公开(公告)号：US08586481B2

公开(公告)日：2013-11-19

申请号：US13105658

申请日：2011-05-11

申请人： You Wang ,  Wen-Chiang Tu ,  Feng Q. Liu ,  Yuchun Wang ,  Lakshmanan Karuppiah ,  William H. McClintock ,  Barry L. Chin

发明人： You Wang ,  Wen-Chiang Tu ,  Feng Q. Liu ,  Yuchun Wang ,  Lakshmanan Karuppiah ,  William H. McClintock ,  Barry L. Chin

IPC分类号： H01L21/302

CPC分类号： H01L21/3212 ,  B24B37/044 ,  C09G1/04 ,  H01L21/7684

摘要： Embodiments described herein relate to removing material from a substrate. More particularly, the embodiments described herein relate to polishing or planarizing a substrate by a chemical mechanical polishing process. In one embodiment, a method of chemical mechanical polishing (CMP) of a substrate is provided. The method comprises exposing a substrate having a conductive material layer formed thereon to a polishing solution comprising phosphoric acid, one or more chelating agents, one or more corrosion inhibitors, and one or more oxidizers, forming a passivation layer on the conductive material layer, providing relative motion between the substrate and a polishing pad and removing at least a portion of the passivation layer to expose a portion of the underlying conductive material layer, and removing a portion of the exposed conductive material layer.

摘要翻译： 本文所述的实施例涉及从衬底去除材料。 更具体地，本文所述的实施例涉及通过化学机械抛光工艺抛光或平面化基板。 在一个实施例中，提供了基板的化学机械抛光（CMP）的方法。 该方法包括将其上形成有导电材料层的基底暴露于包含磷酸，一种或多种螯合剂，一种或多种腐蚀抑制剂和一种或多种氧化剂的抛光溶液，在导电材料层上形成钝化层，提供 衬底和抛光垫之间的相对运动，并去除钝化层的至少一部分以暴露下面的导电材料层的一部分，以及去除暴露的导电材料层的一部分。

公开(公告)号：US08293328B2

公开(公告)日：2012-10-23

申请号：US11470915

申请日：2006-09-07

申请人： Ling Chen ,  Hua Chung ,  Barry L. Chin ,  Hong Zhang

发明人： Ling Chen ,  Hua Chung ,  Barry L. Chin ,  Hong Zhang

IPC分类号： C23C16/00

CPC分类号： H01L21/28562 ,  C23C16/34 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/45504 ,  C23C16/45508 ,  C23C16/45512 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45563 ,  C23C16/45582 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76871

摘要： A method for depositing a refractory metal nitride barrier layer having a thickness of about 20 angstroms or less is provided. In one aspect, the refractory metal nitride layer is formed by introducing a pulse of a metal-containing compound followed by a pulse of a nitrogen-containing compound. The refractory metal nitride barrier layer provides adequate barrier properties and allows the grain growth of the first metal layer to continue across the barrier layer into the second metal layer thereby enhancing the electrical performance of the interconnect.

摘要翻译： 提供了一种沉积具有约20埃或更小厚度的难熔金属氮化物阻挡层的方法。 一方面，难熔金属氮化物层是通过引入含金属化合物的脉冲，随后是含氮化合物的脉冲而形成的。 难熔金属氮化物阻挡层提供了足够的阻挡性能，并且允许第一金属层的晶粒生长继续穿过阻挡层进入第二金属层，从而增强了互连的电性能。

公开(公告)号：US20110294293A1

公开(公告)日：2011-12-01

申请号：US13105658

申请日：2011-05-11

申请人： You Wang ,  Wen-Chiang Tu ,  Feng Q. Liu ,  Yuchun Wang ,  Lakshmanan Karuppiah ,  William H. Mc Clintock ,  Barry L. Chin

发明人： You Wang ,  Wen-Chiang Tu ,  Feng Q. Liu ,  Yuchun Wang ,  Lakshmanan Karuppiah ,  William H. Mc Clintock ,  Barry L. Chin

IPC分类号： H01L21/306

CPC分类号： H01L21/3212 ,  B24B37/044 ,  C09G1/04 ,  H01L21/7684

摘要： Embodiments described herein relate to removing material from a substrate. More particularly, the embodiments described herein relate to polishing or planarzing a substrate by a chemical mechanical polishing process. In one embodiment, a method of chemical mechanical polishing (CMP) of a substrate is provided. The method comprises exposing a substrate having a conductive material layer formed thereon to a polishing solution comprising phosphoric acid, one or more chelating agents, one or more corrosion inhibitors, and one or more oxidizers, forming a passivation layer on the conductive material layer, providing relative motion between the substrate and a polishing pad and removing at least a portion of the passivation layer to expose a portion of the underlying conductive material layer, and removing a portion of the exposed conductive material layer.

摘要翻译： 本文所述的实施例涉及从衬底去除材料。 更具体地，本文所述的实施例涉及通过化学机械抛光工艺抛光或平面化衬底。 在一个实施例中，提供了基板的化学机械抛光（CMP）的方法。 该方法包括将其上形成有导电材料层的基底暴露于包含磷酸，一种或多种螯合剂，一种或多种腐蚀抑制剂和一种或多种氧化剂的抛光溶液，在导电材料层上形成钝化层，提供 衬底和抛光垫之间的相对运动，并去除钝化层的至少一部分以暴露下面的导电材料层的一部分，以及去除暴露的导电材料层的一部分。

公开(公告)号：US07660644B2

公开(公告)日：2010-02-09

申请号：US11423535

申请日：2006-06-12

申请人： Barry L. Chin ,  Alfred W. Mak ,  Lawrence Chung-Lai Lei ,  Ming Xi ,  Hua Chung ,  Ken Kaung Lai ,  Jeong Soo Byun

发明人： Barry L. Chin ,  Alfred W. Mak ,  Lawrence Chung-Lai Lei ,  Ming Xi ,  Hua Chung ,  Ken Kaung Lai ,  Jeong Soo Byun

IPC分类号： G06F19/00

CPC分类号： C23C16/45544 ,  C23C16/45525 ,  C23C16/45548 ,  C23C16/45551 ,  C23C16/4583

摘要： A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two or more interconnected deposition regions within the deposition chamber.

摘要翻译： 描述了用于原子层沉积（ALD）的方法和装置。 该装置包括沉积室和晶片支架。 沉积室被分成两个或更多个彼此一体地连接的沉积区域。 晶片支撑件可在沉积室内的两个或更多互连的沉积区域之间移动。

公开(公告)号：US4479831A

公开(公告)日：1984-10-30

申请号：US493769

申请日：1983-06-15

申请人： Peter M. Sandow ,  Barry L. Chin

发明人： Peter M. Sandow ,  Barry L. Chin

IPC分类号： H01L21/20 ,  H01L21/28 ,  H01L21/336 ,  H01L21/84 ,  H01L29/49 ,  H01L21/263 ,  H01L7/54

CPC分类号： H01L29/66575 ,  H01L21/2022 ,  H01L21/28035 ,  H01L21/84 ,  H01L29/4916

摘要： In the disclosed method, a transistor is fabricated by depositing an unpatterned layer of silicon on an insulating layer over a surface of a semiconductor substrate, with the silicon layer being deposited in an amorphous state to improve its uniformity in thickness and smoothness. Subsequently, while the silicon layer is still in the amorphous state, it is patterned by removing selected portions to form a gate. This patterning in the amorphous state improves the gates edge definition. Thereafter, the patterned amorphous silicon layer is heated to change it to polycrystalline silicon, thereby increasing its stability and conductivity.

摘要翻译： 在所公开的方法中，通过在半导体衬底的表面上的绝缘层上沉积未图案化的硅层来制造晶体管，其中硅层以非晶状态沉积，以提高其厚度和平滑度的均匀性。 随后，当硅层仍处于非晶状态时，通过去除所选择的部分形成栅极来对其进行构图。 在非晶状态下的图形化改善了栅极边缘的定义。 此后，加热图案化的非晶硅层以将其改变为多晶硅，由此增加其稳定性和导电性。

公开(公告)号：US07081271B2

公开(公告)日：2006-07-25

申请号：US10199419

申请日：2002-07-18

申请人： Hua Chung ,  Ling Chen ,  Barry L. Chin

发明人： Hua Chung ,  Ling Chen ,  Barry L. Chin

IPC分类号： C23C16/34

CPC分类号： C23C16/45531 ,  C23C16/34 ,  H01L21/28562 ,  H01L21/76843

摘要： Embodiments of the invention relate to an apparatus and method of cyclical layer deposition utilizing three or more precursors. In one embodiment, the method includes providing at least one cycle of precursors to form a ternary material layer. Providing at least one cycle of precursors includes introducing a pulse of a first precursor, introducing a pulse of a second precursor, and introducing a pulse of a third precursor, wherein the pulses of two of the three precursors are introduced simultaneously or sequentially. In another embodiment, the method includes introducing a pulse of a first precursor, introducing a pulse of a second precursor, repeating the introduction of the first and the second precursors at least one time to form a binary material layer on the substrate surface, and introducing a pulse of a third precursor to form the ternary material layer.

摘要翻译： 本发明的实施例涉及利用三种或更多种前体的循环层沉积的装置和方法。 在一个实施方案中，该方法包括提供至少一个循环的前体以形成三元材料层。 提供至少一个前体循环包括引入第一前体的脉冲，引入第二前体的脉冲，以及引入第三前体的脉冲，其中三个前体中的两个的脉冲同时或顺序地引入。 在另一个实施例中，该方法包括引入第一前体的脉冲，引入第二前体的脉冲，至少一次重复引入第一和第二前体，以在衬底表面上形成二元材料层，并引入 形成三元材料层的第三前体的脉冲。

公开(公告)号：US5882417A

公开(公告)日：1999-03-16

申请号：US775857

申请日：1996-12-31

申请人： Everhardus P. van de Ven ,  Eliot K. Broadbent ,  Jeffrey C. Benzing ,  Barry L. Chin ,  Christopher W. Burkhart ,  Lawrence C. Lane ,  Edward John McInerney

发明人： Everhardus P. van de Ven ,  Eliot K. Broadbent ,  Jeffrey C. Benzing ,  Barry L. Chin ,  Christopher W. Burkhart ,  Lawrence C. Lane ,  Edward John McInerney

IPC分类号： C30B25/12 ,  C23C16/04 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/54 ,  C30B25/14 ,  H01L21/00 ,  H01L21/205 ,  H01L21/285 ,  H01L21/31 ,  H01L21/683 ,  H01L21/687 ,  C23C16/00

CPC分类号： C23C16/45519 ,  C23C16/04 ,  C23C16/455 ,  C23C16/45521 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/54 ,  H01L21/67017 ,  H01L21/67109 ,  H01L21/6838 ,  H01L21/68735 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68785

摘要： A platen supports a wafer during the deposition of tungsten, metal nitrides, other metals, and silicides in a chemicalvapor deposition reactor. A deposition control gas that includes a suitable inert gas such as argon or a mixture of inert and reactant gases such as argon and hydrogen is introduced through a restrictive opening into an ambient in the reactor. An exclusion guard aligned with the platen has an extension extending over a frontside peripheral region of the wafer. Deposition control gas is introduced under the exclusion guard extension and exits through a restrictive opening between the exclusion guard extension and a wafer frontside peripheral region. The restrictive opening provides a uniform pressure of deposition control gas at the edge and frontside of the wafer to prevent deposition on the wafer edge and backside.

摘要翻译： 压板在化学气相沉积反应器中沉积钨，金属氮化物，其它金属和硅化物期间支撑晶片。 包括合适的惰性气体如氩气或惰性气体和反应气体如氩气和氢气的混合物的沉积控制气体通过限制性开口引入反应器中的环境中。 与压板对准的排除保护罩具有在晶片的前侧周边区域上延伸的延伸部。 沉积控制气体被引入排阻护延伸部分，并通过排除保护延伸部和晶片正面周边区域之间的限制开口排出。 限制开口在晶片的边缘和前侧提供均匀的沉积控制气体压力，以防止沉积在晶片边缘和背面。

公开(公告)号：US5620525A

公开(公告)日：1997-04-15

申请号：US294513

申请日：1994-08-23

申请人： Everhardus P. van de Ven ,  Eliot K. Broadbent ,  Jeffrey C. Benzing ,  Barry L. Chin ,  Christopher W. Burkhart

发明人： Everhardus P. van de Ven ,  Eliot K. Broadbent ,  Jeffrey C. Benzing ,  Barry L. Chin ,  Christopher W. Burkhart

IPC分类号： C23C16/04 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/54 ,  H01L21/00 ,  H01L21/205 ,  H01L21/28 ,  H01L21/285 ,  H01L21/31 ,  H01L21/683 ,  H01L21/687 ,  C23C16/00

CPC分类号： C23C16/45521 ,  C23C16/04 ,  C23C16/4401 ,  C23C16/455 ,  C23C16/45519 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/54 ,  H01L21/67017 ,  H01L21/67109 ,  H01L21/6838 ,  H01L21/68735 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68785

摘要： A platen supports a substrate on an interior platen region during the deposition of materials such as tungsten, metal nitrides, other metals, and silicides in a chemical vapor deposition ("CCVD") reactor. A deposition control gas composed of a suitable inert gas such as argon or a mixture of inert and reactive gases such as argon and hydrogen is introduced into the CVD reactor. Deposition control gas is preferably introduced through a restrictive opening in a gas orifice surrounding the platen interior region and exits near an edge of the substrate. The restrictive opening accommodates a uniform deposition control gas flow proximate to an edge of the substrate at a pressure greater than reactor pressure near the substrate edge. The deposition control gas substantially prevents process gas access to the substrate edge and backside. In one embodiment, the restrictive opening is formed by placing a restrictive insert within a gas groove surrounding the platen interior region. In another embodiment, the restrictive opening is formed by an exclusion guard substantially uniformly spaced from the edge of the substrate.

摘要翻译： 在化学气相沉积（“CCVD”）反应器中，在诸如钨，金属氮化物，其它金属和硅化物的材料沉积期间，压板支撑在内部压板区域上的衬底。 由合适的惰性气体如氩气或惰性气体和反应性气体如氩气和氢气的混合物组成的沉积控制气体被引入到CVD反应器中。 沉积控制气体优选通过围绕压板内部区域的气体孔口中的限制性开口引入并离开基板的边缘附近。 限制开口在靠近基板边缘的压力大于反应器压力的情况下，容纳靠近基板边缘的均匀沉积控制气流。 沉积控制气体基本上防止工艺气体进入衬底边缘和背面。 在一个实施例中，限制性开口通过将限制性插入物放置在围绕压板内部区域的气体槽中而形成。 在另一个实施方案中，限制性开口由与衬底的边缘基本上均匀间隔开的排除保护膜形成。

公开(公告)号：US5238499A

公开(公告)日：1993-08-24

申请号：US678579

申请日：1991-03-25

申请人： Everhardus P. van de Ven ,  Eliot K. Broadbent ,  Jeffrey C. Benzing ,  Barry L. Chin ,  Christopher W. Burkhart

发明人： Everhardus P. van de Ven ,  Eliot K. Broadbent ,  Jeffrey C. Benzing ,  Barry L. Chin ,  Christopher W. Burkhart

IPC分类号： H01L21/205 ,  C23C16/04 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/54 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/683 ,  H01L21/687

CPC分类号： C23C16/45521 ,  C23C16/04 ,  C23C16/455 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/54 ,  H01L21/67017 ,  H01L21/67109 ,  H01L21/6838 ,  H01L21/68742 ,  H01L21/68764 ,  H01L21/68771 ,  Y10T29/41

摘要： A suitable inert gas such as argon or a mixture of inert and reactive gases such as argon and hydrogen is introduced onto the backside of wafers being processed in a CVD reactor during the deposition of tungsten or other metals, metal nitrides and silicides, to avoid deposition of material on the backside of the wafers being processed. Each process station includes a gas dispersion head disposed over a platen. A vacuum chuck including a number of radial and circular vacuum grooves in the top surface of the platen is provided for holding the wafer in place. A platen heater is provided under the platen. Backside gas is heated in and about the bottom of the platen, and introduced through a circular groove in the peripheral region outside of the outermost vacuum groove of the vacuum chuck. Backside gas pressure is maintained in this peripheral region at a level greater than the CVD chamber pressure. In this manner, backside gas vents from beneath the edge of the wafer on the platen and prevents the process gas from contacting the wafer backside. If the process gas is also to be prevented from contacting the periphery of the wafer frontside, a shroud is urged against the platen to direct the backside gas into a cavity formed between the shroud and the platen. This cavity contains the wafer frontside periphery, so that backside gas venting from between the shroud and the wafer frontside periphery excludes the process gas.