Abstract:
A method of fabricating an electrostatic member 33 for holding a substrate 45 in a process chamber 80 containing erosive process gas. The method comprises the steps of forming an electrostatic member 33 comprising an insulator or dielectric layer 35 covering an electrically conductive layer, and shaping the electrostatic member 33 to form a dielectric covered electrode and an electrical connector 55 attached to the dielectric covered electrode 50 to conduct charge to the dielectric covered electrode 50.
Abstract:
Methods and apparatus are provided for cleaning a thin disc. In accordance with a first aspect, an apparatus is provided that includes a tank adapted to contain a fluid, and at least one support mechanism adapted to support a thin disc such that the thin disc is at least partially submerged in the fluid. The apparatus further includes a plurality of transducers each adapted to produce energy waves in the fluid, and a controller adapted to adjust the energy waves produced by each transducer so as to scan an energy wave maximum along a surface of a thin disc supported by the at least one support mechanism.
Abstract:
A carrier head for a chemical mechanical polishing apparatus. The carrier head includes a housing, a base, a loading mechanism, a gimbal mechanism, and a substrate backing assembly. The substrate backing assembly includes a support structure positioned below the base, a substantially horizontal, annular flexure connecting the support structure to the base, and a flexible membrane connected to the support structure. The flexible membrane has a mounting surface for a substrate, and extends beneath the base to define a chamber.
Abstract:
An apparatus and method of chemical mechanical polishing (CMP) of a wafer employing a device for determining, in-situ, during the CMP process, an endpoint where the process is to be terminated. This device includes a laser interferometer capable of generating a laser beam directed towards the wafer and detecting light reflected from the wafer, and a window disposed adjacent to a hole formed through a platen. The window provides a pathway for the laser beam during at least part of the time the wafer overlies the window.
Abstract:
An inventive vertical spin-dryer is provided. The inventive spin-dryer may have a shield system positioned to receive fluid displaced from a substrate vertically positioned within the spin-dryer. The shield system may have one or more shields positioned to at least partially reflect fluid therefrom as the fluid impacts the shield. The one or more shields are angled to encourage the flow of fluid therealong, and are preferably hydrophilic to prevent droplets from forming. Preferably the shield system has three shields positioned in a horizontally and vertically staggered manner so that fluid is transferred from a substrate facing surface of a first shield to the top or non-substrate-facing surface of an adjacent shield, etc. A pressure gradient may be applied across the interior of the spin-dryer to create an air flow which encourages fluid to travel along the shield system in a desired direction. A sensor adapted to facilitate desired flywheel position, an openable gripper having a remote actuator, a radiused gripper and a source of inert drying gas are also provided in individual embodiments.
Abstract:
A carrier head for a chemical mechanical polishing apparatus includes a flexible membrane, the lower surface of which provides a substrate-receiving surface. The carrier head may include a projection which contacts an upper surface of the flexible membrane to apply an increased load to a potentially underpolished region of a substrate. Fluid jets may be used for the same purpose.
Abstract:
A gripper assembly is provided which supports a substrate in a vertical orientation. The gripper assembly's end effectors contact only the edge of the substrate. In a first aspect the end effectors each comprise a first pair of opposed surfaces and an second pair of opposed surfaces, all of which simultaneously contact the substrate, holding the substrate in a clamp-type manner. In a second aspect the end effectors each comprise a lower pair of opposed surfaces which simultaneously contact the substrate, and an upper pair of opposed surfaces, larger than the thickness of the substrate, which limit the substrate from horizontal tilting. In the second aspect the end effectors can close at a first elevation where they do not contact the substrate, and can then elevate to gently contact and support the substrate in a pocket-like manner. In a third aspect one of the end effectors has two pairs of opposed surfaces which simultaneously contact the substrate, and the other end effector has two pairs of opposed surfaces which limit the substrate from horizontal tilting. In any aspect no moving parts are required to limit the substrate's vertical and horizontal movement. In a further aspect, fingers to which the end effectors are coupled, are bent so that the gripper is not positioned above the substrate.
Abstract:
An apparatus, as well as a method, brings a surface of a substrate into contact with a polishing pad. A light beam is directed by an optical endpoint detection system to impinge the surface of the substrate. A signal from the optical endpoint detection system is monitored, and if a first endpoint criterion is not detected within a first time window, polishing is stopped at a default polishing time. If the first endpoint criterion is detected within the first time window, the signal is monitored for the second endpoint criterion, and polishing stops if the second endpoint criterion is detected.
Abstract:
A carrier head for a chemical mechanical polishing apparatus includes a flexible membrane, the lower surface of which provides a substrate-receiving surface. The carrier head may include a projection which contacts an upper surface of the flexible membrane to apply an increased load to a potentially underpolished region of a substrate. Fluid jets may be used for the purpose.
Abstract:
A multi-electrode electrostatic chuck (20) for holding a substrate (42) such as a silicon wafer during processing is described. The electrostatic chuck (20) comprises (i) a first electrode (22), (ii) a second electrode (24), and (iii) an insulator (26) having a lower portion (26a), a middle portion (26b) and an upper portion (26c). The lower portion (26a) of the insulator (26) is below the first electrode (22) and has a bottom surface (28) suitable for resting the chuck (20) on a support (44) in a process chamber (41). The middle portion (26b) of the insulator (26) lies between the first and second electrodes (22), (24). The upper portion (26c) of the insulator (26) is on the second electrode (24), and has a top surface (30) suitable for holding a substrate (42). The first and second electrodes (22, 24) can have a unipolar or bipolar configurations. In operation, the chuck (20) is placed on a support (44) in a process chamber (41) so that the bottom surface (28) of the chuck (20) rests on the support (44). A substrate (42) is placed on the top surface (30) of the chuck (20). When the first electrode (22) of the chuck (20) is electrically biased with respect to the support (44), a first electrostatic force holds the chuck (20) onto the support (44). When the second electrode (24) of the chuck (20) is electrically biased with respect to the substrate (42) placed on the chuck (20), a second electrostatic force holds the substrate (42) to the chuck (20).