01L29/49 ,  H01L21/20 ,  H01L21/336 ,  H01L29/165

CPC classification number: H01L27/0924 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/26586 ,  H01L21/26593 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823878 ,  H01L21/845 ,  H01L27/1211 ,  H01L29/165 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/4975 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66795 ,  H01L29/66803 ,  H01L29/6681 ,  H01L29/7842 ,  H01L29/7846 ,  H01L29/7848 ,  H01L29/785 ,  H01L29/7851 ,  H01L29/7855

Abstract: A semiconductor device includes a substrate, a fin structure and an isolation layer formed on the substrate and adjacent to the fin structure. The semiconductor device includes a gate structure formed on at least a portion of the fin structure and the isolation layer. The semiconductor device includes an epitaxial layer including a strained material that provides stress to a channel region of the fin structure. The epitaxial layer has a first region and a second region, in which the first region has a first doping concentration of a first doping agent and the second region has a second doping concentration of a second doping agent. The first doping concentration is greater than the second doping concentration. The epitaxial layer is doped by ion implantation using phosphorous dimer.