摘要:
An integrated circuit semiconductor device includes a charge pump to provide current at a potential which is greater than a supply potential. The charge pump utilizes an oscillator, which causes the charge pump to cycle, and thereby provide a continuous output at an elevated potential. In order to optimize efficiency of the charge pump, the oscillator is able to change its frequency in response to output potential. In the preferred embodiments, this is accomplished by selectively inserting a supplemental portion into a ring oscillator loop. When used with an integrated circuit device, such as a DRAM, the current from the charge pump may be supplied to nodes on isolation devices and nodes on word lines, thereby improving the performance of the DRAM without substantially changing the circuit configuration of the DRAM array.
摘要:
An active termination circuit is used to set the input impedance of a plurality of input terminals. Each of the input terminals is coupled to a supply voltage through at least one PMOS transistor and to ground through at least one NMOS transistor. The impedances of the transistors are controlled by a control circuit that generates a first control signal to set the impedance of another PMOS transistor to be equal to a first predetermined resistance, and generates a second control signal to set the impedance of another NMOS transistor to be equal to a second predetermined resistance. The first control signal is used to control all of the PMOS transistors and the second control signal is used to control all of the NMOS transistors. As a result, the PMOS and NMOS transistors coupled to each input terminal have impedances corresponding to the first and second resistances, respectively.
摘要:
A lead frame includes at least two layers, each of which includes an electrically conductive bus and a group of leads that extend substantially unidirectionally from a single edge of the lead frame. The lead fingers of each layer may extend in substantially the same direction. The electrically conductive buses of the two or more lead frame layers are at least partially superimposed with respect to one another. An insulator element is disposed between at least portions of the superimposed regions of the buses. One of the buses is connectable to a power supply source (VCC), while the other is connectable to a power supply ground (VSS). Thus, the mutually superimposed regions of the buses form a decoupling capacitor. Lead fingers of one of the layers may be arranged in groups which flank the remainder of the lead fingers so that they are not interleaved therewith.
摘要翻译:引线框架包括至少两个层,每个层包括导电总线和从引线框架的单个边缘基本上单向延伸的一组引线。 每个层的引线指可以基本相同的方向延伸。 两个或更多个引线框架层的导电总线相对于彼此至少部分地叠置。 绝缘体元件设置在总线的叠加区域的至少一部分之间。 其中一个总线可连接到电源(V CC CC),而另一个可连接到电源地(V SS SS)。 因此,总线的相互叠加的区域形成去耦电容器。 这些层中的一个的引导指可以以与引线指的其余部分相对侧的组排列,使得它们不与其交错。
摘要:
An antifuse detection circuit is described which uses a latching circuit and two antifuses. The antifuses are coupled between the latch circuit and ground. The latching circuit described is a differential circuit which can detect which one of the two antifuses has been programmed. The circuit accurately detects an antifuse which has a relatively high resistance after being programmed.
摘要:
A detection circuit for detecting unblown and blown conditions for an anti-fuse. The detection circuit includes a precharge circuit for applying a precharge to the anti-fuse during a precharge time interval, and a sampling circuit for coupling the anti-fuse to the detection node to provide a voltage at the detection node that is indicative of the ability of the anti-fuse to retain a charge during the discharge time interval. An output circuit that is coupled to the detection node is responsive to the voltage provided at the detection node to provide a first output for indicating an unblown condition for the anti-fuse and a second output for indicating a blown condition for the anti-fuse.
摘要:
An active termination circuit is used to set the input impedance of a plurality of input terminals. Each of the input terminals is coupled to a supply voltage through at least one PMOS transistor and to ground through at least one NMOS transistor. The impedances of the transistors are controlled by a control circuit that generates a first control signal to set the impedance of another PMOS transistor to be equal to a first predetermined resistance, and generates a second control signal to set the impedance of another NMOS transistor to be equal to a second predetermined resistance. The first control signal is used to control all of the PMOS transistors and the second control signal is used to control all of the NMOS transistors. As a result, the PMOS and NMOS transistors coupled to each input terminal have impedances corresponding to the first and second resistances, respectively.
摘要:
An active termination circuit is used to set the input impedance of a plurality of input terminals. Each of the input terminals is coupled to a supply voltage through at least one PMOS transistor and to ground through at least one NMOS transistor. The impedances of the transistors are controlled by a control circuit that generates a first control signal to set the impedance of another PMOS transistor to be equal to a first predetermined resistance, and generates a second control signal to set the impedance of another NMOS transistor to be equal to a second predetermined resistance. The first control signal is used to control all of the PMOS transistors and the second control signal is used to control all of the NMOS transistors. As a result, the PMOS and NMOS transistors coupled to each input terminal have impedances corresponding to the first and second resistances, respectively.
摘要:
An active termination circuit is used to set the input impedance of a plurality of input terminals. Each of the input terminals is coupled to a supply voltage through at least one PMOS transistor and to ground through at least one NMOS transistor. The impedances of the transistors are controlled by a control circuit that generates a first control signal to set the impedance of another PMOS transistor to be equal to a first predetermined resistance, and generates a second control signal to set the impedance of another NMOS transistor to be equal to a second predetermined resistance. The first control signal is used to control all of the PMOS transistors and the second control signal is used to control all of the NMOS transistors. As a result, the PMOS and NMOS transistors coupled to each input terminal have impedances corresponding to the first and second resistances, respectively.
摘要:
An antifuse detection circuit is described which uses a latching circuit and two antifuses. The antifuses are coupled between the latch circuit and ground. The latching circuit described is a differential circuit which can detect which one of the two antifuses has been programmed. The circuit accurately detects an antifuse which has a relatively high resistance after being programmed.
摘要:
A lead frame assembly including at least two layers. A first of the lead frame layers includes a first wide, electrically conductive bus and a plurality of leads that extend substantially unidirectionally from a single edge of the lead frame assembly. The second lead frame layer includes a second wide, electrically conductive bus that is superimposed over the first bus and a plurality of lead fingers extending substantially unidirectionally from a single edge of the lead frame assembly. Preferably, the lead fingers of both the first and second layers extend in substantially the same direction. An insulator element is disposed between the first and second buses. One of the buses is connectable to a power supply source (Vcc), while the other is connectable to a power supply ground (Vss). Thus, the co-extensive portions of the first and second buses form a decoupling capacitor. Lead fingers which are connected to the power supply source (Vcc) are preferably grouped into at least one group and flank the remainder of the lead fingers so that they are not interleaved therewith. Preferably, upon attachment of the lead frame assembly to a semiconductor device, the decoupling capacitor extends over a substantial portion of the latter.