Abstract:
A system for performing single wavelength ellipsometry (SWE) on a thin film on a multi-layer substrate such as silicon-on-insulator (SOI) applies a measurement beam having an absorption distance less than the thickness of the superficial layer of the multi-layer substrate. For example, for an SOI substrate, the measurement beam is selected to have a wavelength that results in an absorption distance that is less than the superficial silicon layer thickness. The system can include a cleaning laser to provide concurrent cleaning to enhance measurement accuracy without negatively impacting throughput. The measurement beam source can be configured to provide a measurement beam at one wavelength and a cleaning beam at a longer wavelength, so that the absorption depth of the measurement beam is less than the superficial layer thickness while the absorption depth of the cleaning beam is greater than the superficial layer thickness.
Abstract:
In a device for measuring the complete polarization state of light over a spectral bandwidth, an optical input signal (41) with wavelengths of light within a spectral band is incident on two or more diffraction gratings (42, 44, 46, 48), or incident from at least two directions on one or more diffraction gratings (72, 74), and the intensity is measured as a function of wavelength for at least four of the diffraction spectra produced by the grating(s). The polarization state of light is then calculated as a function of wavelength over the spectral bandwidth from the intensity measurements.
Abstract:
An apparatus for measuring a thickness of a substrate having an upper surface, without contacting the upper surface of the substrate. A platen having a base surface receives the substrate, and a reference surface is disposed at a known first height from the platen surface. A non contact sensor senses the known first height of the reference surface without making physical contact with the reference surface. The non contact sensor further senses a relative difference between the known first height of the reference surface and a second height of the upper surface of the substrate without making physical contact with the upper surface of the substrate. A controller controls the sensor and determines the thickness of the substrate based at least in part on the known first height of the reference surface and the relative difference between the known first height of the reference surface and the second height of the upper surface of the substrate.
Abstract:
A solar thermochemical processing system is disclosed. The system includes a first unit operation for receiving concentrated solar energy. Heat from the solar energy is used to drive the first unit operation. The first unit operation also receives a first set of reactants and produces a first set of products. A second unit operation receives the first set of products from the first unit operation and produces a second set of products. A third unit operation receives heat from the second unit operation to produce a portion of the first set of reactants.
Abstract:
An apparatus 100 comprising a first substrate 130 having a first surface 125, a second substrate 132 having a second surface 127 facing the first surface and an array 170 of metallic raised features 170 being located on the first surface, each raised feature being in contact with the first surface to the second surface, a portion of the raised features being deformed via a compressive force 305.
Abstract:
A method that incorporates teachings of the subject disclosure may include, for example, utilizing a system including at least one processor for determining a video modification plan for a received video stream of a video call session according to the at least one party associated with the video call session, modifying, by the system, a plurality of background images of the received video stream according to the video modification plan to generate a plurality of modified background images, and generating, by the system, a modified video stream according to the plurality of modified background images. Other embodiments are disclosed.
Abstract:
A Mueller ellipsometer of the type having a first rotating element on an incident beam side of a sample and a second rotating element on a reflected beam side of the sample and a detector having an integration time, having a controller for selectively and separately adjusting (1) a first angular frequency of the first rotating element and (2) a second angular frequency of the second rotating element.
Abstract:
A Mueller ellipsometer of the type having a first rotating element on an incident beam side of a sample and a second rotating element on a reflected beam side of the sample and a detector having an integration time, having a controller for selectively and separately adjusting (1) a first angular frequency of the first rotating element and (2) a second angular frequency of the second rotating element.
Abstract:
An apparatus includes a thermoelectric cooler adjacent to a surface of a device substrate and including a first set of one or more metal electrodes, a second set of one or more metal electrodes, and one or more semiconductor members. Each member includes a material different from the device substrate and physically joins a corresponding one electrode of the first set to a corresponding one electrode of the second set. The electrodes and at least one member are configured to transport heat to or from a thermal load in a direction parallel to the surface of the device substrate.
Abstract:
An optical method and system for measuring characteristics of a sample using a broadband metrology tool in a purge gas flow environment are disclosed. In the method a beam path for the metrology tool is purged with purge gas at a first flow rate. A surface of the sample is illuminated by a beam of source radiation having at least one wavelength component in a vacuum ultraviolet (VUV) range and/or at least one wavelength component in an ultraviolet-visible (UV-Vis) range. A flow rate of a purge gas is adjusted between the first flow rate for metrology measurements made when the source radiation is in the VUV spectral region and a second flow rate for metrology measurements made when the source radiation is in the UV-Vis spectral region. The system includes a light source, illumination optics, collection optics, detector, a purge gas source and a controller. The purge gas source is configured to supply a flow of purge gas to a beam path in the light source and/or illumination optics and/or sample and/or collection optics and/or detector. The controller is configured to control a flow rate of the purged gas flow in response to an output signal from the detector.