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    Structured Illumination for Contrast Enhancement in Overlay Metrology
    41.
    发明申请
    Structured Illumination for Contrast Enhancement in Overlay Metrology 审中-公开

    公开(公告)号：US20170307523A1

    公开(公告)日：2017-10-26

    申请号：US15589801

    申请日：2017-05-08

    Applicant: KLA-Tencor Corporation

    Inventor： Joel Seligson ,  Noam Sapiens ,  Daniel Kandel

    IPC: G01N21/47 ,  G03F7/20 ,  G01B11/02 ,  G01N21/00

    CPC classification number: G01N21/47 ,  G01B11/02 ,  G01N21/00 ,  G03F7/70633

    Abstract: Contrast enhancement in a metrology tool may include generating a beam of illumination, directing a portion of the generated beam onto a surface of a spatial light modulator (SLM), directing at least a portion of the generated beam incident on the surface of the SLM through an aperture of an aperture stop and onto one or more target structures of one or more samples, and generating a selected illumination pupil function of the illumination transmitted through the aperture utilizing the SLM in order to establish a contrast level of one or more field images of the one or more target structures above a selected contrast threshold, and performing one or more metrology measurements on the one or more target structures utilizing the selected illumination pupil function.

    Structured illumination for contrast enhancement in overlay metrology
    42.
    发明授权
    Structured illumination for contrast enhancement in overlay metrology 有权

    公开(公告)号：US09645079B2

    公开(公告)日：2017-05-09

    申请号：US14794294

    申请日：2015-07-08

    Applicant: KLA-Tencor Corporation

    Inventor： Joel Seligson ,  Noam Sapiens ,  Daniel Kandel

    IPC: G01B11/14 ,  G01N21/47 ,  G03F7/20 ,  G01B11/02 ,  G01N21/00

    CPC classification number: G01N21/47 ,  G01B11/02 ,  G01N21/00 ,  G03F7/70633

    Abstract: Contrast enhancement in a metrology tool may include generating a beam of illumination, directing a portion of the generated beam onto a surface of a spatial light modulator (SLM), directing at least a portion of the generated beam incident on the surface of the SLM through an aperture of an aperture stop and onto one or more target structures of one or more samples, and generating a selected illumination pupil function of the illumination transmitted through the aperture utilizing the SLM in order to establish a contrast level of one or more field images of the one or more target structures above a selected contrast threshold, and performing one or more metrology measurements on the one or more target structures utilizing the selected illumination pupil function.

    Apodization for pupil imaging scatterometry
    43.
    发明授权
    Apodization for pupil imaging scatterometry 有权
    瞳孔成像散射的变迹

    公开(公告)号：US09091650B2

    公开(公告)日：2015-07-28

    申请号：US13936529

    申请日：2013-07-08

    Applicant: KLA-Tencor Corporation

    Inventor： Andrew V. Hill ,  Amnon Manassen ,  Barak Bringoltz ,  Ohad Bachar ,  Mark Ghinovker ,  Zeev Bomzon ,  Daniel Kandel

    IPC: G01B11/14 ,  G01N21/55 ,  G03F7/20

    CPC classification number: G02B27/58 ,  G01B11/00 ,  G01N21/47 ,  G01N21/55 ,  G01N2201/06113 ,  G01N2201/068 ,  G03F7/70625 ,  G03F7/70633

    Abstract: The disclosure is directed to various apodization schemes for pupil imaging scatterometry. In some embodiments, the system includes an apodizer disposed within a pupil plane of the illumination path. In some embodiments, the system further includes an illumination scanner configured to scan a surface of the sample with at least a portion of apodized illumination. In some embodiments, the system includes an apodized pupil configured to provide a quadrupole illumination function. In some embodiments, the system further includes an apodized collection field stop. The various embodiments described herein may be combined to achieve certain advantages.

    Abstract translation: 本公开涉及用于瞳孔成像散射测量的各种变迹方案。 在一些实施例中，该系统包括设置在照明路径的光瞳平面内的变迹器。 在一些实施例中，系统还包括照明扫描器，其构造成用至少一部分变迹照明来扫描样品的表面。 在一些实施例中，系统包括配置成提供四极照明功能的变迹瞳孔。 在一些实施例中，系统还包括变迹集合区域停止。 可以组合这里描述的各种实施例以实现某些优点。

    ON-DEVICE METROLOGY
    46.
    发明申请
    ON-DEVICE METROLOGY 有权
    设备计量学

    公开(公告)号：US20140316730A1

    公开(公告)日：2014-10-23

    申请号：US14252323

    申请日：2014-04-14

    Applicant: KLA-Tencor Corporation

    Inventor： Andrei V. Shchegrov ,  Jonathan M. Madsen ,  Stilian Ivanov Pandev ,  Ady Levy ,  Daniel Kandel ,  Michael E. Adel ,  Ori Tadmor

    IPC: H01L21/66

    CPC classification number: H01L22/12 ,  H01L22/20 ,  H01L22/30 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Methods and systems for performing semiconductor metrology directly on device structures are presented. A measurement model is created based on measured training data collected from at least one device structure. The trained measurement model is used to calculate process parameter values, structure parameter values, or both, directly from measurement data collected from device structures of other wafers. In some examples, measurement data from multiple targets is collected for model building, training, and measurement. In some examples, the use of measurement data associated with multiple targets eliminates, or significantly reduces, the effect of under layers in the measurement result, and enables more accurate measurements. Measurement data collected for model building, training, and measurement may be derived from measurements performed by a combination of multiple, different measurement techniques.

    Abstract translation: 提出了直接在器件结构上执行半导体测量的方法和系统。 基于从至少一个设备结构收集的测量训练数据创建测量模型。 训练后的测量模型用于直接从其他晶圆的器件结构收集的测量数据中计算过程参数值，结构参数值或两者。 在一些示例中，收集来自多个目标的测量数据用于模型构建，训练和测量。 在一些示例中，使用与多个目标相关联的测量数据消除或显着降低测量结果中下层的影响，并且能够进行更精确的测量。 用于模型建立，训练和测量收集的测量数据可以通过多种不同测量技术的组合进行的测量得出。

    DEVICE-LIKE SCATTEROMETRY OVERLAY TARGETS
    48.
    发明申请
    DEVICE-LIKE SCATTEROMETRY OVERLAY TARGETS 有权
    设备类似的重叠目标

    公开(公告)号：US20130342831A1

    公开(公告)日：2013-12-26

    申请号：US13904318

    申请日：2013-05-29

    Applicant: KLA-Tencor Corporation

    Inventor： Vladimir Levinski ,  Daniel Kandel ,  Eran Amit

    IPC: G01B11/27 ,  H01L23/544

    CPC classification number: G01B11/272 ,  G01N21/47 ,  G01N21/956 ,  G03F7/70633 ,  H01L23/544 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: In one embodiment, a semiconductor target for detecting overlay error between two or more successive layers of a substrate or between two or more separately generated patterns on a single layer of a substrate is disclosed. The target comprises at least a plurality of a plurality of first grating structures having a course pitch that is resolvable by an inspection tool and a plurality of second grating structures positioned relative to the first grating structures. The second grating structures have a fine pitch that is smaller than the course pitch, and the first and second grating structures are both formed in two or more successive layers of a substrate or between two or more separately generated patterns on a single layer of a substrate. The first and second gratings have feature dimensions that all comply with a predefined design rules specification.

    Abstract translation: 在一个实施例中，公开了一种半导体靶，用于检测衬底的两个或更多个连续层之间或在衬底的单层上的两个或更多个分开产生的图案之间的重叠误差。 目标包括至少多个多个第一光栅结构，其具有可由检测工具分辨的光程间距和相对于第一光栅结构定位的多个第二光栅结构。 第二光栅结构具有小于光栅间距的细间距，并且第一和第二光栅结构均形成在衬底的两个或更多个连续层中，或者在衬底的单个层上的两个或更多个分开产生的图案之间 。 第一和第二光栅具有全部符合预定义的设计规则规范的特征尺寸。

    Device metrology targets and methods
    49.
    发明授权
    Device metrology targets and methods 有权

    公开(公告)号：US11054752B2

    公开(公告)日：2021-07-06

    申请号：US16102424

    申请日：2018-08-13

    Applicant: KLA-Tencor Corporation

    Inventor： Eran Amit ,  Daniel Kandel ,  Dror Alumot ,  Amit Shaked ,  Liran Yerushalmi

    IPC: G03F7/20 ,  H01L21/66 ,  H01L27/02 ,  H01L27/092

    Abstract: An overlay metrology system includes one or more processors coupled to an illumination source to direct illumination to a sample and a detector to capture diffracted orders of radiation from the sample. The system may generate overlay sensitivity calibration parameters based on differential measurements of a calibration target including two overlay target cells on the sample, where first-layer target elements and second-layer target elements of the overlay target cells are distributed with a common pitch along a measurement direction and are misregistered with a selected offset value in opposite directions. The system may further determine overlay measurements based on differential measurements of additional overlay target cells with two wavelengths, where first-layer target elements and second-layer target elements of the additional overlay target cells are distributed with the common pitch and are formed to overlap symmetrically. The system may further adjust the overlay measurements with the overlay sensitivity calibration parameters.

    Metrology using overlay and yield critical patterns
    50.
    发明授权
    Metrology using overlay and yield critical patterns 有权

    公开(公告)号：US10685165B2

    公开(公告)日：2020-06-16

    申请号：US15082152

    申请日：2016-03-28

    Applicant: KLA-Tencor Corporation

    Inventor： Daniel Kandel ,  Mark D. Smith ,  Mark Wagner ,  Eran Amit ,  Myungjun Lee

    IPC: G01R31/14 ,  G06F30/398 ,  H01L21/66 ,  G01N21/93 ,  G01N21/956 ,  G06F119/18

    Abstract: Metrology methods are provided, which comprise identifying overlay critical patterns in a device design, the overlay critical patterns having an overlay sensitivity to process variation above a specified threshold that depends on design specifications; and using metrology targets that correspond to the identified overlay critical patterns. Alternatively or complementarily, metrology methods comprise identifying yield critical patterns according to a corresponding process window narrowing due to specified process variation, wherein the narrowing is defined by a dependency of edge placement errors (EPEs) of the patterns on process parameters. Corresponding targets and measurements are provided.

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