公开(公告)号：US20220238295A1

公开(公告)日：2022-07-28

申请号：US17722874

申请日：2022-04-18

Applicant: Applied Materials, Inc.

Inventor： Joseph C. Olson ,  Morgan Evans ,  Thomas Soldi ,  Rutger Meyer Timmerman Thijssen ,  Maurice Emerson Peploski

IPC: H01J37/08 ,  H01J29/07 ,  H01J37/20 ,  H01J37/305

Abstract: Methods of producing grating materials with variable height are provided. In one example, a method may include providing a grating material atop a substrate, and positioning a shadow mask between the grating material and an ion source, wherein the shadow mask is separated from the grating material by a distance. The method may further include etching the grating material using an ion beam passing through a set of openings of the shadow mask, wherein a first depth of a first portion of the grating material is different than a second depth of a second portion of the grating material.

公开(公告)号：US11380578B2

公开(公告)日：2022-07-05

申请号：US16656798

申请日：2019-10-18

Applicant: Applied Materials, Inc.

Inventor： Rutger Meyer Timmerman Thijssen ,  Joseph C. Olson ,  Morgan Evans

IPC: H01L21/768 ,  H01L21/308 ,  H01J37/304 ,  H01J37/317

Abstract: Systems and methods discussed herein can be used to form gratings at various slant angles across a grating material on a single substrate by determining an ion beam angle and changing the angle of an ion beam among and between ion beam angles to form gratings with varying angles and cross-sectional geometries. The substrate can be rotated around a central axis, and one or more process parameters, such as a duty cycle of the ion beam, can be modulated to form a grating with a depth gradient.

公开(公告)号：US10991547B2

公开(公告)日：2021-04-27

申请号：US16582261

申请日：2019-09-25

Applicant: APPLIED Materials, Inc.

Inventor： Morgan Evans ,  Charles T. Carlson ,  Rutger Meyer Timmerman Thijssen ,  Ross Bandy ,  Ryan Magee

IPC: B81C1/00 ,  G02B5/18 ,  H01L21/3065 ,  H01L21/308 ,  H01J37/305

Abstract: A carrier proximity mask and methods of assembling and using the carrier proximity mask may include providing a first carrier body, second carrier body, and set of one or more clamps. The first carrier body may have one or more openings formed as proximity masks to form structures on a first side of a substrate. The first and second carrier bodies may have one or more contact areas to align with one or more contact areas on a first and second sides of the substrate. The set of one or more clamps may clamp the substrate between the first carrier body and the second carrier body at contact areas to suspend work areas of the substrate between the first and second carrier bodies. The openings to define edges to convolve beams to form structures on the substrate.

公开(公告)号：US20210090858A1

公开(公告)日：2021-03-25

申请号：US16582261

申请日：2019-09-25

Applicant: APPLIED Materials, Inc.

Inventor： Morgan Evans ,  Charles T. Carlson ,  Rutger Meyer Timmerman Thijssen ,  Ross Bandy ,  Ryan Magee

IPC: H01J37/305 ,  G02B5/18

Abstract: A carrier proximity mask and methods of assembling and using the carrier proximity mask may include providing a first carrier body, second carrier body, and set of one or more clamps. The first carrier body may have one or more openings formed as proximity masks to form structures on a first side of a substrate. The first and second carrier bodies may have one or more contact areas to align with one or more contact areas on a first and second sides of the substrate. The set of one or more clamps may clamp the substrate between the first carrier body and the second carrier body at contact areas to suspend work areas of the substrate between the first and second carrier bodies. The openings to define edges to convolve beams to form structures on the substrate.

公开(公告)号：US20210090843A1

公开(公告)日：2021-03-25

申请号：US16582249

申请日：2019-09-25

Applicant: APPLIED Materials, Inc.

Inventor： Morgan Evans ,  Charles T. Carlson ,  Rutger Meyer Timmerman Thijssen ,  Ross Bandy

IPC: H01J37/09 ,  H01J37/305

Abstract: A carrier proximity mask and methods of assembling and using the carrier proximity mask may include providing a first carrier body, second carrier body, and set of one or more clamps. The first carrier body may have one or more openings formed as proximity masks to form structures on a first side of a substrate. The first and second carrier bodies may have one or more contact areas to align with one or more contact areas on a first and second sides of the substrate. The set of one or more clamps may clamp the substrate between the first carrier body and the second carrier body at contact areas to suspend work areas of the substrate between the first and second carrier bodies. The openings to define edges to convolve beams to form structures on the substrate.

公开(公告)号：US20200185228A1

公开(公告)日：2020-06-11

申请号：US16793683

申请日：2020-02-18

Applicant: APPLIED Materials, Inc.

Inventor： Min Gyu Sung ,  Sony Varghese ,  Anthony Renau ,  Morgan Evans ,  Joseph C. Olson

IPC: H01L21/3065 ,  H01L29/78 ,  H01L27/092 ,  H01L21/8238 ,  H01L29/06 ,  H01L21/8234 ,  H01L29/423 ,  H01L29/66

Abstract: A method of forming a three-dimensional transistor device. The method may include providing a fin array on a substrate, the fin array comprising a plurality of fin structures, formed from a monocrystalline semiconductor, and disposed subjacent to a hard mask layer. The method may include directing angled ions at the fin array, wherein the angled ions form a non-zero angle of incidence with respect to a perpendicular to a plane of the substrate. The angled ions may etch the plurality of fin structures to form a stack of isolated nanowires, within a given fin structure.