公开(公告)号：US09829735B2

公开(公告)日：2017-11-28

申请号：US15040909

申请日：2016-02-10

Applicant: Samsung Display Co., Ltd

Inventor： Seung Hyun Park ,  Jun Ho Song ,  Jean Ho Song

IPC: G02F1/1333 ,  H01L27/12 ,  G02F1/1343 ,  G06F3/041 ,  G06F3/044 ,  G02F1/1335 ,  G02F1/1337 ,  G02F1/136 ,  G02F1/1362

CPC classification number: G02F1/13338 ,  G02F1/133512 ,  G02F1/133707 ,  G02F1/134363 ,  G02F2001/13606 ,  G02F2001/136222 ,  G06F3/0412 ,  G06F3/044 ,  G06F2203/04103 ,  H01L27/124

Abstract: There is provided a display device including a first substrate, a second substrate facing the first substrate, a display layer disposed between the first and the second substrates, a light blocking pattern, and a sensing line. The first substrate may include a thin film transistor (TFT) disposed on a base substrate, a first passivation layer disposed on the TFT, a color filter disposed on the first passivation layer, and a second passivation layer disposed on the color filter. The display layer may include a first electrode disposed on the second passivation layer, a third passivation layer disposed on the first electrode, a second electrode disposed on the third passivation layer and connected to the TFT, and an optical layer disposed between the first and the second substrates. The light blocking pattern may be disposed on the third passivation layer. The sensing line may be disposed on the light blocking pattern.

公开(公告)号：US20170336680A1

公开(公告)日：2017-11-23

申请号：US15452407

申请日：2017-03-07

Applicant: Samsung Display Co., Ltd.

Inventor： Seung Hyun Park ,  Jun Ho Song ,  Jean Ho Song ,  Jae Hak Lee

IPC: G02F1/1343 ,  G02F1/133 ,  G02F1/1337 ,  G02F1/1362 ,  G02F1/1333

CPC classification number: H01L33/38 ,  G02F1/13306 ,  G02F1/133345 ,  G02F1/133707 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/1362 ,  G02F1/136286 ,  G02F2001/134345 ,  G02F2001/136231 ,  G02F2201/121 ,  G02F2201/123 ,  H01L27/14692 ,  H01L29/66742 ,  H01L29/7394 ,  H01L29/786 ,  H01L29/78618 ,  H01L33/36 ,  H01L51/5203 ,  H01L51/5209

Abstract: A display substrate is provided. The display substrate includes a gate electrode disposed on a base; a gate insulating layer disposed on the base and covering the gate electrode; a semiconductor layer disposed on the gate insulating layer and overlapping the gate electrode; a source electrode and a drain electrode disposed on the semiconductor layer and connected to the semiconductor layer; a pixel electrode disposed on the gate insulating layer, connected to the drain electrode, and extending from the drain electrode; a common electrode insulated from the pixel electrode and overlapping the pixel electrode; and a semiconductor pattern disposed between the gate insulating layer and the pixel electrode, the semiconductor pattern overlapping the pixel electrode. The semiconductor pattern comprises a same material as the semiconductor layer and extends from the semiconductor layer.

公开(公告)号：US09599845B2

公开(公告)日：2017-03-21

申请号：US14180759

申请日：2014-02-14

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Sung Man Kim ,  Duk-Sung Kim ,  Man Hong Na ,  Jun Ho Song ,  Young Je Cho

IPC: G02F1/135 ,  G02F1/133 ,  G02F1/1343 ,  G02F1/1345 ,  G02F1/139 ,  G02F1/1362

CPC classification number: G02F1/13306 ,  G02F1/133707 ,  G02F1/134363 ,  G02F1/13439 ,  G02F1/1345 ,  G02F1/1396 ,  G02F2001/134372 ,  G02F2001/136231

Abstract: A liquid crystal display includes a plurality of pixel electrodes and common electrodes disposed on a first substrate that overlap each other with a passivation layer interposed therebetween, and a connection portion disposed between a common voltage applying unit and the common electrode. The common electrode has a plurality of first cutouts, the passivation layer has a plurality of second cutouts, and the first cutout and the second cutout have substantially the same planar shape. The connection portion includes a lower connection portion formed from a same layer as the common electrode, and an upper connection portion disposed on the lower connection portion that includes a low resistance metal.

公开(公告)号：US20150333154A1

公开(公告)日：2015-11-19

申请号：US14808769

申请日：2015-07-24

Applicant: Samsung Display Co., Ltd.

Inventor： Je Hun LEE ,  Jun Ho Song ,  Yun Jong Yeo ,  Hwa Dong Jung

IPC: H01L29/66 ,  H01L29/40 ,  H01L27/12 ,  H01L21/268 ,  H01L21/308 ,  H01L21/02 ,  H01L29/786 ,  H01L21/28

CPC classification number: H01L29/66742 ,  H01L21/02205 ,  H01L21/2686 ,  H01L21/28247 ,  H01L21/3086 ,  H01L27/1214 ,  H01L29/0847 ,  H01L29/401 ,  H01L29/42356 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/86

Abstract: The present invention relates to a thin film transistor, a thin film transistor array panel, and a manufacturing method thereof. A thin film transistor according to an exemplary embodiments of the present invention includes: a gate electrode; a gate insulating layer positioned on or under the gate electrode; a channel region overlapping the gate electrode, the gate insulating layer interposed between the channel region and the gate electrode; and a source region and a drain region, facing each other with respect to the channel region, positioned in the same layer as the channel region, and connected to the channel region, wherein the channel region, the source region, and the drain region comprise an oxide semiconductor, and wherein a carrier concentration of the source region and the drain region is larger than a carrier concentration of the channel region.

Abstract translation: 本发明涉及薄膜晶体管，薄膜晶体管阵列面板及其制造方法。 根据本发明的示例性实施例的薄膜晶体管包括：栅电极; 位于栅极电极上或下方的栅极绝缘层; 与所述栅电极重叠的沟道区，位于所述沟道区与所述栅电极之间的所述栅绝缘层; 以及源极区域和漏极区域，其相对于沟道区域彼此面对，位于与沟道区域相同的层中，并且连接到沟道区域，其中沟道区域，源极区域和漏极区域包括 氧化物半导体，其中源极区域和漏极区域的载流子浓度大于沟道区域的载流子浓度。

公开(公告)号：US09142682B2

公开(公告)日：2015-09-22

申请号：US13826905

申请日：2013-03-14

Applicant: Samsung Display Co., Ltd.

Inventor： Je Hun Lee ,  Ji Hun Lim ,  Jun Ho Song

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/66969 ,  H01L29/78696

Abstract: A thin film transistor and a manufacturing method thereof. The thin film transistor includes: a gate electrode; a gate insulating layer disposed on the gate electrode; a first semiconductor disposed on the gate insulating layer; a second semiconductor disposed on the first semiconductor and having a different plane shape from the first semiconductor; and a source electrode and a drain electrode that are disposed on the second semiconductor and face each other.

Abstract translation: 一种薄膜晶体管及其制造方法。 薄膜晶体管包括：栅电极; 设置在栅电极上的栅极绝缘层; 设置在所述栅极绝缘层上的第一半导体; 设置在所述第一半导体上并且具有与所述第一半导体不同的平面形状的第二半导体; 以及设置在第二半导体上并且彼此面对的源电极和漏电极。