公开(公告)号：US09035313B2

公开(公告)日：2015-05-19

申请号：US13408825

申请日：2012-02-29

申请人： Jae-Kyeong Jeong ,  Jong-Han Jeong ,  Min-Kyu Kim ,  Tae-Kyung Ahn ,  Yeong-Gon Mo ,  Hui-Won Yang

发明人： Jae-Kyeong Jeong ,  Jong-Han Jeong ,  Min-Kyu Kim ,  Tae-Kyung Ahn ,  Yeong-Gon Mo ,  Hui-Won Yang

IPC分类号： H01L29/786 ,  H01L29/49

CPC分类号： H01L29/7869 ,  H01L29/4908 ,  H01L29/78696

摘要： A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include a gate electrode formed on a substrate; an active layer made of an oxide semiconductor and insulated from the gate electrode by a gate insulating layer; source and drain electrodes coupled to the active layer; and an interfacial stability layer formed on one or both surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0 eV. Since the interfacial stability layer has the same characteristic as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented.

摘要翻译： 使用氧化物半导体作为有源层的薄膜晶体管（TFT），制造TFT的方法以及具有该TFT的平板显示装置包括形成在基板上的栅电极; 由氧化物半导体制成的有源层，并通过栅极绝缘层与栅电极绝缘; 源极和漏极耦合到有源层; 以及形成在活性层的一个或两个表面上的界面稳定层。 在TFT中，界面稳定层由带隙为3.0〜8.0eV的氧化物形成。 由于界面稳定层具有与栅极绝缘层和钝化层相同的特性，因此保持化学上高的界面稳定性。 由于界面稳定层具有等于或大于有源层的带隙，所以物理地防止了电荷俘获。

公开(公告)号：US20090321731A1

公开(公告)日：2009-12-31

申请号：US12352851

申请日：2009-01-13

申请人： Jae-Kyeong JEONG ,  Jong-Han Jeong ,  Min-Kyu Kim ,  Tae-Kyung Ahn ,  Yeon-Gon Mo ,  Hui-Won Yang

发明人： Jae-Kyeong JEONG ,  Jong-Han Jeong ,  Min-Kyu Kim ,  Tae-Kyung Ahn ,  Yeon-Gon Mo ,  Hui-Won Yang

IPC分类号： H01L31/0256 ,  H01L29/12 ,  H01L21/02 ,  H01L31/00

CPC分类号： H01L29/7869 ,  H01L29/4908 ,  H01L29/78696

摘要： A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include a gate electrode formed on a substrate; an active layer made of an oxide semiconductor and insulated from the gate electrode by a gate insulating layer; source and drain electrodes coupled to the active layer; and an interfacial stability layer formed on one or both surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0 eV. Since the interfacial stability layer has the same characteristic as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented.

摘要翻译： 使用氧化物半导体作为有源层的薄膜晶体管（TFT），制造TFT的方法以及具有该TFT的平板显示装置包括形成在基板上的栅电极; 由氧化物半导体制成的有源层，并通过栅极绝缘层与栅电极绝缘; 源极和漏极耦合到有源层; 以及形成在活性层的一个或两个表面上的界面稳定层。 在TFT中，界面稳定层由带隙为3.0〜8.0eV的氧化物形成。 由于界面稳定层具有与栅极绝缘层和钝化层相同的特性，因此保持化学上高的界面稳定性。 由于界面稳定层具有等于或大于有源层的带隙，所以物理地防止了电荷俘获。

公开(公告)号：US20090256147A1

公开(公告)日：2009-10-15

申请号：US12382341

申请日：2009-03-13

申请人： Min-Kyu Kim ,  Tae-Kyung Ahn ,  Jae-Kyeong Jeong

发明人： Min-Kyu Kim ,  Tae-Kyung Ahn ,  Jae-Kyeong Jeong

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/7869

摘要： A thin film transistor, including a transparent channel pattern, a transparent gate insulating layer in contact with the channel pattern, a passivation film pattern disposed on the channel pattern, a source/drain coupled to the channel pattern through a via hole in the passivation film pattern, and a gate facing the channel pattern, the gate insulating layer interposed between the gate and the channel pattern, wherein the passivation film pattern includes at least one of polyimide, photoacryl, and spin on glass (SOG).

摘要翻译： 一种薄膜晶体管，包括透明沟道图案，与沟道图案接触的透明栅极绝缘层，设置在沟道图案上的钝化膜图案，通过钝化膜中的通孔耦合到沟道图案的源极/漏极 图案和面对沟道图案的栅极，插入在栅极和沟道图案之间的栅极绝缘层，其中钝化膜图案包括聚酰亚胺，光致聚丙烯和旋转玻璃（SOG）中的至少一种。

公开(公告)号：US08541258B2

公开(公告)日：2013-09-24

申请号：US13091614

申请日：2011-04-21

申请人： Min-Kyu Kim ,  Jong-Han Jeong ,  Tae-Kyung Ahn ,  Jae-Kyeong Jeong ,  Yeon-Gon Mo ,  Jin-Seong Park ,  Hyun-Joong Chung ,  Kwang-Suk Kim ,  Hui-Won Yang

发明人： Min-Kyu Kim ,  Jong-Han Jeong ,  Tae-Kyung Ahn ,  Jae-Kyeong Jeong ,  Yeon-Gon Mo ,  Jin-Seong Park ,  Hyun-Joong Chung ,  Kwang-Suk Kim ,  Hui-Won Yang

IPC分类号： H01L21/00

CPC分类号： H01L29/7869 ,  H01L29/78606

摘要： A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include source and drain electrodes formed on a substrate; an active layer formed of an oxide semiconductor disposed on the source and drain electrodes; a gate electrode; and an interfacial stability layer formed on at least one of top and bottom surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0 eV. Since the interfacial stability layer has the same characteristics as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented.

摘要翻译： 使用氧化物半导体作为有源层的薄膜晶体管（TFT），TFT的制造方法以及具有TFT的平板显示装置包括：形成在基板上的源极和漏极; 由设置在源极和漏极上的氧化物半导体形成的有源层; 栅电极; 以及形成在活性层的顶表面和底表面中的至少一个上的界面稳定层。 在TFT中，界面稳定层由带隙为3.0〜8.0eV的氧化物形成。 由于界面稳定层具有与栅极绝缘层和钝化层相同的特性，因此保持了化学上高的界面稳定性。 由于界面稳定层具有等于或大于有源层的带隙，所以物理地防止了电荷俘获。

公开(公告)号：US08330150B2

公开(公告)日：2012-12-11

申请号：US12829139

申请日：2010-07-01

申请人： Hyun-Joong Chung ,  Jin-Seong Park ,  Jong-Han Jeong ,  Jae-Kyeong Jeong ,  Yeong-Gon Mo ,  Min-Kyu Kim ,  Tae-Kyung Ahn ,  Hui-Won Yang ,  Kwang-Suk Kim ,  Eun-Hyun Kim ,  Jae-Wook Kang ,  Jae-Soon Im

发明人： Hyun-Joong Chung ,  Jin-Seong Park ,  Jong-Han Jeong ,  Jae-Kyeong Jeong ,  Yeong-Gon Mo ,  Min-Kyu Kim ,  Tae-Kyung Ahn ,  Hui-Won Yang ,  Kwang-Suk Kim ,  Eun-Hyun Kim ,  Jae-Wook Kang ,  Jae-Soon Im

IPC分类号： H01L29/08

CPC分类号： H01L27/3248 ,  H01L27/1225 ,  H01L27/3258 ,  H01L27/3262 ,  H01L29/66969 ,  H01L29/7869 ,  H01L51/52 ,  H01L51/5237 ,  H01L51/56 ,  H01L2227/323 ,  H01L2251/5346

摘要： An organic light-emitting display device, which may be configured to prevent moisture or oxygen from penetrating the organic light-emitting display device from the outside is disclosed. An organic light-emitting display device, which is easily applied to a large display device and/or may be easily mass produced is further disclosed. Additionally disclosed is a method of manufacturing an organic light-emitting display device. An organic light-emitting display device may include, for example, a thin-film transistor (TFT) including a gate electrode, an active layer insulated from the gate electrode, source and drain electrodes insulated from the gate electrode and contacting the active layer and an insulating layer disposed between the source and drain electrodes and the active layer; and an organic light-emitting diode electrically connected to the TFT. The insulating layer may include, for example, a first insulating layer contacting the active layer; and a second insulating layer formed of a metal oxide and disposed on the first insulating layer.

摘要翻译： 公开了一种有机发光显示装置，其可被配置为防止水分或氧气从外部穿透有机发光显示装置。 进一步公开了易于应用于大型显示​​装置和/或可容易地批量生产的有机发光显示装置。 另外公开了一种制造有机发光显示装置的方法。 有机发光显示装置可以包括例如薄膜晶体管（TFT），其包括栅电极，与栅电极绝缘的有源层，与栅电极绝缘的源电极和漏电极，并与活性层接触和 设置在所述源极和漏极之间的绝缘层和所述有源层; 以及与TFT电连接的有机发光二极管。 绝缘层可以包括例如与活性层接触的第一绝缘层; 以及由金属氧化物形成并设置在第一绝缘层上的第二绝缘层。

公开(公告)号：US08148779B2

公开(公告)日：2012-04-03

申请号：US12352851

申请日：2009-01-13

申请人： Jae-Kyeong Jeong ,  Jong-Han Jeong ,  Min-Kyu Kim ,  Tae-Kyung Ahn ,  Yeon-Gon Mo ,  Hui-Won Yang

发明人： Jae-Kyeong Jeong ,  Jong-Han Jeong ,  Min-Kyu Kim ,  Tae-Kyung Ahn ,  Yeon-Gon Mo ,  Hui-Won Yang

IPC分类号： H01L31/0256 ,  H01L29/12 ,  H01L21/02 ,  H01L31/00

CPC分类号： H01L29/7869 ,  H01L29/4908 ,  H01L29/78696

摘要： A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include a gate electrode formed on a substrate; an active layer made of an oxide semiconductor and insulated from the gate electrode by a gate insulating layer; source and drain electrodes coupled to the active layer; and an interfacial stability layer formed on one or both surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0 eV. Since the interfacial stability layer has the same characteristic as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented.

摘要翻译： 使用氧化物半导体作为有源层的薄膜晶体管（TFT），制造TFT的方法以及具有该TFT的平板显示装置包括形成在基板上的栅电极; 由氧化物半导体制成的有源层，并通过栅极绝缘层与栅电极绝缘; 源极和漏极耦合到有源层; 以及形成在活性层的一个或两个表面上的界面稳定层。 在TFT中，界面稳定层由带隙为3.0〜8.0eV的氧化物形成。 由于界面稳定层具有与栅极绝缘层和钝化层相同的特性，因此保持化学上高的界面稳定性。 由于界面稳定层具有等于或大于有源层的带隙，所以物理地防止了电荷俘获。

公开(公告)号：US20100176394A1

公开(公告)日：2010-07-15

申请号：US12654939

申请日：2010-01-08

申请人： Jin-Seong Park ,  Yeon-Gon Mo ,  Jae-Kyeong Jeong ,  Min-Kyu Kim ,  Hyun-Joong Chung ,  Tae-Kyung Ahn ,  Eun-Hyun Kim

发明人： Jin-Seong Park ,  Yeon-Gon Mo ,  Jae-Kyeong Jeong ,  Min-Kyu Kim ,  Hyun-Joong Chung ,  Tae-Kyung Ahn ,  Eun-Hyun Kim

IPC分类号： H01L33/00 ,  H01L29/786

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/45

摘要： An oxide semiconductor thin film transistor and a flat panel display device incorporating the same oxide semiconductor thin film transistor. The thin film transistor includes a gate electrode formed on the substrate, a gate insulating layer formed on the substrate and covering the gate electrode, an oxide semiconductor layer formed on the gate insulating layer and covering the gate electrode, a titanium layer formed in a source region and a drain region of the oxide semiconductor layer, and source and drain electrodes respectively coupled to the source region and the drain region through the titanium layer and made of copper. The titanium layer reduces the contact resistance between the source and drain electrodes made of copper and the oxide semiconductor layer, forms a stable interface junction therebetween, and blocks a diffusion of copper.

摘要翻译： 一种氧化物半导体薄膜晶体管和包含相同氧化物半导体薄膜晶体管的平板显示装置。 薄膜晶体管包括形成在基板上的栅电极，形成在基板上并覆盖栅电极的栅极绝缘层，形成在栅绝缘层上并覆盖栅电极的氧化物半导体层，形成在源极上的钛层 区域和漏区，以及分别通过钛层耦合到源极区域和漏极区域并由铜制成的源极和漏极电极。 钛层降低由铜和氧化物半导体层构成的源极和漏极之间的接触电阻，在它们之间形成稳定的界面接合，并阻止铜的扩散。

公开(公告)号：US20100176383A1

公开(公告)日：2010-07-15

申请号：US12654938

申请日：2010-01-08

申请人： Jin-Seong Park ,  Yeon-Gon Mo ,  Jae-Kyeong Jeong ,  Min-Kyu Kim ,  Hyun-Joong Chung ,  Tae-Kyung Ahn

发明人： Jin-Seong Park ,  Yeon-Gon Mo ,  Jae-Kyeong Jeong ,  Min-Kyu Kim ,  Hyun-Joong Chung ,  Tae-Kyung Ahn

IPC分类号： H01L51/52 ,  H01L51/56 ,  H01L33/00

CPC分类号： H01L27/3262 ,  H01L2251/305

摘要： Disclosed is an organic light emitting display device and a method of manufacturing the same. The organic light emitting display device includes the thin film transistor of the drive unit that has the activation layer formed in a structure where the first oxide semiconductor layer and the second oxide semiconductor layer are stacked, the thin film transistor of the pixel unit that has the activation layer formed of the second oxide semiconductor layer, and the organic light emitting diode coupled to the thin film transistor of the pixel unit. The thin film transistor of the drive unit has channel formed on the first oxide semiconductor layer having a higher carrier concentration than the second oxide semiconductor layer, having a high charge mobility, and the thin film transistor of the pixel unit has a channel formed on the second oxide semiconductor layer, having a stable and uniform functional property.

摘要翻译： 公开了一种有机发光显示装置及其制造方法。 有机发光显示装置包括具有以第一氧化物半导体层和第二氧化物半导体层堆叠的结构形成的激活层的驱动单元的薄膜晶体管，具有像素单元的薄膜晶体管 由第二氧化物半导体层形成的激活层和耦合到像素单元的薄膜晶体管的有机发光二极管。 驱动单元的薄膜晶体管具有形成在第一氧化物半导体层上的沟道，其具有比第二氧化物半导体层更高的载流子浓度，具有高电荷迁移率，并且像素单元的薄膜晶体管具有形成在 第二氧化物半导体层，具有稳定且均匀的功能特性。

公开(公告)号：US20130277660A1

公开(公告)日：2013-10-24

申请号：US13922785

申请日：2013-06-20

申请人： Jin-Seong Park ,  Yeon-Gon Mo ,  Jae-Kyeong Jeong ,  Min-Kyu Kim ,  Hyun-Joong Chung ,  Tae-Kyung Ahn ,  Eun-Hyun Kim

发明人： Jin-Seong Park ,  Yeon-Gon Mo ,  Jae-Kyeong Jeong ,  Min-Kyu Kim ,  Hyun-Joong Chung ,  Tae-Kyung Ahn ,  Eun-Hyun Kim

IPC分类号： H01L29/786

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/45

摘要： An oxide semiconductor thin film transistor and a flat panel display device incorporating the same oxide semiconductor thin film transistor. The thin film transistor includes a gate electrode formed on the substrate, a gate insulating layer formed on the substrate and covering the gate electrode, an oxide semiconductor layer formed on the gate insulating layer and covering the gate electrode, a titanium layer formed in a source region and a drain region of the oxide semiconductor layer, and source and drain electrodes respectively coupled to the source region and the drain region through the titanium layer and made of copper. The titanium layer reduces the contact resistance between the source and drain electrodes made of copper and the oxide semiconductor layer, forms a stable interface junction therebetween, and blocks a diffusion of copper.

摘要翻译： 一种氧化物半导体薄膜晶体管和包含相同氧化物半导体薄膜晶体管的平板显示装置。 薄膜晶体管包括形成在基板上的栅电极，形成在基板上并覆盖栅电极的栅极绝缘层，形成在栅绝缘层上并覆盖栅电极的氧化物半导体层，形成在源极上的钛层 区域和漏区，以及分别通过钛层耦合到源极区域和漏极区域并由铜制成的源极和漏极电极。 钛层降低由铜和氧化物半导体层构成的源极和漏极之间的接触电阻，在它们之间形成稳定的界面结，并阻止铜的扩散。

公开(公告)号：US08436342B2

公开(公告)日：2013-05-07

申请号：US12654938

申请日：2010-01-08

申请人： Jin-Seong Park ,  Yeon-Gon Mo ,  Jae-Kyeong Jeong ,  Min-Kyu Kim ,  Hyun-Joong Chung ,  Tae-Kyung Ahn

发明人： Jin-Seong Park ,  Yeon-Gon Mo ,  Jae-Kyeong Jeong ,  Min-Kyu Kim ,  Hyun-Joong Chung ,  Tae-Kyung Ahn

IPC分类号： H01L51/52 ,  H01L51/56 ,  H01L33/00

CPC分类号： H01L27/3262 ,  H01L2251/305

摘要： Disclosed is an organic light emitting display device and a method of manufacturing the same. The organic light emitting display device includes the thin film transistor of the drive unit that has the activation layer formed in a structure where the first oxide semiconductor layer and the second oxide semiconductor layer are stacked, the thin film transistor of the pixel unit that has the activation layer formed of the second oxide semiconductor layer, and the organic light emitting diode coupled to the thin film transistor of the pixel unit. The thin film transistor of the drive unit has channel formed on the first oxide semiconductor layer having a higher carrier concentration than the second oxide semiconductor layer, having a high charge mobility, and the thin film transistor of the pixel unit has a channel formed on the second oxide semiconductor layer, having a stable and uniform functional property.

摘要翻译： 公开了一种有机发光显示装置及其制造方法。 有机发光显示装置包括具有以第一氧化物半导体层和第二氧化物半导体层堆叠的结构形成的激活层的驱动单元的薄膜晶体管，具有像素单元的薄膜晶体管 由第二氧化物半导体层形成的激活层和耦合到像素单元的薄膜晶体管的有机发光二极管。 驱动单元的薄膜晶体管具有形成在第一氧化物半导体层上的沟道，其具有比第二氧化物半导体层更高的载流子浓度，具有高电荷迁移率，并且像素单元的薄膜晶体管具有形成在 第二氧化物半导体层，具有稳定且均匀的功能特性。