公开(公告)号：US20230327023A1

公开(公告)日：2023-10-12

申请号：US18204550

申请日：2023-06-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungmin KIM

IPC: H01L21/84 ,  H01L27/12 ,  H01L29/06 ,  H01L29/66 ,  H01L29/423 ,  H01L29/78

CPC classification number: H01L29/7856 ,  H01L21/845 ,  H01L27/1211 ,  H01L29/0653 ,  H01L29/42376 ,  H01L29/6653 ,  H01L29/66553 ,  H01L29/6681 ,  H01L29/36

Abstract: A semiconductor device and a method of manufacturing a semiconductor device, the device including a first semiconductor pattern on a substrate, the first semiconductor pattern including a lower channel; a second semiconductor pattern on the first semiconductor pattern and spaced apart from the first semiconductor pattern in a vertical direction, the second semiconductor pattern including an upper channel extending in the vertical direction; a gate electrode covering the lower channel and surrounding the upper channel; and source/drain patterns on opposite sides of the upper channel, wherein the substrate and the first semiconductor pattern have a doping concentration of 1019/cm3 or less.

公开(公告)号：US20230124477A1

公开(公告)日：2023-04-20

申请号：US17887158

申请日：2022-08-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungmin KIM ,  Juhyun LEE

IPC: G02F1/1333 ,  G02F1/1335

Abstract: A display apparatus includes a first film; a second film; a first substrate provided between the first film and the second film, the first substrate including a first protruding member protruding in a first direction from an edge of the first film and an edge of the second film; a second substrate provided between the first film and the second film, the second substrate including a second protruding member protruding in the first direction from an edge of the first substrate; a liquid crystal layer provided between the first substrate and the second substrate; a cover extending from the edge of the first film in the first direction; a photocuring material provided between the cover and the first protruding member of the first substrate, and attaching the cover to the first protruding member; and a blackening material blackened by light provided on at least a portion of a surface of the cover.

公开(公告)号：US20230005960A1

公开(公告)日：2023-01-05

申请号：US17702408

申请日：2022-03-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungmin KIM ,  Yeonsook KIM

IPC: H01L27/12 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786

Abstract: A semiconductor device is provided that includes a base substrate, an insulating film on the base substrate, and an upper substrate on the insulating film. The insulating film includes a crystalline insulating material. A thickness of the insulating film is about 1 nm to about 1,000 nm, and a thickness of the upper substrate is about 1 nm to about 100 nm.

公开(公告)号：US20220406888A1

公开(公告)日：2022-12-22

申请号：US17574074

申请日：2022-01-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Doohyun LEE ,  Heonjong SHIN ,  Seonbae KIM ,  Sungmin KIM ,  Jinyoung PARK ,  Hyunho PARK

IPC: H01L29/06 ,  H01L29/423 ,  H01L29/786

Abstract: A semiconductor device is provided. The semiconductor device includes: an active pattern provided on a substrate having an upper surface; an insulation pattern provided above the substrate and contacting an upper surface of the active pattern; channels spaced apart from each other along a direction perpendicular to the upper surface of the substrate, each of the channels including a material provided in the active pattern; and a gate structure contacting an upper surface of the insulation pattern, an upper surface of the channels, a lower surface of the channels, and sidewalls of the channels opposite to each other. A first distance between an upper surface of the active pattern and a lowermost one of the channels is greater than a second distance between an upper surface of one of the channels and a lower surface of an adjacent channel.

公开(公告)号：US20220310842A1

公开(公告)日：2022-09-29

申请号：US17464102

申请日：2021-09-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sungmin KIM ,  Dongwon KIM

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/36

Abstract: A semiconductor device including an active pattern, which has a base portion and a protrusion portion on the base portion, and a source/drain pattern provided on the base portion may be provided. The protrusion portion may include a first curved pattern portion, a first flat pattern portion disposed at a lower level than the first curved pattern portion, and a second curved pattern portion disposed at a lower level than the first flat pattern portion. Each of the first and second curved pattern portions has a curved side wall, and the first flat pattern portion has a flat side wall. The germanium concentration of the first curved pattern portion is a higher than the germanium concentration of the first flat pattern portion, and the germanium concentration of the first flat pattern portion is higher than the germanium concentration of the second curved pattern portion.

公开(公告)号：US20220223711A1

公开(公告)日：2022-07-14

申请号：US17388584

申请日：2021-07-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sungmin KIM ,  Daewon HA

IPC: H01L29/49 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L21/02 ,  H01L29/66

Abstract: A semiconductor device includes a plurality of active regions on a substrate. A gate electrode is on, and intersects, the active regions. A plurality of source/drain regions are on the active regions, such that the source/drain regions are adjacent to opposite sides of the gate electrode and the gate electrode is between the source/drain regions. A separation structure is between adjacent source/drain regions. The separation structure includes an insulating pattern and a spacer layer. The insulating pattern includes first and second side surfaces that are opposite side surfaces of the insulating pattern and are adjacent to separate, respective source/drain regions. The spacer layer is on the first and second side surfaces. An uppermost end of the insulating pattern is farther from a lower surface of the substrate than a first upper surface of the spacer layer that is adjacent to the first and second side surfaces.

公开(公告)号：US20200013870A1

公开(公告)日：2020-01-09

申请号：US16418705

申请日：2019-05-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seungseok HA ,  Gukil AN ,  Keun Hwi CHO ,  Sungmin KIM

IPC: H01L29/51 ,  H01L29/49 ,  H01L29/423 ,  H01L29/786

Abstract: Semiconductor devices and methods of forming the same are provided. The semiconductor devices may include a substrate, a pair of semiconductor patterns adjacent to each other on the substrate, a gate electrode on the pair of semiconductor patterns, a source/drain pattern connected to the pair of semiconductor patterns, and a ferroelectric pattern on surfaces of the pair of semiconductor patterns. The surfaces of the pair of semiconductor patterns may face each other, and the ferroelectric pattern may define a first space between the pair of semiconductor patterns. The gate electrode may include a work function metal pattern that is in the first space.

公开(公告)号：US20190148216A1

公开(公告)日：2019-05-16

申请号：US16243464

申请日：2019-01-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： HeonJong SHIN ,  Sungmin KIM ,  Byungseo KIM ,  Sunhom Steve PAAK ,  Hyunju BAE

IPC: H01L21/762 ,  H01L29/66 ,  H01L21/324 ,  H01L21/265 ,  H01L29/78 ,  H01L27/088

Abstract: The inventive concepts provide semiconductor devices and methods of manufacturing the same. Semiconductor devices of the inventive concepts may include a fin region comprising a first fin subregion and a second fin subregion separated and isolated from each other by an isolation insulating layer disposed therebetween, a first gate intersecting the first fin subregion, a second gate intersecting the second fin subregion, and a third gate intersecting the isolation insulating layer.

公开(公告)号：US20170047082A1

公开(公告)日：2017-02-16

申请号：US15233523

申请日：2016-08-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min-Hee LEE ,  Sungmin KIM ,  Hangyul KIM ,  Yunjae LEE ,  Taemin CHO

IPC: G10L21/055 ,  G10H1/00 ,  G10L21/043

CPC classification number: G10H1/0008 ,  G10H1/42 ,  G10H2210/076 ,  G10H2220/096 ,  G10H2220/106 ,  G10H2240/325

Abstract: Disclosed is an electronic device, which can acoustically or visually synchronize a plurality of independent beats and output the synchronized beats (or tempos) when executing a music application, including a user interface, a memory, and one or more processors electrically connected to the user interface and the memory, which display tempo progress information of music in response to playing of the music, detect an event while the music is played, synchronize the played music and tempo progress information of music according to the event, and output the synchronized music and tempo progress information.

Abstract translation: 公开了一种电子设备，其可以在执行包括用户接口，存储器和电连接到用户的一个或多个处理器的音乐应用程序时，声学上或视觉上同步多个独立的节拍并输出同步的节拍（或节奏） 接口和存储器，其响应于播放音乐而显示音乐的节奏进度信息，在播放音乐时检测事件，根据事件同步所播放的音乐和音乐进度信息，并输出同步的音乐和 节奏进度信息。

公开(公告)号：US20170046121A1

公开(公告)日：2017-02-16

申请号：US15233305

申请日：2016-08-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min-Hee LEE ,  Sungmin KIM ,  Hangyul KIM ,  Yunjae LEE ,  Hoyoung LEE

IPC: G06F3/16 ,  G06F3/0482 ,  G06F3/0484

CPC classification number: G06F3/165 ,  G06F3/0482 ,  G06F3/04847 ,  G10H1/00 ,  G10H1/0008 ,  G10H1/42 ,  G10H2220/106 ,  G10H2250/641

Abstract: An electronic device and an operating method of the electronic device are provided. The electronic device includes a display for displaying a user interface (UI) including a plurality of cells; and a processor that detects a user input for playing music corresponding to a cell of the plurality of cells, identifies a target cell of the plurality of cells to play, in response to the user input, determines a musical structure of the target cell, and visually outputs music play of the target cell based on the musical structure of the target cell.

Abstract translation: 提供电子设备的电子设备和操作方法。 电子设备包括用于显示包括多个单元的用户界面（UI）的显示器; 以及处理器，其检测用户输入以播放与所述多个单元的单元相对应的音乐，响应于所述用户输入识别所述多​​个单元格中的目标单元进行播放，以确定所述目标单元的音乐结构;以及 基于目标单元的音乐结构目视输出目标单元的音乐播放。