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    Self-aligned metal compound layers for semiconductor devices
    36.
    发明授权
    Self-aligned metal compound layers for semiconductor devices 有权

    公开(公告)号：US11139397B2

    公开(公告)日：2021-10-05

    申请号：US16572255

    申请日：2019-09-16

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Cheng-Ming Lin ,  Sai-Hooi Yeong ,  Ziwei Fang ,  Chi On Chui ,  Huang-Lin Chao

    IPC: H01L29/78 ,  H01L21/02 ,  H01L29/66

    Abstract: The present disclosure relates to methods for forming a semiconductor device. The method includes forming a substrate and forming first and second spacers on the substrate. The method includes depositing first and second self-assembly (SAM) layers respectively on sidewalls of the first and second spacers and depositing a layer stack on the substrate and between and in contact with the first and second SAM layers. Depositing the layer stack includes depositing a ferroelectric layer and removing the first and second SAM layers. The method further includes depositing a metal compound layer on the ferroelectric layer. Portions of the metal compound layer are deposited between the ferroelectric layer and the first or second spacers. The method also includes depositing a gate electrode on the metal compound layer and between the first and second spacers.

    Fabrication of field effect transistors with ferroelectric materials
    37.
    发明授权
    Fabrication of field effect transistors with ferroelectric materials 有权

    公开(公告)号：US11031490B2

    公开(公告)日：2021-06-08

    申请号：US16454854

    申请日：2019-06-27

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Cheng-Ming Lin ,  Sai-Hooi Yeong ,  Chi On Chui ,  Ziwei Fang ,  Huang-Lin Chao

    IPC: H01L29/66 ,  H01L29/51 ,  H01L21/02

    Abstract: A method of forming a semiconductor device includes forming a sacrificial layer on sidewalls of gate spacers disposed over a semiconductor layer, forming a first hafnium-containing gate dielectric layer over the semiconductor layer in a first trench disposed between the gate spacers, removing the sacrificial layer to form a second trench between the gate spacers and the first hafnium-containing gate dielectric layer, forming a second hafnium-containing gate dielectric layer over the first hafnium-containing gate dielectric layer and on the sidewalls of the gate spacers, annealing the first and the second hafnium-containing gate dielectric layers while simultaneously applying an electric field, and subsequently forming a gate electrode over the annealed first and second hafnium-containing gate dielectric layers.

    Semiconductor device and fabrication method thereof
    39.
    发明授权
    Semiconductor device and fabrication method thereof 有权

    公开(公告)号：US11018232B2

    公开(公告)日：2021-05-25

    申请号：US16875877

    申请日：2020-05-15

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Cheng-Ming Lin ,  Peng-Soon Lim ,  Zi-Wei Fang

    IPC: H01L29/417 ,  H01L21/8234 ,  H01L29/78 ,  H01L21/8238 ,  H01L29/66

    Abstract: A semiconductor device includes a semiconductor substrate, a pair of source/drain regions, and a gate stack. The pair of source/drain regions is on the semiconductor substrate. The gate stack is laterally between the source/drain regions and includes a gate dielectric layer over the semiconductor fin, a metal element-containing layer over the gate dielectric layer, and a fill metal layer over the metal element-containing layer. The metal element-containing layer has a dopant, and a concentration of the dopant in an upper portion of the metal element-containing layer is higher than a concentration of the dopant in a bottom portion of the metal element-containing layer.

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