公开(公告)号：US07209306B2

公开(公告)日：2007-04-24

申请号：US10477916

申请日：2003-03-12

Applicant: Osamu Nakamura

Inventor： Osamu Nakamura

IPC: G11B5/09

CPC classification number: G11B20/1883 ,  G11B5/00813 ,  G11B5/0086 ,  G11B15/087 ,  G11B20/10 ,  G11B20/1208 ,  G11B27/107 ,  G11B27/11 ,  G11B27/3027 ,  G11B27/3063 ,  G11B2220/655 ,  G11B2220/90

Abstract: As a tape recording format, tracks are formed by a succession of block units, and a data unit called a group is formed by data of size equivalent to a predetermined plurality of tracks. Using this format, a base group number indicating the group to which the current track physically belongs is recorded in the ID information for a track, and the lower four bits or similar of a group number indicating the group to which the current block logically belongs is recorded within a block. By this means, even if rewriting is performed in block units and a recorded state results in which the blocks of a plurality of groups are intermixed within a track, the group to which each block belongs can be correctly identified during reproduction.

Abstract translation: 作为磁带记录格式，通过一系列块单元形成轨迹，并且称为组的数据单元由等同于预定多个磁道的大小的数据形成。 使用该格式，表示当前轨道物理上属于的组的基组号被记录在轨道的ID信息中，并且指示当前块逻辑上属于的组的组号的低四位或类似值是 记录在一个块内。 通过这种方式，即使以块为单位执行重写，并且记录状态导致多个组中的块被混合在轨道内，则可以在再现期间正确地识别每个块所属的组。

公开(公告)号：US20060237397A1

公开(公告)日：2006-10-26

申请号：US11471494

申请日：2006-06-21

Applicant: Shunpei Yamazaki ,  Osamu Nakamura ,  Hironobu Shoji ,  Koichiro Tanaka

Inventor： Shunpei Yamazaki ,  Osamu Nakamura ,  Hironobu Shoji ,  Koichiro Tanaka

IPC: H01L21/36 ,  B23K26/00

CPC classification number: H01L21/02683 ,  B23K26/0604 ,  B23K26/0608 ,  B23K26/064 ,  B23K26/0643 ,  B23K26/0648 ,  B23K26/0665 ,  B23K26/12 ,  B23K26/123 ,  B23K26/127 ,  H01L21/2026 ,  H01L21/268 ,  H01L29/66757

Abstract: According to the present invention, oxygen and nitrogen are effectively prevented from mixing into the semiconductor film by doping Ar or the like in the semiconductor film in advance, and by irradiating the laser light in the atmosphere of Ar or the like. Therefore, the variation of the impurity concentration due to the fluctuation of the energy density can be suppressed and the variation of the mobility of the semiconductor film can be also suppressed. Moreover, in TFT formed with the semiconductor film, the variation of the on-current in addition to the mobility can be also suppressed. Furthermore, in the present invention, the first laser light converted into the harmonic easily absorbed in the semiconductor film is irradiated to melt the semiconductor film and to increase the absorption coefficient of the fundamental wave.

Abstract translation: 根据本发明，通过预先在半导体膜中掺杂Ar等，并且通过在Ar等的气氛中照射激光来有效地防止氧和氮混入半导体膜。 因此，可以抑制由于能量密度的波动引起的杂质浓度的变化，并且还可以抑制半导体膜的迁移率的变化。 此外，在由半导体膜形成的TFT中，还可以抑制导通电流的变化，同时也抑制迁移率。 此外，在本发明中，照射转换为在半导体膜中容易吸收的谐波的第一激光以熔化半导体膜并增加基波的吸收系数。

公开(公告)号：US07109684B2

公开(公告)日：2006-09-19

申请号：US10481691

申请日：2003-05-16

Applicant: Hiromi Takaoka ,  Shigetomo Matsui ,  Yutaka Iuchi ,  Taneo Nishino ,  Osamu Nakamura

Inventor： Hiromi Takaoka ,  Shigetomo Matsui ,  Yutaka Iuchi ,  Taneo Nishino ,  Osamu Nakamura

IPC: H02J7/00

CPC classification number: H02J7/041 ,  H02J7/0029 ,  H02J7/0073 ,  H02J7/0078 ,  H02J7/044 ,  H02J2007/0037

Abstract: An equipment and method for charging a secondary battery are provided to quickly and surely charge a secondary battery (secondary batteries) while preventing the secondary battery (batteries) from overcharging or insufficient charging. Special charging voltage Es is applied to a secondary battery for a predetermined time, and then the applied voltage is switched to equilibrium voltage Eeq for establishing equilibrium cell potential of the secondary battery in its fully charged condition, wherein the special charging value Es is larger than the equilibrium value Eeq. Electric current i is detected while application of the equilibrium voltage Eeq. If the detected electric current i is larger than standard electric current J for finishing charging, the above detection and charging are repeated; otherwise, charge of the secondary battery 1 is halted.

Abstract translation: 提供用于对二次电池充电的设备和方法，以便在防止二次电池（电池）过度充电或充电不足的同时快速且可靠地对二次电池（二次电池）充电。 将特殊的充电电压E 施加到二次电池预定时间，然后将施加的电压切换到平衡电压E eq，以建立二次电池的平衡电池电位 电池处于完全充电状态，其中特殊充电值E SUB大于平衡值E eq eq。 在施加平衡电压E eq的情况下检测电流i。 如果检测到的电流i大于用于完成充电的标准电流J，则重复上述检测和充电; 否则，二次电池1的充电被停止。

公开(公告)号：US07085628B2

公开(公告)日：2006-08-01

申请号：US10476973

申请日：2002-11-22

Applicant: Tadahiro Ohmi ,  Tomio Uno ,  Osamu Nakamura ,  Nobukazu Ikeda ,  Ryousuke Dohi ,  Kouji Nishino ,  Atsushi Matsumoto ,  Kazuhiko Sugiyama

Inventor： Tadahiro Ohmi ,  Tomio Uno ,  Osamu Nakamura ,  Nobukazu Ikeda ,  Ryousuke Dohi ,  Kouji Nishino ,  Atsushi Matsumoto ,  Kazuhiko Sugiyama

IPC: G06D23/00

CPC classification number: G05D7/0635 ,  G01D3/022 ,  G01F1/50 ,  G01F15/046 ,  G01L9/025

Abstract: A pressure sensor, a pressure control apparatus, and a flow rate control apparatus are provided to automatically correct temperature drift of the pressure sensor and accurately detect pressure despite changes in temperature. An embodiment includes an upstream side pressure sensor between an orifice and a control valve, to control flow rate through the orifice by a regulating control valve, while calculating the flow from the upstream side pressure. With a temperature sensor, a memory means, and a temperature drift correcting means which calculates drift of the upstream side pressure sensor from data in the memory means when the temperature of the fluid changes and offsets the output drift of the upstream side pressure sensor with the calculated amount of the output drift, temperature drift of the pressure sensor is automatically corrected, enabling accurate control of flow rate.

Abstract translation: 提供压力传感器，压力控制装置和流量控制装置来自动校正压力传感器的温度漂移并且尽管温度变化来精确地检测压力。 一个实施例包括在孔口和控制阀之间的上游侧压力传感器，用于通过调节控制阀控制通过孔口的流量，同时计算从上游侧压力的流量。 利用温度传感器，存储装置和温度漂移校正装置，当流体的温度变化时，上游侧压力传感器的输出漂移与 输出漂移的计算量，压力传感器的温度漂移自动校正，可以精确控制流量。

公开(公告)号：US07067403B2

公开(公告)日：2006-06-27

申请号：US10700516

申请日：2003-11-05

Applicant: Shunpei Yamazaki ,  Osamu Nakamura ,  Hironobu Shoji ,  Koichiro Tanaka

Inventor： Shunpei Yamazaki ,  Osamu Nakamura ,  Hironobu Shoji ,  Koichiro Tanaka

IPC: H01L21/36

CPC classification number: H01L21/02683 ,  B23K26/0604 ,  B23K26/0608 ,  B23K26/064 ,  B23K26/0643 ,  B23K26/0648 ,  B23K26/0665 ,  B23K26/12 ,  B23K26/123 ,  B23K26/127 ,  H01L21/2026 ,  H01L21/268 ,  H01L29/66757

Abstract: According to the present invention, oxygen and nitrogen are effectively prevented from mixing into the semiconductor film by doping Ar or the like in the semiconductor film in advance, and by irradiating the laser light in the atmosphere of Ar or the like. Therefore, the variation of the impurity concentration due to the fluctuation of the energy density can be suppressed and the variation of the mobility of the semiconductor film can be also suppressed. Moreover, in TFT formed with the semiconductor film, the variation of the on-current in addition to the mobility can be also suppressed. Furthermore, in the present invention, the first laser light converted into the harmonic easily absorbed in the semiconductor film is irradiated to melt the semiconductor film and to increase the absorption coefficient of the fundamental wave.

公开(公告)号：US07026764B2

公开(公告)日：2006-04-11

申请号：US10390882

申请日：2003-03-19

Applicant: Osamu Nakamura

Inventor： Osamu Nakamura

IPC: H01J7/24

CPC classification number: B82Y10/00 ,  H01J37/32009 ,  H01J37/3255

Abstract: An object of the present invention is to provide an apparatus for producing stable plasma. Another object of the present invention is to provide an apparatus having a long-lasting cathode electrode which is superior in field emission characteristic since the plasma density has to be raised in order to increase the throughput. The structure of the plasma producing apparatus of the present invention relates to a plasma producing apparatus with a plasma chamber surrounded by walls to make material gas into plasma, characterized in the plasma chamber has a cathode electrode, an anode electrode, means for introducing the material gas, and exhaust means, and that a carbon nano tube is formed on a surface of the cathode electrode and the anode electrode is formed on the surface of the cathode electrode.

公开(公告)号：US20050276912A1

公开(公告)日：2005-12-15

申请号：US11151003

申请日：2005-06-13

Applicant: Hiroko Yamamoto ,  Osamu Nakamura

Inventor： Hiroko Yamamoto ,  Osamu Nakamura

IPC: B05D3/00 ,  B05D5/12 ,  B29C71/02 ,  B32B3/00 ,  H01L21/28 ,  H01L21/288 ,  H01L21/336 ,  H01L21/768 ,  H01L21/77 ,  H01L29/45 ,  H05K1/09 ,  H05K3/12

CPC classification number: H01L21/76838 ,  H01L21/28008 ,  H01L21/28026 ,  H01L21/28079 ,  H01L21/28123 ,  H01L21/288 ,  H01L21/76823 ,  H01L21/76825 ,  H01L21/76894 ,  H01L27/1292 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66765 ,  H01L2224/4847 ,  H01L2924/07811 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/13091 ,  H05K1/095 ,  H05K3/1283 ,  H05K2201/0215 ,  H05K2203/0597 ,  H05K2203/107 ,  H05K2203/1131 ,  Y02P70/605 ,  Y10T428/24917 ,  H01L2924/00

Abstract: The present invention provides a method for forming a wiring having a minute shape on a large substrate with a small number of steps, and further a wiring substrate formed by the method. Moreover, the present invention provides a semiconductor device in which cost reduction and throughput improvement are possible due to the small number of steps and reduction of materials and which has a semiconductor element with a minute structure, and further a manufacturing method thereof. According to the present invention, a composition including metal particles and organic resin is irradiated with laser light and a part of the metal particles is baked to form a conductive layer typified by a wiring, an electrode or the like over a substrate. Further, a semiconductor device having the baked conductive layer as a wiring or an electrode is formed.

Abstract translation: 本发明提供了一种在具有少量步骤的大基板上形成具有微小形状的布线的方法，并且还提供了通过该方法形成的布线基板。 此外，本发明提供一种半导体器件，其中由于少量的步骤和材料的减少以及具有微小结构的半导体元件，成本降低和生产率提高是可能的，并且还提供了其制造方法。 根据本发明，用激光照射包含金属颗粒和有机树脂的组合物，并且将一部分金属颗粒烘烤以形成通过基板上的布线，电极等代表的导电层。 此外，形成具有烘烤的导电层作为布线或电极的半导体器件。

公开(公告)号：US20050258421A1

公开(公告)日：2005-11-24

申请号：US10406591

申请日：2003-04-04

Applicant: Hiroshi Shibata ,  Osamu Nakamura ,  Shunichi Naka ,  Tohru Ueda

Inventor： Hiroshi Shibata ,  Osamu Nakamura ,  Shunichi Naka ,  Tohru Ueda

IPC: G02F1/1368 ,  H01L21/20 ,  H01L21/322 ,  H01L21/336 ,  H01L21/77 ,  H01L29/04 ,  H01L29/786

CPC classification number: H01L21/02672 ,  H01L21/02532 ,  H01L21/2022 ,  H01L21/2026 ,  H01L27/1214 ,  H01L27/1274 ,  H01L29/04 ,  H01L29/66757

Abstract: The problem is to provide a technology to reduce a light leakage current in order to obtain a good display. One kind or plurality kinds of elements chosen from argon, germanium, silicon, helium, neon, krypton, and xenon are implanted in a crystalline semiconductor layer, to distribute crystal defects due to the aforementioned element implantation by uniform and suitable density in the semiconductor film, making recombination centers of carriers, to thereby suppress alight sensitivity without spoiling a high degree of carrier movement included in a crystalline semiconductor layer.

Abstract translation: 问题在于提供减少漏光电流的技术，以获得良好的显示。 将选自氩，锗，硅，氦，氖，氪和氙的一种或多种元素注入晶体半导体层中，以通过均匀且适当的密度在半导体膜中分配由于上述元素注入引起的晶体缺陷 ，使载流子的复合中心，从而抑制光敏灵敏度而不破坏包括在晶体半导体层中的高度的载流子移动。

公开(公告)号：US06967803B2

公开(公告)日：2005-11-22

申请号：US10478070

申请日：2003-03-13

Applicant: Osamu Nakamura

Inventor： Osamu Nakamura

IPC: G11B5/008 ,  G11B15/087 ,  G11B15/18 ,  G11B15/467 ,  G11B20/10 ,  G11B20/12 ,  G11B20/18 ,  G11B27/30 ,  G11B17/00

CPC classification number: G11B5/0086 ,  G11B5/00878 ,  G11B15/087 ,  G11B15/1875 ,  G11B15/4671 ,  G11B20/10 ,  G11B20/18 ,  G11B27/3027 ,  G11B27/3063 ,  G11B2220/90

Abstract: When the data recording is performed on a magnetic tape in various recording densities, information relating to the recording density (recording-density related information) is recorded in the data recorded on the magnetic tape. Accordingly, recording and reproduction can be properly managed by referring to the recording-density related information, even if data in various recording densities are recorded on the same magnetic tape.Further, when the recording density is altered, the drive apparatus side switches over the recording density in accordance with the quality of recording data. Thus, in the case where the data writing is not possible due to a recording error, the recording density is switched over to a lower recording density to record the data without an error, and therefore a higher flexibility is provided to a data format to be recorded on the magnetic tape.

Abstract translation: 当以各种记录密度在磁带上进行数据记录时，将与记录密度有关的信息（记录密度相关信息）记录在记录在磁带上的数据中。 因此，即使在同一磁带上记录各种记录密度的数据，也可以通过参考记录密度相关信息适当地管理记录和再现。 此外，当记录密度改变时，驱动装置侧根据记录数据的质量切换记录密度。 因此，在由于记录错误而不能进行数据写入的情况下，将记录密度切换到较低的记录密度以便无误地记录数据，因此对数据格式提供更高的灵活性 记录在磁带上。

公开(公告)号：US06964279B2

公开(公告)日：2005-11-15

申请号：US10469151

申请日：2002-11-22

Applicant: Tadahiro Ohmi ,  Tomio Uno ,  Osamu Nakamura ,  Nobukazu Ikeda ,  Ryousuke Dohi ,  Kouji Nishino ,  Atsushi Matsumoto ,  Kazuhiko Sugiyama ,  Shujiro Inui ,  Taiji Sakai ,  Masanori Ueyama

Inventor： Tadahiro Ohmi ,  Tomio Uno ,  Osamu Nakamura ,  Nobukazu Ikeda ,  Ryousuke Dohi ,  Kouji Nishino ,  Atsushi Matsumoto ,  Kazuhiko Sugiyama ,  Shujiro Inui ,  Taiji Sakai ,  Masanori Ueyama

IPC: G01F1/00 ,  G01F1/36 ,  G01F1/42 ,  G05D7/06

CPC classification number: G05D7/0635 ,  Y10T137/7759 ,  Y10T137/7761

Abstract: A pressure-type flow rate control apparatus controls the flow rate of fluid passing through an orifice to a target flow rate. The flow rate of a compressible fluid under non-critical conditions (sub-sonic) passing through the orifice is calculated by: Qc=KP2m(P1−P2)n so that the flow rate can be controlled to the target flow rate with high precision and speed. Also provided is an improved pressure-type flow rate control apparatus in which a pressure ratio P2/P1=r, obtained from an upstream pressure P1 and a downstream pressure P2 is constantly compared with a critical value r, and under critical conditions (r≦rc), the flow rate is calculated by: Qc=KP1. Under non-critical conditions (r>rc), the flow rate is calculated by Qc=KP2m(P1−P2)n.

Abstract translation: 压力式流量控制装置将通过孔口的流体的流量控制为目标流量。 通过孔口的非临界条件（亚音）的可压缩流体的流量通过以下公式计算：<？in-line-formula description =“In-line Formulas”end =“lead”？> Qc = KP （P 1→P 2） -formulae description =“在线公式”end =“tail”？>，可以以高精度和高速度将流量控制在目标流量上。 还提供了一种改进的压力型流量控制装置，其中从上游压力P 1获得的压力比P 2 / P 1 / / SUB>和下游压力P 2 2不断与临界值r进行比较，在临界条件（r≤Rc c）下，流量由下式计算： ：<？in-line-formula description =“In-line Formulas”end =“lead”？> Qc = KP <1> <？in-line-formula description =“In-line Formulas” end =“tail”？>在非关键条件下（r> r> c ），流量通过Qc = KP 2 / （P 1→P 2）。