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    COMMUNICATION SYSTEM AND RECEIVER DEVICE
    42.
    发明申请
    COMMUNICATION SYSTEM AND RECEIVER DEVICE 审中-公开
    通信系统和接收机设备

    公开(公告)号：US20080292098A1

    公开(公告)日：2008-11-27

    申请号：US12124313

    申请日：2008-05-21

    Applicant: Isao AKIMA ,  Tatsuya HARA ,  Eiji NATORI ,  Kazuo TANAKA

    Inventor： Isao AKIMA ,  Tatsuya HARA ,  Eiji NATORI ,  Kazuo TANAKA

    IPC: H04L9/28

    CPC classification number: H04L9/0894 ,  H04L2209/84

    Abstract: A communication system includes: a transmission device; and a reception device, wherein the transmission device includes an encryption section that encrypts a plaintext to be transmitted to the reception device with a first encryption key, and a transmission section that transmits the encrypted plaintext to the reception device; and the reception device includes a FeRAM that stores a second encryption key to pair with the first encryption key, wherein, upon reading out the second encryption key from the FeRAM, the second encryption key is erased from the FeRAM, a reception section that receives the encrypted plaintext from the transmission device, and a decoding section that decodes the received plaintext encrypted with the first encryption key with the second encryption key that is supposed to be stored in the FeRAM.

    Abstract translation: 通信系统包括：发送装置; 以及接收装置，其中，所述发送装置包括：加密部，其利用第一加密密钥对要发送到所述接收装置的明文进行加密;以及发送部，其将所述加密的明文发送到所述接收装置; 并且接收装置包括存储与第一加密密钥配对的第二加密密钥的FeRAM，其中，从FeRAM读出第二加密密钥时，从FeRAM擦除第二加密密钥，接收部分 来自发送装置的加密明文;以及解码部，其利用假定存储在FeRAM中的第二加密密钥对接收到的用第一加密密钥加密的明文进行解码。

    Electrode, method of manufacturing the same, ferroelectric memory, and semiconductor device
    45.
    发明授权
    Electrode, method of manufacturing the same, ferroelectric memory, and semiconductor device 有权
    电极，其制造方法，铁电存储器和半导体器件

    公开(公告)号：US07163828B2

    公开(公告)日：2007-01-16

    申请号：US10805238

    申请日：2004-03-22

    Applicant: Takeshi Kijima ,  Koji Ohashi ,  Eiji Natori

    Inventor： Takeshi Kijima ,  Koji Ohashi ,  Eiji Natori

    IPC: H01L21/00

    CPC classification number: H01L28/65 ,  H01L28/55

    Abstract: The present invention relates to a method of manufacturing an electrode which includes forming an electrode over a substrate. Initial crystal nuclei of an electrode material are formed over the substrate in an island pattern, and then grown layers of the electrode material are formed by causing the initial crystal nuclei to be grown. A substrate temperature when forming the initial crystal nuclei is higher than a substrate temperature when forming the grown layers.

    Abstract translation: 本发明涉及电极的制造方法，其包括在基板上形成电极。 电极材料的初始晶核以岛状图案形成在衬底上，然后通过使初始晶核生长而形成电极材料的生长层。 当形成初始晶核时的衬底温度比形成生长层时的衬底温度高。

    Method of forming PZT ferroelectric film
    47.
    发明授权
    Method of forming PZT ferroelectric film 有权
    形成PZT铁电薄膜的方法

    公开(公告)号：US07026169B2

    公开(公告)日：2006-04-11

    申请号：US10800722

    申请日：2004-03-16

    Applicant: Takeshi Kijima ,  Yasuaki Hamada ,  Eiji Natori

    Inventor： Takeshi Kijima ,  Yasuaki Hamada ,  Eiji Natori

    IPC: H01L21/00

    CPC classification number: H01L21/02197 ,  C23C16/409 ,  C30B25/02 ,  C30B29/32 ,  H01L21/02271 ,  H01L21/31691 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/55

    Abstract: A method of forming a ferroelectric film including a complex oxide of PZT family on a metal film formed of Pt by using a metalorganic chemical vapor deposition method. At first, supply of Pb is started to form an alloy film of Pb and Pt on the metal film. Supply of Ti is then started to form an initial crystal nuclei of PbTiO3 on the alloy film. Then, supply of Zr is started to form a crystal grown layer of the complex oxide of PZT family on the initial crystal nuclei.

    Abstract translation: 通过使用金属有机化学气相沉积法在由Pt形成的金属膜上形成包含PZT族的复合氧化物的铁电体膜的方法。 首先，开始供给Pb，以在金属膜上形成Pb和Pt的合金膜。 然后开始供应Ti，以在合金膜上形成PbTiO 3 N 3的初始晶核。 然后，开始供给Zr，在初始晶核上形成PZT族的复合氧化物的结晶生长层。

    Ferroelectric memory and electronic apparatus
    49.
    发明授权
    Ferroelectric memory and electronic apparatus 失效
    铁电存储器和电子设备

    公开(公告)号：US06930339B2

    公开(公告)日：2005-08-16

    申请号：US10105002

    申请日：2002-03-22

    Applicant: Takamitsu Higuchi ,  Setsuya Iwashita ,  Hiromu Miyazawa ,  Kazumasa Hasegawa ,  Eiji Natori

    Inventor： Takamitsu Higuchi ,  Setsuya Iwashita ,  Hiromu Miyazawa ,  Kazumasa Hasegawa ,  Eiji Natori

    IPC: G11C11/22 ,  H01L21/8246 ,  H01L27/105 ,  H01L31/119

    CPC classification number: H01L27/105

    Abstract: The present invention relates to a ferroelectric memory having a matrix-type memory cell array which has a superior degree of integration, in which the angularity of the ferroelectric layer's hysteresis curve is improved, the production yield is increased and costs are reduced.A ferroelectric memory having improved angularity in the hysteresis curve, and superior memory characteristics, production yield and costs is realized as follows. Namely, a peripheral circuit chip and a memory cell array chip are engaged onto an inexpensive assembly base 300 such as glass or plastic. In memory cell array chip 200, a ferroelectric layer is made to undergo epitaxial growth on to a Si single crystal via a buffer layer and first signal electrode. As a result, a ferroelectric memory can be realized which has improved angularity in the hysteresis curve and superior memory characteristics, production yield, and cost.

    Abstract translation: 本发明涉及一种具有优异的集成度的矩阵式存储单元阵列的铁电存储器，其中提高了铁电层磁滞曲线的角度，提高了生产成本并降低了成本。 具有改善的滞后曲线的角度，优异的存储特性，生产成本和成本的铁电存储器实现如下。 也就是说，外围电路芯片和存储单元阵列芯片被接合到诸如玻璃或塑料的便宜的组装基座300上。 在存储单元阵列芯片200中，使铁电体层通过缓冲层和第一信号电极进行Si单晶的外延生长。 结果，可以实现具有改善的滞后曲线的角度和优异的记忆特性，产量和成本的铁电存储器。

    MOCVD apparatus and MOCVD method
    50.
    发明申请
    MOCVD apparatus and MOCVD method 有权
    MOCVD装置和MOCVD方法

    公开(公告)号：US20050172895A1

    公开(公告)日：2005-08-11

    申请号：US10376276

    申请日：2003-03-03

    Applicant: Takeshi Kijima ,  Eiji Natori ,  Mitsuhiro Suzuki

    Inventor： Takeshi Kijima ,  Eiji Natori ,  Mitsuhiro Suzuki

    IPC: C23C16/00 ,  C23C16/44 ,  C23C16/455

    CPC classification number: C23C16/45508 ,  C23C16/455

    Abstract: [Object] To provide an MOCVD apparatus and a MOCVD method which can deposit a thin film having satisfactory properties by preventing temperature decrease of a source gas. [Solving Means] An MOCVD apparatus according to the present invention is an apparatus for supplying a source gas as a mixture of an MO source gas with an oxidizing gas to a substrate 13 to thereby form a film. The MOCVD apparatus includes a substrate holder 14 for holding the substrate 13; a deposition chamber for housing the substrate holder; a supply mechanism for supplying the source gas to a surface of the substrate; and a heating device for heating the substrate 13 held by the substrate holder. The deposition chamber includes a substrate housing unit for housing the substrate holder holding the substrate, and a passage housing unit being connected to the substrate housing unit and constituting a passage for supplying the source gas to the substrate. The passage has a cross-sectional area smaller than the area of a deposition plane of the substrate 13 when the passage housing unit is cut in parallel with the deposition plane of the substrate 13.

    Abstract translation: 本发明提供一种能够通过防止源气体的温度降低而沉积具有令人满意的特性的薄膜的MOCVD装置和MOCVD方法。 本发明的MOCVD装置是将MO源气体与氧化性气体的混合物的源气体供给到基板13，从而形成膜的装置。 MOCVD装置包括用于保持基板13的基板支架14; 用于容纳衬底保持器的沉积室; 用于将源气体供给到基板的表面的供给机构; 以及用于加热由基板保持器保持的基板13的加热装置。 沉积室包括用于容纳保持基板的基板保持架的基板收纳单元，以及与基板收纳单元连接并构成用于将源气体供应到基板的通道的通道收纳单元。 当通道容纳单元与基板13的沉积平面平行地切割时，通道的横截面面积小于基板13的沉积平面的面积。

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