Display device and manufacturing method thereof

    公开(公告)号:US10672799B2

    公开(公告)日:2020-06-02

    申请号:US15465154

    申请日:2017-03-21

    Abstract: A display device may include a substrate, an active pattern layer, a gate insulating layer, a first metal pattern layer, an interlayer insulating layer, a second metal pattern layer, and a passivation film. The active pattern layer may be disposed on the substrate. The gate insulating layer may be disposed on the active pattern layer. The first metal pattern layer may be disposed on the gate insulating layer. The interlayer insulating layer may be disposed on the first metal pattern layer. The second metal pattern layer may be disposed on the interlayer insulating layer. The passivation film may be disposed on the side wall of the second metal pattern layer.

    ORGANIC LIGHT-EMITTING DIODE DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME

    公开(公告)号:US20200043998A1

    公开(公告)日:2020-02-06

    申请号:US16374706

    申请日:2019-04-03

    Abstract: An organic light-emitting diode display device includes a pixel electrode, a pixel-defining layer, an organic emission layer, and a counter electrode. The pixel-defining layer includes an opening partially exposing the pixel electrode. The organic emission layer is disposed on the pixel electrode. The organic emission layer is disposed in the opening. The counter electrode is disposed on the organic emission layer. The counter electrode opposes the pixel electrode. The pixel-defining layer includes a first pixel-defining layer and a second pixel-defining layer. The first pixel-defining layer is disposed on the pixel electrode and includes an inorganic material. The second pixel-defining layer is disposed on the first pixel-defining layer and includes an organic material. A sidewall of the first pixel-defining layer that is closest to the opening is aligned with a sidewall of the second pixel-defining layer that is closest to the opening.

    Method of fabricating display device
    36.
    发明授权
    Method of fabricating display device 有权
    制造显示装置的方法

    公开(公告)号:US09466623B2

    公开(公告)日:2016-10-11

    申请号:US14081033

    申请日:2013-11-15

    Abstract: A method of fabricating a display device includes forming a thin-film transistor including a gate electrode, a source electrode and a drain electrode on a substrate, forming a first insulating layer and a second insulating layer on the thin-film transistor, forming a common electrode on the second insulating layer by depositing a common electrode material on the second insulating layer, plasma-treating a photoresist pattern on the common electrode material, and etching the common electrode material using the plasma-treated photoresist pattern as a mask, defining a contact hole in the second insulating layer which corresponds to the drain electrode using the plasma-treated photoresist pattern and the common electrode as a mask, forming a third insulating layer on the second insulating layer and the common electrode to expose the contact hole and the drain electrode and forming a pixel electrode connected to the drain electrode on the third insulating layer.

    Abstract translation: 制造显示装置的方法包括在衬底上形成包括栅电极,源电极和漏电极的薄膜晶体管,在薄膜晶体管上形成第一绝缘层和第二绝缘层,形成共同的 通过在第二绝缘层上沉积公共电极材料,等离子体处理公共电极材料上的光致抗蚀剂图案,以及使用等离子体处理的光致抗蚀剂图案作为掩模蚀刻公共电极材料,限定接触 使用等离子体处理的光致抗蚀剂图案和公共电极作为掩模对应于漏电极的第二绝缘层中的孔,在第二绝缘层和公共电极上形成第三绝缘层,以暴露接触孔和漏电极 以及在所述第三绝缘层上形成连接到所述漏电极的像素电极。

    Thin film transistor array panel and method of manufacturing the same
    37.
    发明授权
    Thin film transistor array panel and method of manufacturing the same 有权
    薄膜晶体管阵列面板及其制造方法

    公开(公告)号:US09076691B2

    公开(公告)日:2015-07-07

    申请号:US13875722

    申请日:2013-05-02

    CPC classification number: H01L27/124 H01L27/1248 H01L27/322 H01L27/3248

    Abstract: A method of manufacturing a thin film transistor array panel includes: a gate insulating layer disposed on a gate electrode, a semiconductor disposed on the gate insulating layer, a source electrode opposite a drain electrode disposed on the semiconductor, a color filter disposed on the gate insulating layer, an overcoat disposed on the color filter and including an inorganic material. A first dry etching is performed using the photosensitive film pattern as a mask to etch the overcoat and provide a preliminary contact hole, through which a portion of the color filter is exposed. A second dry etching is performed using the overcoat as a mask to etch the color filter through the preliminary contact hole and to provide a contact hole, through which a portion of the drain electrode is exposed. A pixel electrode is connected to the drain electrode through the contact hole, on the overcoat.

    Abstract translation: 制造薄膜晶体管阵列面板的方法包括:设置在栅电极上的栅极绝缘层,设置在栅极绝缘层上的半导体,设置在半导体上的漏电极相对的源电极,设置在栅极上的滤色器 绝缘层,设置在滤色器上并包括无机材料的外涂层。 使用感光膜图案作为掩模进行第一干蚀刻,以蚀刻外涂层并提供初步接触孔,滤色片的一部分穿过该预接触孔。 使用外涂层作为掩模进行第二干蚀刻,以通过预接触孔蚀刻滤色器,并提供接触孔,漏电极的一部分暴露在该接触孔中。 像素电极通过外罩上的接触孔连接到漏电极。

    THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF
    38.
    发明申请
    THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF 有权
    薄膜晶体管阵列及其制造方法

    公开(公告)号:US20150072484A1

    公开(公告)日:2015-03-12

    申请号:US14487300

    申请日:2014-09-16

    Abstract: A thin film transistor array panel includes a substrate, gate lines, each including a gate pad, a gate insulating layer, data lines, each including a data pad connected to a source and drain electrode, a first passivation layer disposed on the data lines and the drain electrode, a first electric field generating electrode, a second passivation layer disposed on the first electric field generating electrode, and a second electric field generating electrode. The gate insulating layer and the first and second passivation layers include a first contact hole exposing a part of the gate pad, the first and second passivation layers include a second contact hole exposing a part of the data pad, and at least one of the first and second contact holes have a positive taper structure having a wider area at an upper side than at a lower side.

    Abstract translation: 薄膜晶体管阵列面板包括基板,栅极线,每个栅极线包括栅极焊盘,栅极绝缘层,数据线,每条数据线包括连接到源极和漏极的数据焊盘,设置在数据线上的第一钝化层和 漏电极,第一电场产生电极,设置在第一电场产生电极上的第二钝化层和第二电场产生电极。 栅极绝缘层和第一和第二钝化层包括暴露栅极焊盘的一部分的第一接触孔,第一和第二钝化层包括暴露数据焊盘的一部分的第二接触孔,以及第一和第二钝化层中的至少一个 并且第二接触孔具有在上侧具有比在下侧更宽的面积的正锥形结构。

    Methods of manufacturing thin-film transistor array substrate and liquid crystal display
    39.
    发明授权
    Methods of manufacturing thin-film transistor array substrate and liquid crystal display 有权
    制造薄膜晶体管阵列基板和液晶显示器的方法

    公开(公告)号:US08940565B1

    公开(公告)日:2015-01-27

    申请号:US14194015

    申请日:2014-02-28

    CPC classification number: H01L27/1259 G02F2001/134372

    Abstract: A method of manufacturing a thin film transistor array substrate includes providing a plurality of gate lines and a plurality of data lines on a first substrate, providing an organic layer on the gate lines and the data lines, providing a first electrode on the organic layer, providing a passivation layer on the first electrode, providing a second electrode on the passivation layer, providing a first cover layer on the second electrode to cover the second electrode, providing a plurality of photosensitive layer patterns on the first cover layer, providing a plurality of first cutout patterns in the first cover layer and a plurality of second cutout patterns in the second electrode using the photosensitive layer patterns as an etch mask, and providing a plurality of third cutout patterns in the passivation layer using the first cover layer as an etch mask.

    Abstract translation: 制造薄膜晶体管阵列基板的方法包括:在第一基板上设置多个栅极线和多个数据线,在栅极线和数据线上提供有机层,在有机层上提供第一电极, 在所述第一电极上提供钝化层,在所述钝化层上提供第二电极,在所述第二电极上提供第一覆盖层以覆盖所述第二电极,在所述第一覆盖层上提供多个感光层图案,提供多个 第一覆盖层中的第一切除图案和使用感光层图案作为蚀刻掩模的第二电极中的多个第二切割图案,并且使用第一覆盖层作为蚀刻掩模在钝化层中提供多个第三切除图案 。

    Thin film transistor array panel and method of manufacturing the same
    40.
    发明授权
    Thin film transistor array panel and method of manufacturing the same 有权
    薄膜晶体管阵列面板及其制造方法

    公开(公告)号:US08921852B2

    公开(公告)日:2014-12-30

    申请号:US13915342

    申请日:2013-06-11

    Abstract: A thin film transistor array panel includes: a substrate, a gate line positioned on the substrate and including a gate electrode, a semiconductor layer positioned on the substrate and including an oxide semiconductor, a data wire layer positioned on the substrate and including a data line crossing the gate line, a source electrode connected to the data line, and a drain electrode facing the source electrode, and a capping layer covering the data wire layer, in which an end of the capping layer is inwardly recessed as compared to an end of the data wire layer.

    Abstract translation: 薄膜晶体管阵列面板包括:衬底,位于衬底上并包括栅电极的栅极线,位于衬底上并包括氧化物半导体的半导体层,位于衬底上的数据线层,包括数据线 与栅极线交叉,连接到数据线的源电极和面对源电极的漏电极和覆盖数据线层的覆盖层,其中封盖层的端部向内凹入,与顶端 数据线层。

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