公开(公告)号：US08003450B2

公开(公告)日：2011-08-23

申请号：US12318244

申请日：2008-12-23

申请人： Jae-Kyeong Jeong ,  Hyun-Soo Shin ,  Yeon-Gon Mo ,  Hyung-Jun Kim ,  Seong-Joon Lim

发明人： Jae-Kyeong Jeong ,  Hyun-Soo Shin ,  Yeon-Gon Mo ,  Hyung-Jun Kim ,  Seong-Joon Lim

IPC分类号： H01L21/00

CPC分类号： H01L29/7869 ,  H01L27/1225

摘要： A thin film transistor (TFT) includes a substrate, a transparent semiconductor layer on the substrate, the transparent semiconductor layer including zinc oxide and exhibiting a charge concentration of about 1×1014 atom/cm3 to about 1×1017 atom/cm3, a gate electrode on the substrate, a gate insulating layer between the gate electrode and the transparent semiconductor layer, the gate insulting layer insulating the gate electrode from the transparent semiconductor layer, and source and drain electrodes on the substrate, the source and drain electrodes being in contact with the transparent semiconductor layer.

摘要翻译： 薄膜晶体管（TFT）包括基板，在基板上的透明半导体层，包含氧化锌的透明半导体层，其电荷浓度为约1×1014原子/ cm3至约1×1017原子/ cm3，栅极 电极，栅电极和透明半导体层之间的栅极绝缘层，栅极绝缘层与透明半导体层绝缘，源极和漏极在基板上，源电极和漏电极接触 与透明半导体层。

公开(公告)号：US07868327B2

公开(公告)日：2011-01-11

申请号：US11508530

申请日：2006-08-22

申请人： Jae Kyeong Jeong ,  Hyun Soo Shin ,  Se Yeoul Kwon ,  Yeon Gon Mo

发明人： Jae Kyeong Jeong ,  Hyun Soo Shin ,  Se Yeoul Kwon ,  Yeon Gon Mo

IPC分类号： H01L29/04

CPC分类号： H01L29/78603 ,  H01L29/66757

摘要： A thin film transistor (TFT) and a method of manufacturing the same, and more particularly, a TFT for reducing leakage current and a method of manufacturing the same are provided. The TFT includes a flexible substrate, a diffusion preventing layer formed on the flexible substrate, a buffer layer formed of at least two insulated materials on the diffusion preventing layer, a semiconductor layer formed on a region of the buffer layer to include a channel layer and a source and drain region, a gate insulating layer formed on the buffer layer including the semiconductor layer, a gate electrode formed on the gate insulating layer in a region corresponding to the channel layer, an interlayer insulating layer formed on the gate insulating layer including the gate electrode, and source and drain electrodes formed in the interlayer insulating layer to include a predetermined contact hole that exposes at least a region of the source and drain region and to be connected to the source and drain region.

摘要翻译： 提供一种薄膜晶体管（TFT）及其制造方法，更具体地说，提供了一种用于减小漏电流的TFT及其制造方法。 TFT包括柔性基板，形成在柔性基板上的扩散防止层，由扩散防止层上的至少两个绝缘材料形成的缓冲层，形成在缓冲层的包括沟道层的区域上的半导体层，以及 源极和漏极区域，形成在包括半导体层的缓冲层上的栅极绝缘层，形成在与沟道层对应的区域中的栅极绝缘层上的栅极电极，形成在栅极绝缘层上的层间绝缘层， 栅极电极和形成在层间绝缘层中的源电极和漏电极，以包括预定的接触孔，其暴露出源极和漏极区域的至少一部分并连接到源极和漏极区域。

公开(公告)号：US07847292B2

公开(公告)日：2010-12-07

申请号：US12591548

申请日：2009-11-23

申请人： Jae-Bon Koo ,  Jae-Kyeong Jeong ,  Hyun-Soo Shin ,  Yeon-Gon Mo

发明人： Jae-Bon Koo ,  Jae-Kyeong Jeong ,  Hyun-Soo Shin ,  Yeon-Gon Mo

IPC分类号： H01L27/14

CPC分类号： H01L27/3276 ,  H01L27/3265

摘要： A flat panel display that can prevent a voltage drop of a driving power and, at the same time, minimizes the characteristic reduction of electronic devices located in a circuit region where various circuit devices are located includes: a substrate; an insulating film arranged on the substrate; a pixel region including at least one light emitting diode, the pixel region arranged on the insulating film and adapted to display an image; a circuit region arranged on the insulating film and including electronic devices adapted to control signals supplied to the pixel region; and a conductive film interposed between the substrate and the insulating film in a region corresponding to the pixel region and electrically connected to one electrode of the light emitting diode.

公开(公告)号：US07777225B2

公开(公告)日：2010-08-17

申请号：US12120693

申请日：2008-05-15

申请人： Hun-jung Lee ,  Nam-choul Yang ,  Jae-kyeong Jeong ,  Hyun-soo Shin ,  Jin-seong Park ,  Jong-han Jeong ,  Yeon-gon Mo

发明人： Hun-jung Lee ,  Nam-choul Yang ,  Jae-kyeong Jeong ,  Hyun-soo Shin ,  Jin-seong Park ,  Jong-han Jeong ,  Yeon-gon Mo

IPC分类号： H01L31/00

CPC分类号： H01L27/3244 ,  H01L27/1225 ,  H01L27/3248 ,  H01L29/7869 ,  H01L51/5092 ,  H01L51/5234 ,  H01L51/5271

摘要： An organic light-emitting display device. The organic light-emitting display device according to an embodiment of the present invention utilizes an N-type driving transistor, and therefore it has a drain electrode of a driving transistor electrically connected to a cathode electrode of an organic light-emitting diode, wherein the organic light-emitting display device includes a thin metal film between the cathode electrode and the organic light-emitting layer.

摘要翻译： 一种有机发光显示装置。 根据本发明实施例的有机发光显示装置利用N型驱动晶体管，因此具有与有机发光二极管的阴极电连接的驱动晶体管的漏电极，其中， 有机发光显示装置包括在阴极电极和有机发光层之间的金属薄膜。

公开(公告)号：US07692381B2

公开(公告)日：2010-04-06

申请号：US11638792

申请日：2006-12-14

申请人： Se Yeoul Kwon ,  Hyun Soo Shin ,  Jae Kyeong Jeong

发明人： Se Yeoul Kwon ,  Hyun Soo Shin ,  Jae Kyeong Jeong

IPC分类号： H01J1/62

CPC分类号： H01L51/52 ,  H01L27/3244 ,  H01L2251/5338

摘要： An organic light emitting display device which can prevent separation of a buffer layer, thereby reducing an electrical short is disclosed. One embodiment of the organic light emitting display device includes a substrate made of a metal, a metal thin film formed on the substrate, a buffer layer formed on the metal thin film, and an organic light emitting diode formed on the buffer layer. Accordingly, a leakage current caused by an electrical short can be effectively prevented by preventing the separation of the buffer layer.

摘要翻译： 公开了一种能够防止缓冲层分离从而减少电短路的有机发光显示装置。 有机发光显示装置的一个实施例包括由金属制成的基板，形成在基板上的金属薄膜，形成在金属薄膜上的缓冲层和形成在缓冲层上的有机发光二极管。 因此，通过防止缓冲层的分离，可以有效地防止由电气短路引起的漏电流。

公开(公告)号：US07652287B2

公开(公告)日：2010-01-26

申请号：US12222497

申请日：2008-08-11

申请人： Jong-han Jeong ,  Jae-kyeong Jeong ,  Yeon-gon Mo ,  Jin-seong Park ,  Hun-jung Lee ,  Hyun-soo Shin

发明人： Jong-han Jeong ,  Jae-kyeong Jeong ,  Yeon-gon Mo ,  Jin-seong Park ,  Hun-jung Lee ,  Hyun-soo Shin

IPC分类号： H01L29/04 ,  H01L29/10 ,  H01L27/12

CPC分类号： H01L29/7869

摘要： A thin film transistor (TFT) includes an N-type oxide semiconductor layer on a substrate, a gate electrode spaced apart from the N-type oxide semiconductor layer by a gate dielectric layer, a source electrode contacting a first portion of the N-type oxide semiconductor layer, and a drain electrode contacting a second portion of the N-type oxide semiconductor layer. The first and second portions each have a doped region containing ions of at least one Group 1 element, and the ions of the at least one Group 1 element in the doped region may have a work function that is less than that of an N-type oxide semiconductor material included in the semiconductor layer.

摘要翻译： 薄膜晶体管（TFT）包括在基板上的N型氧化物半导体层，通过栅极电介质层与N型氧化物半导体层间隔开的栅电极，与N型氧化物半导体层的第一部分接触的源电极 氧化物半导体层，以及与N型氧化物半导体层的第二部分接触的漏电极。 第一和第二部分各自具有包含至少一个第一族元素的离子的掺杂区，并且掺杂区中的至少一个第一族元素的离子可具有小于N型的功函数 氧化物半导体材料。

公开(公告)号：US20100006833A1

公开(公告)日：2010-01-14

申请号：US12393422

申请日：2009-02-26

申请人： Jae-Heung Ha ,  Young-Woo Song ,  Jong-Hyuk Lee ,  Jong-Han Jeong ,  Min-Kyu Kim ,  Yeon-Gon Mo ,  Jae-Kyeong Jeong ,  Hyun-Joong Chung ,  Kwang-Suk Kim ,  Hui-Won Yang ,  Chaun-Gi Choi

发明人： Jae-Heung Ha ,  Young-Woo Song ,  Jong-Hyuk Lee ,  Jong-Han Jeong ,  Min-Kyu Kim ,  Yeon-Gon Mo ,  Jae-Kyeong Jeong ,  Hyun-Joong Chung ,  Kwang-Suk Kim ,  Hui-Won Yang ,  Chaun-Gi Choi

IPC分类号： H01L29/12 ,  H01L21/04

CPC分类号： H01L29/7869

摘要： A thin film transistor, a method of manufacturing the thin film transistor, and a flat panel display device including the thin film transistor. The thin film transistor includes: a gate electrode formed on a substrate; a gate insulating film formed on the gate electrode; an activation layer formed on the gate insulating film; a passivation layer including a compound semiconductor oxide, formed on the activation layer; and source and drain electrodes that contact the activation layer.

摘要翻译： 薄膜晶体管，薄膜晶体管的制造方法以及包括该薄膜晶体管的平板显示装置。 薄膜晶体管包括：形成在基板上的栅电极; 形成在栅电极上的栅极绝缘膜; 形成在所述栅极绝缘膜上的活化层; 在活化层上形成包含化合物半导体氧化物的钝化层; 以及与激活层接触的源极和漏极。

公开(公告)号：US20090321731A1

公开(公告)日：2009-12-31

申请号：US12352851

申请日：2009-01-13

申请人： Jae-Kyeong JEONG ,  Jong-Han Jeong ,  Min-Kyu Kim ,  Tae-Kyung Ahn ,  Yeon-Gon Mo ,  Hui-Won Yang

发明人： Jae-Kyeong JEONG ,  Jong-Han Jeong ,  Min-Kyu Kim ,  Tae-Kyung Ahn ,  Yeon-Gon Mo ,  Hui-Won Yang

IPC分类号： H01L31/0256 ,  H01L29/12 ,  H01L21/02 ,  H01L31/00

CPC分类号： H01L29/7869 ,  H01L29/4908 ,  H01L29/78696

摘要： A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include a gate electrode formed on a substrate; an active layer made of an oxide semiconductor and insulated from the gate electrode by a gate insulating layer; source and drain electrodes coupled to the active layer; and an interfacial stability layer formed on one or both surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0 eV. Since the interfacial stability layer has the same characteristic as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented.

摘要翻译： 使用氧化物半导体作为有源层的薄膜晶体管（TFT），制造TFT的方法以及具有该TFT的平板显示装置包括形成在基板上的栅电极; 由氧化物半导体制成的有源层，并通过栅极绝缘层与栅电极绝缘; 源极和漏极耦合到有源层; 以及形成在活性层的一个或两个表面上的界面稳定层。 在TFT中，界面稳定层由带隙为3.0〜8.0eV的氧化物形成。 由于界面稳定层具有与栅极绝缘层和钝化层相同的特性，因此保持化学上高的界面稳定性。 由于界面稳定层具有等于或大于有源层的带隙，所以物理地防止了电荷俘获。

公开(公告)号：US20090294772A1

公开(公告)日：2009-12-03

申请号：US12318856

申请日：2009-01-09

申请人： Jong-Han Jeong ,  Kwang-Suk Kim ,  Jae-Kyeong Jeong ,  Hui-Won Yang ,  Yeon-Gon Mo

发明人： Jong-Han Jeong ,  Kwang-Suk Kim ,  Jae-Kyeong Jeong ,  Hui-Won Yang ,  Yeon-Gon Mo

IPC分类号： H01L33/00 ,  H01J1/62 ,  H01L21/336

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/66969 ,  H01L29/78618

摘要： A thin film transistor is provided having an oxide semiconductor as an active layer, a method of manufacturing the thin film transistor and a flat panel display device having the thin film transistor. The thin film transistor includes: a gate electrode formed on a substrate; an oxide semiconductor layer isolated from the gate electrode by a gate insulating layer and including channel, source and drain regions; source and drain electrodes coupled to the source and drain regions, respectively; and an ohmic contact layer interposed between the source and drain regions and the source and drain electrodes. In the TFT, the ohmic contact layer is formed with the oxide semiconductor layer having a carrier concentration higher than those of the source and drain regions.

摘要翻译： 提供具有氧化物半导体作为有源层的薄膜晶体管，制造薄膜晶体管的方法和具有薄膜晶体管的平板显示装置。 薄膜晶体管包括：形成在基板上的栅电极; 通过栅极绝缘层与栅电极隔离并且包括沟道，源极和漏极区域的氧化物半导体层; 源极和漏极分别耦合到源极和漏极区域; 以及插入在源极和漏极区域以及源极和漏极之间的欧姆接触层。 在TFT中，欧姆接触层与载流子浓度高于源区和漏区的氧化物半导体层形成。

公开(公告)号：US20090256147A1

公开(公告)日：2009-10-15

申请号：US12382341

申请日：2009-03-13

申请人： Min-Kyu Kim ,  Tae-Kyung Ahn ,  Jae-Kyeong Jeong

发明人： Min-Kyu Kim ,  Tae-Kyung Ahn ,  Jae-Kyeong Jeong

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/7869

摘要： A thin film transistor, including a transparent channel pattern, a transparent gate insulating layer in contact with the channel pattern, a passivation film pattern disposed on the channel pattern, a source/drain coupled to the channel pattern through a via hole in the passivation film pattern, and a gate facing the channel pattern, the gate insulating layer interposed between the gate and the channel pattern, wherein the passivation film pattern includes at least one of polyimide, photoacryl, and spin on glass (SOG).

摘要翻译： 一种薄膜晶体管，包括透明沟道图案，与沟道图案接触的透明栅极绝缘层，设置在沟道图案上的钝化膜图案，通过钝化膜中的通孔耦合到沟道图案的源极/漏极 图案和面对沟道图案的栅极，插入在栅极和沟道图案之间的栅极绝缘层，其中钝化膜图案包括聚酰亚胺，光致聚丙烯和旋转玻璃（SOG）中的至少一种。