公开(公告)号：US06636396B1

公开(公告)日：2003-10-21

申请号：US09288008

申请日：1999-04-08

Applicant: Hardayal Singh Gill

Inventor： Hardayal Singh Gill

IPC: G11B539

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3163 ,  G11B5/3903 ,  G11B2005/0008 ,  G11B2005/3996

Abstract: The present invention employs a bottom antiferromagnetic (AFM) layer which can be employed for longitudinally biasing a free layer of a spin valve sensor and in addition pinning the magnetic moment of a pinned layer of the spin valve sensor perpendicular to the ABS. The bottom AFM layer has first and second portions in first and second regions of the read head and a third portion in a sensor region thereof. The magnetic spins of the first and second portions of the bottom AFM layer are directed parallel to and along an air bearing surface of the head while the magnetic spins of the third portion are directed perpendicular to the ABS. This can be accomplished by a unique method wherein after setting magnetic spins of the first and second portions of the AFM layer a current pulse is applied through the spin valve sensor which causes a current pulse field in combination with discrete heating of the spin valve sensor so that the third portion of the AFM layer is set without disturbing the setting of the first and second portions of the bottom AFM layer.

Abstract translation: 本发明采用底部反铁磁（AFM）层，其可用于纵向偏置自旋阀传感器的自由层，并且另外固定自旋阀传感器的被钉扎层的垂直于ABS的磁矩。 底部AFM层在读取头的第一和第二区域中具有第一和第二部分，并且在其传感器区域中具有第三部分。 底部AFM层的第一和第二部分的磁力自旋平行于头部的空气轴承表面并且沿着第三部分的磁自旋垂直于ABS定向。 这可以通过独特的方法来实现，其中在设置AFM层的第一和第二部分的磁自旋之后，通过自旋阀传感器施加电流脉冲，其引起电流脉冲场与自旋阀传感器的离散加热相结合 设置AFM层的第三部分而不干扰底部AFM层的第一和第二部分的设置。

公开(公告)号：US20030156343A1

公开(公告)日：2003-08-21

申请号：US10080448

申请日：2002-02-21

Applicant: International Business Machines Corporation

Inventor： David A. Freitas ,  Kevin R. Vannorsdel

IPC: G11B005/09 ,  G11B005/02

CPC classification number: G11B20/10009 ,  G11B5/012 ,  G11B2005/0008 ,  G11B2005/0016 ,  G11B2005/0018

Abstract: Magneto-Resistive (MR) head read/write channel (400) provides timer (421), detector (433) and amplifier (432) to reduce the amount of time required to transition from read mode to write mode. Controller (410) issues the write command (WGATE) to signal a pending mode change from read to write mode. While read/write channel (400) remains in read mode, timer (421) begins a configurable countdown sequence, which allows Arm Electronics (430), except for a final output stage of amplifier (432), to power up in preparation for write mode. Once timer (421) has reached terminal count, signal (CHWGATE) is de-asserted, which causes write channel (422) to warm up. After warm up, write channel (422) writes serial data (WRITE DATA) to detector (433). Still in read mode, detector (433) detects the presence of WRITE DATA from write channel (422) and asserts signal (AEWGATE). The assertion of signal (AEWGATE) cancels read mode and enables amplifier (432) to source current to MR head (440) in response to WRITE DATA to begin a fully operational write mode.

Abstract translation: 磁阻（MR）磁头读/写通道（400）提供定时器（421），检波器（433）和放大器（432），以减少从读模式转换到写模式所需的时间。 控制器（410）发出写入命令（WGATE），以将未决模式改变从读取模式发送到写入模式。 当读/写通道（400）保持在读模式时，定时器（421）开始可配置的倒计时序列，其允许除了放大器（432）的最终输出级之外的Arm Electronics（430）上电准备写 模式。 一旦定时器（421）达到终端计数，信号（CHWGATE）被取消置位，这使得写入通道（422）预热。 预热后，写通道（422）将串行数据（WRITE DATA）写入检测器（433）。 仍然在读取模式下，检测器（433）从写入通道（422）检测写入数据的存在并且断言信号（AEWGATE）。 信号（AEWGATE）的断言取消读取模式，并且使得放大器（432）能够响应于写入数据来向MR头（440）馈送电流，以开始完全可操作的写入模式。

公开(公告)号：US06594123B1

公开(公告)日：2003-07-15

申请号：US09500122

申请日：2000-02-08

Applicant: Hardayal Singh Gill ,  Mustafa Pinarbasi

Inventor： Hardayal Singh Gill ,  Mustafa Pinarbasi

IPC: G11B539

CPC classification number: B82Y10/00 ,  G11B5/012 ,  G11B5/3903 ,  G11B2005/0008 ,  G11B2005/0018

Abstract: A spin valve sensor of a read head has a platinum manganese (PtMn) pinning layer that pins a magnetic moment of an antiparallel (AP) pinned layer structure. The pinned layer structure has a first AP pinned layer exchange coupled to the pinning layer so that the magnetic moment of the first AP pinned layer is pinned in a first direction and has a second AP pinned layer that has a magnetic moment pinned in a second direction antiparallel to the first direction. A free layer structure of the spin valve sensor is located asymmetrically between first and second shield layers so that when a sense current is conducted through the sensor a net image current field is executed on the free layer structure by the shield layers. For example, if the second AP pinned layer is thicker than the first AP pinned layer HI=HFC+HD+HIM is exerted on the free layer structure where HI is a sense current field from all conductive layers other than the free layer structure, HFC is a negative ferromagnetic coupling field from the second AP pinned layer, HD is a net demagnetization field from the AP pinned layer structure and HIM is a net image current field from the shield layers.

Abstract translation: 读头的自旋阀传感器具有引导反平行（AP）钉扎层结构的磁矩的铂锰（PtMn）钉扎层。 被钉扎层结构具有耦合到钉扎层的第一AP钉扎层交换，使得第一AP钉扎层的磁矩被钉扎在第一方向上，并且具有第二AP钉扎层，其具有在第二方向上被钉住的磁矩 反向平行于第一个方向。 自旋阀传感器的自由层结构不对称地位于第一和第二屏蔽层之间，使得当感测电流通过传感器传导时，屏蔽层在自由层结构上执行净图像电流场。 例如，如果第二AP钉扎层比第一AP钉扎层厚，则HI = HFC + HD + HIM施加在自由层结构上，其中HI是来自除自由层结构之外的所有导电层的感测电流场，HFC 是来自第二AP钉扎层的负铁磁耦合场，HD是来自AP钉扎层结构的净去磁场，HIM是来自屏蔽层的净图像电流场。

公开(公告)号：US06587295B1

公开(公告)日：2003-07-01

申请号：US09694984

申请日：2000-10-25

Applicant: Hiroshi Kiyono ,  Nobutaka Nishio

Inventor： Hiroshi Kiyono ,  Nobutaka Nishio

IPC: G11B509

CPC classification number: G11B5/455 ,  G11B5/012 ,  G11B2005/0008 ,  G11B2005/0013 ,  G11B2005/0018

Abstract: A property improving method includes first and second steps. In the first step popcorn noise in a read signal of a thin-film magnetic head is measured so as to determine whether the popcorn noise falls within a permissible range. In the second step a current is fed to the recording head of the thin-film magnetic head, the current having a value greater than that of the current fed when a normal writing operation is performed. While the value of the current fed to the recording head is gradually increased in the second step, the first and second steps are alternately repeated until it is determined that the popcorn noise falls within a permissible range in the first step, or the current value reaches a specific upper limit.

Abstract translation: 一种物业改进方法包括第一和第二步骤。 在第一步中，测量薄膜磁头的读取信号中的爆米花噪声，以便确定爆米花噪声是否在容许范围内。 在第二步骤中，电流被馈送到薄膜磁头的记录头，当进行正常写入操作时，该电流的值大于馈送的电流值。 虽然在第二步骤中馈送到记录头的电流的值逐渐增加，但是第一和第二步骤交替地重复，直到确定爆米花噪声落在第一步骤的允许范围内，或当前值达到 具体上限。

公开(公告)号：US06583969B1

公开(公告)日：2003-06-24

申请号：US09547960

申请日：2000-04-12

Applicant: Mustafa Pinarbasi

Inventor： Mustafa Pinarbasi

IPC: G11B539

CPC classification number: B82Y10/00 ,  G11B5/3903 ,  G11B5/3967 ,  G11B2005/0008 ,  G11B2005/0016

Abstract: A pinned layer structure includes a nickel iron (NiFe) film which lowers the coercivity HC of the pinned layer structure as well as the coercivity HC of a free layer structure within a spin valve sensor, thereby promoting return of a magnetic moment of the pinned layer structure to its original orientation after being rotated therefrom and promoting a freer rotation of the magnetic moment of the free layer structure in response to signal fields from a rotating magnetic disk. In a preferred embodiment the pinned layer structure is an antiparallel (AP) pinned layer structure which has an antiparallel coupling layer located between first and second AP pinned layers. In a first embodiment the first AP pinned layer is composed of a nickel iron (NiFe) film and a cobalt iron (CoFe) film with the nickel iron (NiFe) film located between a pinning layer and the cobalt iron (CoFe) film, and in a second embodiment the first AP pinned layer includes another cobalt iron (CoFe) film which is located between the pinning layer and the nickel iron (NiFe) film. In the preferred embodiment the pinning layer is composed of platinum manganese (PtMn).

Abstract translation: 钉扎层结构包括镍铁（NiFe）膜，其降低钉扎层结构的矫顽力HC以及自旋阀传感器内的自由层结构的矫顽力HC，从而促进钉扎层的磁矩的返回 结构在其旋转之后成为其原始取向，并响应于来自旋转磁盘的信号场促进自由层结构的磁矩的更自由旋转。 在优选实施例中，钉扎层结构是反平行（AP）钉扎层结构，其具有位于第一和第二AP钉扎层之间的反平行耦合层。 在第一实施例中，第一AP钉扎层由镍铁（NiFe）膜和钴铁（CoFe）膜构成，镍铁（NiFe）膜位于钉扎层和钴铁（CoFe）膜之间，以及 在第二实施例中，第一AP钉扎层包括位于钉扎层和镍铁（NiFe）膜之间的另一钴铁（CoFe）膜。 在优选实施例中，钉扎层由铂锰（PtMn）构成。

公开(公告)号：US20030072111A1

公开(公告)日：2003-04-17

申请号：US10267201

申请日：2002-10-09

Applicant: Alps Electric Co., Ltd.

Inventor： Naoya Hasegawa ,  Eiji Umetsu

IPC: G11B005/39

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B2005/0008 ,  G11B2005/3996

Abstract: A first magnetic layer includes an area which contains an element X (e.g., Cr) and is present in position toward the side of a nonmagnetic intermediate layer from the side near an opposite surface of the first magnetic layer away from an interface between the first magnetic layer and the nonmagnetic intermediate layer, and an area which is partly located in a region from the interface between the first magnetic layer and the nonmagnetic intermediate layer toward the opposite surface of the first magnetic layer and which does not contain the element X. Such an arrangement is able to improve a resistance change rate, to increase a coupling magnetic field based on the RKKY interaction, and to realize satisfactory control of magnetization of a free magnetic layer.

Abstract translation: 第一磁性层包括含有元素X（例如Cr）的区域，并且从靠近第一磁性层的相对表面的一侧离开非磁性中间层侧的第一磁性层 层和非磁性中间层，以及部分位于从第一磁性层和非磁性中间层之间的界面朝向第一磁性层的相反表面并且不包含元件X的区域中的区域。这样的 能够提高电阻变化率，根据RKKY相互作用增加耦合磁场，实现对自由磁性层的磁化的令人满意的控制。

公开(公告)号：US06549382B1

公开(公告)日：2003-04-15

申请号：US09594236

申请日：2000-06-14

Applicant: Hardayal Singh Gill

Inventor： Hardayal Singh Gill

IPC: G11B539

CPC classification number: B82Y10/00 ,  G11B5/3903 ,  G11B5/3954 ,  G11B2005/0008

Abstract: A dual antiparallel (AP) pinned layer spin valve is provided for a read head wherein a sense current field opposes net ferromagnetic and demagnetizing fields from the first and second AP pinned layers on a free layer structure. In one embodiment the first and second AP pinned layers may be asymmetrical on each side of a free layer structure for providing a desired sense current field while in another embodiment one of the pinning layers may be insulative while the other is conductive so that the conductive pinning layer provides the necessary sense current field for counterbalancing the net ferromagnetic coupling and demagnetizing fields.

Abstract translation: 为读头提供双反并联（AP）钉扎层自旋阀，其中感测电流场与自由层结构上的第一和第二AP钉扎层的网络铁磁和去磁场相反。 在一个实施例中，第一和第二AP钉扎层可以在自由层结构的每一侧上是不对称的，以提供期望的感测电流场，而在另一个实施例中，钉扎层之一可以是绝缘的，而另一个是导电的，使得导电钉扎 层提供了必要的感​​测电流场，用于平衡网络铁磁耦合和退磁场。

公开(公告)号：US06455177B1

公开(公告)日：2002-09-24

申请号：US09454085

申请日：1999-12-03

Applicant: Brenda A. Everitt ,  Arthur V. Pohm

Inventor： Brenda A. Everitt ,  Arthur V. Pohm

IPC: B32B900

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3916 ,  G11B5/3941 ,  G11B2005/0008 ,  G11B2005/3996 ,  H01L43/08 ,  Y10T428/1129 ,  Y10T428/12507 ,  Y10T428/12514

Abstract: A stabilized GMR device includes a GMR stack having a first and a second edge. Stabilization means are positioned adjacent to the first and the second edge of the GMR stack for stabilizing the GMR stack. The GMR stack includes a first layer of ferromagnetic material and a second layer of ferromagnetic material. A spacer layer is positioned between the first and the second ferromagnetic layers. A buffer layer is positioned adjacent to the first magnetic layer and a cap layer is positioned adjacent to the second ferromagnetic layer. The stabilization means include a first coupler layer positioned adjacent to the first edge of the GMR stack and a second coupler layer positioned adjacent to the second edge of the GMR stack. The stabilization means also include a first ferromagnetic layer positioned adjacent to the first coupler layer and a second ferromagnetic layer positioned adjacent to the second coupler layer.

Abstract translation: 稳定的GMR装置包括具有第一和第二边缘的GMR堆叠。 稳定装置位于与GMR堆叠的第一和第二边缘相邻以用于稳定GMR堆叠。 GMR堆叠包括第一层铁磁材料层和第二层铁磁材料层。 间隔层位于第一和第二铁磁层之间。 缓冲层定位成与第一磁性层相邻，并且盖层定位成与第二铁磁层相邻。 稳定装置包括邻近GMR堆叠的第一边缘定位的第一耦合器层和邻近GMR堆叠的第二边缘定位的第二耦合器层。 稳定装置还包括邻近第一耦合器层定位的第一铁磁层和邻近第二耦合层定位的第二铁磁层。

公开(公告)号：US20020131203A1

公开(公告)日：2002-09-19

申请号：US09683187

申请日：2001-11-29

Inventor： Dmitri Litvinov ,  Sakhrat Khizroev ,  Billy Wayne Crue

IPC: G11B005/127

CPC classification number: G11B5/1278 ,  G11B5/245 ,  G11B5/465 ,  G11B2005/0008 ,  G11B2005/0029

Abstract: A main write pole for a perpendicular recording head for use with magnetic recording media includes a main body portion of a material with a low magnetic moments, a trailing edge of a material having a high magnetic moment and a non-magnetic de-coupling layer therebetween. The strong magnetic recording field generated by the high moment magnetic material permits the use of a magnetic recording media having high anisotropy, thereby reducing super paramagnetic instabilities at high recording densities. Additionally, the high magnetic moment of the trailing edge, combined with the low magnetic moments of the remainder of the write pole, results in a highly localized magnetic recording field, thereby reducing the sensitivity of the recording process to the skew angle. Further, the de-coupling between the low and high magnetic moment portions of the write pole minimize the problem of magnetic remanence.

Abstract translation: 用于与磁记录介质一起使用的垂直记录头的主写杆包括具有低磁矩的材料的主体部分，具有高磁矩的材料的后缘和其间的非磁性解耦器层 。 由高力矩磁性材料产生的强磁记录磁场允许使用具有高各向异性的磁记录介质，从而在高记录密度下降低超顺磁不稳定性。 此外，后缘的高磁矩与写磁极的其余部分的低磁矩结合导致高度局部化的磁记录场，从而降低记录过程对偏斜角的灵敏度。 此外，写磁极的低磁矩部分和高磁矩部分之间的去耦合最小化了磁剩磁的问题。

公开(公告)号：US20020063984A1

公开(公告)日：2002-05-30

申请号：US10053394

申请日：2001-10-29

Inventor： Brett A. McClellan ,  Zubir Adal

IPC: G11B005/09

CPC classification number: B82Y10/00 ,  G11B5/59616 ,  G11B5/5965 ,  G11B5/59683 ,  G11B19/04 ,  G11B20/10009 ,  G11B27/3027 ,  G11B2005/0008 ,  G11B2005/0016 ,  G11B2220/20

Abstract: A circuit to detect pin layer reversal including an input circuit to receive an input signal having a first portion to indicate a pin layer reversal and having a second portion to indicate a servo sync mark, a first servo sync mark detector for detecting a positive servo sync mark from the input signal, a second servo sync mark detector for detecting a negative servo sync mark from the input signal, and a circuit responsive to the positive servo sync mark and the negative servo sync mark to generate a signal to indicate if the servo sync mark has been reversed and to generate a signal to indicate the pin layer reversal.

Abstract translation: 一种用于检测引脚层反转的电路，包括输入电路以接收具有第一部分的输入信号，以指示引脚层反转并具有指示伺服同步标记的第二部分;第一伺服同步标记检测器，用于检测正伺服同步 从输入信号标记的第二伺服同步标记检测器，用于从输入信号检测负伺服同步标记的第二伺服同步标记检测器，以及响应于正伺服同步标记和负伺服同步标记的电路，以产生信号以指示伺服同步 标记被反转，并产生一个信号以指示针层反转。