公开(公告)号：US20140191618A1

公开(公告)日：2014-07-10

申请号：US14123138

申请日：2011-06-07

Applicant: Takeshi Kijima ,  Yuuji Honda

Inventor： Takeshi Kijima ,  Yuuji Honda

IPC: H01L41/257 ,  B23K10/00 ,  H01L21/324

CPC classification number: H01L41/257 ,  B23K10/003 ,  H01L21/324 ,  Y10T29/42

Abstract: A plasma poling device includes a holding electrode (4) which is disposed in a poling chamber (1) and holds a substrate to be poled (2), an opposite electrode (7) which is disposed in the poling chamber and disposed facing the substrate to be poled held on the holding electrode, a power source (6) electrically connected to one electrode of the holding electrode and the opposite electrode, a gas supply mechanism supplying a plasma forming gas into a space between the opposite electrode and the holding electrode, and a control unit controlling the power source and the gas supply mechanism. The control unit controls the power source and the gas supply mechanism so as to form a plasma at a position facing the substrate to be poled and to apply a poling treatment to the substrate to be poled.

Abstract translation: 一种等离子体极化装置，包括：保持电极（4），其设置在极化室（1）中并保持待极化的基板（2）;相对电极（7），设置在所述极化室中并面向所述基板 被保持在保持电极上，电连接到保持电极和相对电极的一个电极的电源（6），将等离子体形成气体供给到相对电极和保持电极之间的空间中的气体供给机构， 以及控制电源和气体供给机构的控制单元。 控制单元控制电源和气体供给机构，以在面向要极化的基板的位置处形成等离子体，并对待极化的基板进行极化处理。

公开(公告)号：US20130022839A1

公开(公告)日：2013-01-24

申请号：US13522824

申请日：2010-07-23

Applicant: Takeshi Kijima ,  Yuuji Honda

Inventor： Takeshi Kijima ,  Yuuji Honda

IPC: H01L41/187 ,  B32B18/00 ,  H01L41/22

CPC classification number: H01L41/39 ,  C01G23/003 ,  C01G33/006 ,  C23C18/1216 ,  C23C18/1225 ,  C23C18/1254 ,  C23C18/1295 ,  H01L21/02197 ,  H01L21/02282 ,  H01L41/187

Abstract: To provide a PBNZT ferroelectric film capable of preventing sufficiently oxygen ion deficiency. The PBNZT ferroelectric film according to an embodiment of the present invention is a ferroelectric film including a perovskite-structured ferroelectric substance represented by ABO3, wherein the perovskite-structured ferroelectric substance is a PZT-based ferroelectric substance containing Pb2+ as A-site ions and containing Zr4+ and Ti4+ as B-site ions, and the A-site contains Bi3+ as A-site compensation ions and the B-site contains Nb5+ as B-site compensation ions.

Abstract translation: 提供能够防止足够的氧离子缺乏的PBNZT铁电体膜。 根据本发明实施例的PBNZT铁电体膜是由ABO 3表示的钙钛矿结构的铁电体的铁电体膜，其中，钙钛矿结构的铁电体是含有Pb 2+作为A-位离子的PZT系铁电体，含有 Zr4 +和Ti4 +作为B位离子，A位含有Bi3 +作为A位点补偿离子，B位含有Nb5 +作为B位点补偿离子。

公开(公告)号：US08012449B2

公开(公告)日：2011-09-06

申请号：US11821882

申请日：2007-06-26

Applicant: Takeshi Kijima ,  Hidemichi Furihata ,  Setsuya Iwashita ,  Satoshi Kimura ,  Toshihiko Kaneda

Inventor： Takeshi Kijima ,  Hidemichi Furihata ,  Setsuya Iwashita ,  Satoshi Kimura ,  Toshihiko Kaneda

IPC: C01G25/02 ,  C01G23/04 ,  C01G27/02 ,  C01G21/02 ,  C01G31/02 ,  C01G33/00 ,  C01G35/00 ,  C01G41/02 ,  H01L41/18

CPC classification number: C01G1/02 ,  C01G25/006 ,  C01G33/006 ,  C01G35/006 ,  C01P2002/34 ,  C04B35/491 ,  C04B35/493 ,  C04B35/624 ,  C04B35/6264 ,  C04B35/6325 ,  C04B2235/3251 ,  C04B2235/3287 ,  C04B2235/3418 ,  C04B2235/441 ,  C04B2235/449

Abstract: A method of manufacturing a complex metal oxide powder, the method including: preparing a raw material composition for forming a complex metal oxide; mixing an oxidizing solution including an oxidizing substance into the raw material composition to produce complex metal oxide particles to obtain a liquid dispersion of the particles; and separating the particles from the liquid dispersion to obtain a complex metal oxide powder. The complex metal oxide is shown by a general formula AB1−xCxO3, an element A including at least Pb, an element B including at least one of Zr, Ti, V, W, and Hf, and an element C including at least one of Nb and Ta. The raw material composition includes: at least one of a thermally-decomposable organometallic compound including the element A, the element B, or the element C, a hydrolyzable organometallic compound including the element A, the element B, or the element C, and a partial hydrolyzate and/or a polycondensate of the hydrolyzable organometallic compound; at least one of a polycarboxylic acid and a polycarboxylic acid ester; and an organic solvent.

Abstract translation: 一种复合金属氧化物粉末的制造方法，其特征在于，包括：制备复合金属氧化物的原料组合物， 将包含氧化物质的氧化溶液混合到原料组合物中以制备复合金属氧化物颗粒以获得颗粒的液体分散体; 并从分散液中分离颗粒，得到复合金属氧化物粉末。 复合金属氧化物由通式AB1-xCxO3表示，元素A至少包括Pb，元素B包括Zr，Ti，V，W和Hf中的至少一种，元素C包括以下各项中的至少一种： Nb和Ta。 原料组合物包括：包含元素A，元素B或元素C的可热分解的有机金属化合物中的至少一种，包含元素A，元素B或元素C的可水解的有机金属化合物，以及 部分水解产物和/或可水解的有机金属化合物的缩聚物; 多元羧酸和多元羧酸酯中的至少一种; 和有机溶剂。

公开(公告)号：US07966720B2

公开(公告)日：2011-06-28

申请号：US11906550

申请日：2007-10-02

Applicant: Toshihiko Kaneda ,  Satoshi Kimura ,  Hidemichi Furihata ,  Takeshi Kijima

Inventor： Toshihiko Kaneda ,  Satoshi Kimura ,  Hidemichi Furihata ,  Takeshi Kijima

IPC: H05K3/30

CPC classification number: H05K3/107 ,  H05K3/045 ,  H05K3/20 ,  H05K2203/0108 ,  H05K2203/072 ,  Y10T29/49126 ,  Y10T29/49128 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/49156 ,  Y10T29/49165 ,  Y10T428/26

Abstract: A method of manufacturing an element substrate including: forming a release layer on a first support substrate; forming a metal layer having a predetermined pattern on the release layer; applying a sol-gel solution including a material for an inorganic substrate to the first support substrate; removing a solvent from the sol-gel solution by heat treatment to form the inorganic substrate; and removing the metal layer from the first support substrate by decomposing the release layer to transfer the metal layer to the inorganic substrate.

Abstract translation: 一种元件基板的制造方法，包括：在第一支撑基板上形成剥离层; 在剥离层上形成具有预定图案的金属层; 将包含无机基材的材料的溶胶 - 凝胶溶液施加到所述第一支撑基板上; 通过热处理从溶胶 - 凝胶溶液中除去溶剂以形成无机基质; 以及通过分解所述剥离层以将所述金属层转移到所述无机基板，从所述第一支撑基板移除所述金属层。

公开(公告)号：US20100289384A1

公开(公告)日：2010-11-18

申请号：US12662619

申请日：2010-04-26

Applicant: Eiji Natori ,  Takeshi Kijima ,  Koichi Furuyama ,  Yuzo Tasaki

Inventor： Eiji Natori ,  Takeshi Kijima ,  Koichi Furuyama ,  Yuzo Tasaki

IPC: H01L41/187

CPC classification number: C04B35/457 ,  C04B35/01 ,  C04B35/16 ,  C04B35/42 ,  C04B35/4521 ,  C04B35/465 ,  C04B35/472 ,  C04B35/475 ,  C04B35/491 ,  C04B35/493 ,  C04B35/495 ,  C04B35/497 ,  C04B35/624 ,  C04B35/6264 ,  C04B35/62645 ,  C04B35/64 ,  C04B2235/3205 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3224 ,  C04B2235/3227 ,  C04B2235/3232 ,  C04B2235/3244 ,  C04B2235/3251 ,  C04B2235/3256 ,  C04B2235/3258 ,  C04B2235/3287 ,  C04B2235/3296 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/3427 ,  C04B2235/3436 ,  C04B2235/3445 ,  C04B2235/3454 ,  C04B2235/3463 ,  C04B2235/664 ,  C04B2235/76 ,  C04B2235/80 ,  C23C14/08 ,  C23C16/40 ,  C23C16/409 ,  C23C18/1208 ,  C23C18/1225 ,  H01L21/02197 ,  H01L21/02282 ,  H01L21/31691 ,  H01L27/11502 ,  H01L27/11507 ,  H01L41/1878 ,  H01L41/318

Abstract: A method of manufacturing a ceramic includes forming a film which includes a complex oxide material having an oxygen octahedral structure and a paraelectric material having a catalytic effect for the complex oxide material in a mixed state, and performing a heat treatment to the film, wherein the paraelectric material is one of a layered catalytic substance which includes Si in the constituent elements and a layered catalytic substance which includes Si and Ge in the constituent elements. The heat treatment includes sintering and post-annealing. At least the post-annealing is performed in a pressurized atmosphere including at least one of oxygen and ozone. A ceramic is a complex oxide having an oxygen octahedral structure, and has Si and Ge in the oxygen octahedral structure.

Abstract translation: 一种制造陶瓷的方法包括：形成包含具有氧八面体结构的复合氧化物材料和对复合氧化物材料具有催化作用的顺电性材料的混合状态的膜，并对膜进行热处理，其中， 顺电材料是构成元素中包含Si的层状催化物质和构成元素中包含Si和Ge的层状催化物质之一。 热处理包括烧结和后退火。 至少在包括氧和臭氧中的至少一种的加压气氛中进行后退火。 陶瓷是具有氧八面体结构的复合氧化物，并且具有氧八面体结构中的Si和Ge。

公开(公告)号：US20090230821A1

公开(公告)日：2009-09-17

申请号：US12385539

申请日：2009-04-10

Applicant: Eiji Natori ,  Takeshi Kijima ,  Koichi Furuyama ,  Yuzo Tasaki

Inventor： Eiji Natori ,  Takeshi Kijima ,  Koichi Furuyama ,  Yuzo Tasaki

IPC: H01L41/187

CPC classification number: C04B35/457 ,  C04B35/01 ,  C04B35/16 ,  C04B35/42 ,  C04B35/4521 ,  C04B35/465 ,  C04B35/472 ,  C04B35/475 ,  C04B35/491 ,  C04B35/493 ,  C04B35/495 ,  C04B35/497 ,  C04B35/624 ,  C04B35/6264 ,  C04B35/62645 ,  C04B35/64 ,  C04B2235/3205 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3224 ,  C04B2235/3227 ,  C04B2235/3232 ,  C04B2235/3244 ,  C04B2235/3251 ,  C04B2235/3256 ,  C04B2235/3258 ,  C04B2235/3287 ,  C04B2235/3296 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/3427 ,  C04B2235/3436 ,  C04B2235/3445 ,  C04B2235/3454 ,  C04B2235/3463 ,  C04B2235/664 ,  C04B2235/76 ,  C04B2235/80 ,  C23C14/08 ,  C23C16/40 ,  C23C16/409 ,  C23C18/1208 ,  C23C18/1225 ,  H01L21/02197 ,  H01L21/02282 ,  H01L21/31691 ,  H01L27/11502 ,  H01L27/11507 ,  H01L41/1878 ,  H01L41/318

Abstract: A method of manufacturing a ceramic includes forming a film which includes a complex oxide material having an oxygen octahedral structure and a paraelectric material having a catalytic effect for the complex oxide material in a mixed state, and performing a heat treatment to the film, wherein the paraelectric material is one of a layered catalytic substance which includes Si in the constituent elements and a layered catalytic substance which includes Si and Ge in the constituent elements. The heat treatment includes sintering and post-annealing. At least the post-annealing is performed in a pressurized atmosphere including at least one of oxygen and ozone. A ceramic is a complex oxide having an oxygen octahedral structure, and has Si and Ge in the oxygen octahedral structure.

Abstract translation: 一种制造陶瓷的方法包括：形成包含具有氧八面体结构的复合氧化物材料和对复合氧化物材料具有催化作用的顺电性材料的混合状态的膜，并对膜进行热处理，其中， 顺电材料是构成元素中包含Si的层状催化物质和构成元素中包含Si和Ge的层状催化物质之一。 热处理包括烧结和后退火。 至少在包括氧和臭氧中的至少一种的加压气氛中进行后退火。 陶瓷是具有氧八面体结构的复合氧化物，并且具有氧八面体结构中的Si和Ge。

公开(公告)号：US20090153625A1

公开(公告)日：2009-06-18

申请号：US12335637

申请日：2008-12-16

Applicant: Daisuke KOBAYASHI ,  Masao NAKAYAMA ,  Takeshi KIJIMA

Inventor： Daisuke KOBAYASHI ,  Masao NAKAYAMA ,  Takeshi KIJIMA

IPC: B41J2/045 ,  H01L41/00

CPC classification number: H01L41/0533 ,  B41J2/161 ,  B41J2/1625 ,  B41J2/1642 ,  B41J2/1645 ,  B41J2/1646 ,  H01L27/101 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/57 ,  H01L41/23 ,  Y10T29/42

Abstract: A method of manufacturing a capacitor, including: forming a lower electrode on a substrate; forming a dielectric film of a ferroelectric or a piezoelectric on the lower electrode; forming an upper electrode on the dielectric film; and forming a silicon oxide film so that at least the dielectric film is covered with the silicon oxide film, the silicon oxide film being formed by using trimethoxysilane.

Abstract translation: 一种制造电容器的方法，包括：在基板上形成下电极; 在下电极上形成铁电体或压电体的电介质膜; 在所述电介质膜上形成上电极; 并且形成氧化硅膜，使得至少所述电介质膜被所述氧化硅膜覆盖，所述氧化硅膜通过使用三甲氧基硅烷形成。

公开(公告)号：US07524451B2

公开(公告)日：2009-04-28

申请号：US11504255

申请日：2006-08-15

Applicant: Koji Ohashi ,  Setsuya Iwashita ,  Takeshi Kijima ,  Yasuaki Hamada

Inventor： Koji Ohashi ,  Setsuya Iwashita ,  Takeshi Kijima ,  Yasuaki Hamada

IPC: B28B1/00

CPC classification number: C23C14/3414 ,  B41J2/161 ,  B41J2/1646 ,  C23C14/088 ,  H01L21/31691 ,  H01L27/105 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/55 ,  H01L41/0478 ,  H01L41/0973 ,  H01L41/29 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2924/13091 ,  H01L2924/16195 ,  H01L2924/19107 ,  H01L2924/00014 ,  H01L2924/00

Abstract: An insulating target material for obtaining a conductive complex oxide film represented by a general formula ABO3, the insulating target material including an oxide of an element A, an oxide of an element B, and at least one of an Si compound and a Ge compound.

Abstract translation: 一种用于获得由通式ABO3表示的导电复合氧化物膜的绝缘靶材料，包括元素A的氧化物，元素B的氧化物，以及Si化合物和Ge化合物中的至少一种的绝缘靶材料。

公开(公告)号：US20080173471A1

公开(公告)日：2008-07-24

申请号：US12009161

申请日：2008-01-16

Applicant: Toshihiko Kaneda ,  Satoshi Kimura ,  Hidemichi Furihata ,  Jun Amako ,  Daisuke Sawaki ,  Takeshi Kijima

Inventor： Toshihiko Kaneda ,  Satoshi Kimura ,  Hidemichi Furihata ,  Jun Amako ,  Daisuke Sawaki ,  Takeshi Kijima

IPC: H05K1/09 ,  H05K3/02

CPC classification number: H05K3/182 ,  C23C18/1605 ,  C23C18/1692 ,  C23C18/1893 ,  C23C18/2086 ,  C23C18/31 ,  H05K2201/09909 ,  H05K2203/083 ,  H05K2203/1105 ,  H05K2203/308 ,  Y10T29/49156

Abstract: An element substrate including a substrate and a metal layer formed on the substrate by electroless plating and including a linear portion having a width of 10 nm to 100 nm.

Abstract translation: 一种元件基板，包括通过无电镀形成在基板上的基板和金属层，并且包括宽度为10nm至100nm的直线部分。

公开(公告)号：US07371473B2

公开(公告)日：2008-05-13

申请号：US11286286

申请日：2005-11-25

Applicant: Takeshi Kijima ,  Yasuaki Hamada ,  Eiji Natori ,  Koji Ohashi

Inventor： Takeshi Kijima ,  Yasuaki Hamada ,  Eiji Natori ,  Koji Ohashi

IPC: B32B9/00

CPC classification number: C01G33/006 ,  C01G35/006 ,  C01P2002/72 ,  C01P2002/77 ,  C01P2004/04 ,  C01P2004/80 ,  C01P2006/40 ,  C01P2006/80 ,  H01B1/08 ,  H01G4/1254 ,  H01G4/33 ,  H01L21/02197 ,  H01L21/02282 ,  H01L21/316 ,  H01L21/31691 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/57 ,  H01L41/0805 ,  H01L41/1876 ,  H01L41/318

Abstract: A ferroelectric film is formed by an oxide that is described by a general formula AB1-xNbxO3. An A element includes at least Pb, and a B element includes at least one of Zr, Ti, V, W, Hf and Ta. The ferroelectric film includes Nb within the range of: 0.05 ≦x

Abstract translation: 铁氧体膜由通式AB 1-x N x O 3 O 3所描述的氧化物形成。 A元素至少包含Pb，B元素包括Zr，Ti，V，W，Hf和Ta中的至少一种。 铁电体膜包括在0.05 <= x <1的范围内的Nb。 铁电薄膜可用于1T1C，2T2C和简单矩阵类型的铁电存储器。