Method for forming thin film capacitors
    45.
    发明授权
    Method for forming thin film capacitors 失效
    薄膜电容器的形成方法

    公开(公告)号:US5912044A

    公开(公告)日:1999-06-15

    申请号:US782205

    申请日:1997-01-10

    Abstract: Thin film capacitors are formed by a multi-level dry processing method that includes simultaneous ablation of via openings through both the dielectric and the metal electrode layers of a capacitor. Preferably, the dielectric films are formed of barium strontium titanate and the metal electrode layers are formed of platinum. The present invention overcomes the problems associated with the use of strong etchants to sequentially form separate via openings through the electrode and dielectric layers, prevents the potential for delamination of the respective layers during wet etching and the possible undesirable effects of etching solutions on substrate materials.

    Abstract translation: 薄膜电容器通过多级干法处理方法形成,其包括通过电容器的电介质和金属电极层的同时烧蚀通孔。 优选地,电介质膜由钛酸钡锶形成,并且金属电极层由铂形成。 本发明克服了与使用强蚀刻剂顺序地通过电极和电介质层形成单独的通路孔相关的问题,防止在湿蚀刻期间各层分层的可能性以及蚀刻溶液对衬底材料的可能不期望的影响。

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