公开(公告)号：US20160108072A1

公开(公告)日：2016-04-21

申请号：US14891134

申请日：2014-06-26

Applicant: Mamiko INOUE ,  Masaomi SASAKI ,  Tohru YASHIRO ,  Keiichiroh YUTANI ,  Yoshinori OKADA ,  Sukchan KIM ,  Hiroyuki TAKAHASHI ,  Koh FUJIMURA ,  Yoshihisa NAIJO ,  Kazuaki TSUJI ,  Shigenobu HIRANO ,  Toshiya SAGISAKA ,  Satoshi YAMAMOTO ,  Daisuke GOTO ,  Keigo TAKAUJI

Inventor： Mamiko INOUE ,  Masaomi SASAKI ,  Tohru YASHIRO ,  Keiichiroh YUTANI ,  Yoshinori OKADA ,  Sukchan KIM ,  Hiroyuki TAKAHASHI ,  Koh FUJIMURA ,  Yoshihisa NAIJO ,  Kazuaki TSUJI ,  Shigenobu HIRANO ,  Toshiya SAGISAKA ,  Satoshi YAMAMOTO ,  Daisuke GOTO ,  Keigo TAKAUJI

IPC: C07F9/6558 ,  G02F1/155 ,  C09K9/02

CPC classification number: C07F9/65583 ,  C07D401/14 ,  C07F7/1804 ,  C09K9/02 ,  C09K2211/1007 ,  C09K2211/1029 ,  C09K2211/1044 ,  C09K2211/1059 ,  G02F1/15 ,  G02F1/155

Abstract: An electrochromic compound, represented by the following general formula (I); where X1 to X4 are each a substituent represented by the following general formula (II), an alkyl group that may contain a functional group, an aromatic hydrocarbon group that may contain a functional group, or a hydrogen atom, and at least two selected from X1 to X4 are the substituents represented by the general formula (II); where R1 to R8 are each independently a hydrogen atom, or a monovalent group that may contain a substituent; B is a substituted or unsubstituted monovalent group that may contain a functional group; A− is a monovalent anion; and m is any of 0 to 3, and R1 to R8, B, and m may each independently be different when a plurality of the substituents represented by the general formula (II) are present.

Abstract translation: 由以下通式（I）表示的电致变色化合物： 其中X1至X4各自为由以下通式（II）表示的取代基，可以含有官能团的烷基，可含有官能团的芳香族烃基或氢原子，以及选自 X 1〜X 4为通式（II）表示的取代基。 其中R 1至R 8各自独立地为氢原子，或可以含有取代基的一价基团; B是可以含有官能团的取代或未取代的一价基团; A-是一价阴离子; m为0〜3中的任一个，当存在通式（II）所示的多个取代基时，R 1〜R 8，B，m各自独立地不同。

公开(公告)号：US20140326702A1

公开(公告)日：2014-11-06

申请号：US14331957

申请日：2014-07-15

Applicant: Osamu NUKAGA ,  Satoshi YAMAMOTO ,  Kazuhito TABATA ,  Masakazu SUGIYAMA

Inventor： Osamu NUKAGA ,  Satoshi YAMAMOTO ,  Kazuhito TABATA ,  Masakazu SUGIYAMA

IPC: B81C1/00 ,  B23K26/00

CPC classification number: B81C1/00547 ,  B23K26/50 ,  B32B3/266 ,  B81B2201/0214 ,  B81B2201/058 ,  B81B2203/0353 ,  B81C1/00507 ,  B81C2201/013 ,  B81C2201/0143 ,  C03C15/00 ,  C03C23/0025 ,  Y10T428/24273

Abstract: A method of manufacturing a base body having a microscopic hole, includes: forming at least one of a first modified region and a second modified region by scanning inside of a base body with a focal point of a first laser light having a pulse duration on order of picoseconds or less; forming a periodic modified group formed of a plurality of third modified regions and fourth modified regions by scanning an inside of the base body with a focal point of a second laser light having a pulse duration on order of picoseconds or less; obtaining the base body which is formed so that the first modified region and the second modified region overlap or come into contact with the modified group; and forming a microscopic hole by removing the first modified region and the third modified regions by etching.

Abstract translation: 一种制造具有微小孔的基体的方法，包括：通过用具有脉冲持续时间的第一激光的焦点在基体上扫描来形成第一改质区域和第二改质区域中的至少一个 皮秒或更少; 通过用脉冲持续时间为皮秒或更小的第二激光的焦点扫描基体的内部，形成由多个第三改质区域和第四改质区域形成的周期性修饰基团; 获得形成为使得第一改质区域和第二改质区域与改性基团重叠或接触的基体; 并通过蚀刻去除第一改质区和第三改质区而形成微孔。

公开(公告)号：US20140187797A1

公开(公告)日：2014-07-03

申请号：US14172572

申请日：2014-02-04

Applicant: Daisuke GOTO ,  Satoshi YAMAMOTO ,  Toshiya SAGISAKA ,  Takuji KATO ,  Takashi OKADA ,  Masato SHINODA ,  Shinji MATSUMOTO ,  Masataka MOHRI ,  Keiichiro YUTANI

Inventor： Daisuke GOTO ,  Satoshi YAMAMOTO ,  Toshiya SAGISAKA ,  Takuji KATO ,  Takashi OKADA ,  Masato SHINODA ,  Shinji MATSUMOTO ,  Masataka MOHRI ,  Keiichiro YUTANI

IPC: H01L51/00

CPC classification number: H01L51/0052 ,  C07C1/213 ,  C07C15/20 ,  C07C15/24 ,  C07C15/28 ,  C07C15/38 ,  C07C15/56 ,  C07C15/58 ,  C07C15/60 ,  C07C17/093 ,  C07C17/10 ,  C07C17/361 ,  C07C25/22 ,  C07C69/013 ,  C07C69/18 ,  C07C69/63 ,  C07C2602/10 ,  C07C2603/24 ,  C07C2603/44 ,  C07C2603/50 ,  C07C2603/52 ,  C07D321/00 ,  C07D409/14 ,  C07D495/04 ,  C07D495/06 ,  H01L51/0074 ,  H01L51/0558

Abstract: A leaving substituent-containing compound including a partial structure represented by the following General Formula (I): where a pair of X1 and X2 or a pair of Y1 and Y2 each represent a hydrogen atom; the other pair each represent a group selected from the group consisting of a halogen atom and a substituted or unsubstituted acyloxy group having one or more carbon atoms; a pair of the acyloxy groups represented by the pair of X1 and X2 or the pair of Y1 and Y2 may be identical or different, or may be bonded together to form a ring; R1 to R4 each represent a hydrogen atom or a substituent; and Q1 and Q2 each represent a hydrogen atom, a halogen atom or a monovalent organic group, and may be bonded together to form a ring.

公开(公告)号：US20140024841A1

公开(公告)日：2014-01-23

申请号：US14039575

申请日：2013-09-27

Applicant: Toshiya SAGISAKA ,  Satoshi YAMAMOTO ,  Takashi OKADA ,  Masato SHINODA ,  Daisuke GOTO ,  Shinji MATSUMOTO ,  Masataka MOHRI ,  Keiichiro YUTANI ,  Takuji KATO ,  Takanori TANO

Inventor： Toshiya SAGISAKA ,  Satoshi YAMAMOTO ,  Takashi OKADA ,  Masato SHINODA ,  Daisuke GOTO ,  Shinji MATSUMOTO ,  Masataka MOHRI ,  Keiichiro YUTANI ,  Takuji KATO ,  Takanori TANO

IPC: H01L51/00

CPC classification number: H01L51/0068 ,  C07D495/22 ,  C09D11/52 ,  H01L51/001 ,  H01L51/0074 ,  H01L51/0558

Abstract: An ink containing an organic semiconductive material precursor containing a dithienobenzodithiophene derivative of the following formula: X and Y are groups capable of bonding together upon application of an external stimulus to form a compound X-Y that is capable of eliminating from the dithienobenzodithiophene derivative; R1 and R2 are each independently a substituted or unsubstituted alkyl group, or a substituted or unsubstituted aryl group; and R3 to R10 are each independently a hydrogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted alkylthio group, or a substituted or unsubstituted aryl group.

Abstract translation: 包含含有下式的二噻吩并苯并二噻吩衍生物的有机半导体材料前体的油墨：X和Y是在施加外部刺激时能够结合在一起形成能够从二噻吩并苯并噻吩衍生物中除去的化合物X-Y的基团; R 1和R 2各自独立地为取代或未取代的烷基，或取代或未取代的芳基; R 3〜R 10各自独立地为氢原子，取代或未取代的烷基，取代或未取代的烷氧基，取代或未取代的烷硫基，或取代或未取代的芳基。

公开(公告)号：US20130069754A1

公开(公告)日：2013-03-21

申请号：US13611940

申请日：2012-09-12

Applicant: Satoshi YAMAMOTO

Inventor： Satoshi YAMAMOTO

IPC: H01F27/30

CPC classification number: H01F5/00 ,  H01F27/2847 ,  H01F27/303 ,  H01F27/323

Abstract: A laminated coil includes a plurality of circular conductive plates in the form of a flat plate, each of the circular conductive plates being laminated via an insulating material in an axis direction. The plurality of circular conductive plates each include a plurality of concentric circular arc parts having different inner diameter and outer diameter from each other, and a connection part interconnecting the plurality of circular arc parts. The plurality of circular conductive plates are arranged such that the connection parts thereof face each other and the circular arc parts thereof are juxtaposed to each other in a radial direction.

Abstract translation: 层叠线圈包括平板形状的多个圆形导电板，每个圆形导电板通过绝缘材料沿轴向层压。 多个圆形导电板各自包括彼此具有不同内径和外径的多个同心圆弧部分和将多个圆弧部分互连的连接部分。 多个圆形导电板被布置成使得其连接部分彼此面对，并且其圆弧部分在径向方向上彼此并置。

公开(公告)号：US20130022922A1

公开(公告)日：2013-01-24

申请号：US13552273

申请日：2012-07-18

Applicant: Koji ICHIKAWA ,  Yuichi MUKAI ,  Satoshi YAMAMOTO

Inventor： Koji ICHIKAWA ,  Yuichi MUKAI ,  Satoshi YAMAMOTO

IPC: G03F7/027 ,  G03F7/20

CPC classification number: G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/2041

Abstract: A resist composition having a resin having a structural unit represented by the formula (I), a resin being insoluble or poorly soluble in alkali aqueous solution, but becoming soluble in an alkali aqueous solution by the action of an acid and not including the structural unit represented by the formula (I), and an acid generator represented by the formula (II), wherein R1, A1, A13, A14, X12, R23, R24, R25, X21 and Z1+ are defined in the specification.

Abstract translation: 一种抗蚀剂组合物，其具有由式（I）表示的结构单元的树脂，树脂在碱性水溶液中不溶或难溶，但通过酸而不溶于碱性水溶液，不包括结构单元 由式（I）表示的酸衍生物和由式（II）表示的酸产生剂，其中R1，A1，A13，A14，X12，R23，R24，R25，X21和Z1 +在说明书中定义。

公开(公告)号：US20120295066A1

公开(公告)日：2012-11-22

申请号：US13566679

申请日：2012-08-03

Applicant: Osamu NUKAGA ,  Satoshi YAMAMOTO ,  Seiji SAMUKAWA ,  Masakazu SUGIYAMA

Inventor： Osamu NUKAGA ,  Satoshi YAMAMOTO ,  Seiji SAMUKAWA ,  Masakazu SUGIYAMA

IPC: B29C59/16 ,  B32B3/30 ,  B82Y40/00 ,  B82Y30/00

CPC classification number: C03C23/0025 ,  B23K26/0624 ,  B23K26/361 ,  Y10T428/24479

Abstract: A surface nanostructure forming method includes: preparing a substrate having an appropriate processing value; a first process of irradiating a part which is close to a surface of the substrate with laser light having a pulse duration of picosecond order or shorter at an irradiation intensity being close to the appropriate processing value of the substrate, or greater than or equal to the appropriate processing value and less than or equal to an ablation threshold and forming periodic nanostructures in which first modified portions and second modified portions are periodically arranged in a self-assembled manner at a focus at which the laser light is concentrated and in a region being close to the focus; and a second process of performing an etching treatment on the surface of the substrate having the periodic nanostructures formed thereon to form an uneven structure having the first modified portions as valleys.

Abstract translation: 表面纳米结构形成方法包括：制备具有适当处理值的基材; 或者在接近基板的适当处理值的照射强度下用脉冲持续时间为皮秒级或更短的激光照射靠近基板的表面的部分的第一工序，或大于或等于 适当的处理值并小于或等于烧蚀阈值并形成周期性纳米结构，其中第一改性部分和第二修饰部分以激光聚焦的焦点周期性地以自组装的方式布置，并且在紧密的区域中 重点; 以及对其上形成有周期性纳米结构的基板的表面进行蚀刻处理以形成具有第一改性部分作为凹谷的凹凸结构的第二工艺。

公开(公告)号：US20120100482A1

公开(公告)日：2012-04-26

申请号：US13280969

申请日：2011-10-25

Applicant: Tatsuro MASUYAMA ,  Satoshi YAMAMOTO ,  Koji ICHIKAWA

Inventor： Tatsuro MASUYAMA ,  Satoshi YAMAMOTO ,  Koji ICHIKAWA

IPC: G03F7/20 ,  G03F7/027 ,  G03F7/004

CPC classification number: G03F7/2041 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0397

Abstract: A resist composition contains a resin having a structural unit represented by the formula (aa) and a structural unit represented by the formula (ab); and an acid generator, wherein Raa1 represents a hydrogen atom and a methyl group; Aaa1 represents an optionally substituted C1 to C6 alkanediyl group etc.; Raa2 represents an optionally substituted C1 to C18 aliphatic hydrocarbon group; Rab1 represents a hydrogen atom and a methyl group; Aab1 represents a single bond, an optionally substituted C1 to C6 alkanediyl group etc.; W1 represents an optionally substituted C4 to C36 alicyclic hydrocarbon group; n represents 1 or 2; Aab2 in each occurrence independently represents an optionally substituted C1 to C6 aliphatic hydrocarbon group; Rab2 in each occurrence independently represents a C1 to C12 fluorinated alkyl group.

Abstract translation: 抗蚀剂组合物含有具有由式（aa）表示的结构单元的树脂和由式（ab）表示的结构单元; 和酸产生剂，其中Raa1表示氢原子和甲基; Aaa1表示可以具有取代基的C1〜C6烷二基等。 Raa2表示任选取代的C1至C18脂族烃基; Rab1表示氢原子和甲基; Aab1表示单键，任选取代的C 1至C 6烷二基等; W1表示任选取代的C4至C36脂环族烃基; n表示1或2; Aab2各自独立地表示任选取代的C 1至C 6脂族烃基; Rab2各自独立地表示C1〜C12氟化烷基。

公开(公告)号：US20110303993A1

公开(公告)日：2011-12-15

申请号：US13213505

申请日：2011-08-19

Applicant: Satoshi YAMAMOTO

Inventor： Satoshi YAMAMOTO

IPC: H01L29/84 ,  H01L21/50

CPC classification number: G01L1/18 ,  G01P1/023 ,  H01L23/057 ,  H01L23/525 ,  H01L24/02 ,  H01L24/16 ,  H01L2224/0236 ,  H01L2224/02375 ,  H01L2224/02379 ,  H01L2224/0239 ,  H01L2224/0401 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13562 ,  H01L2224/14131 ,  H01L2224/14135 ,  H01L2224/73207 ,  H01L2924/0001 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01076 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00

Abstract: A semiconductor sensor device is provided which is composed of: a semiconductor sensor chip that includes a first substrate, a sensor circuit formed on the first substrate, a first conductive portion electrically connected to the sensor circuit, and a first redistribution layer electrically connected to the first conductive portion; a semiconductor chip that includes a second substrate, a processing circuit, formed on the second substrate, that processes an electrical signal output from the sensor circuit, a second conductive portion electrically connected to the processing circuit, and a second redistribution layer electrically connected to the second conductive portion; and a conductive connection component that electrically connects the first redistribution layer and the second redistribution layer, wherein at least one of the thickness of the first redistribution layer and the thickness of the second redistribution layer is 8 to 20 μm.

Abstract translation: 提供了一种半导体传感器装置，它包括：半导体传感器芯片，包括第一基板，形成在第一基板上的传感器电路，与传感器电路电连接的第一导电部分，以及与第一基板电连接的第一再分配层 第一导电部分; 包括第二基板的半导体芯片，形成在第二基板上的处理电路，处理从传感器电路输出的电信号，电连接到处理电路的第二导电部分和与该处理电路电连接的第二再分布层 第二导电部分; 以及导电连接部件，其电连接所述第一再分布层和所述第二再分布层，其中所述第一再分布层的厚度和所述第二再分布层的厚度中的至少一个为8〜20μm。

公开(公告)号：US20110129999A1

公开(公告)日：2011-06-02

申请号：US13020534

申请日：2011-02-03

Applicant: Osamu NUKAGA ,  Satoshi YAMAMOTO

Inventor： Osamu NUKAGA ,  Satoshi YAMAMOTO

IPC: H01L21/441

CPC classification number: H01L21/76898 ,  H01L21/76831

Abstract: Provided is a method for manufacturing a semiconductor device including: an electrode formation step of forming an electrode on one surface of a semiconductor substrate; a through hole formation step of forming a through hole starting from a position on the other surface corresponding to the position of the electrode; a first insulating layer formation step of forming a first insulating layer on at least an inner circumferential surface, a periphery of an opening, and a bottom surface of the through hole; a modifying step of reforming a first portion of the first insulating layer formed on the bottom surface of the through hole; a modified region removal step of removing the modified region; and a conductive layer formation step of forming a conductive layer on the electrode exposed inside the through hole and on the first insulating layer such that the conductive layer is electrically connected with the electrode.

Abstract translation: 提供一种半导体器件的制造方法，包括：电极形成步骤，在半导体衬底的一个表面上形成电极; 通孔形成步骤，从对应于电极位置的另一表面的位置开始形成通孔; 第一绝缘层形成步骤，在至少内周面，开口周边和通孔的底面上形成第一绝缘层; 改性步骤，对形成在通孔底面上的第一绝缘层的第一部分进行重整; 修改区域去除步骤，去除修饰区域; 以及导电层形成步骤，在暴露在通孔内部的电极和第一绝缘层上形成导电层，使得导电层与电极电连接。