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公开(公告)号:US20210114163A1
公开(公告)日:2021-04-22
申请号:US17036062
申请日:2020-09-29
Applicant: Samsung Display Co., LTD. , KCTECH CO.,LTD.
Inventor: Seung Bae KANG , Sung Hyeon PARK , Jung Gun NAM , Joon-Hwa BAE , Kyung Bo LEE , Keun Woo LEE , Woo Jin CHO , Byoung Kwon CHOO
Abstract: A substrate processing apparatus includes: a conveyor belt configured to have an outer surface on which a bottom surface of a substrate is seated; and a polishing head unit configured to face an upper surface of the substrate, wherein the polishing head unit includes: a polishing head connected to a driver; a polishing pad configured to face the polishing head; a polishing pad fixing ring disposed between the polishing head and the polishing pad; and a temperature sensor configured to overlap the polishing pad fixing ring and to be spaced apart from the polishing pad fixing ring.
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公开(公告)号:US20210079262A1
公开(公告)日:2021-03-18
申请号:US16954350
申请日:2018-11-13
Applicant: KCTECH CO., LTD.
Inventor: Hae Won YANG , Jun Ha HWANG , Jung Yoon KIM , Kwang Soo PARK
IPC: C09G1/02 , H01L21/321
Abstract: The present invention relates to a polishing slurry composition for an STI process, the polishing slurry composition comprising: a polishing solution including polishing particles; and an additive solution containing a nitride film polishing barrier inclusive of a polymer having an amide bond.
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公开(公告)号:US10784113B2
公开(公告)日:2020-09-22
申请号:US15773904
申请日:2016-08-08
Applicant: KCTECH CO., LTD.
Inventor: Kyunam Park
IPC: H01L21/304 , H01L21/306 , H01L21/67 , H01L21/02 , C09G1/02 , B24B37/12 , B24B37/20
Abstract: Provided are a chemical mechanical polishing apparatus and a control method thereof. The chemical mechanical polishing apparatus includes a plurality of polishing platens provided with a polishing pad on an upper surface thereof, and a polishing platen transferring unit for transferring the plurality of polishing platens to different process positions according to a predetermined process sequence. Here, different processes are performed at different process positions.
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公开(公告)号:US20200294832A1
公开(公告)日:2020-09-17
申请号:US16748834
申请日:2020-01-22
Applicant: KCTECH CO., LTD.
Inventor: DONG MIN KIM
IPC: H01L21/677 , B24B57/02
Abstract: The present disclosure relates to a substrate processing apparatus, and more specifically, to a substrate processing apparatus capable of blocking the introduction of external air and external particles into a chamber by forming an air curtain at a loading/unloading part when the chamber is open.The substrate processing apparatus of the present disclosure includes a chamber in which a space is formed, and a fluid injection part configured to inject a fluid from an outer side of a substrate loading/unloading part of the chamber through which a substrate is loaded and unloaded.
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公开(公告)号:US20200243306A1
公开(公告)日:2020-07-30
申请号:US16750317
申请日:2020-01-23
Applicant: KCTECH CO.,LTD.
Inventor: Yong Ki HAN
Abstract: Disclosed are an opening and shutting device and a substrate processing apparatus including the same. A device for opening and closing an entrance through which a substrate is carried into and out of a processing chamber includes an opening and shutting part that is disposed between the entrance and the processing chamber and that opens and closes the entrance while rotating so as to be brought into close contact with the entrance.
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公开(公告)号:US20180355213A1
公开(公告)日:2018-12-13
申请号:US15883655
申请日:2018-01-30
Applicant: Samsung Electronics Co., Ltd. , KCTECH CO., LTD.
Inventor: Seung Ho Park , Hyun Goo KONG , Jung Hun KIM , Sang Mi LEE , Woo In LEE , Hee Sook CHEON , Sang Kyun KIM , Hao CUI , Jong Hyuk PARK , Il Young YOON
IPC: C09G1/02 , H01L21/28 , H01L27/108 , H01L21/321
CPC classification number: C09G1/02 , H01L21/28079 , H01L21/28123 , H01L21/3212 , H01L27/10814 , H01L27/10823 , H01L27/10876
Abstract: A slurry composition for polishing a metal layer and a method for fabricating a semiconductor device using the same are provided. The slurry composition for polishing a metal layer includes polishing particles including a metal oxide, an oxidizer including hydrogen peroxide, and a first polishing regulator including at least one selected from a group consisting of phosphate, phosphite, hypophosphite, and metaphosphate, wherein a content of the oxidizer is 0.01 wt % to 0.09 wt % with respect to 100 wt % of the slurry composition for polishing the metal layer.
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公开(公告)号:US12186900B2
公开(公告)日:2025-01-07
申请号:US17671259
申请日:2022-02-14
Applicant: KCTECH CO., LTD.
Inventor: Hee Sung Chae , Seung Eun Lee , Geun Sik Yun
Abstract: A substrate cleaning line and a substrate cleaning system including the same are disclosed. The substrate cleaning line may include a chamber portion including a plurality of cleaning chambers to clean a substrate, and a first return robot to load, unload, or transfer the substrate from or to the plurality of cleaning chambers, wherein the cleaning chambers may be stacked on each other in a vertical direction.
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公开(公告)号:US20240286176A1
公开(公告)日:2024-08-29
申请号:US18469540
申请日:2023-09-18
Applicant: KCTECH CO., LTD.
Inventor: Keun Woo LEE , Dae Jung KANG , Byeong Jo PARK
CPC classification number: B08B5/043 , B08B3/022 , B08B5/023 , H01L21/67051 , B08B2203/0211
Abstract: A substrate cleaning apparatus includes a stage on which a substrate is placed, a support unit configured to support the substrate and to rotate the substrate, and a cleaning unit configured to spray a dual fluid to clean the substrate, wherein the cleaning unit may include a spray nozzle including a spray hole opened toward the stage and configured to spray a dual fluid through the spray hole, a cover that may include an inlet surrounding at least a partial area of an outer circumferential surface of the spray hole, that may surround at least a partial area of an outer circumferential surface of the spray nozzle, and that may be spaced apart from the spray nozzle by a predetermined distance, and an air flow passage formed in a space between the cover and the spray nozzle and through which air sucked from the inlet flows.
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公开(公告)号:US20230373042A1
公开(公告)日:2023-11-23
申请号:US18104592
申请日:2023-02-01
Applicant: KCTECH CO., LTD.
Inventor: Jun Ho SON
IPC: B23Q3/08
CPC classification number: B23Q3/088 , B23Q2703/04 , B23Q2717/00
Abstract: Disclosed is a substrate chuck. More particularly, a substrate chuck including a chucking film made of a flexible material capable of elastic deformation to cover a mounting region of an upper surface of a surface plate on which a substrate is to be mounted; and a substrate chuck for gripping the substrate by applying suction pressure to a lower part of the chucking film to form a vacuum between the chucking film and the substrate; and a substrate scrubbing apparatus including the substrate chuck are provided.
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公开(公告)号:US20230339070A1
公开(公告)日:2023-10-26
申请号:US18136834
申请日:2023-04-19
Applicant: KCTECH CO., LTD.
Inventor: Ki Hyuk YANG , Sang Jeong WOO
CPC classification number: B24B49/14 , B24B49/045 , B24B7/04
Abstract: Provided is a high-precision substrate polishing system. An apparatus for polishing a substrate includes a platen on which a polishing pad is seated and which is rotatable, a substrate carrier configured to grip a substrate and rotatable on an upper side of the platen, an infrared sensor located inside the platen and configured to measure a temperature of the substrate, and a controller configured to determine a polishing state of the substrate using a value measured by the infrared sensor.
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