公开(公告)号：US10510984B2

公开(公告)日：2019-12-17

申请号：US14806246

申请日：2015-07-22

Applicant: Samsung Display Co., Ltd.

Inventor： Seung-Ho Jung ,  Chaun-Gi Choi ,  Young-Sik Yoon ,  Joo-Hee Jeon ,  Hye-Young Park

IPC: H01L51/52 ,  H01L51/00 ,  H01L51/56 ,  H01L27/32

Abstract: A transparent organic light emitting display device may include a transparent base substrate, a semiconductor device disposed on the transparent base substrate, a display structure electrically connected to the semiconductor device, and a protection layer including a blue dye disposed on the display structure. The protection layer may improve the transparency of the transparent base substrate by calibrating discoloration of the transparent base substrate. Thus, the transparent display device including the protection layer may ensure an enhanced transparency. Further, the transparent display device may have an enhanced mechanical strength and an increased heat resistance because of the transparent base substrate.

公开(公告)号：US10418431B2

公开(公告)日：2019-09-17

申请号：US15416653

申请日：2017-01-26

Applicant: Samsung Display Co., Ltd.

Inventor： Hye-Hyang Park ,  Joo-Hee Jeon ,  Seung-Ho Jung ,  Chaun-Gi Choi ,  Hyeon-Sik Kim ,  Hui-Won Yang ,  Eun-Young Lee

IPC: H01L27/32 ,  H01L51/00 ,  H01L51/52 ,  H01L29/786 ,  H01L27/12 ,  H01L29/51

Abstract: A display device may include a light emitting element, a buffer layer, a gate insulation layer, and a switching element. A refractive index of the gate insulation layer may be equal to a refractive index of the buffer layer. The switching element may be electrically connected to the light emitting element and may include an active layer and a gate electrode. The active layer may be positioned between the buffer layer and the gate insulation layer and may directly contact at least one of the buffer layer and the gate insulation layer. The gate insulation layer may be positioned between the active layer and the gate electrode and may directly contact at least one of the active layer and the gate electrode.

公开(公告)号：US10005263B2

公开(公告)日：2018-06-26

申请号：US14814059

申请日：2015-07-30

Applicant: Samsung Display Co., Ltd.

Inventor： Seung-Ho Jung ,  Chaun-Gi Choi ,  Hye-Young Park ,  Young-Sik Yoon ,  Joo-Hee Jeon

IPC: B32B27/08 ,  B32B27/28 ,  B32B38/10 ,  B32B37/02 ,  H01L51/52 ,  B32B27/16 ,  H01L51/00 ,  H01L27/32

CPC classification number: B32B27/08 ,  B32B27/16 ,  B32B27/281 ,  B32B37/02 ,  B32B38/10 ,  B32B2255/20 ,  B32B2255/28 ,  B32B2307/412 ,  B32B2307/7246 ,  B32B2310/0843 ,  B32B2457/20 ,  B32B2457/206 ,  H01L27/3244 ,  H01L51/003 ,  H01L51/5237 ,  H01L51/5253

Abstract: A display device may include a first substrate, a lower barrier layer disposed on a rear surface of the first substrate, an upper barrier layer disposed on a front surface of the first substrate, a display structure disposed on the upper barrier layer, and a second substrate disposed on the display structure.

公开(公告)号：US09281322B2

公开(公告)日：2016-03-08

申请号：US14659120

申请日：2015-03-16

Applicant: Samsung Display Co., Ltd.

Inventor： Seung-Ho Jung ,  Young Joo Choi ,  Joon Geol Kim ,  Kang Moon Jo ,  Sho Yeon Kim ,  Byung Hwan Chu ,  Woo Geun Lee ,  Woo-Seok Jeon

IPC: H01L27/12

CPC classification number: H01L27/124 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1259 ,  H01L27/1262 ,  H01L27/1288

Abstract: A thin film transistor array panel is disclosed. The thin film transistor array panel may include a gate line disposed on a substrate and including a gate electrode, a semiconductor layer including an oxide semiconductor disposed on the substrate, a data wiring layer disposed on the substrate and including a data line crossing the gate line, a source electrode connected to the data line and a drain electrode facing the source electrode, a polymer layer covering the source electrode and the drain electrode, and a passivation layer disposed on the polymer layer. The data wiring layer may include copper or a copper alloy and the polymer layer may include fluorocarbon.

公开(公告)号：US09082795B2

公开(公告)日：2015-07-14

申请号：US14477587

申请日：2014-09-04

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Doo Hyoung Lee ,  Chan Woo Yang ,  Seung-Ho Jung ,  Doo Na Kim ,  Bo Sung Kim ,  Eun Hye Park ,  June Whan Choi

IPC: H01L29/786 ,  H01L21/336 ,  H01L29/66 ,  H01B1/06 ,  H01L21/02

CPC classification number: H01L29/66969 ,  H01B1/06 ,  H01L21/02565 ,  H01L21/02628 ,  H01L29/7869

Abstract: A thin film transistor substrate according to an exemplary embodiment of the present invention includes a semiconductor layer including metal disposed on an insulating substrate, a gate electrode overlapping the semiconductor layer, and a source electrode and a drain electrode overlapping the semiconductor layer, wherein the metal in the semiconductor layer comprises indium (In), zinc (Zn), and tin (Sn), and a molar ratio ( R , R ⁡ [ mol ⁢ ⁢ % ] = [ In ] [ In + Zn + Sn ] × 100 ) of indium (In) to the metals in the semiconductor layer is less than about 20%, and more specifically, the molar ratio ( R , R ⁡ [ mol ⁢ ⁢ % ] = [ In ] [ In + Zn + Sn ] × 100 ) of indium (In) of the metals in the semiconductor layer is about 5% to about 13%.

Abstract translation: 根据本发明的示例性实施例的薄膜晶体管基板包括：半导体层，包括设置在绝缘基板上的金属，与半导体层重叠的栅极电极以及与半导体层重叠的源电极和漏电极，其中金属 在半导体层中包含铟（In），锌（Zn）和锡（Sn），摩尔比（R，R⁡[mol⁢％] = [In] [In + Zn + Sn]×100） 对于半导体层中的金属，铟（In）的含量小于约20％，更具体地说，摩尔比（R，R⁡[mol·⁢％] = [In] [In + Zn + Sn]×100 ）的半导体层中的金属的In（In）为约5％至约13％。