公开(公告)号：US20160298229A1

公开(公告)日：2016-10-13

申请号：US14681762

申请日：2015-04-08

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Morgan D. Evans ,  Daniel Distaso ,  Stanislav S. Todorov ,  Mark R. Amato ,  William Davis Lee ,  Jillian Reno

IPC: C23C14/48 ,  C23C14/22

CPC classification number: C23C14/48 ,  C23C14/221 ,  H01J37/32385

Abstract: Methods for the selective processing of the outer portion of a workpiece are disclosed. The outer portion is processed by directing an ion beam toward the workpiece, where the ion beam extends beyond the outer edge of the workpiece at two locations. The workpiece is then rotated relative to the ion beam about the center so that all regions of the outer portion are exposed to the ion beam. The workpiece may be rotated an integral number of rotations. The ion beam may perform any process, such as ion implantation, etching or deposition. The outer portion may be an annular ring having an outer diameter equal to that of the workpiece and having a width of 1 to 30 millimeters. The rotation of the workpiece may be aligned with a notch on the outer edge of the workpiece.

Abstract translation: 公开了用于选择性处理工件外部部分的方法。 通过将离子束引向工件来处理外部部分，其中离子束在两个位置处延伸超过工件的外边缘。 然后，工件相对于围绕中心的离子束旋转，使得外部部分的所有区域暴露于离子束。 工件可以旋转一整个转数。 离子束可以执行任何过程，例如离子注入，蚀刻或沉积。 外部可以是具有等于工件的外径的宽度为1至30毫米的环形环。 工件的旋转可以与工件的外边缘上的凹口对准。

公开(公告)号：US20160042927A1

公开(公告)日：2016-02-11

申请号：US14920821

申请日：2015-10-22

Applicant: Lam Research Corporation

Inventor： Keechan Kim ,  Yansung Kim

IPC: H01J37/32 ,  B08B7/00

CPC classification number: H01J37/32862 ,  B08B7/0035 ,  H01J37/32091 ,  H01J37/32385 ,  H01J37/32568 ,  H01J37/32623 ,  H01J2237/334 ,  H01J2237/335

Abstract: Systems and methods for edge exclusion control are described. One of the systems includes a plasma chamber. The plasma processing chamber includes a lower electrode having a surface for supporting a substrate. The lower electrode is coupled with a radio frequency (RF) power supply. The plasma processing chamber further includes an upper electrode disposed over the lower electrode. The upper electrode is electrically grounded. The plasma processing chamber includes an upper dielectric ring surrounding the upper electrode. The upper dielectric ring is moved using a mechanism for setting a vertical position of the upper dielectric ring separate from a position of the upper electrode. The system further includes an upper electrode extension surrounding the upper dielectric ring. The upper electrode extension is electrically grounded. The system also includes a lower electrode extension surrounding the lower dielectric ring. The lower electrode extension is arranged opposite the upper electrode extension.

Abstract translation: 描述了边缘排除控制的系统和方法。 系统中的一个包括等离子体室。 等离子体处理室包括具有用于支撑基板的表面的下电极。 下电极与射频（RF）电源耦合。 等离子体处理室还包括设置在下电极上的上电极。 上电极电接地。 等离子体处理室包括围绕上电极的上介质环。 使用用于将上介电环的垂直位置设置为与上电极的位置分开的机构来移动上介质环。 该系统还包括围绕上部介质环的上部电极延伸部。 上电极延伸部电接地。 该系统还包括围绕下介电环的下电极延伸部。 下电极延伸部布置成与上电极延伸部相对。

公开(公告)号：US20160032441A1

公开(公告)日：2016-02-04

申请号：US14598027

申请日：2015-01-15

Applicant: Samsung Display Co., Ltd.

Inventor： Suhwan Lee ,  Eunho Kim

IPC: C23C4/12 ,  H01J37/32

CPC classification number: C23C4/134 ,  H01J37/32366 ,  H01J37/32385 ,  H01J37/32449 ,  H01J37/32623 ,  H01J37/32743

Abstract: An apparatus for manufacturing a display device and a method of manufacturing a display device is disclosed. In one aspect, the apparatus includes a guider configured to guide a substrate on which a display portion is formed, a plasma sprayer configured to be spaced apart from the display portion and configured to spray plasma onto the substrate and a mask configured to be arranged over the substrate and cover the display portion. The mask includes a body portion configured to face the display portion and a protrusion portion formed at an end of the body portion and configured to extend towards the substrate.

Abstract translation: 公开了一种用于制造显示装置的装置和制造显示装置的方法。 一方面，该装置包括：导向器，被构造成引导其上形成有显示部分的基板;等离子体喷射器，其构造成与显示部分间隔开并且被配置为将等离子体喷射到基板上;以及掩模，被配置为布置在 基板并覆盖显示部分。 掩模包括构造成面向显示部分的主体部分和形成在主体部分的端部并被构造成朝向基板延伸的突出部分。

公开(公告)号：US09184030B2

公开(公告)日：2015-11-10

申请号：US13553734

申请日：2012-07-19

Applicant: Keechan Kim ,  Yansung Kim

Inventor： Keechan Kim ,  Yansung Kim

IPC: B08B3/00 ,  H01J37/32

CPC classification number: H01J37/32862 ,  B08B7/0035 ,  H01J37/32091 ,  H01J37/32385 ,  H01J37/32568 ,  H01J37/32623 ,  H01J2237/334 ,  H01J2237/335

Abstract: Systems and methods for edge exclusion control are described. One of the systems includes a plasma chamber. The plasma processing chamber includes a lower electrode having a surface for supporting a substrate. The lower electrode is coupled with a radio frequency (RF) power supply. The plasma processing chamber further includes an upper electrode disposed over the lower electrode. The upper electrode is electrically grounded. The plasma processing chamber includes an upper dielectric ring surrounding the upper electrode. The upper dielectric ring is moved using a mechanism for setting a vertical position of the upper dielectric ring separate from a position of the upper electrode. The system further includes an upper electrode extension surrounding the upper dielectric ring. The upper electrode extension is electrically grounded. The system also includes a lower electrode extension surrounding the lower dielectric ring. The lower electrode extension is arranged opposite the upper electrode extension.

Abstract translation: 描述了边缘排除控制的系统和方法。 系统中的一个包括等离子体室。 等离子体处理室包括具有用于支撑衬底的表面的下电极。 下电极与射频（RF）电源耦合。 等离子体处理室还包括设置在下电极上的上电极。 上电极电接地。 等离子体处理室包括围绕上电极的上介质环。 使用用于将上介电环的垂直位置设置为与上电极的位置分开的机构来移动上介质环。 该系统还包括围绕上部介质环的上部电极延伸部。 上电极延伸部电接地。 该系统还包括围绕下介电环的下电极延伸部。 下电极延伸部布置成与上电极延伸部相对。

公开(公告)号：US20140338836A1

公开(公告)日：2014-11-20

申请号：US14277295

申请日：2014-05-14

Applicant: Canon Anelva Corporation

Inventor： Hidekazu SUZUKI ,  Masami SHIBAGAKI ,  Atsushi SEKIGUCHI

IPC: H01J37/32

CPC classification number: H01J37/32385 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32577 ,  H01J37/32715 ,  H01J2237/334 ,  H01J2237/3341

Abstract: An etching apparatus includes a chamber capable of being evacuated, a first electrode provided in the chamber and including a tray support portion configured to support a tray which can hold a plurality of substrates and load/unload the substrates into/from the chamber, and a voltage applying unit configured to apply a voltage to the first electrode. A dielectric plate is attached to a portion, of an obverse surface of the first electrode, which faces an outer edge portion of a non-target surface of the substrate.

Abstract translation: 蚀刻装置包括能够被抽真空的腔室，设置在腔室中的第一电极，并且包括托架支撑部分，托盘支撑部分构造成支撑托盘，托盘可以容纳多个基板并将基板装载/从腔室中卸载;以及 电压施加单元，被配置为向所述第一电极施加电压。 电介质板附接到第一电极的正面的面向衬底的非目标表面的外边缘部分的部分。

公开(公告)号：US08323523B2

公开(公告)日：2012-12-04

申请号：US13105674

申请日：2011-05-11

Applicant: Tong Fang ,  Yunsang S. Kim ,  Andreas Fischer

Inventor： Tong Fang ,  Yunsang S. Kim ,  Andreas Fischer

IPC: B44C1/22

CPC classification number: H01L21/02087 ,  H01J37/32366 ,  H01J37/32385 ,  H01L21/02021 ,  H01L21/3065 ,  H01L21/32136 ,  H01L21/32138

Abstract: A method of bevel edge processing a semiconductor in a bevel plasma processing chamber in which the semiconductor substrate is supported on a semiconductor substrate support is provided. The method comprises evacuating the bevel etcher to a pressure of 3 to 100 Torr and maintaining RF voltage under a threshold value; flowing a process gas into the bevel plasma processing chamber; energizing the process gas into a plasma at a periphery of the semiconductor substrate; and bevel processing the semiconductor substrate with the plasma.

Abstract translation: 提供了一种在半导体衬底支撑在半导体衬底支撑件上的斜面等离子体处理室中斜面加工半导体的方法。 该方法包括将斜面蚀刻机抽空至3至100托的压力并将RF电压维持在阈值以下; 将工艺气体流入斜面等离子体处理室; 使所述工艺气体在所述半导体衬底的外围处于等离子体中; 并用等离子体对半导体衬底进行斜面加工。

公开(公告)号：US20080311758A1

公开(公告)日：2008-12-18

申请号：US11818621

申请日：2007-06-14

Applicant: Andrew D. Bailey ,  Yunsang Kim

Inventor： Andrew D. Bailey ,  Yunsang Kim

IPC: H01L21/302 ,  H01L21/306

CPC classification number: H01J37/32385 ,  H01J37/321 ,  H01J37/32366 ,  H01J37/32706 ,  H01L21/02087 ,  H01L21/67069 ,  H01L21/6715

Abstract: Apparatus and methods protect a central process exclusion region of a substrate during processing of an edge environ region of process performance. Removal of undesired materials is only from the edge environ region while the central device region is protected from damage. Field strengths are configured to protect the central region from charged particles from plasma in a process chamber and to foster removal of the undesired materials from only the edge environ region. A magnetic field is configured with a peak value adjacent to a border between the central and edge environ regions. A strong field gradient extends from the peak radially away from the border and away from the central region to repel the charged particles from the central region. The strength and location of the field are adjustable by axial relative movement of magnet sections, and flux plates are configured to redirect the field for desired protection.

Abstract translation: 装置和方法在处理工艺性能的边缘环境区域期间保护衬底的中心过程排除区域。 去除不需要的材料仅来自边缘环境区域，而中央设备区域被保护免受损坏。 场强被配置为保护中心区域免受处理室中的带电粒子等离子体的影响，并且仅促进从边缘环境区域移除不需要的材料。 磁场配置有与中央和边缘环境区域之间的边界相邻的峰值。 强场梯度从径向远离边界并远离中心区域从峰值延伸，以将带电粒子从中心区域排斥。 磁场的强度和位置可以通过磁体部分的轴向相对运动来调节，并且磁通板被配置为重定向磁场以达到期望的保护。

公开(公告)号：US12068152B2

公开(公告)日：2024-08-20

申请号：US17767228

申请日：2020-10-08

Applicant: LAM RESEARCH CORPORATION

Inventor： Saravanapriyan Sriraman

IPC: H01L21/02 ,  H01J37/32

CPC classification number: H01L21/02087 ,  H01J37/32385 ,  H01J37/3244 ,  H01J37/32532 ,  H01L21/02057

Abstract: A system for performing a bevel cleaning process on a substrate includes a substrate support including an electrode and a plurality of plasma needles arranged around a perimeter of the substrate support. The plasma needles are in fluid communication with a gas delivery system and are configured to supply reactive gases from the gas delivery system to a bevel region of the substrate when the substrate is arranged on the substrate support and electrically couple to the electrode of the substrate support and generate plasma around the bevel region of the substrate.

公开(公告)号：US20240186122A1

公开(公告)日：2024-06-06

申请号：US18442594

申请日：2024-02-15

Applicant: Tokyo Electron Limited

Inventor： Jun Yamawaku ,  Chishio Koshimizu

IPC: H01J37/32 ,  B08B9/28 ,  C09K13/00 ,  C23F4/00 ,  H01L21/3065

CPC classification number: H01J37/32642 ,  H01J37/32724 ,  B08B9/286 ,  C09K13/00 ,  C23F4/00 ,  H01J37/32385 ,  H01L21/3065

Abstract: There is provided a focus ring that is capable of preventing deposits from adhering to a member having a lower temperature in a gap between two members having different temperatures. A focus ring 25 is disposed to surround a peripheral portion of a wafer W in a chamber 11 of a substrate processing apparatus 10. The focus ring 25 includes an inner focus ring 25a and an outer focus ring 25b. Here, the inner focus ring 25a is placed adjacent to the wafer W and configured to be cooled; and the outer focus ring 25b is placed so as to surround the inner focus ring 25a and configured not to be cooled. Further, a block member 25c is provided in a gap between the inner focus ring 25a and the outer focus ring 25b.

公开(公告)号：US20240170261A1

公开(公告)日：2024-05-23

申请号：US17991651

申请日：2022-11-21

Applicant: Applied Materials, Inc.

Inventor： Vladimir NAGORNY ,  Rene GEORGE ,  Wei LIU

IPC: H01J37/32

CPC classification number: H01J37/32385 ,  H01J37/32348 ,  H01J37/32568

Abstract: Embodiments of the present disclosure generally relate to a plasma processing apparatus. The plasma processing apparatus includes a processing chamber including a substrate support operable to hold a substrate, a main plasma source coupled with the processing chamber, a plate, a cavity, and an edge plasma generator. The cavity is housed within the plate and spaced radially outward from a dielectric sidewall of the main plasma source.