Charged-Particle Exposure Apparatus With Electrostatic Zone Plate
    41.
    发明申请
    Charged-Particle Exposure Apparatus With Electrostatic Zone Plate 有权
    带静电带的带电粒子曝光装置

    公开(公告)号:US20080230711A1

    公开(公告)日:2008-09-25

    申请号:US11816059

    申请日:2006-02-09

    CPC classification number: B82Y10/00 B82Y40/00 H01J37/3174

    Abstract: In a particle-beam projection processing apparatus for irradiating a target by a beam of energetic electrically charged particles, including an illumination system, a pattern definition system for positioning an aperture arrangement composed of apertures transparent to the energetic particles in the path of the illuminating beam, and a projection system to project the beam onto a target, there is provided at least one plate electrode device, which has openings corresponding to the apertures of the pattern definition system and including a composite electrode composed of a number of partial electrodes being arranged non-overlapping and adjoining to each other, the total lateral dimensions of the composite electrode covering the aperture arrangement of the pattern definition system. The partial electrodes can be applied different electrostatic potentials.

    Abstract translation: 在用于通过包括照明系统的能量带电粒子束照射目标的粒子束投影处理装置中,用于定位由照明光束的路径中的能量粒子透明的孔组成的孔布置的图案定义系统 以及用于将光束投射到靶上的投影系统,设置有至少一个平板电极装置,其具有对应于图案定义系统的孔的开口,并且包括由多个部分电极组成的复合电极, 重叠并相邻,覆盖图案定义系统的孔布置的复合电极的总侧向尺寸。 部分电极可以施加不同的静电电位。

    Charged-particle exposure apparatus
    42.
    发明申请
    Charged-particle exposure apparatus 有权
    带电粒子曝光装置

    公开(公告)号:US20080099693A1

    公开(公告)日:2008-05-01

    申请号:US11978661

    申请日:2007-10-30

    Abstract: In a particle-beam projection processing apparatus a target (41) is irradiated by means of a beam (pb) of energetic electrically charged particles, using a projection system (103) to image a pattern presented in a pattern definition means (102) onto the target (41) held at position by means of a target stage; no elements—other than the target itself—obstruct the path of the beam after the optical elements of the projection system. In order to reduce contaminations from the target space into the projection system, a protective diaphragm (15) is provided between the projection system and the target stage, having a central aperture surrounding the path of the patterned beam, wherein at least the portions of the diaphragm defining the central aperture are located within a field-free space after the projection system (103).

    Abstract translation: 在粒子束投影处理装置中,使用投影系统(103)将图案定义装置(102)中呈现的图案成像到图像定义装置(102)的图像上,借助于能量带电粒子束(pb)照射目标(41) 目标(41)通过目标阶段保持在位置; 没有元件 - 除了目标本身 - 在投影系统的光学元件之后阻挡光束的路径。 为了减少从目标空间到投影系统的污染,在投影系统和目标台之间提供保护膜片(15),其具有围绕图案化梁的路径的中心孔,其中至少部分 限定中心孔的光阑在投影系统(103)之后位于无场空间内。

    Method for multi-beam exposure on a target
    43.
    发明授权
    Method for multi-beam exposure on a target 有权
    目标多光束曝光方法

    公开(公告)号:US08378320B2

    公开(公告)日:2013-02-19

    申请号:US13051714

    申请日:2011-03-18

    CPC classification number: B82Y40/00 B82Y10/00 H01J37/3177

    Abstract: For irradiating a target with a beam of energetic electrically charged particles comprising a plurality of beamlets, the target is exposed in a sequence of exposure stripes composed image pixels. These stripes (s1, s2) are, at their boundaries to adjacent stripes, provided with overlap margins (m12, m21) which are mutually overlapped, so nominal positions of image pixels in the overlap margin (m21) overlap, or substantially coincide, with image pixels in the corresponding overlap margin (m12). During the exposure of an overlap margin (m21), a first subset (n1) of image pixels in said overlap margin are exposed while those of a second subset (n2), possibly a complementary subset with respect to a desired pattern, are not exposed; contrariwise, during the exposure of the corresponding overlap margin (m12), image pixels corresponding to image pixels in the first subset are not exposed, but those corresponding to image pixels in the second subset are.

    Abstract translation: 为了用包含多个子束的能量带电粒子束照射目标,目标以组成图像像素的曝光条纹的序列曝光。 这些条纹(s1,s2)在其相邻条纹的边界处设置有相互重叠的重叠边缘(m12,m21),因此重叠边界(m21)中图像像素的标称位置重叠或基本一致,与 相应重叠余量(m12)中的图像像素。 在重叠边缘(m21)的曝光期间,暴露所述重叠边缘中的图像像素的第一子集(n1),而第二子集(n2)可能相对于期望图案可能是互补子集的 ; 相反地​​,在曝光相应重叠余量(m12)期间,与第一子集中的图像像素相对应的图像像素不被曝光,但是对应于第二子集中的图像像素的像素是。

    Charged-particle exposure apparatus with electrostatic zone plate
    44.
    发明授权
    Charged-particle exposure apparatus with electrostatic zone plate 有权
    带静电带的带电粒子曝光装置

    公开(公告)号:US08304749B2

    公开(公告)日:2012-11-06

    申请号:US11816059

    申请日:2006-02-09

    CPC classification number: B82Y10/00 B82Y40/00 H01J37/3174

    Abstract: In a particle-beam projection processing apparatus for irradiating a target by a beam of energetic electrically charged particles, including an illumination system, a pattern definition system for positioning an aperture arrangement composed of apertures transparent to the energetic particles in the path of the illuminating beam, and a projection system to project the beam onto a target, there is provided at least one plate electrode device, which has openings corresponding to the apertures of the pattern definition system and including a composite electrode composed of a number of partial electrodes being arranged non-overlapping and adjoining to each other, the total lateral dimensions of the composite electrode covering the aperture arrangement of the pattern definition system. The partial electrodes can be applied different electrostatic potentials.

    Abstract translation: 在用于通过包括照明系统的能量带电粒子束照射目标的粒子束投影处理装置中,用于定位由照明光束的路径中的能量粒子透明的孔组成的孔布置的图案定义系统 以及用于将光束投射到靶上的投影系统,设置有至少一个平板电极装置,其具有对应于图案定义系统的孔的开口,并且包括由多个部分电极组成的复合电极, 重叠并相邻,覆盖图案定义系统的孔布置的复合电极的总侧向尺寸。 部分电极可以施加不同的静电电位。

    Constant current multi-beam patterning
    45.
    发明授权
    Constant current multi-beam patterning 有权
    恒流多光束图案化

    公开(公告)号:US08057972B2

    公开(公告)日:2011-11-15

    申请号:US12619071

    申请日:2009-11-16

    CPC classification number: H01J37/3177 B82Y10/00 B82Y40/00 Y10S430/143

    Abstract: The invention relates to a method for forming a pattern on a substrate surface of a target by means of a beam of electrically charged particles in a number of exposure steps, where the beam is split into a patterned beam and there is a relative motion between the substrate and the pattern definition means. This results in an effective overall motion of the patterned particle beam over the substrate surface and exposition of image elements on the substrate surface in each exposure step, wherein the image elements on the target are exposed to the beamlets multiply, namely several times during a number of exposure steps according to a specific sequence. The sequence of exposure steps of the image elements is arranged in a non-linear manner according to a specific rule from one exposure step to the subsequent exposure step in order to reduce the current variations in the optical column of the multi-beam exposure apparatus during the exposure of the pattern.

    Abstract translation: 本发明涉及一种用于在多个曝光步骤中通过带电粒子束在靶的衬底表面上形成图案的方法,其中光束被分裂成图案化的束,并且在两者之间存在相对运动 底物和图案定义方式。 这导致图案化的粒子束在衬底表面上的有效的总体运动,并且在每个曝光步骤中在衬底表面上显示图像元素,其中靶上的图像元素暴露于子束,在数字期间多次 的曝光步骤。 根据从一个曝光步骤到随后的曝光步骤的特定规则,图像元素的曝光步骤的顺序以非线性方式排列,以便减少多光束曝光设备的光学列中的电流变化 曝光的图案。

    PATTERN DEFINITION DEVICE WITH MULTIPLE MULTIBEAM ARRAY
    46.
    发明申请
    PATTERN DEFINITION DEVICE WITH MULTIPLE MULTIBEAM ARRAY 有权
    具多个多重阵列的图形定义装置

    公开(公告)号:US20110204253A1

    公开(公告)日:2011-08-25

    申请号:US12959270

    申请日:2010-12-02

    Abstract: A multi-beam pattern definition device (102) for use in a particle-beam processing or inspection apparatus is configured to be irradiated with a beam (lp,bp) of electrically charged particles so as to form a number of beamlets to be imaged to a target. An aperture array means (202) comprises at least two sets of apertures (221, 222) for defining respective beamlets (b1-b5), wherein the sets of apertures comprise a plurality of apertures arranged in interlacing arrangements and the apertures of different sets are offset to each other by a common displacement vector (d12). An opening array means (201) has a plurality of openings (210) configured for the passage of a subset of beamlets corresponding to one of the sets of apertures but lacking openings (being opaque to the beam) at locations corresponding to the other sets of apertures. A positioning means shifts the aperture array means relative to the opening array means in order to selectively bring one of the sets of apertures into alignment with the openings in the opening array means.

    Abstract translation: 用于粒子束处理或检查装置的多光束图案定义装置(102)被配置为用带电粒子的束(lp,bp)照射,以便形成若干待成像的子束 一个目标。 孔径阵列装置(202)包括用于限定各个子束(b1-b5)的至少两组孔(221,222),其中所述孔组包括布置在隔行布置中的多个孔,并且不同组的孔是 通过公共位移矢量(d12)彼此偏移。 开口阵列装置(201)具有多个开口(210),所述多个开口(210)构造成用于通过对应于所述一组孔的子束的子集,但是在对应于其它组的位置处的位置处缺少开口(对于不透明的) 孔。 定位装置相对于开口阵列装置移动孔径阵列装置,以选择性地使组的一组孔与开口阵列装置中的开口对准。

    MULTI-BEAM DEFLECTOR ARRAY MEANS WITH BONDED ELECTRODES
    47.
    发明申请
    MULTI-BEAM DEFLECTOR ARRAY MEANS WITH BONDED ELECTRODES 有权
    多光束偏转器阵列与粘结电极相同

    公开(公告)号:US20100288938A1

    公开(公告)日:2010-11-18

    申请号:US12780551

    申请日:2010-05-14

    Abstract: The invention relates to a multi-beam deflector array means for use in a particle-beam exposure apparatus employing a beam of charged particles, said multi-beam deflector array means having an overall plate-like shape with a membrane region and a buried CMOS-layer, said membrane region comprising a first side facing towards the incoming beam of particles and a second side opposite to the first side, an array of apertures, each aperture allowing passage of a corresponding beam element formed out of said beam of particles, and an array of electrodes, each aperture being associated with at least one of said electrodes and the electrodes being controlled via said CMOS layer, wherein the electrodes are pillared, standing proud of the main body of the multi-beam deflector array means, the electrodes being connected to one side of the main body of the multi-beam deflector array means by means of bonding connections.

    Abstract translation: 本发明涉及一种用于使用带电粒子束的粒子束曝光设备的多光束偏转器阵列装置,所述多光束偏转器阵列装置具有总体板状形状,其具有膜区域和掩埋的CMOS- 所述膜区域包括面向入射入射束的第一侧和与第一侧相对的第二侧,孔阵列,每个孔允许通过由所述粒子束形成的对应的束元件,以及 电极阵列,每个孔与所述电极中的至少一个相关联,并且电极通过所述CMOS层进行控制,其中所述电极被支柱,对于多光束偏转器阵列装置的主体站立,电极被连接 通过粘合连接到多光束偏转器阵列装置的主体的一侧。

    Global Point Spreading Function in Multi-Beam Patterning
    48.
    发明申请
    Global Point Spreading Function in Multi-Beam Patterning 有权
    多光束图案中的全局点扩散函数

    公开(公告)号:US20100224790A1

    公开(公告)日:2010-09-09

    申请号:US12708737

    申请日:2010-02-19

    CPC classification number: H01J37/3174 B82Y10/00 B82Y40/00

    Abstract: In a particle multi-beam structuring apparatus for forming a pattern on a target's surface using a beam of electrically charged particles, during exposure steps the particle beam is produced, directed through a pattern definition means producing a patterned particle beam composed of multiple beamlets, and projected by an optical column including a controllable deflection means onto the target surface to form, at a nominal location on the target, a beam image comprising the image of defining structures in the pattern definition means. The beam image's nominal location relative to the target is changed between exposure steps. The actual location of the beam image is varied within each exposure step around the nominal location, through a set of locations realizing a distribution of locations within the image plane around a mean location coinciding with the nominal location, thus introducing an additional blur which is homogenous over the entire beam image.

    Abstract translation: 在用于使用带电粒子束在目标表面上形成图案的粒子多光束结构装置中,在曝光步骤期间,通过产生由多个子束组成的图案化粒子束的图案定义装置产生粒子束,并且 通过包括可控偏转装置的光学柱被投影到目标表面上,以在目标的标称位置处形成包括图案定义装置中的限定结构的图像的光束图像。 相对于目标的光束图像的标称位置在曝光步骤之间改变。 射束图像的实际位置在标称位置周围的每个曝光步骤内通过一组位置实现,该位置实现在与标称位置重合的平均位置周围的图像平面内的位置的分布,从而引入均匀的附加模糊 在整个光束图像上。

    COMPENSATION OF DOSE INHOMOGENEITY AND IMAGE DISTORTION
    49.
    发明申请
    COMPENSATION OF DOSE INHOMOGENEITY AND IMAGE DISTORTION 有权
    剂量不均匀性和图像失真的补偿

    公开(公告)号:US20100038554A1

    公开(公告)日:2010-02-18

    申请号:US12535744

    申请日:2009-08-05

    CPC classification number: B82Y40/00 B82Y10/00 G03F1/20 G03F7/70433 H01J37/3174

    Abstract: An improved aperture arrangement in a device for defining a pattern on a target, for use in a particle-beam exposure apparatus, by being irradiated with a beam of electrically charged particles and allowing passage of the beam only through a plurality of apertures. The device includes an aperture array having a plurality of apertures of identical shape defining the shape and relative position of beamlets permeating the apertures. A blanking device switches off the passage of selected beamlets permeating the apertures and defined by them. The apertures are arranged on the aperture array according to an arrangement deviating from a regular arrangement by small deviations, adjusting for distortions caused by the particle-beam exposure apparatus, and the size of the apertures of the aperture array differs across the aperture array in order to allow for an adjustment of the current radiated on the target through the apertures and the corresponding openings.

    Abstract translation: 用于在靶上限定图案的装置中的改进的孔布置,用于粒子束曝光装置,通过照射带电粒子束并允许光束仅通过多个孔。 该装置包括孔阵列,该孔阵列具有多个相同形状的孔,限定穿透孔的子束的形状和相对位置。 消隐装置关闭穿过孔并由它们限定的选定子束的通过。 根据通过小偏差偏离规则排列的布置,孔径布置在孔阵列上,调整由粒子束曝光装置引起的变形,并且孔径阵列的孔径的大小沿孔径阵列依次不同 以允许通过孔和相应的开口调节在靶上辐射的电流。

    PATTERN DEFINITION DEVICE HAVING DISTINCT COUNTER-ELECTRODE ARRAY PLATE
    50.
    发明申请
    PATTERN DEFINITION DEVICE HAVING DISTINCT COUNTER-ELECTRODE ARRAY PLATE 有权
    具有隔离计数器电极阵列的图案定义装置

    公开(公告)号:US20080283767A1

    公开(公告)日:2008-11-20

    申请号:US12120130

    申请日:2008-05-13

    Abstract: A multi-beam pattern definition device for use in a particle-beam processing or inspection apparatus, which is set up to be irradiated with a beam of electrically charged particles and allow passage of the beam through a plurality of apertures thus forming beamlets, which are imaged onto a target. A deflection array has a plurality of electrostatic deflector electrodes for each beamlet. Each deflector electrode can be applied an electrostatic potential individually. Counter electrodes are electrically connected to a counter potential independently of the deflection array through a counter-electrode array. The counter potentials may be a common ground potential or individual potentials in order to improve system reliability. In conjunction with an associated counter electrode, each deflector electrode deflects its beamlet sufficiently to deflect the beamlet off its nominal path when applied an activating voltage against the respective counter electrode.

    Abstract translation: 一种用于粒子束处理或检查装置的多光束图案定义装置,其被设置为被一束带电粒子照射,并允许光束通过多个孔,从而形成子束, 成像到目标上。 偏转阵列具有用于每个子束的多个静电偏转器电极。 每个偏转器电极可以分别施加静电电位。 反电极通过对电极阵列独立于偏转阵列电连接到反电位。 为了提高系统的可靠性,反电势可能是共同的潜力或个别的潜力。 结合相关的对电极,当向相应的对电极施加激活电压时,每个偏转器电极充分偏转其子束以使子束偏离其标称路径。

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