公开(公告)号：US09257581B2

公开(公告)日：2016-02-09

申请号：US14291076

申请日：2014-05-30

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： En-Ting Lee ,  Kun-El Chen ,  Yu-Sheng Wang ,  Chien-Chung Chen ,  Huai-Tei Yang

IPC分类号： H01L27/146 ,  H01L31/0352 ,  H01L27/144 ,  H01L21/265

CPC分类号： H01L31/0352 ,  H01L21/26513 ,  H01L27/1446 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14687

摘要： The present disclosure relates to a back-side illuminated CMOS image sensor (BSI CIS). In some embodiments, the BSI CSI has a semiconductor substrate with a front-side and a back-side. A plurality of photodetectors are located within the front-side of the semiconductor substrate. An implantation region is located within the semiconductor substrate at a position separated from the plurality of photodetectors. The implantation region is disposed below the plurality of photodetectors and has a non-uniform doping concentration along a lateral plane parallel to the back-side of the semiconductor substrate. The non-uniform doping concentration allows for the BSI CSI to achieve a small total thickness variation (TTV) between one or more photodetectors and a back-side of a thinned semiconductor substrate that provides for good device performance.

摘要翻译： 本公开涉及背面照明CMOS图像传感器（BSI CIS）。 在一些实施例中，BSI CSI具有前侧和后侧的半导体衬底。 多个光电探测器位于半导体衬底的前侧内。 注入区域位于与多个光电检测器分离的位置内的半导体衬底内。 注入区域设置在多个光电检测器的下方，并且沿着平行于半导体衬底的背面的横向平面具有不均匀的掺杂浓度。 不均匀掺杂浓度允许BSI CSI在一个或多个光电检测器与减薄的半导体衬底的背面之间实现小的总厚度变化（TTV），从而提供良好的器件性能。

公开(公告)号：US20150228537A1

公开(公告)日：2015-08-13

申请号：US14179671

申请日：2014-02-13

申请人： Taiwan Semiconductor Manufacturing CO., LTD.

发明人： Tain-Shang Chang ,  Chia-Han Lai ,  Ren-Hau Yu ,  Ching-Yao Sun ,  Yu-Sheng Wang

IPC分类号： H01L21/768 ,  H01L23/532 ,  H01L21/311 ,  H01L21/3205

CPC分类号： H01L23/53209 ,  H01L21/28518 ,  H01L21/31105 ,  H01L21/31116 ,  H01L21/32053 ,  H01L21/76814 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76879 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a method for manufacturing a semiconductor device, a dielectric layer is formed on a substrate, and a contact hole is formed from the dielectric layer to the substrate. A dielectric spacer liner is formed to cover a sidewall and a bottom of the contact hole. A portion of the dielectric spacer liner is removed to expose a portion of the substrate. A metal silicide layer is formed into the substrate through the contact hole.

摘要翻译： 在半导体器件的制造方法中，在基板上形成电介质层，并且从电介质层向基板形成接触孔。 介电隔离衬垫被形成以覆盖接触孔的侧壁和底部。 去除介电隔离衬垫的一部分以露出衬底的一部分。 通过接触孔将金属硅化物层形成到衬底中。