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    Method of manufacturing fine T-shaped electrode
    42.
    发明授权
    Method of manufacturing fine T-shaped electrode 有权
    制造精细T型电极的方法

    公开(公告)号：US07923198B2

    公开(公告)日：2011-04-12

    申请号：US11055097

    申请日：2005-02-11

    申请人： Ken Sawada

    发明人： Ken Sawada

    IPC分类号： H01L21/02 ,  G03F7/40

    CPC分类号： H01L21/28587 ,  H01L29/42316

    摘要： A method of manufacturing a fine T-shaped electrode includes a step of forming a laminated resist which includes at least a photoresist layer as an uppermost layer; a step of forming an uppermost layer opening by irradiating the laminated resist with light to pattern only the photo resist layer and form an uppermost layer opening; a step of reducing the diameter of the uppermost layer opening by coating a resist pattern thickening material on the photoresist layer; a step of forming a lowermost layer opening by transferring the uppermost layer opening formed in the photoresist layer to a lower layer of the photoresist, and penetrating the laminated resist; a step of reducing the size of the lowermost opening in the lowermost layer of the laminated resist; and a step of forming a T-shaped electrode in the opening part formed through the laminated resist.

    摘要翻译： 一种精细T型电极的制造方法包括形成至少包含光致抗蚀剂层作为最上层的层叠抗蚀剂的工序; 通过用光照射层叠的抗蚀剂来形成最上层开口的步骤，以仅图案地形成光致抗蚀剂层并形成最上层的开口; 通过在抗蚀剂层上涂布抗蚀剂图案增厚材料来减小最上层开口的直径的步骤; 通过将形成在光致抗蚀剂层中的最上层开口转移到光致抗蚀剂的下层并穿透层叠的抗蚀剂来形成最下层开口的步骤; 降低层叠抗蚀剂的最下层的最下面开口尺寸的步骤; 以及在通过层叠的抗蚀剂形成的开口部中形成T形电极的步骤。

    Method of processing resist, semiconductor device, and method of producing the same
    43.
    发明申请
    Method of processing resist, semiconductor device, and method of producing the same 有权

    公开(公告)号：US20100187576A1

    公开(公告)日：2010-07-29

    申请号：US12659970

    申请日：2010-03-26

    申请人： Kozo Makiyama ,  Ken Sawada

    发明人： Kozo Makiyama ,  Ken Sawada

    IPC分类号： H01L29/808

    CPC分类号： G03F7/40 ,  H01L21/0273 ,  H01L21/28114 ,  H01L21/76802 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A surface component film (2) is etched using a resist (3) as a mask, and the surface component film (2) is patterned according to the shape of an aperture (3a). This results in a step portion (4) having the same shape as the aperture (3a), with the sidewall (4a) of the step portion (4) exposed through the aperture (3a). The aperture (3a) is spin-coated with a shrink agent, reacted at a first temperature, and developed to shrink the aperture (3a). To control the shrinkage with high accuracy, in the first round of reaction, the aperture is shrunk by, for example, about half of the desired shrinkage. The aperture (3a) is further spin-coated with a shrink agent, reacted at a second temperature, and developed to shrink the aperture (3a). In this embodiment, the second-round shrink process will result in the desired aperture length. The second temperature is adjusted based on the shrinkage in the first round. With respect to a resist using short-wavelength light (short-wavelength resist) or a resist using electron beam (electron beam resist), a minute aperture can be obtained with stable shrink effect and accurate control of the length thereof.

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
    44.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20090261423A1

    公开(公告)日：2009-10-22

    申请号：US12423287

    申请日：2009-04-14

    申请人： Ken Sawada

    发明人： Ken Sawada

    IPC分类号： H01L27/105 ,  H01L21/8232

    CPC分类号： H01L29/785 ,  H01L29/66795

    摘要： A semiconductor device includes a fin field effect transistor configured to include at least a first fin and a second fin. Threshold voltage of the first fin and threshold voltage of the second fin are different from each other in the fin field effect transistor.

    摘要翻译： 半导体器件包括鳍状场效应晶体管，其被配置为至少包括第一鳍片和第二鳍片。 在鳍式场效应晶体管中，第一鳍的阈值电压和第二鳍的阈值电压彼此不同。

    Method of processing resist, semiconductor device, and method of producing the same
    45.
    发明申请
    Method of processing resist, semiconductor device, and method of producing the same 有权
    抗蚀剂的加工方法，半导体装置及其制造方法

    公开(公告)号：US20050255696A1

    公开(公告)日：2005-11-17

    申请号：US11185807

    申请日：2005-07-21

    申请人： Kozo Makiyama ,  Ken Sawada

    发明人： Kozo Makiyama ,  Ken Sawada

    IPC分类号： G03F7/40 ,  H01L21/027 ,  H01L21/28 ,  H01L21/768 ,  H01L21/00 ,  H01L21/469 ,  H01L21/4763

    CPC分类号： G03F7/40 ,  H01L21/0273 ,  H01L21/28114 ,  H01L21/76802 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A surface component film (2) is etched using a resist (3) as a mask, and the surface component film (2) is patterned according to the shape of an aperture (3a). This results in a step portion (4) having the same shape as the aperture (3a), with the sidewall (4a) of the step portion (4) exposed through the aperture (3a). The aperture (3a) is spin-coated with a shrink agent, reacted at a first temperature, and developed to shrink the aperture (3a). To control the shrinkage with high accuracy, in the first round of reaction, the aperture is shrunk by, for example, about half of the desired shrinkage. The aperture (3a) is further spin-coated with a shrink agent, reacted at a second temperature, and developed to shrink the aperture (3a). In this embodiment, the second-round shrink process will result in the desired aperture length. The second temperature is adjusted based on the shrinkage in the first round. With respect to a resist using short-wavelength light (short-wavelength resist) or a resist using electron beam (electron beam resist), a minute aperture can be obtained with stable shrink effect and accurate control of the length thereof.

    摘要翻译： 使用抗蚀剂（3）作为掩模蚀刻表面成分膜（2），根据孔（3a）的形状对表面成分膜（2）进行图案化。 这导致步骤部分（4）具有与孔（3a）相同的形状，台阶部分（4）的侧壁（4a）通过孔（3a）暴露。 将孔（3a）旋转涂覆有收缩剂，在第一温度下反应并显影以收缩孔（3a）。 为了高精度地控制收缩，在第一轮反应中，孔径例如缩小了所需收缩的大约一半。 将孔（3a）进一步用收缩剂进行旋涂，在第二温度下反应并显影以收缩孔（3a）。 在该实施例中，第二次收缩过程将导致期望的孔径长度。 第二个温度根据第一轮的收缩率进行调整。 对于使用短波长光（短波长抗蚀剂）的抗蚀剂或使用电子束（电子束抗蚀剂）的抗蚀剂，可以获得具有稳定的收缩效果和其长度的精确控制的微小孔径。

    Resist pattern forming method and semiconductor device fabrication method
    46.
    发明申请
    Resist pattern forming method and semiconductor device fabrication method 有权
    抗蚀剂图案形成方法和半导体器件制造方法

    公开(公告)号：US20050069813A1

    公开(公告)日：2005-03-31

    申请号：US10804179

    申请日：2004-03-19

    申请人： Ken Sawada ,  Kozo Makiyama

    发明人： Ken Sawada ,  Kozo Makiyama

    IPC分类号： G03F7/40 ,  G03C5/00 ,  G03F7/023 ,  H01L21/027

    CPC分类号： G03F7/40 ,  G03F7/023

    摘要： A photoresist film 12 is formed on a substrate 10. In the photoresist film 12, an opening 13 having higher hydrophilicity and higher affinity with a chemical liquid 16 for swelling the photoresist film at upper part of the sidewall is formed down to the substrate 10. The chemical liquid 16 is reacted with the photoresist film 12 with the opening formed in to swell the photoresist film 16 to thereby reverse-taper the sidewall of the opening. Whereby the photoresist film having an opening diameter beyond a resolution of the photoresist material and the sidewall of the opening reverse-tapered can be easily formed.

    摘要翻译： 光致抗蚀剂膜12形成在基板10上。在光致抗蚀剂膜12中，向基板10向下形成有与侧壁上部的光致抗蚀剂膜膨胀的化学液体16具有较高亲水性和较高亲和性的开口13。 化学液体16与光致抗蚀剂膜12反应，其中形成有开口以使光致抗蚀剂膜16膨胀，从而使开口的侧壁反向锥形化。 由此可以容易地形成具有超过光致抗蚀剂材料的分辨率的开口直径和反向锥形开口的侧壁的光致抗蚀剂膜。

    SOLID-STATE IMAGING DEVICE MANUFACTURING METHOD, SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS
    49.
    发明申请
    SOLID-STATE IMAGING DEVICE MANUFACTURING METHOD, SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS 审中-公开
    固态成像装置制造方法，固态成像装置及电子装置

    公开(公告)号：US20120001290A1

    公开(公告)日：2012-01-05

    申请号：US13231544

    申请日：2011-09-13

    申请人： Ken Sawada

    发明人： Ken Sawada

    IPC分类号： H01L27/146 ,  H01L31/101

    CPC分类号： H01L27/14645 ,  H01L27/1461 ,  H01L27/14656 ,  H01L27/14689

    摘要： A solid-state imaging device that includes: a semiconductor substrate having a recess portion formed on a top surface thereof; an impurity region of a first conductivity type formed in a portion of the semiconductor substrate disposed lower than a bottom surface of the recess portion; and a semiconductor layer of the first conductivity type formed in the recess portion, wherein the impurity region and the semiconductor layer form a photoelectric conversion.

    摘要翻译： 一种固态成像装置，包括：半导体衬底，其具有形成在其顶表面上的凹部; 形成在所述半导体衬底的位于所述凹部的底面的下方的部分的第一导电类型的杂质区域; 以及形成在所述凹部中的所述第一导电类型的半导体层，其中所述杂质区域和所述半导体层形成光电转换。

    Method of processing resist, semiconductor device, and method of producing the same
    50.
    发明申请
    Method of processing resist, semiconductor device, and method of producing the same 有权

    公开(公告)号：US20100190346A1

    公开(公告)日：2010-07-29

    申请号：US12659976

    申请日：2010-03-26

    申请人： Kozo Makiyama ,  Ken Sawada

    发明人： Kozo Makiyama ,  Ken Sawada

    IPC分类号： H01L21/311

    CPC分类号： G03F7/40 ,  H01L21/0273 ,  H01L21/28114 ,  H01L21/76802 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A surface component film (2) is etched using a resist (3) as a mask, and the surface component film (2) is patterned according to the shape of an aperture (3a). This results in a step portion (4) having the same shape as the aperture (3a), with the sidewall (4a) of the step portion (4) exposed through the aperture (3a). The aperture (3a) is spin-coated with a shrink agent, reacted at a first temperature, and developed to shrink the aperture (3a). To control the shrinkage with high accuracy, in the first round of reaction, the aperture is shrunk by, for example, about half of the desired shrinkage. The aperture (3a) is further spin-coated with a shrink agent, reacted at a second temperature, and developed to shrink the aperture (3a). In this embodiment, the second-round shrink process will result in the desired aperture length. The second temperature is adjusted based on the shrinkage in the first round. With respect to a resist using short-wavelength light (short-wavelength resist) or a resist using electron beam (electron beam resist), a minute aperture can be obtained with stable shrink effect and accurate control of the length thereof.